• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.474-477
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• 1996

The solid state cesium ion beam sputter deposition system has been developed for negative carbon ion beam deposition. The negative carbon ion beams are effectively produced by cesium ion bombardment. The C-ion beam current and deposition energy can be independently controlled for the deposition of a-D films. This system is very compact, reliable and high flux without any gas discharge or plasma and has been successfully used in the studies of the ion beam deposited amorphous diamond(a-D)

• Transactions of the Korean Society of Mechanical Engineers A
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• v.31 no.1 s.256
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• pp.139-144
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• 2007

This paper presents development of carbon nanotube (CNT) tip modified by focused ion beam (FIB) and experimental results in non-contact mode of atomic force microscopy (AFM) using fabricated tip. We used an electric field which causes dielectrophoresis, to align and deposit CNTs on a conventional silicon tip. The morphology of the fabricated CNT tip was then modified into a desired shape using focused ion beam. We measured anodic aluminum oxide sample and trench structure to estimate the performance of FIB-modified tip and compared with those of conventional Si tip. We demonstrate that FIB modified tip in non contact mode had superior characteristics than conventional tip in the respects of wear, image resolution and sidewall measurement.

• Polymer(Korea)
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• v.26 no.6
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• pp.718-727
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• 2002

In this work, an Ar+ beam was irradiated on carbon fiber surfaces to improve the interfacial shear strength (IFSS) of the resulting composites using an ion assisted reaction (IAR) method h single fiber pull-out test was executed to investigate the basic characteristics of the single Carbon fiber/matrix interface. Based on Greszczuk's geometrical model, the debonding force for pull-out of the fiber from the resins was discussed with the applied ion beam energy as a result, it was known that an ion beam treatment produced the functional groups on fiber surface and etching lines along the fiber axis direction, resulting in increasing the adhesion forces between fibers and matrix, which caused the improvement of the IFSS in a composite system. And, it was also found that the maximum IFSS was shown at 0.8 keV ion beam energy in this system.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.73-73
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• 1999

A large area negative metal ion beam source is developed. Kinetic ion beam of the incident metal ions yields a whole nucleation and growth phenomena compared to the conventional thin film deposition processes. At the initial deposition step one can engineer the surface and interface by tuning the energy of the incident metal ion beams. Smoothness and shallow implantation can be tailored according to the desired application process. Surface chemistry and nucleation process is also controlled by the energy of the direct metal ion beams. Each individual metal ion beams with specific energy undergoes super-thermodynamic reactions and nucleation. degree of formation of tetrahedral Sp3 carbon films and beta-carbon nitride directly depends on the energy of the ion beams. Grain size and formation of polycrystalline Si, at temperatures lower than 500deg. C is obtained and controlled by the energy of the incident Si-ion beams. The large area metal ion source combines the advantages of those magnetron sputter and SKIONs prior cesium activated metal ion source. The ion beam source produces uniform amorphous diamond films over 6 diameter. The films are now investigated for applications such as field emission display emitter materials, protective coatings for computer hard disk and head, and other protective optical coatings. The performance of the ion beam source and recent applications will be presented.

• Proceedings of the Korean Vacuum Society Conference
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• 1997.07a
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• pp.36-36
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• 1997

• Journal of Radiation Protection and Research
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• v.48 no.4
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• pp.204-212
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• 2023

Background: Isotopes of the projectile may be produced along the beam path during the irradiation of a target by a heavy ion due to inelastic interactions with the media. This study analyzed the production cross-section of carbon (C) and Helium (He) projectile's isotopes resulting from the interactions of these beams with different materials along the beam path. Materials and Methods: In this study, we transport C and He ion beams through different materials. This transportation was made by the Monte Carlo simulation. Particle and Heavy Ion Transport code System (PHITS) has been used for this calculation. Results and Discussion: It has been found that ¹⁰C, ¹¹C, and ¹³C from the ¹²C ion beam and ³He from the ⁴He ion beam are significant projectile's isotopes that have higher flux than other isotopes of these projectiles. The ⁴He ion beam has a higher projectile's isotope production cross-section along the beam path, which adds more impurities to the beam than the ¹²C ion beam. These projectile's isotopes from both the ¹²C and ⁴He ion beams have higher production cross-sections in hydrogenous materials like water or polyethylene. Conclusion: It is important to distinguish these projectile's isotopes from the primary beam particles to obtain a precise and accurate cross-section result by minimizing the error during measurement with a nuclear track detector. This study will show the trend of the production probability of projectile's isotopes for these ion beams.

• The Korean Journal of Ceramics
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• v.3 no.3
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• pp.173-176
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• 1997

Direct metal ion beam deposition is considered to be a whole new thin film deposition technique. Unlike other conventional thin film deposition processes, the individual deposition particles carry its own ion beam energies which are directly coupled for the formation of this films. Due to the nature of ion beams, the energies can be controlled precisely and eventually can be tuned for optimizing the process. SKION's negative C- ion beam source is used to investigate the initial nucleation mechanism and growth. Strong C- ion beam energy dependence has been observed. Complete phase control of sp3 and sp3, control of the C/SiC/Si interface layer, control of crystalline and amorphous mode growth, and optimization of the physical properties for corresponding applications can be achieved.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.5-18
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• 1996

The solid state cesium ion source os alumino-silicate based zeolite which contains cerium. The material is an ionic conductor. Cesiums are stably stored in the material and one can extract the cesiums by applying electric field across the electrolyte. Cesium ion bombardment has the unique property of producing high negative ion yield. This ion source is used as the primary source for the production of a negative ion without any gas discharge or the need for a carrier gas. The deposition of materials as an ionic species in the energy range of 1.0 to 300eV is recently recognized as a very promising new thin film technique. This energetic non-thermal equilibrium deposition process produces films by “Kinetic Bonding / Energetic Condensation" mechansim not governed by the common place thermo-mechanical reaction. Under these highly non-equilibrium conditions meta-stable materials are realized and the negative ion is considered to be an optimum paeticle or tool for the purpose. This process differs fundamentally from the conventional ion beam assisted deposition (IBAD) technique such that the ion beam energy transfer to the deposition process is directly coupled the process. Since cesium ion beam sputter deposition process is forming materials with high kinetic energy of metal ion beams, the process provider following unique advantages:(1) to synthesize non thermal-equilibrium materials, (2) to form materials at lower processing temperature than used for conventional chemical of physical vapor deposition, (3) to deposit very uniform, dense, and good adhesive films (4) to make higher doposition rate, (5) to control the ion flux and ion energy independently. Solid state cesium ion beam sputter deposition system has been developed. This source is capable of producing variety of metal ion beams such as C, Si, W, Ta, Mo, Al, Au, Ag, Cr etc. Using this deposition system, several researches have been performed. (1) To produce superior quality amorphous diamond films (2) to produce carbon nitirde hard coatings(Carbon nitride is a new material whose hardness is comparable to the diamond and also has a very high thermal stability.) (3) to produce cesiated amorphous diamond thin film coated Si surface exhibiting negative electron affinity characteristics. In this presentation, the principles of solid state cesium ion beam sputter deposition and several applications of negative metal ion source will be introduced.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05d
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• pp.57-60
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• 2003

Electro-Optical (EO) performances for the ion beam (IB) aligned twisted-nematic (TN)-liquid crystal display (LCD) with ion beam exposure on the new of diamond like carbon (DLC) thin film surface were investigated. Voltage-transmittance (V-T) curve and response time without backflow bounce in the ion beam aligned TN-LCD with ion beam exposure for 0.5 and 1min on the DLC thin film was observed. Also. the fast response time of ion beam aligned TN-LCD with ion beam exposure for 1min on the DLC thin film surface can be achieved. The residual DC voltage of the ion beam aligned TN-LCD on the DLC thin film surface was almost the same as that of the rubbing aligned TN-LCD on the polyimide(PI) surface.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.497-499
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• 2003

Electro-optical (EO) performances of the ion beam aligned twisted nematic (TN)-liquid crystal display (LCD) with oblique ion beam exposure on the DLC thin film surface were studied. An excellent voltage-transmittance (VT) curve of the ion beam aligned TN-LCD was observed with oblique ion beam exposure on the DLC thin film surface for 1 min. Also, a faster response time for the ion beam aligned TN-LCD can be achieved with oblique ion beam exposure on the DLC thin film surface for 1 min can be achieved.