• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2005.10a
• /
• pp.167-170
• /
• 2005

The two-dimensional (2D) and three-dimensional (3D) diamond-like carbon (DLC) stamps for ultraviolet nanoimprint lithography (UV-NIL) were fabricated using two kinds of methods, which were a DLC coating process followed by the focused ion beam (FIB) lithography and the two-photon polymerization (TPP) patterning followed by nano-scale thick DLC coating. We fabricated 70 nm deep lines with a width of 100 nm and 70 nm deep lines with a width of 150 nm on 100 nm thick DLC layers coated on quartz substrates using the FIB lithography. 200 nm wide lines, 3D rings with a diameter of $1.35\;{\mu}m$ and a height of $1.97\;{\mu}m$, and a 3D cone with a bottom diameter of $2.88\;{\mu}m$ and a height of $1.97\;{\mu}m$ were successfully fabricated using the TPP patterning and DLC coating process. The wafers were successfully printed on an UV-NIL using the DLC stamp. We could see the excellent correlation between the dimensions of features of stamp and the corresponding imprinted features.

• Korean Journal of Materials Research
• /
• v.20 no.12
• /
• pp.645-648
• /
• 2010

The structure and morphology of epitaxial layer defects in epitaxial Si wafers produced by the Czochralski method were studied using focused ion beam (FIB) milling, scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Epitaxial growth was carried out in a horizontal reactor at atmospheric pressure. The p-type Si wafers were loaded into the reactor at about $800^{\circ}C$ and heated to about $1150^{\circ}C$ in $H_2$. An epitaxial layer with a thickness of $4{\mu}m$ was grown at a temperature of 1080-$1100^{\circ}C$. Octahedral void defects, the inner walls of which were covered with a 2-4 nm-thick oxide, were surrounded mainly by $\{111\}$ planes. The formation of octahedral void defects was closely related to the agglomeration of vacancies during the growth process. Cross-sectional TEM observation suggests that the carbon impurities might possibly be related to the formation of oxide defects, considering that some kinds of carbon impurities remain on the Si surface during oxidation. In addition, carbon and oxygen impurities might play a crucial role in the formation of void defects during growth of the epitaxial layer.

• Journal of Sensor Science and Technology
• /
• v.16 no.5
• /
• pp.377-383
• /
• 2007

We describe the fabrication and characterization of a doubly clamped multi-walled carbon nanotube (MWNT). The device was assembled by an application of electric field in solution. The MWNT was clamped on end of metal trench electrodes in solution and deposited with additional platinum (Pt) on edge of electrode for firmly suspending the MWNT by focused ion beam (FIB). The MWNTs range of diameter and length were 100 to 150 nm and 1.5 to $2{\mu}m$, respectively. Electrical characteristics of fabricated devices were measured by I-V curve and impedance analysis. The mechanical deformation was observed by resistivity in high air pressure. Resonant frequency around 6.8 MHz was detected and resistivity was linearly varied according to the magnitude of air pressure. This device could have potential applications in nanoelectronics and various sensors.

• Journal of Information Display
• /
• v.6 no.4
• /
• pp.45-48
• /
• 2005

By applying a critical field treatment instead of the conventional surface treatments such as soft rubber roller, ion beam irradiation, adhesive taping, and laser irradiation, electron emission properties of screen-printed carbon nanotubes (CNTs) were enhanced and investigated based on the emission current-voltage characteristics through scanning electron microscopy. After nanotube emitters were activated at the applied electric-field of 2.5 V/um, the electron emission current density with good uniform emission sites reached the value of 2.13 mA/$cm^2$ , which is 400 times higher than that of the untreated sample, and the turn-on voltage decreased markedly from 700 to 460 V. In addition, enhancement of the alignment of CNTs to the vertical direction was observed.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.335-335
• /
• 2011

Instability of a thin film attached to a compliant substrate often leads to emergence of exquisite wrinkle patterns with length scales that depend on the system geometry and applied stresses. However, the patterns that are created using the current techniques in polymer surface engineering, generally have low aspect ratio of undulation amplitude to wavelength, thus, limiting their application. Here, we present a novel and effective method that enables us to create wrinkles with a desired wavelength and high aspect ratio of amplitude over wavelength as large as to 2.5:1. First, we create buckle patterns with high aspect ratio of amplitude to wavelength by deposition of an amorphous carbon film on a surface of a soft polymer poly(dimethylsiloxane) (PDMS). Amorphous carbon films are used as a protective layer in structural systems and biomedical components, due to their low friction coefficient, strong wear resistance against, and high elastic modulus and hardness. The deposited carbon layer is generally under high residual compressive stresses (~1 GPa), making it susceptible to buckle delamination on a hard substrate (e.g. silicon or glass) and to wrinkle on a flexible or soft substrate. Then, we employ glancing angle deposition (GLAD) for deposition of a high aspect ratio patterns with amorphous carbon coating on a PDMS surface. Using this method, pattern amplitudes of several nm to submicron size can be achieved by varying the carbon deposition time, allowing us to harness patterned polymers substrates for variety of application. Specifically, we demonstrate a potential application of the high aspect wrinkles for changing the surface structures with low surface energy materials of amorphous carbon coatings, increasing the water wettability.

• Journal of the Korean Vacuum Society
• /
• v.12 no.S1
• /
• pp.1-6
• /
• 2003

SiC-C films were deposited with r. f. magnetron sputtering on substrates followed by argon ion bombardment. These films were then permeated by hydrogen gas under the pressure of $3.23\times10^{7}$ Pa for 3 hours at temperature of 500K or bombarded with hydrogen ion beam at 5 keV and a dose of $1\times10^{18}$ ions/$\textrm{cm}^2$. SIMS, AES and XPS were used to analyze hydrogen related species, chemical bonding states of C, Si as well as contamination oxygen due to hydrogen participation in the SiC-C films in order to study the different behaviors of hydrogen in carbon-carbide films due to different hydrogen introduction. Related mechanism about the effects of hydrogen on the element of the SiC-C films was discussed in this paper.

• Fire Science and Engineering
• /
• v.22 no.5
• /
• pp.43-47
• /
• 2008

Recently SIMS has attracted interest as new technique to distinguish the primary and the secondary arc beads. A Cs+ primary ion beam was used to detect the $^{12}C^-$, $^{63}Cu^-$, $^{18}O^-$, $^{35}Cl^-$ secondary ions which are formed during depth profiles in the copper wires. In this work, we studied thermal diffusion in the copper wire which are occurred with supplying over-current. The results demonstrated that Carbon and Chloride are diffused in PVC-coated copper wire deeper than none PVC-coated. However Oxygen showed the reverse diffusion property.

• Proceedings of the Korean Society of Medical Physics Conference
• /
• 2004.11a
• /
• pp.36-38
• /
• 2004

The detector size effect due to the spatial response of defectors is one critical source of inaccuracy in clinical dosimetry and has been a subject of numerous studies. Conventionally, the detector response kernel contains all of the influence that the detector size has on the measured beam profile. Various analytic models for this kernel have been proposed and studied in theoretical and experimental works. Here, we use a method to determine detector response kernel simply by using Monte Carlo simulation and convolution theory. Based on this numerical method and DOSIMETER, an EGS4 Monte Carlo code, the detector response for a Farmer type ion chamber embedded in water phantom is obtained. There exists characteristic difference in the simulated chamber readings between one with carbon graphite wall and the other with Acrylic wail. Using the obtained response and the convolution theory, we are planning to derive the detector response kernel numerically and remove detector size effect from measurements for 6MV, 10${\times}$l0cm2 and 0.5${\times}$10 cm2 photon beam.

• Proceedings of the Korean Society of Medical Physics Conference
• /
• 2002.09a
• /
• pp.199-201
• /
• 2002

Cancer therapy using high-energy $^{12}$ C ions is successfully under way at HIMAC, Japan. An alternative beam to $^{12}$ C is $^{11}$ C ions. The merit of $^{11}$ C over $^{12}$ C is its capability for monitoring spatial distribution of the irradiated $^{11}$ C by observing the $\beta$$^{+}$ decay with a good position resolution. One of the several problems to be solved before its use for therapy is the amount of nuclear interaction that deteriorates the dose concentration owing to the Bragg curve. Utilizing the dedicated secondary beam course for R&D studies at HIMAC, we measured the total energy loss of $^{11}$ C ions in a scintillator block that simulates the soft tissue in human bodies. In addition to the total absorption $^{11}$ C peak, non-negligible bump-shaped contribution is observed in the energy spectrum. The origin of the bump contribution can be nuclear interaction of the incident $^{11}$ C ions with hydrogen and carbon atoms. Further studies to reduce the ambiguity in dose distribution are mentioned.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.265-265
• /
• 2010

고분자 소재(polycarbonate; PC)의 표면을 보호하고 광학적 특성을 유지하기 위해 산화물 다층 박막과 비정질 탄소 박막(diamond-like carbon; DLC)을 전자빔 증착(e-beam evaporation)과 이온빔 증착(ion-beam deposition)을 이용하여 고분자 소재에 코팅하였다. 전자빔 증착으로 코팅된 실리콘과 티타늄 산화물 다층 박막은 소재 표면에서 가시광선의 반사율을 낮추는 효과를 가지고 있어 다양한 광학 코팅분야에서 이용되고 있다. 비정질 탄소 박막은 경도가 높고 마찰계수가 낮기 때문에 기계부품의 수명향상을 향상하기 위해 주로 사용되며, 본 연구에서는 고분자 소재의 최상층에 코팅하여 보호막으로 이용하였다. 고분자 윈도우에 산화물 다층 박막을 코팅하면 코팅되지 않은 기판과 비교하여 투과율이 향상되었으며 보호막으로 코팅된 비정질 탄소 박막에 의해서 일어나는 투과율 저하를 부분적으로 상쇄하는 효과를 보였다. 산화물 다층 박막의 수는 광학 분야에서는 주로 5-7층을 이용하지만 고분자 소재는 코팅 공정이 길어지면 열 변형이 일어날 수 있기 때문에 산화막의 층수를 낮추는데 초점이 맞춰졌다. 5층과 3층으로 코팅된 산화물 박막 모두 투과율이 향상되었으며 3층에 비해서 5층의 투과율 향상효과가 큰 것으로 나타났다. 고분자 소재의 투과율은 평균 약 90%이었으며 산화물 다층 박막과 비정질 탄소 박막을 코팅한 후 투과율이 약 81%로 측정되었다. 비정질 탄소 박막과 산화물 다층 박막을 적절하게 설계하고 코팅한다면 고분자 소재의 보호막으로 이용될 수 있을 것으로 판단된다.