• Journal of the Korean Ceramic Society
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• v.45 no.5
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• pp.285-289
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• 2008

Porous self-bonded silicon carbide (SiC) ceramics were fabricated at temperatures ranging from 1750 to $1850^{\circ}C$ using SiC, silicon (Si), and carbon (C) powders as starting materials. The effect of the Si:C ratio on porosity and strength was investigated as a function of sintering temperature. It was possible to produce self-bonded SiC ceramics with porosities ranging from 36% to 43%. The porous ceramics showed a maximal porosity when the Si:C ratio was 2:1 regardless of the sintering temperature. In contrast, the maximum strength was obtained when the ratio was 5:1.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.2
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• pp.45-49
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• 2019

Relatively fine silicon carbide (SiC) crystalline aggregates have been synthesized with the carbonized rice husks, paper sludge, coffee grounds as the carbon sources and the silica powder. The main reaction source to obtain silicon carbide (SiC) aggregates from the mixture of carbon sources and silica was inferred as the gaseous silicon monoxide (SiO) phase, being created from this mixture through the carbothermal reduction reaction. The silicon carbide (SiC) crystalline aggregates, fabricated from the carbonized rice husks and paper sludge, coffee grounds and silica ($SiO_2$) powder, were investigated by XRD patterns, FE-SEM and FE-TEM images. In these specimens, obtained from the carbonized rice husks, paper sludge and silica, XRD patterns showed rather high strong peak of (111) plane near $35^{\circ}$. The FE-TEM images and patterns of specimens, synthesized from carbonized rice husks, paper sludge, coffee grounds and silica under Ar atmosphere, showed relatively fine particles under $1{\mu}m$ and crystalline peak (110) of silicon carbide (SiC) diffraction pattern.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.53.1-53.1
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• 2009

실리콘 다층박막 태양전지를 위한 초고효율 실리콘 양자점 박막을 연구하기 위해 Silicon target과 Carbon target을 동시에 스퍼터하여 Silicon Carbide 박막을 증착하였다. Silicon Carbide 박막의 조성비는 target에 인가되는 RF Power를 조절하여 Auger Electro Spectroscopy를 사용하여 Si, C, O, N원소의 양을 정량화하여 측정하였다. Si Power를 200W에 고정하고, C Power를 0W에서 400W까지 변화시킬 때, $Si_{1-x}$ $C_x$ 박막에서 조성비 x는 0 ~ 0.43 범위였다. 이 박막을 증착 한 후에 질소 분위기에서 600 ~ $1000^{\circ}C$ 온도로 열처리를 진행하였다. High resolution TEM과 Raman 분석을 통해, 박막의 열처리 후 $Si_{1-x}$ $C_x$ 박막 내에 실리콘 양자점이 형성되었음을 관찰할 수 있었고, 2 ~ 10 nm 의 크기를 가지는 것으로 확인할 수 있었다. 이 실리콘 양자점을 포함한 $Si_{1-x}$ $C_x$ 박막을 적층하여 UV-VIS-NIR spectroscopy, FTIR및 PL와 같은 측정을 통해 광학적 에너지 밴드갭의 변화와 그에 따른 특성을 확인하였다.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.467-473
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• 1996

Heteroepitaxial growth of cubic silicon carbide films on Si(001) and Si(111) substrates at temperatures 900-$1000^{\circ}C$ has been achieved by high vacuum chemical vapor deposition using the single precursor 1, 3-disilabutane without carrying out the carbonization process of the substrate surfaces. The deposition temperature range is much lowered compared with conventiontional chemical vapor deposition where separate sources for silicon and carbon are employed. The deposition procedure is quite simple and safe. The qualities of the films were found to be very good judging from the results obtained by various characterization techniques including reflection high energy electron diffraction, X-ray diffraction, X-ray pole figure analysis, Rutherford backscattering spectrometry, Auger depth profiling, and transmission electron diffraction.

• Journal of Powder Materials
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• v.21 no.6
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• pp.467-472
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• 2014

RBSC (reaction-bonded silicon carbide) represents a family of composite ceramics processed by infiltrating with molten silicon into a skeleton of SiC particles and carbon in order to fabricate a fully dense body of silicon carbide. RBSC has been commercially used and widely studied for many years, because of its advantages, such as relatively low temperature for fabrication and easier to form components with near-net-shape and high relative density, compared with other sintering methods. In this study, RBSC was fabricated with different size of SiC in the raw material. Microstructure, thermal and mechanical properties were characterized with the reaction-sintered samples in order to examine the effect of SiC size on the thermal and mechanical properties of RBSC ceramics. Especially, phase volume fraction of each component phase, such as Si, SiC, and C, was evaluated by using an image analyzer. The relationship between microstructures and physical properties was also discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.433-433
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• 2011

Since the concept of graphene was established, it has been intensively investigated by researchers. The unique characteristics of graphene have been reported, the graphene attracted a lot of attention for material overcomes the limitations of existing semiconductor materials. Because of these trends, economical fabrication technique is becoming more and more important topic. Especially, the epitaxial growth method by sublimating the silicon atoms on Silicon carbide (SiC) substrate have been reported on the mass production of high quality graphene sheets. Although SiC exists in a variety of polytypes, the 3C-SiC polytypes is the only polytype that grows directly on Si substrate. To practical use of graphene for electronic devices, the technique, forming the graphene on 3C-SiC(111)/Si structure, is much helpful technique. In this paper, we report on the growth of graphene on 3C-SiC(111) surface. To investigate the morphology of formed graphene on the 3C-SiC(111) surface, the radial distribution function (RDF) was calculated using molecular dynamics (MD) simulation. Through the comparison between the kinetic energies and the diffusion energy barrier of surface carbon atoms, we successfully determined that the graphitization strongly depends on temperature. This graphitization occurs above the annealing temperature of 1500K, and is also closely related to the behavior of carbon atoms on SiC surface. By analyzing the results, we found that the diffusion energy barrier is the key parameter of graphene growth on SiC surface.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.523-527
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• 2012

Silicon carbide (SiC) has recently drawn an enormous amount of industrial interest due to its useful mechanical properties, such as its thermal resistance, abrasion resistance and thermal conductivity at high temperatures. In this study, RF thermal plasma (PL-35 Induction Plasma, Tekna CO., Canada) was utilized for the synthesis of high-purity SiC powder from an organic precursor (hexamethyldisilazane, vinyltrimethoxysilane). It was found that the SiC powders obtained by the RF thermal plasma treatment included free carbon and amorphous silica ($SiO_2$). The SiC powders were further purified by a thermal treatment and a HF treatment, resulting in high-purity SiC nano-powder. The particle diameter of the synthesized SiC powder was less than 30 nm. Detailed properties of the microstructure, phase composition, and free carbon content were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), a thermogravimetric (TG) analysis, according to the and Brunauer-Emmett-Teller (BET) specific surface area from N2 isotherms at 77 K.

• Journal of the Korean Ceramic Society
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• v.43 no.9 s.292
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• pp.552-557
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• 2006

A low temperature processing route for fabricating porous SiC ceramics by carbothermal reduction has been demonstrated. Effects of expandable microsphere content, sintering temperature, filler content, and carbon source on microstructure, porosity, compressive strength, cell size, and cell density were investigated in the processing of porous silicon carbide ceramics using expandable microspheres as a pore former. A higher microsphere content led to a higher porosity and a higher cell density. A higher sintering temperature resulted in a decreased porosity because of an enhanced densification. The addition of inert filler increased the porosity, but decreased the cell density. The compressive strength of the porous ceramics decreased with increasing the porosity. Typical compressive strength of porous SiC ceramics with ${\sim}70%$ porosity was ${\sim}13 MPa$.

• Journal of the Korean Ceramic Society
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• v.46 no.5
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• pp.534-539
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• 2009

Reaction Bonded Silicon Carbide(RBSC) has been used for engineering ceramics due to low-temperature fabrication and near-net shape products with excellent structural properties such as thermal shock resistance, corrosion resistance and mechanical strength. Recently, attempts have been made to develop hot gas filter with gradient pore structure by RBSC to overcome weakness of commercial clay-bonded SiC filter such as low fracture toughness and low reliability. In this study a fabrication process of porous RBSC with multi-layer pore structure with gradient pore size was developed. The support layer of the RBSC with multi-layer pore structure was fabricated by conventional Si infiltration process. The intermediate and filter layers consisted of phenolic resin and fine SiC powder were prepared by dip-coating of the support RBSC in slurry of SiC and phenol resin. The temperature of $1550^{\circ}C$ to make Si left in RBSC support layer infiltrate into dip-coated layer to produce SiC by reacting with pyro-carbon from phenol resin.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.625-630
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• 2012

Highly porous silicon carbide (SiC) ceramics were fabricated from polysiloxane, SiC and carbon black fillers, AlN-$Y_2O_3$ additives, and poly (ether-co-octene) (PEOc) and expandable microsphere templates. Powder mixtures with a fixed PEOc content (30 wt%) and varying SiC filler contents from 0-21 wt% were compression-molded. During the pyrolysis process, the polysiloxane was converted to SiOC, the PEOc generated a considerable degree of interconnected porosity, and the expandable microspheres generated fine cells. The polysiloxane-derived SiOC and carbon black reacted and synthesized nano-sized SiC with a carbothermal reduction during a heat-treatment. Subsequent sintering of the compacts in a nitrogen atmosphere produced highly porous SiC ceramics with porosities ranging from 78 % to 82 % and a flexura lstrength of up to ~7 MPa.