• Title/Summary/Keyword: Capture cross section

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Fully nonlinear inelastic analysis of rectangular CFST frames with semi-rigid connections

  • Bui, Van-Tuong;Vu, Quang-Viet;Truong, Viet-Hung;Kim, Seung-Eock
    • Steel and Composite Structures
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    • v.38 no.5
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    • pp.497-521
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    • 2021
  • In this study, an effective numerical method is introduced for nonlinear inelastic analyses of rectangular concrete-filled steel tubular (CFST) frames for the first time. A steel-concrete composite fiber beam-column element model is developed that considers material, and geometric nonlinearities, and residual stresses. This is achieved by using stability functions combined with integration points along the element length to capture the spread of plasticity over the composite cross-section along the element length. Additionally, a multi-spring element with a zero-length is employed to model the nonlinear semi-rigid beam-to-column connections in CFST frame models. To solve the nonlinear equilibrium equations, the generalized displacement control algorithm is adopted. The accuracy of the proposed method is firstly verified by a large number of experiments of CFST members subjected to various loading conditions. Subsequently, the proposed method is applied to investigate the nonlinear inelastic behavior of rectangular CFST frames with fully rigid, semi-rigid, and hinged connections. The accuracy of the predicted results and the efficiency pertaining to the computation time of the proposed method are demonstrated in comparison with the ABAQUS software. The proposed numerical method may be efficiently utilized in practical designs for advanced analysis of the rectangular CFST structures.

Measurements of Interface States In a MOS Capacitor by DLTS System Using Wideband Monophase Lock-in Amplifier (광대역 단상 Lock-in 증폭기 DLTS 시스템을 이용한 MOS Capacitor 계면상태 측정)

  • Bae, Dong-Gun;Chung, Sang-Koo
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.23 no.6
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    • pp.807-813
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    • 1986
  • Measurements of interface states in a MOS capacitor by DLTS system using wideband monophase lock-in amplifier are discussed. A new signal analysis method that takes into account the bias pulse width and the gate off width is presented to remove the errors in the measured parameters of interface states resulting from the traditional method which neglects the effect of those widths. Theoretical calculations are made for the parameters related to the rate window, signal to noise ratio, and the energy resolution. On the grounds of this discussion, interface states of the MOS capacitor on p-type substrate of (110) orentation are measured with the optimal gate-off width with respect to the S/N ratio and the energy resolution. The results are interface state density of the order of 10**10 (cm-\ulcornereV**-1) to 10**11 (cm-\ulcornereV**-1) in the energy range of Ev+0.15(dV) to Ev+0.5(eV), and constant capture cross section of the order of 10**-16 (cm\ulcorner.

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Thermal-annealing behavior of in-core neutron-irradiated epitaxial 4H-SiC

  • Junesic Park ;Byung-Gun Park;Gwang-Min Sun
    • Nuclear Engineering and Technology
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    • v.55 no.1
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    • pp.209-214
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    • 2023
  • The effect of thermal annealing on defect recovery of in-core neutron-irradiated 4H-SiC was investigated. Au/SiC Schottky diodes were manufactured using a 4H-SiC epitaxial wafer that was neutron-irradiated at the HANARO research reactor. The electrical characteristics of their epitaxial layers were analyzed under various conditions, including different neutron fluences (1.3 × 1017 and 2.7 × 1017 neutrons/cm2) and annealing times (up to 2 h at 1700 ℃). Capacity-voltage measurements showed high carrier compensation in the neutron-irradiated samples and a recovery tendency that increased with annealing time. The carrier density could be recovered up to 77% of the bare sample. Deep-level-transient spectroscopy revealed intrinsic defects of 4H-SiC with energy levels 0.47 and 0.68 eV below the conduction-band edge, which were significantly increased by in-core neutron irradiation. A previously unknown defect with a high electron-capture cross-section was discovered at 0.36 eV below the conduction-band edge. All defect concentrations decreased with 1700 ℃ annealing; the decrease was faster when the defect level was shallow.

OECD/NEA BENCHMARK FOR UNCERTAINTY ANALYSIS IN MODELING (UAM) FOR LWRS - SUMMARY AND DISCUSSION OF NEUTRONICS CASES (PHASE I)

  • Bratton, Ryan N.;Avramova, M.;Ivanov, K.
    • Nuclear Engineering and Technology
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    • v.46 no.3
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    • pp.313-342
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    • 2014
  • A Nuclear Energy Agency (NEA), Organization for Economic Co-operation and Development (OECD) benchmark for Uncertainty Analysis in Modeling (UAM) is defined in order to facilitate the development and validation of available uncertainty analysis and sensitivity analysis methods for best-estimate Light water Reactor (LWR) design and safety calculations. The benchmark has been named the OECD/NEA UAM-LWR benchmark, and has been divided into three phases each of which focuses on a different portion of the uncertainty propagation in LWR multi-physics and multi-scale analysis. Several different reactor cases are modeled at various phases of a reactor calculation. This paper discusses Phase I, known as the "Neutronics Phase", which is devoted mostly to the propagation of nuclear data (cross-section) uncertainty throughout steady-state stand-alone neutronics core calculations. Three reactor systems (for which design, operation and measured data are available) are rigorously studied in this benchmark: Peach Bottom Unit 2 BWR, Three Mile Island Unit 1 PWR, and VVER-1000 Kozloduy-6/Kalinin-3. Additional measured data is analyzed such as the KRITZ LEU criticality experiments and the SNEAK-7A and 7B experiments of the Karlsruhe Fast Critical Facility. Analyzed results include the top five neutron-nuclide reactions, which contribute the most to the prediction uncertainty in keff, as well as the uncertainty in key parameters of neutronics analysis such as microscopic and macroscopic cross-sections, six-group decay constants, assembly discontinuity factors, and axial and radial core power distributions. Conclusions are drawn regarding where further studies should be done to reduce uncertainties in key nuclide reaction uncertainties (i.e.: $^{238}U$ radiative capture and inelastic scattering (n, n') as well as the average number of neutrons released per fission event of $^{239}Pu$).

An Analysis of U-233 Resonance Absorption

  • Yoo, Kun-Joong;Mann Cho;Kim, Chang H.;Chi, Chang-Yul
    • Nuclear Engineering and Technology
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    • v.7 no.4
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    • pp.267-275
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    • 1975
  • The low-lying resolved resonance structure of U-233 is investigated in terms of the Adler-Adler multilevel formalism. The resonance capture and fission cross sections of U-233 below 60 eV are calculated using Adlers' effective resonance parameters. The infinite dilution resonance integrals of U-233 are computed with the use of the Alders' parameters adjusted to fit the cross section data. It is found that the agreement of calculations with experiments is generally good over most of the energy region covered. A transformation of the Adlers' multilevel parameters into an equivalent set of the single level pseudoparameters is made for the use of the existing computer codes which are useful in the reactor calculations but do not have capability to use the multilevel parameters. The results of this transformation are presented in the form of a table.

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Stainless steel 기판에서 제조된 CIGS 박막 태양전지의 ZnO 확산 방지막을 이용한 deep level defect 감소 연구

  • Kim, Jae-Ung;Kim, Hye-Jin;Kim, Gi-Rim;Kim, Jin-Hyeok;Jeong, Chae-Hwan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.393-393
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    • 2016
  • Cu(In,Ga)Se2 (CIGS) 박막 태양전지는 높은 효율과 낮은 제조비용, 높은 신뢰성으로 인해 박막 태양전지 중 가장 각광받고 있다. 특히 유리기판 대신 가볍고 유연한 철강소재나 플라스틱 소재를 이용하여 발전분야 외에 건물일체형, 수송용, 휴대용등 다양한 분야에 적용이 가능하다. 이러한 유연 기판을 이용한 CIGS 태양전지의 개발을 위해서는 기판의 특성에 따른 다양한 공정개발이 선행되어야 한다. Stainless steel과 같은 철강기판의 경우 Fe, Ni, Cr등의 불순물이 확산되어 흡수층의 특성을 저하시켜 효율을 감소시킨다. 따라서 이러한 철강 기판의 경우 불순물의 확산을 방지하는 확산방지막이 필수적이다. 이러한 유연기판의 특성을 고려하여 본 연구에서는 기존의 두껍고 추가 장비가 요구되는 SiOx나 Al2O3 대신 200nm 이하의 ZnO 박막을 이용하여 확산방지막을 제조하였다. 유연기판으로 STS 430 stainless steel을 이용하였다. 먼저 stainless steel 기판을 이용하여 기판에 의한 흡수층의 특성을 분석하였으며 ZnO 확산 방지막의 유무 및 두께에 따른 흡수층 및 소자의 특성을 분석하였다. 이때 확산 방지막은 기존 TCO 공정에서 사용되는 i-ZnO를 사용하였으며 RF sputter를 이용하여 50~200nm로 두께를 달리하며 특성 비교를 실시하였다. 효율은 확산방지막을 적용하지 않았을 때 약 5.9%에서 확산 방지막 적용시 약 10.7%로 증가하였다. 그 후 기판으로부터 확산되는 불순물의 유입에 의한 결함을 분석하기 위해 DLTS를 이용하여 소자 특성을 분석하였다. 온도는 80~300K으로 가변하며 측정을 실시하였으며 그 후 계산을 통해 activation energy와 capture cross section 값을 구하였다. DLTS 분석 결과 Ni이 CIGS 흡수층으로 확산되어 NiCu anti-site를 형성하여 태양전지의 효율을 감소시키는 것을 확인하였다. 모든 흡수층은 Co-Evaporation 방법을 이용하여 제조하였으며 제조된 흡수층은 SEM, XRF, XRD, GD-OES, PL, Raman등을 이용하여 분석하였으며 그 외 일반적인 방법을 이용하여 Mo, CdS, TCO, Al grid를 제조하였다. AR 코팅은 제외 하였으며 제조된 소자는 솔라 시뮬레이터를 이용하여 효율 특성 분석을 실시하였으며 Q.E. 분석을 실시하였다.

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A Study on the Characteristics of Si-$SiO_2$ interface in Short channel SONOSFET Nonvolatile Memories (Short channel SONOSFET 비휘발성 기억소자의 Si-$SiO_2$ 계면특성에 관한 연구)

  • Kim, Hwa-Mok;Yi, Sang-Bae;Seo, Kwang-Yell;Kang, Chang-Su
    • Proceedings of the KIEE Conference
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    • 1993.07b
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    • pp.1268-1270
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    • 1993
  • In this study, the characteristics of Si-$SiO_2$ interface and its degradation in short channel SONOSFET nonvolatile memory devices, fabricated by 1Mbit CMOS process($1.2{\mu}m$ design rule), with $65{\AA}$ blocking oxide layer, $205{\AA}$ nitride layer, and $30{\AA}$ tunneling oxide layer on the silicon wafer were investigated using the charge pumping method. For investigating the Si-$SiO_2$ interface characteristics before and after write/erase cycling, charge pumping current characteristics with frequencies, write/erase cycles, as a parameters, were measured. As a result, average Si-$SiO_2$ interface trap density and mean value of capture cross section were determined to be $1.203{\times}10^{11}cm^{-2}eV^{-1}\;and\;2.091{\times}10^{16}cm^2$ before write/erase cycling, respectively. After cycling, when the write/erase cycles are $10^4$, average $Si-SiO_2$ interface trap density was $1.901{\times}10^{11}cm^{-2}eV^{-1}$. Incresing write/erase cycles beyond about $10^4$, Si-$SiO_2$ interface characteristics with write/erase cycles was increased logarithmically.

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An approach to minimize reactivity penalty of Gd2O3 burnable absorber at the early stage of fuel burnup in Pressurized Water Reactor

  • Nabila, Umme Mahbuba;Sahadath, Md. Hossain;Hossain, Md. Towhid;Reza, Farshid
    • Nuclear Engineering and Technology
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    • v.54 no.9
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    • pp.3516-3525
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    • 2022
  • The high capture cross-section (𝜎c) of Gadolinium (Gd-155 and Gd-157) causes reactivity penalty and swing at the initial stage of fuel burnup in Pressurized Water Reactor (PWR). The present study is concerned with the feasibility of the combination of mixed burnable poison with both low and high 𝜎c as an approach to minimize these effects. Two considered reference designs are fuel assemblies with 24 IBA rods of Gd2O3 and Er2O3 respectively. Models comprise nuclear fuel with a homogeneous mixture of Er2O3, AmO2, SmO2, and HfO2 with Gd2O3 as well as the coating of PaO2 and ZrB2 on the Gd2O3 pellet's outer surface. The infinite multiplication factor was determined and reactivity was calculated considering 3% neutron leakage rate. All models except Er2O3 and SmO2 showed expected results namely higher values of these parameters than the reference design of Gd2O3 at the early burnup period. The highest value was found for the model of PaO2 and Gd2O3 followed by ZrB2 and HfO2. The cycle burnup, discharge burnup, and cycle length for three batch refueling were calculated using Linear Reactivity Model (LRM). The pin power distribution, energy-dependent neutron flux and Fuel Temperature Coefficient (FTC) were also studied. An optimization of model 1 was carried out to investigate effects of different isotopic compositions of Gd2O3 and absorber coating thickness.

Analysis of Electrical Characteristics due to Deep Level Defects in 4H-SiC PiN Diodes (4H-SiC PiN 다이오드의 깊은 준위 결함에 따른 전기적 특성 분석)

  • Tae-Hee Lee;Se-Rim Park;Ye-Jin Kim;Seung-Hyun Park;Il Ryong Kim;Min Kyu Kim;Byeong Cheol Lim;Sang-Mo Koo
    • Korean Journal of Materials Research
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    • v.34 no.2
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    • pp.111-115
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    • 2024
  • Silicon carbide (SiC) has emerged as a promising material for next-generation power semiconductor materials, due to its high thermal conductivity and high critical electric field (~3 MV/cm) with a wide bandgap of 3.3 eV. This permits SiC devices to operate at lower on-resistance and higher breakdown voltage. However, to improve device performance, advanced research is still needed to reduce point defects in the SiC epitaxial layer. This work investigated the electrical characteristics and defect properties using DLTS analysis. Four deep level defects generated by the implantation process and during epitaxial layer growth were detected. Trap parameters such as energy level, capture-cross section, trap density were obtained from an Arrhenius plot. To investigate the impact of defects on the device, a 2D TCAD simulation was conducted using the same device structure, and the extracted defect parameters were added to confirm electrical characteristics. The degradation of device performance such as an increase in on-resistance by adding trap parameters was confirmed.

An Assessment on the Contribution of $^3$He to the Tritium Generation in the CANDU PHWR (가압중수로에서 헬륨-3이 삼중수소의 생성에 미치는 영향평가)

  • Kwak, Sung-Woo;Chung, Bum-Jin
    • Journal of Radiation Protection and Research
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    • v.22 no.2
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    • pp.119-125
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    • 1997
  • PHWR achieves high neutron economy by adopting heavy water as its moderator and coolant. On the other hand it permits much tritium generation, compared to LWR, due to the neutron capture reaction of deuterium in heavy water. Meanwhile in the reactor core, $^3He formed as the result of-decay of tritium, captures a thermal neutron and transforms to tritium again. The existing calculation models on tritium generation in PHWR neglect the contribution of $^3He$ in both moderator and coolant due to its relatively low solubility. However the neutron capture cross-section of $^3He$ is almost $1.6{\times}10^7$ times as large as that of deuterium. That means that the dissolved amount of 0.03 ppm of $^3He$ in heavy water is enough to generate the same amount of tritium as that generated by the deuterium of total heavy water in the system. This study dealt with the contribution of $^3He$ to tritium generation. As a sample case, the contribution of $^3He$ to the tritium generation in Wolsong #1 was evaluated and compared to the measured values. According to the result of this study, it is concluded that $^3He$ in coolant contributes very much to the tritium generation but that in moderator shows negligible effects due to the low solubility and $^4He$ cover gas. At the beginning of the plant operation, the contribution of $^3He$ is slightly greater than the measured value but agrees well with the measured as the operating time increases.

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