• Title/Summary/Keyword: Capless LDO

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Capless Low Drop Out Regulator With Fast Transient Response Using Current Sensing Circuit (전류 감지 회로를 이용한 빠른 과도응답특성을 갖는 capless LDO 레귤레이터)

  • Jung, Jun-Mo
    • Journal of IKEEE
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    • v.23 no.2
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    • pp.552-556
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    • 2019
  • This paper present a capless low drop out regulator (LDO) that improves the load transient response characteristics by using a current regulator. A voltage regulator circuit is placed between the error amplifier and the pass transistor inside the LDO regulator to improve the current characteristics of the voltage line, The proposed fast transient LDO structure was designed by a 0.18 um process with cadence's virtuoso simulation. according to test results, the proposed circuit has a improved transient characteristics compare with conventional LDO. the simulation results show that the transient of rising increases from 1.954 us to 1.378 us and the transient of falling decreases from 19.48 us to 13.33 us compared with conventional capless LDO. this Result has improved response rate of about 29%, 28%.

LDO Regulator with Improved Transient Response Characteristics and Load Transient Detection Structure (Load Transient Detection 구조 및 개선된 과도응답 특성을 갖는 LDO regulator)

  • Park, Tae-Ryong
    • Journal of IKEEE
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    • v.26 no.1
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    • pp.124-128
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    • 2022
  • Conventional LDO regulator external capacitors can reduce transient response characteristics such as overshoot and undershoot. However, the capacitorless LDO regulator proposed in this study applied body technology to the pass transistor to improve the transient response and provide excellent current drive capability. The operating conditions of the proposed LDO regulator are set to an input voltage that varies from 3.3V to 4.5V, a maximum load current of 200mA, and an output voltage of 3V. As a result of the measurement, it was found that when the load current was 100 mA, the voltage was 95 mV in the undershoot state and 105 mV in the overshoot state.

LDO Regulator with Improved Load Regulation Characteristics and Feedback Detection Structure (피드백 감지 회로 구조로 인한 향상된 Load Regulation 특성을 가진 LDO 레귤레이터)

  • Jung, Jun-Mo
    • Journal of IKEEE
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    • v.24 no.4
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    • pp.1162-1166
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    • 2020
  • In this paper Low Drop-Out (LDO) regulator that improved load regulation characteristics due to the feedback detection structure. The proposed feedback sensing circuit is added between the output of the LDO's internal error amplifier and the input of the pass transistor to improve the regulation of the delta value coming into the output. It has a voltage value with improved load regulation characteristics than existing LDO regulator. The proposed LDO structure was analyzed in Samsung 0.13um process using Cadence's Virtuoso, Spectre simulator.

LDO Regulator with Improved Load Regulation Characteristics and Current Detection Structure (Current Detection 구조 및 향상된 Load Regulation 특성을 가진 LDO 레귤레이터)

  • Kwon, Sang-Wook;Kong, June Ho;Koo, Yong Seo
    • Journal of IKEEE
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    • v.25 no.3
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    • pp.506-510
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    • 2021
  • In this paper, we propose an LDO that improves the load regulation change due to the current detection structure. The proposed LDO regulator adds the proposed current detection circuit to the output stage. Thereby to improve the load regulation of the delta value coming in on the output has a voltage value of an improved load Regulation characteristics than conventional LDO regulator. Using the proposed current detection structure, it was possible to improve the output change according to the change of the load current by about 60%. The proposed circuit has been simulated and verified characteristics by using a Spectre, Virtuoso simulation of Cadence.

A Low Drop Out Regulator with Improved Load Transient Characteristics and Push-Pull Pass Transistor Structure (Push-Pull 패스 트랜지스터 구조 및 향상된 Load Transient 특성을 갖는 LDO 레귤레이터)

  • Kwon, Sang-Wook;Song, Bo Bae;Koo, Yong-Seo
    • Journal of IKEEE
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    • v.24 no.2
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    • pp.598-603
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    • 2020
  • In this paper present a Low Drop-Out(LDO) regulator that improves load transient characteristics due to the push-pull pass transistor structure is proposed. Improved load over the existing LDO regulator by improving the overshoot and undershoot entering the voltage line by adding the proposed push-pull circuit between the output stage of the error amplifier inside the LDO regulator and the gate stage of the pass transistor and the push-pull circuit at the output stage. It has a delta voltage value of transient characteristics. The proposed LDO structure was analyzed in Samsung 0.13um process using Cadence's Virtuoso, Spectre simulator.