• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.3
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• pp.77-85
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• 2008

This work proposes a 12b 130MS/s 108mW $1.8mm^2$ 0.18um CMOS ADC for high-quality video systems such as TFT-LCD displays and digital TVs requiring simultaneously high resolution, low power, and small size at high speed. The proposed ADC optimizes power consumption and chip area at the target resolution and sampling rate based on a three-step pipeline architecture. The input SHA with gate-bootstrapped sampling switches and a properly controlled trans-conductance ratio of two amplifier stages achieves a high gain and phase margin for 12b input accuracy at the Nyquist frequency. A signal-insensitive 3D-fully symmetric layout reduces a capacitor and device mismatch of two MDACs. The proposed supply- and temperature- insensitive current and voltage references are implemented on chip with a small number of transistors. The prototype ADC in a 0.18um 1P6M CMOS technology demonstrates a measured DNL and INL within 0.69LSB and 2.12LSB, respectively. The ADC shows a maximum SNDR of 53dB and 51dB and a maximum SFDR of 68dB and 66dB at 120MS/s and 130MS/s, respectively. The ADC with an active die area of $1.8mm^2$ consumes 108mW at 130MS/s and 1.8V.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.9 s.339
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• pp.1-8
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• 2005

A $0.35\mu$m SiGe BiCMOS fabrication process has been timely developed, which is aiming at wireless RF ICs development and fast growing SiGe RF market. With non-selective SiGe epilayer, SiGe HBTs in this process used trapezoidal Ge base profile for the enhanced AC performance via Ge induced bandgap niuoin. The characteristics of hFE 100, $f_{T}\;45GHz,\;F_{max}\;50GHz,\;NF_{min}\;0.8dB$ have been obtained by optimizing not only SiGe base profile but also RTA condition after emitter polysilicon deposition, which enables the SiGe technology competition against the worldwide cutting edge SiGe BiCMOS technology. In addition, the process incorporates the CMOS logic, which is fully compatible with $0.35\mu$m pure logic technology. High Q passive elements are also provided for high precision analog circuit designs, and their quality factors of W(1pF) and inductor(2nH) are 80, 12.5, respectively.

• Investigative Magnetic Resonance Imaging
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• v.11 no.1
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• pp.20-26
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• 2007

Purpose : The purpose of the present study was to develop and optimize solenoid coil for animal- model in 3 T MRI system and investigate and compare with the birdcage coil concerning the image quality with the various parameters such as SNR and Q-factor. Materials and Methods : Solenoid coil for animal-model was made on the acryl structure (diameter 4 cm, length 10 cm) 3 times-winding cooper tape of width 2 cm, thickness 0.05 cm and length 10 cm with 2 cm interval between winded tapes. Capacitors from 2 pF to 100 pF were used, and the solenoid coil was designed for receiver only coil. Results : SNR of the developed solenoid was 985 in CuSO4 0.7 g/L and 995 in rat experiment. Q-factor was 84-89 in unloaded condition and 203-206 in loaded condition. Conclusion : The resolution of the image obtained from solenoid was relatively higher than that of the conventional birdcage coil. In addition, the homogeneity of RF field by coil simulation was significantly excellent. The present study demonstrated that the solenoid coil could be useful to obtain small animal images with better contrast, resolution, visibility than images from birdcage.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.2 s.117
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• pp.126-135
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• 2007

This paper proposes a new miniaturization method for a parallel coupled line filter with enhanced bandwidth characteristics. A previous method incorporated several advantages, such as size reduction through the use of only a small number of capacitors, in addition to grounding, suppression of harmonic characteristics, and improved skirt characteristics for the parallel coupled line filter, which is conventional in the field of RE filters due to its design and fabrication simplicity. However, the previous method also has disadvantages related to the bandwidth shrinkage of the miniaturized filters. In this paper, the amount of bandwidth shrinkage is analyzed in terms of the relationship between the loaded Q(quality factor) and the group delay of a resonator. Moreover, the reduction in the bandwidth is solved by a design with new design equations. To show the validity of the proposed method, a hairpin filter with a center frequency of 5.2 GHz and an fractional bandwidth(FBW) of 10% was scaled down to half its original dimension by the proposed method with the enhanced bandwidth characteristics. The measured result shows a high level of agreement with theoretical results.

• Korean Journal of Materials Research
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• v.5 no.6
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• pp.754-762
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• 1995

Strontium titanate(SrTiO$_3$) thin film was prepared on Si substrates by RF magnetron sputtering for a high capacitance density required for the next generation of LSTs. The optimum deposition conditions for SrTiO$_3$thin film were investigated by controlling the deposition parameters. The crystallinity of films and the interface reactions between SrTO$_3$film and Si substrate were characterized by XRD and AES respectively. High quality films were obtained by using the mixed gas of Ar and $O_2$for sputtering. The films were deposited at various bias voltages to obtain the optimum conditions for a high quality file. The best crystallinity was obtained at film thickness of 300nm with the sputtering gas of Ar+20% $O_2$and the bias voltage of 100V. The barrier layer of Pt(100nm)/Ti(50nm) was very effective in avoiding the formation of SiO$_2$layer at the interface between SrTiO$_3$film and Si substrate. The capacitor with Au/SrTiO$_3$/Pt/Ti/SiO$_2$/Si structure was prepared to measure the electric and the dielectric properties. The highest capacitance and the lowest leakage current density were obtained by annealing at $600^{\circ}C$ for 2hrs. The typical specific capacitance was 6.4fF/$\textrm{cm}^2$, the relative dielectric constant was 217, and the leakage current density was about 2.0$\times$10$^{-8}$ A/$\textrm{cm}^2$ at the SrTiO$_3$film with the thickness of 300nm.

• Progress in Medical Physics
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• v.12 no.1
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• pp.51-58
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• 2001

Synchrotron radiation (SR) has several advantages over convetional x-rays, including its phase, collimation, and high flux. A synchrotron radiation beamline 5C1 at Pohang Light Source (PLS) was recently built for imaging applications. We have shown that a SR imaging system is useful in imaging microscopic structures. SR with broad-band energy spectrum were adjusted to an object by Si wafers and their energy were approximately ranging from 6 keV to 30 keV. SR were passed through an object and finally transformed into visible lights by CdWO$_4$ scintillator screen. The visible lights which were reflected at an angle of 90 degrees by gold plated mirror were detected by a CCD camera and the image data were acquired using image acquisition system. A high-resolution phantom, capacitor, adult tooth, child tooth, cancerous breast tissue, and mouse lumbar vertebra were imaged with SR imaging system. The Objects were rotated within the field of view of the CCD detector, and their projection image data were obtained at 250 steps over 180 degrees rotation. Image reconstructions were carried out in a PC by using IDLTM(Research systems, Inc., US) program. The spatial resolution of the images acquired by the SR imaging system was measured with a high-resolution chart manufactured for several micrometer resolution. The specimens were also imaged with conventional x-ray radiography system to compare the image quality of radiography obtained with the SR imaging system. The results showed more structural details and high contrast images with SR imaging system than conventional x-ray radiography system. The SR imaging system may have a potential for imaging in biological researches, material applications, and clinical radiography.