• 한국세라믹학회지
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• 제32권3호
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• pp.371-377
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• 1995

Silicon oxide films were grown on single-crystal silicon substrates at low temperatures (25~205$^{\circ}C$) in a low pressure electron cyclotron resonance (ECR) oxygen plasma. The growth rate of the silicon oxide film increased as the temperature increased or the pressure decreased. Also, the thickness of the silicon oxide film increased at negative bias voltage, but not changed at positive bias voltage. The growth law of the silicon oxide film was approximated to the parabolic form. Capacitance-voltage (C-V) and current density-electric field (J-E) characteristics were studied using Al/SiO2/p-Si MOS structures. For a 10.2 nm thick silicon oxide film, the leakage current density at the electric field of 1 MVcm-1 was less than 1.0$\times$10-8Acm-2 and the breakdown field was higher than 10 MVcm-1. The flat band voltage of Al/SiO2/p-Si MOS capacitor was varied in the range of -2~-3 V and the effective dielectric constant was 3.85. These results indicate that high quality oxide films with properties that are similar to those of thermal oxide film can be fastly grown at low temperature using the ECR oxygen plasma.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.143-144
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• 2011

Due to enhanced demands on quality, security and reliability of the electric power energy system, a microgrid has become a subject of special interest. In this paper, output characteristics of energy storage system (ESS) with an electric double layer capacitor (EDLC) and battery energy storage system (BESS) of a renewable energy based microgrid were analyzed under grid-connected and islanded operation modes. The microgrid which consists of photovoltaic and wind power turbine generators, diesel generator, ESS with an EDLC, BESS and loads was modeled using real time digital simulator. The results present the effective control patterns of the microgrid system.

• 한국전기전자재료학회논문지
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• 제27권9호
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• pp.547-550
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• 2014

In this study, the electrical characteristics of the nickel (Ni)/carbon nanotube (CNT)/$SiO_2$ structures were investigated in order to analyze the mechanism of CNT in MOS device structures. We fabricated 4H-SiC MOS capacitors with or without CNTs. CNT was dispersed by isopropyl alcohol. The capacitance-voltage (C-V) and current-voltage (I-V) are characterized. Both devices were measured by Keithley 4200 SCS. The experimental flatband voltage ($V_{FB}$) shift was positive. Near-interface trap charge density ($N_{it}$) and negative oxide trap charge density ($N_{ox}$) value of CNT embedded MOS capacitors was less than that values of reference samples. Also, the leakage current of CNT embedded MOS capacitors is higher than reference samples. It has been found that its oxide quality is related to charge carriers and/or defect states in the interface of MOS capacitors.

• 전기학회논문지
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• 제65권10호
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• pp.1655-1663
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• 2016

Recently the researches on Modular Multi-level Converter (MMC) are being highlighted because high quality and efficient power transmission are key issues in the High Voltage Direct Current (HVDC) transmission system. This paper proposes an improved pre-charging method for the sub-module capacitors in MMC that operates in Nearest Level Control (NLC) modulation. The proposed method does not require additional circuits or Pulse Width Modulation (PWM) techniques. The feasibility of proposed method was verified through computer simulations for a scaled 3-phase 10kVA MMC with 12 sub-modules per each arm. Hardware experiments with a scaled prototype were performed in the lab to confirm the simulation results.

• 전력전자학회논문지
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• 제17권4호
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• pp.291-297
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• 2012

Recently, Switching devices become cheaper, depending on the multi-level inverters are considered as the power-conversion systems for high-power and power-quality demanding applications. The multi-level inverters can reduce the THD(Total Harmonic Distortion) as the output which is similar sinusoidal waveform by synthesizing several capacitor DC voltages. However it has some disadvantages such as increased number of components, complex PWM control method. Therefore, this paper is proposed the new multi-level inverter topology using an new H-bridge output stage with a bidirectional auxiliary switch. The proposed topology is the 4-level 3-phase PWM inverter with less switching part than conventional multi-level inverters and reactive power control possible. In order to understand the new multi-level inverter, topology analysis and switching patterns and modes according to the current loop are described in this paper. The proposed multi-level inverter topology is validated through PSIM simulation and the experimental results are provided from a prototype.

• 시스템엔지니어링학술지
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• 제12권2호
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• pp.9-18
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• 2016

Machine switch type control panel is widely used for machine tools in Korea. They, however, have some difficulties in identifying the current operating status of machine tools especially when exposed to cutting oil. And also they have quality problems of operating failures. A new capacitor touch type machine control panel is developed and its reliability is predicted. MIL-HDBK-217F and Teclordia SR-332 are used for its reliability prediction and the prediction results are compared.

• 전력전자학회논문지
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• 제17권3호
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• pp.266-273
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• 2012

In this paper, the new open fault detection and tolerant operation method for 3 phase PWM rectifier is proposed. When open fault occurred on the inverter switches of 3 Phase PWM rectifier, the DC link voltage ripple is increased because the input current of the faulty phase is distorted. In this case, the quality of electric power would decrease, and the life time of DC link capacitor is decreased. The open fault is detected by a simple MRAS(Model Reference Adaptive System) without additional hardware sensors, and the tolerant operation carried out by turning on the opposite switch of the faulty switch without any redundancy. By the proposed method, the faulty phase input current can be controlled, so that 3-phase input current is balanced relatively under the faulty condition and the voltage ripple of DC link output is reduced. The validity of the proposed technique is proved on the 6kW 3-phase PWM rectifier system by simulation and experiment.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.541-544
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• 2002

In this study, a new LTCC material using $ZnWO_4$-LiF system was attempted with respect to use as a capacitor layer in Front-End Module. Pure $ZnWO_4$ must be sintered above $1050^{\circ}C$ in order to obtain up to 98% of full density. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 15.5, 74380GHz, and $-70ppm/^{\circ}C$, respectively. LiF addition resulted in an liquid phase formation at $810^{\circ}C$ due to interaction between $ZnWO_4$ and LiF. Therefore $ZnWO_4$ with 0.5~1.5wt% LiF could be densified at $850^{\circ}C$. Addition of LiF slightly lowered the dielectric constant from 15.5 to 14.2~15. In the given LiF addition range, the sintering shrinkage increased with increasing LiF content. $Q{\times}fo$ value, however, decreased with increasing LiF content(or increasing densification). This is originated from the interaction between the liquid phase and $ZnWO_4$ and inhomogeneity of grain morphology.

• 전력전자학회논문지
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• 제25권4호
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• pp.319-328
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• 2020

The recent use of distributed power generation systems constructed with DC-DC converters has become extremely popular owing to the rising need for environment friendly energy generation power systems. In this study, a new single-phase five-level inverter for off-grid applications constructed with a multilevel DC-DC step-up converter is proposed to boost a low-level DC voltage (36 V-64 V) to a high-level DC bus (380 V) and invert and connect them with a single-phase 230 V rms AC load. Compared with other traditional multilevel inverters, the proposed five-level inverter has a reduced number of switching devices, can generate high-quality power with lower THD values, and has balanced voltage stress for DC capacitors. Moreover, the proposed topology does not require multiple DC sources. Finally, the performance of the proposed topology is presented through the simulation and experimental results of a 400 W hardware prototype.

• 한국전자파학회논문지
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• 제16권1호
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• pp.56-65
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• 2005

이 논문은 군 쉘터(shelter)내부의 전자기기용 전원부에 사용되는 고성능 전원용 광대역 EMI 필터를 제안하였다. 주파수 10 kHz~l GHz의 광대역에서 감쇠량 100 dB를 구현할 수 있는 최적의 EMI 필터를 구현하기 위해 먼저 시뮬레이션을 통해 각 소자의 용량에 대한 특성을 분석하였으며, 이를 기초로 실제 제작을 통해 실험적으로 노이즈 제거 성능을 증명하였다. 이 결과는 군용 쉘터뿐만 아니라 다른 첨단 무기들에 대한 전자파 대응 방호기술의 개발에 도움을 줄 것이다.