• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.04a
• /
• pp.183-187
• /
• 1997

The Thin films were obtained by plasma polymerization of phenyl isothiocyanate. Polymerizations were carried out in rf(13.56 [MHz]) glow discharge generated in an inter-electrode capacitively coupled gas flow system. It was fecund that this monomer produces uniform films with a wide range of thicknesses, from hundreds of nanometers to tens of micrometers. The deposition rate appeared to be dependent on the substrate distance from the monomer inlet. The IR data revealed significant decrease in -NCS groups content in the polymer as compared with the monomer spectrum and indicated for the appearance of new absorption bands corresponding to the -CN and C-H aliphatic groups. The soluble fraction by GC was found to be composed of numerous low molecular-weight compounds.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.2 no.4
• /
• pp.199-202
• /
• 2007

In this paper, we examined the operating principle of a passive tag antenna for RFID system in UHF band. Based on the study, we proposed a novel RFID tag antenna which adopts the inductively coupled feeding structure to match antenna impedance to a capacitively loaded commercial tag chip. The proposed tag antenna consists of microstrip lines on a thin PET substrate for low-cost fabrication. The detail structure of the tag antenna were optimized using a full electromagnetic wave simulator of IE3D in conjunction with a Pareto genetic algorithm, and the size of the tag antenna can be reduced up to kr=0.27(2 cm2). We built some sample antennas and measured the antenna characteristics such as a return loss, an efficiency, and radiation patterns. The readable range of the tag antenna with a commercial RFID system showed about 1 to 3 m.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07b
• /
• pp.857-860
• /
• 2003

Tin doped indium oxide(ITO) and Al doped zinc oxide(ZnO:Al) films, which are widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The electrical and optical properties of both the ITO and ZnO:Al thin films were investigated as functions of substrate temperature, working gas pressure and deposition time. ITO and ZnO:Al films with the the present experimental conditions of temperature and pressure showed resistivity of $2.36{\times}10^{-4}{\Omega}-cm,\;9.42{\times}10^{-4}{\Omega}-cm$ and transmittance of 86.28%, 90.88% in the wavelength range of the visible spectrum, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.969-972
• /
• 2004

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. In this paper the effect of doping amounts of $Al_2O_3$ on the electrical, optical and morphological properties were investigated experimentally, The results show that the structural and electrical properties of the film are highly affected by the doping. The optimum growth conditions were obtained for films doped with 2 wt% of Al203 which exhibit a resistivity of $8.5{\times}10^{-4}{\Omega}-cm$ associated with a transmittance of 91.7 % for 840 nm in film thickness in the wavelength range of the visible spectrum.

• Proceedings of the KIEE Conference
• /
• 2008.07a
• /
• pp.1262-1263
• /
• 2008

Recently film-typed dye sensitized solar cell(DSC) attracts much attention with increasing applications for its flexibility and transparency. The ZnO:Al thin film, which serves mainly as transparent conducting electrode, Aluminium-doped zinc oxide(ZnO:Al) thin film has emerged as one of the most promising transparent conducting films since it is inexpensive, mechanically stable, and highly resistant to deoxidation. In this paper ZnO:Al thin film was deposited on the polyethylene terephthalate(PET) substrate by the capacitively coupled r. f. magnetron sputtering method. The effects of gas pressure and r. f. discharge power on the morphological, electrical and optical properties of ZnO:Al thin film were studied. Especially the variation in substrate thickness after sputtering and surface morphology of the substrate were investigated and clarified. The results showed that the film deposited on the PET substrate at r. f. discharge power of 180 W showed the minimum resistivity of about $1.5{\times}10^{-3}{\Omega}-cm$ and a transmittance of about 93%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07a
• /
• pp.143-146
• /
• 2003

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure and discharge power on the electrical, optical and morphological properties were investigated experimentally. The consideration on the effect of doping amounts of Al on the electrical and optical properties of ZnO thin film were also carried out. ZnO:Al films with the optimum growth conditions showed resistivity of $9.42{\times}10^{-4}\;{\Omeg}-cm$ and transmittance of 90.88% for 840nm in film thickness in the wavelength range of the visible spectrum.

• Journal of Sensor Science and Technology
• /
• v.26 no.5
• /
• pp.342-347
• /
• 2017

We present a precision instrument amplifier (IA) designed for bio-potential acquisition. The proposed IA employs a capacitively coupled instrument amplifier (CCIA) structure to achieve a rail-to-rail input common-mode range and low gain error. A positive feedback loop is applied to boost the input impedance. Also, DC servo loop (DSL) with pseudo resistors is adopted to suppress electrode offset for bio-potential sensing. The proposed amplifier was designed in a $0.18{\mu}m$ CMOS technology with 1.8V supply voltage. Simulation results show the integrated noise of $1.276{\mu}Vrms$ in a frequency range from 0.01 Hz to 1 KHz, 65dB SNR, 118dB CMRR, and $58M{\Omega}$ input impedance respectively. The total current of IA is $38{\mu}A$. It occupies $740{\mu}m$ by $1300{\mu}m$ including the passive on-chip low pass filter.

• Proceedings of the KIEE Conference
• /
• 1997.07d
• /
• pp.1540-1542
• /
• 1997

Plasma polymerized thin films were fabricated by interelectrode capacitively coupled type apparatus. FT-IR analyses indicated that the thin film spectra are composed not only of the corresponding monomer bands but also of several new bands. Relative dielectric constant and dielectric loss tangent of thin films fabricated in the discharge power of 90[W] showed $3.212{\sim}3.805$ and $0.0026{\sim}0.0451$ in alternating frequency of $10^3{\sim}10^6$[Hz]. Contact angle measurement indicated that cross-link of the films is increased with the discharge power.

• Proceedings of the KIEE Conference
• /
• 1997.07d
• /
• pp.1555-1559
• /
• 1997

The thin films were obtained by plasma polymerization of phenyl isothiocyanate. Polymerizations were carried out in rf(13.56[MHz]) glow discharge generated in an inter-electrode capacitively coupled gas flow system. It was found that this monomer produces uniform films with a wide range of thicknesses, from hundreds of nanometers to tens of micrometers. The deposition rate appeared to be dependent on the substrate distance from the monomer inlet. The IR data revealed significant decrease in -NCS groups content in the polymer as compared with the monomer spectrum and indicated for the appearance of new absorption bands corresponding to the -CN and C-H aliphatic groups. The soluble fraction by GC was found to be composed of numerous low molecular-weight compounds.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.22 no.1
• /
• pp.33-39
• /
• 2008

From a CCRF-excited zinc vapour laser with overlapped DC-discharge were emitted following 6 laser lines: two blue at 491.162[nm] and 492.403[nm], an orange at 589.433[nm] and three infrared lines at 747.879[nm], 758.848[nm] and 773.25[nm]. The discharge parameters were determined for an optimal laser operation. At a RF-power of 400[W] with the frequency 13.56[MHz] the optimal temperature of the oven lay between 780[K] and 800[K], the He-pressure between 3.5[kPa] and 5.5[kPa].