• 제목/요약/키워드: Capacitive switch

검색결과 51건 처리시간 0.024초

펄스 대전류 Rotary Arc Gap 스위치 개발 (A Development of the Rotary Arc Gap Switch for Pulsed High Current Transfer)

  • 조주현;이홍식;임근희
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 하계학술대회 논문집 E
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    • pp.2239-2241
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    • 1999
  • The most important question is how to use which kind of switch in pulsed power generation. There are many kinds of commercial closing switches, which have advantages and disadvantages. The most popular closing switch is the spark gap, but it has a disadvantage in life time, because of erosion of electrodes by arc heating. The Rotary Arc Gap (RAG) switch, especially Walkie-Edgar type RAG switch, was proposed to solve such problems in spark gap. It has a simple and special structure for arc moving caused from self-induced electromagnetic force, because moving arc makes less erosion on the electrodes. In this study we have made an Walkie-Edgar type RAG switch, tested the switching with capacitive energy storage system, and measured rotating arc speed in different peak current.

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빗살전극형 정전용량형 습도센서와 그 신호처리회로의 설계 제작 (The Design and fabrication of Capacitive Humidity Sensor Having Interdigital Electrodes and Its Signal Processing Circuit)

  • 강정호;이재용;김우현
    • 전기학회논문지P
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    • 제55권1호
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    • pp.26-30
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    • 2006
  • For the purpose of developing capacitive humidity sensor having interdigital electrodes, interdigital electrode was modeled and simulated to obtain capacitance and sensitivity as a function of geometric parameters like the structural gap and thickness. For the development of ASIC, switched capacitor signal processing circuits for capacitive humidity sensor were designed and simulated by Cadence using $0.25{\mu}m$ CMOS process parameters. The signal processing circuits are composed of amplifier for voltage gain control, and clock generator for sensor driving and switch control. The characteristics of the fabricated sensors are; 1) sensitivity is 9fF/%R.H., 2) temperature coefficient of offset(TCO) is $0.4%R.H./^{\circ}C$, 3) nonlinearity is 1.2%FS, 4) hysteresis is 1.5%FS in humidity range of $3%R.H.{\sim}98%R.H.$. The response time is 50 seconds in adsorption and 70 seconds in desorption. Fabricated process used in this capacitive humidity sensor having interdigital electrode are just as similar as conventional IC process technology. Therefore this can be easily mass produced with low cost, simple circuit and utilized in many applications for both industrial and environmental measurement and control system, such as monitoring system of environment, automobile, displayer, IC process room, and laboratory etc.

빗살형 전극을 가지는 정전용량형 습도센서와 그 신호처리회로의 설계와 제작 (The Design and Fabrication of Capacitive Humidity Sensor Having Interdigit Electrodes and its Signal Conditional Circuitry)

  • 박세광;강정호;박진수
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제50권3호
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    • pp.144-148
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    • 2001
  • For the purpose of developing capacitive humidity sensor having interdigit electrodes, interdigit electrode was modeled and simulated to obtain capacitance and sensitivity as a function of geometric parameters like the structural gap and thichness. For the development of ASIC, switched capacitor signal conditioning circuits for capacitive humidity sensor were designed and simulated by cadence using 0.25um CMOS process parameters. The signal conditioning circuits are composed of amplifier for voltage gain control, and clock generator for sensor driving and switch control The characteristics of the fabricated sensors are; 1) sensitivity is 9fF/%R.H., 2) temperature coefficient of offset(TCO) is 0.4%R.H./$^{\circ}C$, 3) nonlinearity is 1.2%FS, 4) hysteresis is 1.5%FS in humidity range of 3%R.H. ${\sim}$ 98%R.H.. The response time is 50 seconds in adsorption and 70 seconds in desorption. Fabricated process used in this capacitive humidity sensor having interdigit electrode are just as similar as conventional IC process technology. Therefore this can be easily mass produced with low cost, simple circuit and utilized in many applications for both industrial and environmental measurement and control system, such as monitoring system of environment, automobile, displayer, IC process room, and laboratory etc..

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가스절연개폐기에서 용량성 전압프로브를 이용한 부분방전 측정 (Partial Discharge Measurement by a Capacitive Voltage Probe in a Gas Insulated Switch)

  • 최수연;박찬용;박대원;김일권;길경석
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.476-477
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    • 2007
  • This paper described the partial discharge (PD) measurement techniques for diagnosing gas-insulated switches in overhead power distribution system. A capacitive voltage probe to detect PD pulse was designed and fixed on the surface of a bushing. We also designed a coupling network to attenuate AC voltage by 270 dB, and a low-noise amplifier having the gain of 40 dB and 500 kHz~20 MHz 3 dB. From the calibration, it was calculated that the sensitivity of the measurement system was 0.94mV/pC. In the application experiment, we could measure a PD pulse of 45 pC.

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새로운 저항성 누전전류 측정 방법 (A New Method for Resistive Leakage Current Measurement)

  • 함승진;한송엽;고창섭
    • 전기학회논문지
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    • 제56권8호
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    • pp.1397-1404
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    • 2007
  • It is important to measure the resistive component separately from the total leakage current at power distribution line. It is because electric disasters such as electric shock and fire are caused mainly by the resistive component of the total leakage current. In this paper, a new theory for measuring the resistive component separately from the total leakage current is suggested, and is embodied to an actual circuit using operational amplifiers, analog switch and R-C low pass filter. Through experiments for various cases containing both the resistive and capacitive leakage currents, the suggested algorithm is confirmed to be able to measure the resistive leakage current within 4.1% of error even when the capacitive leakage current is much bigger than the resistive one. The suggested method is expected to lower the total cost because it can be realized using simple and cheap devices, and implies the measuring time can be possibly reduced because the resistive leakage current is computed exactly from the signals during only a half period of power voltage.

Study on User Interface for a Capacitive-Sensor Based Smart Device

  • Jung, Sun-IL;Kim, Young-Chul
    • 스마트미디어저널
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    • 제8권3호
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    • pp.47-52
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    • 2019
  • In this paper, we designed HW / SW interfaces for processing the signals of capacitive sensors like Electric Potential Sensor (EPS) to detect the surrounding electric field disturbance as feature signals in motion recognition systems. We implemented a smart light control system with those interfaces. In the system, the on/off switch and brightness adjustment are controlled by hand gestures using the designed and fabricated interface circuits. PWM (Pulse Width Modulation) signals of the controller with a driver IC are used to drive the LED and to control the brightness and on/off operation. Using the hand-gesture signals obtained through EPS sensors and the interface HW/SW, we can not only construct a gesture instructing system but also accomplish the faster recognition speed by developing dedicated interface hardware including control circuitry. Finally, using the proposed hand-gesture recognition and signal processing methods, the light control module was also designed and implemented. The experimental result shows that the smart light control system can control the LED module properly by accurate motion detection and gesture classification.

Computation of Beam Stress and RF Performance of a Thin Film Based Q-Band Optimized RF MEMS Switch

  • Singh, Tejinder
    • Transactions on Electrical and Electronic Materials
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    • 제16권4호
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    • pp.173-178
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    • 2015
  • In lieu of the excellent radio frequency (RF) performance of microelectromechanical system ( MEMS) switches, these micro switches need higher actuation voltage for their operation. This requirement is secondary to concerns over the swtiches’ reliability. This paper reports high reliability operation of RF MEMS switches with low voltage requirements. The proposed switch is optimised to perform in the Q-band, which results in actuation voltage of just 16.4 V. The mechanical stress gradient in the thin micro membrane is computed by simulating von Mises stress in a multi-physics environment that results in 90.4 MPa stress. The computed spring constant for the membrane is 3.02 N/m. The switch results in excellent RF performance with simulated isolation of above 38 dB, insertion loss of less than 0.35 dB and return loss of above 30 dB in the Q-band.

전차단 상태에서 동작하는 안테나 튜닝스위치의 RF 보호기술 (RF protection technique of antenna tuning switch in all-off condition)

  • Jhon, Heesauk;Lee, Sanghun
    • 한국정보통신학회논문지
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    • 제26권10호
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    • pp.1567-1570
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    • 2022
  • This paper, we presents a RF protection technique of antenna switch by improving the power handling capability in worst case environment mode for mobile phone applications without critical payment of circuit performances such as insertion loss, isolation and ACBV (AC breakdown voltage). By applying a additional capacitive path located in front of the antenna in cell-phone, it performs the effective reduction of input power in high voltage standing wave ratio (VSWR) condition. Under the all-path off condition which causes a high VSWR, it achieved 37.7dBm power handling level as high as 5.7dB compared to that of conventional one at 2GHz. In addition, insertion loss and isolation performances were 0.31dB and 42.72dB at 2 GHz, respectively which were almost similar to that of the conventional circuit. The proposed antenna switch was fabricated in 130nm CMOS SOI technology.

Stress Analysis Using Finite Element Modeling of a Novel RF Microelectromechanical System Shunt Switch Designed on Quartz Substrate for Low-voltage Applications

  • Singh, Tejinder;Khaira, Navjot K.;Sengar, Jitendra S.
    • Transactions on Electrical and Electronic Materials
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    • 제14권5호
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    • pp.225-230
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    • 2013
  • This paper presents a novel shunt radio frequency microelectromechanical system switch on a quartz substrate with stiff ribs around the membrane. The buckling effects in the switch membrane and stiction problem are the primary concerns with RF MEMS switches. These effects can be reduced by the proposed design approach due to the stiffness of the ribs around the membrane. A lower mass of the beam and a reduction in the squeeze film damping is achieved due to the slots and holes in the membrane, which further aid in attaining high switching speeds. The proposed switch is optimized to operate in the k-band, which results in a high isolation of -40 dB and low insertion loss of -0.047 dB at 21 GHz, with a low actuation voltage of only 14.6 V needed for the operation the switch. The membrane does not bend with this membrane design approach. Finite element modeling is used to analyze the stress and pull-in voltage.

진공 스위치를 이용한 Crowbar 시스템의 개발 (Development of the Crowbar System Using a Vacuum Switch)

  • 이태호;허창수;이홍식
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제51권12호
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    • pp.584-590
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    • 2002
  • Crowbar system is usually applied to a pulsed power system in which a capacitor bank is discharged into a load. This provides a free wheeling path for the load current and prevents the capacitor from recharging due to a reverse voltage. Usually diodes have been used as a crowbar switch, but it is not a practical system because the cost of the diodes goes up enormously with increasing the system voltage and current. This paper presents a novel protection scheme of a charging and discharging system of a 300 kJ capacitor bank using a low-cost crowbar system which consists of a crowbar switch and resistors. Triggered vacuum switch(TVS) was used for a crowbar switch, and Rogowski coil was used to determine a trigger time of TVS. When this crowbar system is applied to our pulsed power system which consists of capacitor bank($123muF$), inductor() for forming a pulse, load resistor$(100 m\Omega)$, and a closing switch, instantaneous reversal voltage of capacitor bank could be limited less than 1.8 ㎸ until capacitor bank was charred to 17 ㎸.