• 한국생산제조학회지
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• 제21권4호
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• pp.556-562
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• 2012

Micro electrical discharge machining (${\mu}EDM$) has been used for non-conventional material removal. One drawback of ${\mu}EDM$ is low productivity. In this study, we tried to find the optimal machining conditions to manufacture the micro hole with an optimal machining time without loss of accuracy. Taguchi method was used to figure out the relation between machining parameters and characteristics of the process. It was found that the electrode wear, the entrance and exit clearance gave a significant effect on the diameter of the micro hole when the diameter of the electrode was identical. Grey relational analysis was used to determine the optimal machining condition for minimum machining time without loss of accuracy. The obtained optimal machining condition was the input voltage of 80V, the capacitance of 680pF, the resistance of $500{\Omega}$, the feed rate of $1.5{\mu}m$/s and the spindle speed of 2900rpm. The machining time was reduced to 48% without loss of accuracy under the optimal machining condition.

• 한국세라믹학회지
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• 제32권11호
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• pp.1262-1268
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• 1995

Photoelectrochemical properties of p-GaAs electrode have been investigated. I-V characteristic shows that the cathodic photocurrent is observed at -0.7 V vs. SCE. The photoresponse at near 870~880nm wavelength indicates that the photogenerated carriers contibuted to the observed current. The maximum converson efficiency of 35% is obtained for a Xe lamp light source at 400nm. In C-V relation, capacitance peaks appeared at the frequencies of 100Hz and 300Hz due to the activation of the interfacial states which exist at the energy level corresponding to the one-third of the GaAs band gap. The difference of about 1.1V between flatband potential (Vfb) from the Mott-Schottky method and onset voltage from I-V curve is observed due to the trap of carriers at the interfacial states in the boundary between GaAs and electrolyte. In case of WO3 deposited p-GaAs electrode, higher positive onset current and photocurent density are obtained. This can be explained by the fact that carriers are generated by light penetrated into the WO3 thin flm as well as p-GaAs substrate and then move into the electrolyte effectively.

• JSTS:Journal of Semiconductor Technology and Science
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• 제2권1호
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• pp.59-69
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• 2002

A semi-analytical model based on exact numerical analysis of the 2DEG channel in pseudo-morphic HEMT (PMHEMT) is presented. The exactness of the model stems from solving both Schrodinger's wave equation and Poisson's equation simultaneously and self-consistently. The analytical modeling of the device terminal characteristics in relation to the charge control model has allowed a best fit with the geometrical and structural parameters of the device. The numerically obtained data for the charge control of the channel are best fitted to analytical expressions which render the problem analytical. The obtained good agreement between experimental and modeled current/voltage characteristics and small signal parameters has confirmed the validity of the model over a wide range of biasing voltages. The model has been used to compare both the performance and characteristics of a PMHEMT with a competetive HEMT. The comparison between the two devices has been made in terms of 2DEG density, transfer characteristics, transconductance, gate capacitance and unity current gain cut-off frequency. The results show that PMHEMT outperforms the conventional HEMT in all considered parameters.

• 한국재료학회지
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• 제1권3호
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• pp.125-131
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• 1991

pMOS소자의 $p^{+}$게이트 전극으로 다결정실리콘과 비정질실리콘을 사용하여 고온의 열처리 공정에 따른 붕소이온의 침투현상을 high frequency C-V plot, Constant Current Stress Test(CCST), Secondary Ion Mass Spectroscopy(SIMS) 및 Transmission Electron Microscopy(TEM)를 이용하여 비교하였다. C-V plot분석 결과 비정질실리콘 게이트가 다결정실리콘 게이트에 비해 flatband전압의 변화가 작게 나타났으며, 게이트 산화막의 절연파괴 전하밀도에서는 60~80% 정도 향상된 값을 나타내었다. 비정질실리콘 게이트는 증착시 비정질로 형성되는 구조로 인한 얇은 이온주입 깊이와 열처리 공정시 다결정실리콘에 비교하여 크게 성장하는 입자 크기 때문에 붕소이온의 침투 경로가 되는 grain boundary를 감소시켜 붕소이온 확산을 억제한 것으로 생각된다. Electron trapping rate와 flatband 전압 변화와의 관계에 대하여 고찰하였다.

• 전자공학회논문지
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• 제53권6호
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• pp.155-166
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• 2016

전자유도 가열시설에서 정밀하고 일정한 주파수 성분에 의해 가열물체에 발열을 유도하려면 LC공진회로 설계단계에서 출력 주파수에 대한 커패시터의 정전용량(C)과 워크코일의 유도계수(L) 설정이 중요하다. 하지만 고유의 발열계수를 가진 물체의 가열위치와 범위에 직접유도를 하는 워크코일은 고정적으로 설계되는 반면 커패시터는 가변되도록 설계되어야만 전체장비의 활용도가 높아진다. 본 논문에서는 $1000V_{MAX}$ 최대전압과 $200I_{MAX}$ 전류에서 최대 700kHz의 고주파 LC공진 출력이 되도록 커패시터 내부구성 원자재 선정 및 공정설계 단계까지 단일전극 용량별 샘플을 추출하였다. 그리고 정전용량 규격변화에 따라 주파수 변화특성과 출력 파라메타 결과를 바탕으로 HF-LC공진용 전도냉각 커패시터의 최적설계를 위한 관계를 증명하는 기초 실험결과를 제시하였다.