• Journal of Biomedical Engineering Research
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• v.33 no.4
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• pp.202-206
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• 2012

In this study, we developed transdermal direct drug delivery device using micro-needle painlessly. We has fabricated micro-needle that is 130 ${\mu}m$ thickness and 250 ${\mu}m$length with 10 ${\mu}m$ spiral groove for rolling down drug. Head part of micro-needle device is composed of 20ea micro-needles, an on-off valve and a protective cap. Glass bottle for containing drug is connected to head part of micro-needle device. We examined the puncture characteristic testing using porcine skin and drug delivery testing using porcine, rat skin with Indian Ink.

• International Journal of Internet, Broadcasting and Communication
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• v.12 no.2
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• pp.30-36
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• 2020

We demonstrated a successful fabrication of 4" Gallium Nitride (GaN)/Diamond High Electron Mobility Transistors (HEMTs) incorporated with Inner Slot Via Hole process. We made in manufacturing technology of 4" GaN/Diamond HEMT wafers in a compound semiconductor foundry since reported [1]. Wafer thickness uniformity and wafer flatness of starting GaN/Diamond wafers have improved greatly, which contributed to improved processing yield. By optimizing Laser drilling techniques, we successfully demonstrated a through-substrate-via process, which is last hurdle in GaN/Diamond manufacturing technology. To fully exploit Diamond's superior thermal property for GaN HEMT devices, we include Aluminum Nitride (AlN) barrier in epitaxial layer structure, in addition to conventional Aluminum Gallium Nitride (AlGaN) barrier layer. The current collapse revealed very stable up to Vds = 90 V. The trapping behaviors were measured Emission Microscope (EMMI). The traps are located in interface between Silicon Nitride (SiN) passivation layer and GaN cap layer.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.9
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• pp.104-113
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• 1994

We have fabricated n-p-n HBTs using 3-inchAlgaAs/GaAs hetero structure epi-wafers grown by MBE. DC and AC characteristics of HBT devices were measured and analyzed. For HBT epi-structure, Al composition of emitter was graded in the region between emitter cap and emitter. And base layer was designed with concentration of 1${\times}10^{19}/cm^{3}$ and thickness of 50nm, and Be was used as the p-type dopant. Principal processes for device fabrication consist of photolithography using i-line stepper, wet mesa etching, and lift-off of each ohmic metal. The PECVD SiN film was used as the inslator for the metal interconnection. HBT device with emitter size of 3${\times}10{\mu}m^{2}$ resulted in cut-off frequency of 35GHz, maximum oscillation frequency of 21GHz, and current gain of 60. The distribution of the ideality factor of collector and base current was very uniform, and the average values of off-set voltage and current was very uniform, and the average values of off-set voltage and current gain were 0.32V and 32 within a 3-inch wafer.

• The Journal of the Acoustical Society of Korea
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• v.24 no.3E
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• pp.90-98
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• 2005

Enhanced approach using computational and experimental method is proposed and performed to describe very well the behavior of loudspeaker than conventional method. Proposed procedure is composed of four parts. First, Thiele-Small parameters for test loudspeaker are identified by an electrical impedance method like as a delta mass method. Second part includes the processes to measure physical properties. Physical data like masses and thicknesses of loudspeaker's components are measured by an electrical precision scale and a digital vernier caliper. Third, the identified Thiele-Small parameters are proposed to be used as load boundary conditions for vibration analysis instead of electromagnetic circuit analysis to get a driving force upon bobbin part. Also, these parameters and physical data are used to modify physical properties required for computation to accommodate simulated sound pressure level with measured one for loudspeaker enclosure system. These data like as Young's modulus and thickness for a diaphragm are required for vibration analysis of loudspeaker but not measured accurately. Finally, it was investigated that simulated sound pressure level with full acoustic modeling including an acoustic port for test loudspeaker agreed with experimental result very well in the midrange frequency band(from 100 Hz to 2,000 Hz). In addition, several design parametric study is performed to grasp acoustical behaviors of loudspeaker system due to variations of diaphragm thicknesses and shapes of dust cap.

• Korean Journal of Microbiology
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• v.52 no.2
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• pp.226-229
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• 2016

The growth of two different fungal species, human pathogenic Cryptococcus neoformans and plant pathogenic Alternaria alternata were inhibited by a chitinase (Chi2) expressed in the autolysing tissue of Coprinellus congregatus. The cell wall thickness was reduced (up to 32%) in C. neoformans compared with that of normal cell, and polysaccharide fibers located outside of the cell wall were also severely removed. The hyphal growth of A. alternata on agar plate was stopped by the enzyme. The allergic inflammation induced by A. alternata was reduced by the enzyme reaction when compared with untreated control in a mouse model.

• Current Applied Physics
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• v.18 no.12
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• pp.1486-1491
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• 2018

In recent years, mica has been successfully used as a substrate for the growth of flexible epitaxial ferroelectric oxide thin films. Here, we systematically investigated the flexibility of mica in terms of its thickness, repeated bending/unbending, extremely hot/cold conditions, and successive thermal cycling. A $20-{\mu}m-thick$ sheet of mica is flexible even up to the bending radius of 5 mm, and it is durable for 20,000 cycles of up- and down-bending. In addition, the mica shows flexibility at 10 and 773 K, and thermal cycling stability for the temperature variation of ca. 400 K. Compared with the widely used flexible polyimide, mica has a significantly higher Young's modulus (ca. 5.4 GPa) and negligible hysteresis in the force-displacement curve. These results show that mica should be a suitable substrate for piezoelectric energy-harvesting applications of ferroelectric oxide thin films at extremely low and high temperatures.

• Steel and Composite Structures
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• v.44 no.3
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• pp.339-351
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• 2022

A mortar-filled rectangular hollow structural section (RHS) can increase a structural section property as well as a compressive buckling capacity of a RHS member. In this study, the tensile performance of newly developed mortar-filled RHS members was experimentally evaluated with various connection details. The major test parameters were the type of end connections, the thickness of cap plates and shear plates, the use of stud bolts, and penetrating bars. The test results showed that the welded T-end connection experienced a brittle weld fracture at the welded connection, whereas the tensile performance of the T-end connection was improved by additional stud bolts inserted into the mortar within the RHS tube. For the end connection using shear plates and penetrating stud bolts, ductile behavior of the RHS tube was achieved after yielding. The penetrating bars increased load carrying capacity of the RHS. Based on the analysis of the load transfer mechanism, the current design code and test results were compared to evaluate the tensile capacity of the RHS tube according to the connection details. Design considerations for the connections of the mortar-filled RHS tubes were also recommended.

• Korean Journal of Plant Taxonomy
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• v.42 no.4
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• pp.260-266
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• 2012

Because the embryological features of Jeffersonia dubia are poorly understood, we conducted the first embryological study comparing it to other related genera of Berberidaceae. Important embryological features of J. dubia are as follows: the anther is tetrasporangiate, anther wall formation confirms basic type, glandular tapetum cells are two nucleate, the epidermis persistent, and the endothecium develops fibrous thickenings, anther dehiscence by two valves, meiosis in a microspore mother cell is accompanied by simultaneous cytokinesis, microspore tetrads are usually tetrahedral, pollen grains two cells at the time of anthesis. The ovule is bitegmic, anatropous and crassinucellate, archesporium single celled, development of the embryo sac Polygonum type, a mature embryo sac is ellipsoidal in shape. Endosperm formation is of Nuclear type and embryogeny Onagrad type. Seeds are arillate and seed coat exotestal type. Embryological comparisons showed that Jeffersonia resemble to Epimedium and Vancouveria rather than Berberis and Mahonia in some features, like as number of tapetal cells, cytokinesis in meiosis, and thickness of exotesta. It also resembles to Gymnospermium in mode of anther wall formation, number of tapetal cells, formation of nucellar cap, and nature of antipodal cells. Nevertheless, Jeffersonia and Gymnospermium differ from several other embryological features and molecular data too. Therefore, embryological evidences support that Jeffersonia is closely related with Epimedium and Vancouveria.

• Journal of Life Science
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• v.27 no.2
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• pp.211-216
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• 2017

This study aims to reduce the production cost of mushrooms and therefore boost the income of mushroom producers. The addition of a 10% concentration of herb medicine refuse was adequate for promoting mycelium growth in Flammulina velutipes. A moisture content of 60% in the culture medium was adequate for promoting hyphal growth. The optimum temperature and humidity were $16^{\circ}C$ and 70%-85%, respectively. The average yield of Flammulina velutipes fruting body per 1,100 ml bottle was 275-282 g, which is similar to that of the control. The outbreak of diseases such as mildew and bacterial blotch in mushroom was never observed in the bottle treated with herb medicine refuse. Fewer deformed and second-class quality mushrooms were observed than in the control group. Deviation reduced, and mushroom growth was observed to be significantly uniform. The winter mushroom had a white fruiting body with a hemispherical shape. The diameter of the mushroom cap was 9.2-9.3 mm, stipe length was 12.7-12.8 cm, and thickness was 3.3-3.4 mm; these were almost the same as those in the control group. The partial hardness of winter mushrooms in both the experimental and the control groups showed that the stipe ($54.6-57.3g/cm^2$) is a little harder than the mushroom cap ($46.8-47.6g/cm^2$). The calories and nutrients per 100 g of mushrooms in the control and samples were similar to each other.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.293-294
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• 2011

It is known that semiconductor quantum-dot (QD) heterostructures have superior zero-dimensional quantum confinement, and they have been successfully applied to semiconductor laser diodes (QDLDs) for optical communication and infrared photodetectors (QDIPs) for thermal images [1]. The self-assembled QDs are normally formed at Stranski-Krastanov (S-K) growth mode utilizing the accumulated strain due to lattice-mismatch existing at heterointerfaces between QDs and cap layers. In order to increase the areal density and the number of stacks of QDs, recently, sub-monolayer (SML)-thick QDs (SQDs) with reduced strain were tried by equivalent thicknesses thinner than a wetting layer (WL) existing in conventional QDs (CQDs) by S-K mode. Despite that it is very different from CQDs with a well-defined WL, the SQD structure has been successfully applied to QDIP[2]. In this study, optical characteristics are investigated by using photoluminescence (PL) spectra taken from self-assembled InAs/GaAs QDs whose coverage are changing from submonolayer to a few monolayers. The QD structures were grown by using molecular beam epitaxy (MBE) on semi-insulating GaAs (100) substrates, and formed at a substrate temperature of 480$^{\circ}C$ followed by covering GaAs cap layer at 590$^{\circ}C$. We prepared six 10-period-stacked QD samples with different InAs coverages and thicknesses of GaAs spacer layers. In the QD coverage below WL thickness (~1.7 ML), the majority of SQDs with no WL coexisted with a small amount of CQDs with a WL, and multi-peak spectra changed to a single peak profile. A transition from SQDs to CQDs was found before and after a WL formation, and the sublevel of SQDs peaking at (1.32${\pm}$0.1) eV was much closer to the GaAs bandedge than that of CQDs (~1.2 eV). These revealed that QDs with no WL could be formed by near-ML coverage in InAs/GaAs system, and single-mode SQDs could be achieved by 1.5 ML just below WL that a strain field was entirely uniform.