• Title/Summary/Keyword: Calibrated Atomic Force Microscope

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Two Dimensional Atomic Force Microscope (서브나노급 정밀도의 2 차원 원자현미경 개발)

  • Lee, Dong-Yeon;Gweon, Dae-Gab
    • Proceedings of the KSME Conference
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    • 2008.11a
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    • pp.1778-1783
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    • 2008
  • A compact and two-dimensional atomic force microscope (AFM) using an orthogonal sample scanner, a calibrated homodyne laser interferometer and a commercial AFM head was developed for use in the nanometrology field. The x and y position of the sample with respect to the tip are acquired by using the laser interferometer in the open-loop state, when each z data point of the AFM head is taken. The sample scanner which has a motion amplifying mechanism was designed to move a sample up to $100{\times}100{\mu}m^2$ in orthogonal way, which means less crosstalk between axes. Moreover, the rotational errors between axes are measured to ensure the accuracy of the calibrated AFM within the full scanning range. The conventional homodyne laser interferometer was used to measure the x and y displacements of the sample and compensated via an X-ray interferometer to reduce the nonlinearity of the optical interferometer. The repeatability of the calibrated AFM was measured to sub-nm within a few hundred nm scanning range.

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Atomic Force Microscope for Standard Length Metrology (직교 스캐너와 레이저 간섭계를 사용한 교정용 원자현미경)

  • Lee, Dong-Yeon;Kim, Dong-Min;Gweon, Dae-Gab
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.30 no.12 s.255
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    • pp.1611-1617
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    • 2006
  • A compact and two-dimensional atomic force microscope (AFM) using an orthogonal sample scanner, a calibrated homodyne laser interferometer and a commercial AFM head was developed for use in the nano-metrology field. The x and y position of the sample with respect to the tip are acquired by using the laser interferometer in the open-loop state, when each z data point of the AFM head is taken. The sample scanner which has a motion amplifying mechanism was designed to move a sample up to $100{\times}100{\mu}m^2$ in orthogonal way, which means less crosstalk between axes. Moreover, the rotational errors between axes are measured to ensure the accuracy of the calibrated AFM within the full scanning range. The conventional homodyne laser interferometer was used to measure the x and y displacements of the sample and compensated via an X-ray interferometer to reduce the nonlinearity of the optical interferometer. The repeatability of the calibrated AFM was measured to sub-nm within a few hundred nm scanning range.

Measurements of Two-dimensional Gratings Using a Metrological Atomic Force Microscope and Uncertainty Evaluation (길이 표준 소급성을 갖는 원자간력 현미경을 이용한 2차원 격자 시편 측정과 불확도 평가)

  • Kim, Jong-Ahn;Kim, Jae-Wan;Kang, Chu-Shik;Eom, Tae-Bong
    • Journal of the Korean Society for Precision Engineering
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    • v.24 no.9
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    • pp.68-75
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    • 2007
  • The pitch and orthogonality of two-dimensional (2D) gratings have been measured by using a metrological atomic force microscope (MAFM) and measurement uncertainty has been analyzed. Gratings are typical standard artifacts for the calibration of precision microscopes. Since the magnification and orthogonality in two perpendicular axes of microscopes can be calibrated simultaneously using 2D gratings, it is important to certify the pitch and orthogonality of 2D gratings accurately for nano-metrology using precision microscopes. In the measurement of 2D gratings, the MAFM can be used effectively for its nanometric resolution and uncertainty, but a new measurement scheme was required to overcome some limitations of current MAFM such as nonnegligible thermal drift and slow scan speed. Two kinds of 2D gratings, each with the nominal pitch of 300 nm and 1000 nm, were measured using line scans for the pitch measurement of each direction. The expanded uncertainties (k = 2) of measured pitch values were less than 0.2 nm and 0.4 nm for each specimen, and those of measured orthogonality were less than 0.09 degree and 0.05 degree respectively. The experimental results measured using the MAFM and optical diffractometer were coincident with each other within the expanded uncertainty of the MAFM. As a future work, we also proposed another scheme for the measurements of 2D gratings to increase the accuracy of calculated peak positions.

Measurements of Two-dimensional Gratings Using a Metrological Atomic Force Microscope with Uncertainty Evaluation

  • Kim, Jong-Ahn;Kim, Jae-Wan;Kang, Chu-Shik;Eom, Tae-Bong
    • International Journal of Precision Engineering and Manufacturing
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    • v.9 no.2
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    • pp.18-22
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    • 2008
  • The pitch and orthogonality of two-dimensional (2-D) gratings were measured using a metrological atomic force microscope (MAFM), and the measurement uncertainty was analyzed. Gratings are typical standard devices for the calibration of precision microscopes, Since the magnification and orthogonality in two perpendicular axes of microscopes can be calibrated simultaneously using 2-D gratings, it is important to certify the pitch and orthogonality of such gratings accurately for nanometrology. In the measurement of 2-D gratings, the MAFM can be used effectively for its nanometric resolution and uncertainty, but a new measurement scheme is required to overcome limitations such as thermal drift and slow scan speed. Two types of 2-D gratings with nominal pitches of 300 and 1000 nm were measured using line scans to determine the pitch measurement in each direction. The expanded uncertainties (k = 2) of the measured pitch values were less than 0.2 and 0.4 nm for each specimen, and the measured orthogonality values were less than $0.09^{\circ}$ and $0.05^{\circ}$, respectively. The experimental results measured using the MAFM and optical diffractometer agreed closely within the expanded uncertainty of the MAFM. We also propose an additional scheme for measuring 2-D gratings to increase the accuracy of calculated peak positions, which will be the subject of future study.

Nano Force Metrology and Standards (나노 힘 측정 및 표준)

  • Kim M.S.;Park Y.K.;Choi J.H.;Kim J.H.;Kang D.I.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2005.10a
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    • pp.59-62
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    • 2005
  • Small force measurements ranging from 1 pN to $100{\mu}N$, we call it Nano Force, become the questions of common interests of biomechanics, nanomechanics, material researches, and so on. However, unfortunately, quantitative and accurate force measurements have not been taken so far. This is because there ,are no traceable force standards and a calibration scheme. This paper introduces a quantitative force metrology, which provides traceable link to SI (International Systems of Units). We realize SI traceable force ranging from 1 nN to $100{\mu}N$ using an electrostatic balance and disseminate it through transfer standards, which are self-sensing cantilevers that have integrated piezoresistive strain gages. We have been built a prototype electrostatic balance and Nano Force Calibrator (NFC), which is an AFM cantilever calibration system. As a first experiment, we calibrated normal spring constants of commercial AFM cantilevers using NFC. Calibration results show that the spring constants of them are quite differ from each other and nominal values provided by a manufacturer (up to 240% deviation).

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Pitch Measurement of 150 nm 1D-grating Standards Using an Nano-metrological Atomic Force Microscope

  • Jonghan Jin;Ichiko Misumi;Satoshi Gonda;Tomizo Kurosawa
    • International Journal of Precision Engineering and Manufacturing
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    • v.5 no.3
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    • pp.19-25
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    • 2004
  • Pitch measurements of 150 nm one-dimensional grating standards were carried out using a contact mode atomic force microscopy with a high resolution three-axis laser interferometer. This measurement technique was named as the 'nano-metrological AFM'. In the nano-metrological AFM, three laser interferometers were aligned precisely to the end of an AFM tip. Laser sources of the three-axis laser interferometer in the nano-metrological AFM were calibrated with an I$_2$ stabilized He-Ne laser at a wavelength of 633 nm. Therefore, the Abbe error was minimized and the result of the pitch measurement using the nano-metrological AFM could be used to directly measure the length standard. The uncertainty in the pitch measurement was estimated in accordance with the Guide to the Expression of Uncertainty in Measurement (GUM). The primary source of uncertainty in the pitch-measurements was derived from the repeatability of the pitch-measurements, and its value was about 0.186 nm. The average pitch value was 146.65 nm and the combined standard uncertainty was less than 0.262 nm. It is suggested that the metrological AFM is a useful tool for the nano-metrological standard calibration.

Scanning Kelvin Probe Microscope analysis of Nano-scale Patterning formed by Atomic Force Microscopy in Silicon Carbide (원자힘현미경을 이용한 탄화규소 미세 패터닝의 Scanning Kelvin Probe Microscopy 분석)

  • Jo, Yeong-Deuk;Bahng, Wook;Kim, Sang-Cheol;Kim, Nam-Kyun;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.32-32
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    • 2009
  • Silicon carbide (SiC) is a wide-bandgap semiconductor that has materials properties necessary for the high-power, high-frequency, high-temperature, and radiation-hard condition applications, where silicon devices cannot perform. SiC is also the only compound semiconductor material. on which a silicon oxide layer can be thermally grown, and therefore may fabrication processes used in Si-based technology can be adapted to SiC. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, we investigated that the local oxide growth on SiC under various conditions and demonstrated that an increased (up to ~100 nN) tip loading force (LF) on highly-doped SiC can lead a direct oxide growth (up to few tens of nm) on 4H-SiC. In addition, the surface potential and topography distributions of nano-scale patterned structures on SiC were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the nano-scale patterned on SiC was higher than that of original SiC surface. The results confirm the concept of the work function and the barrier heights of oxide structures/SiC structures.

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Certification of magnification standards for the establishment of meter-traceability in microscopy (현미경의 길이표준 소급성 확립을 위한 배율 교정 시편 인증)

  • Kim J.A.;Kim J.W.;Park B.C.;Eom T.B.;Kang C.S.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2005.06a
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    • pp.645-648
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    • 2005
  • Microscopy has enabled the development of many advanced technologies, and higher level microscopic techniques are required according to the increase of research in nano-technology and bio-technology fields. Therefore, in many applications, we need to measure the dimension of micro-scale parts accurately, not just to observe their shapes. To establish the meter-traceability in microscopy, gratings have been widely used as a magnification standard. KRISS provides the certification service of magnification standards using an optical diffractometer and a metrological AFM (MAFM). They are based on different measurement principles, and so can give complementary information for each other. In this paper, we describe the configuration of each system and measurement procedures to certificate grating pitch values of magnification standards. Several measurement results are presented, and the discussion about them are also given. Using the optical diffractometer, we can calibrate a grating specimen with uncertainty of less than 50 pm. The MAFM can measure a grating specimen of down to 100 nm pitch value, and the calibrated values usually have uncertainty less than 500 pm.

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