• Transactions of the Korean hydrogen and new energy society
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• v.1 no.1
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• pp.9-14
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• 1989

Mixed photocatalyst containing cadmium sulfide and zinc sulfide was prepared on silica gel powder and Nafion film. Photo-irradiation of aqueous mixture containing the photocatalysis generated hydrogen by water cleavage reaction. Use of sodium sulfide as sacrificial reagent help the photo-reaction. Evolution of the hydrogen was measured by gas chromatographic analysis. Composition of the catalyst was determined by atomic absorption spectrophotometer. 0.2 mL of of hydrogen was generated per hour. The maximun catalytic activity was obtained after 8-12 hours later. Hydrogen generation efficiency by the two different catalytic system was compared and showed that the Nafion-based catalyst is more efficient than the silicagel-based catalyst for the photoreaction.

• Bulletin of the Korean Chemical Society
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• v.31 no.4
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• pp.1091-1093
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• 2010

• Bulletin of the Korean Chemical Society
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• v.33 no.12
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• pp.4261-4264
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• 2012

• Bulletin of the Korean Chemical Society
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• v.31 no.12
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• pp.3818-3821
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• 2010

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.110-111
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• 2009

상온에서 밴드갭이 2.42 eV의 에너지를 가지며 직접 에너지 밴드갭을 갖는 고감도의 광전도체로 태양전지의 광투과 물질로 각광을 받고 있으며 광전도 cell로 연구되고 있는 CdS(Cadmium sulfide)를 용액 성장법(CBD)으로 제조하여 박막의 결정립의 향상과 박막내의 결함 등을 제거하기 위해 RTP(Rapid Thermal Process)를 이용하여 열처리 분위기 $N_2$, 처리시간 10분을 기준으로 열처리온도 ($300\;^{\circ}C$, $400\;^{\circ}C$, $500\;^{\circ}C$)를 변화시키며 박막의 전기적, 광학적 특성을 조사하였다. 캐리어 밀도가 급격히 낮아지고 이동도가 증가한 $500\;^{\circ}C$에서 $1.29\times10^3\;{\Omega} m$ 비저항을 나타냈다. 가시광선 영역에서 76.28%의 투과율을 보이는 특성을 나타내었다.

• Korean Journal of Soil Science and Fertilizer
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• v.24 no.3
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• pp.183-191
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• 1991

A study was conducted to determine the influence of soil chemical properties on the distribution and forms of cadmium (Cd), lead (Pb), copper(Cu) and Zinc(Zn) in paddy soils near zinc mines. A sequential extraction procedure was used to fractionate the heavy metals in soils into the designated from of water soluble, exchangeable, organically bound, oxide/carbonate, and sulfide/residual. The predominant form of Cd, Pb, Cu and Zn in the soils was found to be sulfide/residual form. Oxide/carbonate Cd and Pb and organically bound Cu were high, while exchangeable Pb and Cu were very low. Water soluble Cd, Pb and Cu were not detected in the soils. The percentages of the heavy metals content in exchangeable fractions were inversely correlated with those in sulfide/residual fractions in the soils. Exchangeable Cd and Zn and the oxide/carbonate Pb were shifting to the sulfide/residual form with soil depth and the chemical forms of Cu were not changed. Organically bound Cu was positively correlated with soil organic matter content but Cd, Pb and Zn were not. The percentages of Cd, Pb and Zn content in exchangeable forms decreased with soil pH, while those in oxide/carbonate and sulfide/residual forms increased with soil pH. The amounts of oxide/carbonate and sulfide/residual forms of pb were higher than those of Cd and Zn at same soil pH.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.305.2-305.2
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• 2016

Tin monosulfide (SnS) is one promising candidate absorber material which replace the current technology based on cadmium telluride (CdTe) and copper indium gallium sulfide selenide (CIGS) for its suitable optical band gap, high absorption coefficient, earth-abundant, non-toxic and cost-effective. During past years work, thin film solar cells based on SnS films had been improved to 4.36% certified efficiency. In this study, Tin monosul fide was obtained by atomic layer deposition (ALD) using the reaction of Tetrakis (dimethylamino) tin (TDMASn, [(CH3)2N]4Sn) and hydrogen sulfide (H2S) at low temperatures (100 to 200 oC). The direct optical band gap and strong optical absorption of SnS films were observed throughout the Ultraviolet visible spectroscopy (UV VIS), and the properties of SnS films were analyzed by sanning Electron Microscope (SEM) and X-Ray Diffraction (XRD).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.3
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• pp.199-205
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• 2005

Polycrystalline cadmium sulfide(CdS) thin films were deposited on glass substrate by chemical bath deposition(CBD) and vacuum evaporation (VE) techniques. VE-CdS films consisted primarily of hexagonal phase, whereas CBD CdS films containing primarily the cubic form. VE-grown films were shown to have better crystallinity than CBD-grown films. The grain size of the CBD films is smaller than the ones of VE films. VE-CdS films exhibited relatively high transmittance in the above-gap region and band gap compared with CBD films. However, CdTe solar cells with these low quality CBD-CdS layers yield higher and more stable characteristics. Current-voltage-temperature measurements showed that the current transport for both cells was controlled by both tunneling and interface recombination but the cells with CBD-CdS displayed less tunneling.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.4
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• pp.326-332
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• 2008

In this work CdS films were prepared by using chemical bath deposition, which is simple and inexpensive technique suitable for large deposition area. Annealing in air at different temperatures (300, 350, 400, 450 and $500^{\circ}C$) at constant time of 30 min, also for different times (15, 30, 45, 60 and 90 min) at constant temperature ($300^{\circ}C$) is achieved. X-Ray analysis has confirmed the formation of cadmium oxide (CdO) with slight increase in grain size, shift towards lower scattering angle due to relaxation in the tensile strain for deposition films, and structure change from cubic and hexagonal to the hexagonal. From electrical properties, significant increase in electrical conductivity appeared in samples annealed at $300^{\circ}C$ for 60 min, and at $350^{\circ}C$ for 30 min.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.31 no.9
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• pp.74-81
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• 1982

One of the stable thin film transistor fabricated by cadmium suifide with the anodized aluminium oxide as gate material. The principle of the operation for the device is based on the control mechanism of injected majority carricrs to the wide band gap semiconductor, that is cadmium sulfide, by means of the function of the gate control. The fabricated device constructed by evaporating CdS layer in the form of microcrystalline on the oxided thin film characterized by ea, 80 as voltage amplification factor, 1/100 mho as transconductance, 8 kohm as dynamic output resistance, furthermore gain band width products is about 15 MHz.