• 한국결정성장학회지
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• 제17권5호
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• pp.204-209
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• 2007

형광체-변환 3파장 백색 발광 다이오드(LED)의 응용을 위하여 일련의 $CaS_{1-x}Se_x:Eu$ 형광체를 합성하였다. $CaS_{1-x}Se_x:Eu$의 구조와 발광 특성을 조사하였다. $CaS_{1-x}Se_x:Eu$ 형광체는 청색 발광 다이오드의 발광 파장인 455nm에서 강한 흡수가 있다. $Eu^{2+}$의 $4f^65d^1(T_{2g}){\rightarrow}4f^7(^8S_{7/2})$ 전이 때문에 CaS:Eu는 651nm에서 적색 발광 봉우리를 가지고 있다. $CaS_{1-x}Se_x:Eu$의 발광 봉우리는 Se이 증가함에 따라서 651nm에서 598nm으로 이동이 된다. $CaS_{1-x}Se_x:Eu$ 형광체는 청색 LED로 여기하면 가변 파장의 적색 발광을 하는 형광체로 사용될 수 있다. $SrGa_2S_4:Eu$와 $CaS_{0.50}Se_{0.50}:Eu$ 형광체를 청색 발광 다이오드에 도포하여 백색 발광 다이오드를 제작하였다.

• Bulletin of the Korean Chemical Society
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• 제30권2호
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• pp.419-422
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• 2009

The luminescence intensity of calcium sulfide codoped with $Eu^{2+},\;Si^{4+}\;and\;Ga^{3+}$ was investigated as a function of the dopant concentration. An enhancement of the red luminescence resulted from the incorporation of $Si^{4+}\;and\;Ga^{3+}\;into\;CaS:Eu^{2+}.\;The\;non-codoped\;CaS:Eu^{2+}$ converted only 3.0% of the absorbed blue light into luminescence. As the $Si^{4+}\;and\;Ga^{3+}$ were embedded into the host lattice, the luminescence intensity increased and reached a maximum of Q = 10.0% at optimized concentrations of the codopants in CaS. Optimized CaS:$Eu^{2+},Si^{4+},Ga^{3+}$ phosphors were fabricated with blue GaN LED and the chromaticity index of the phosphor-formulated GaN LED was investigated as a function of the wt% of the optimized phosphor.

• Bulletin of the Korean Chemical Society
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• 제29권4호
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• pp.822-826
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• 2008

We report the cathodoluminescence and aging properties of a series of green phosphors of formula $Sr_{1-x}M_xGa_2S_4$:Eu (x = 0.0-1.0, M = Ba or Ca) that have potential applications in field emission displays (FEDs). The series of phosphors was synthesized via NaBr-aided solid-state reactions in a flowing $H_2S$ stream. A low level ($\sim$20%) of Ba or Ca substitution for Sr in $SrGa_2S_4$:Eu maintains the orthorhombic phase of pure $SrGa_2S_4$:Eu phosphors. Further, a low level ($\sim$20%) of Ba or Ca substitution for Sr in $SrGa_2S_4$:Eu provides various green colors and sufficient brightness for FED applications. Substitution of Ba or Ca for Sr in $SrGa_2S_4$:Eu also improved the stability of the phosphor when it was operated under electron-beam irradiation of 5 kV.

• Bulletin of the Korean Chemical Society
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• 제28권8호
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• pp.1280-1284
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• 2007

A series of Ca1-xSrxS:Eu (x = 0.0, 0.2, 0.4, 0.6, 0.8, 1.0) phosphors were synthesized by solid-state reactions. The Ca1-xSrxS:Eu phosphors have a strong absorption at 455 nm, which corresponds to the emission wavelength of a blue LED. The emission peak of Ca1-xSrxS:Eu is blue shifted from 655 to 618 nm with increasing Sr content. The characteristics of Ca1-xSrxS:Eu phosphors make them suitable for use as wavelengthtunable red-emitting phosphors for three-band white LEDs pumped by a blue LED. In support of this, we fabricated a three-band white LED by coating SrGa2S4:Eu and Ca0.6Sr0.4S:Eu phosphors onto a blue LED chip, and characterized its optical properties.

• E2M - 전기 전자와 첨단 소재
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• 제8권6호
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• pp.752-758
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• 1995

Red emitting CaS:Eu,S electroluminescent(EL) device prepared at 550.deg. C by an electron-beam evaporation technique, demonstrated luminance of 175cd/m$\^$2/ and efficiency of 0.311m/W with 3kHz drive. Luminance was increased with the increase of applied voltage and frequency. From the results of the PL spectrum and the EL spectrum, the CaS:Eu, S device showed emission peak near 640nm resulted from the transition of EU$\^$2+/ 4f$\^$6/5d.rarw.4f$\^$7/. The capacitance of the phosphor layer from the Sawyer-Tower circuit was 10.5nF/cm$\^$2/.

• 센서학회지
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• 제8권5호
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• pp.388-393
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• 1999

회토류 원소인 Eu로 활성화한 $CaSO_4:Eu$ TLD를 제작하였으며, 트랩 매개변수 등의 물리적 특성을 조사하였다. 제작한 $CaSO_4:Eu$ TLD는 활성제 Eu의 농도를 0.5 moi%로 하고, $600^{\circ}C$에서 2시간 동안 열처리하였을 때 최대의 열형광 강도를 나타내었으며, glow 곡선은 2개의 glow peak로 구성되었다. 두 glow peak를 분리하여 초기 상승법, peak 형상법, 가온율법, 최소자승법에 의한 glow 곡선의 fitting 방법 등을 사용하여 glow 곡선을 분석하였다. 두 glow peak의 활성화에너지는 각각 1.00 eV, 1.09 eV이고, 진동수인자는 각각 $7.04{\times}10^{11}\;s^{-1}$과 $5.12{\times}10^{11}\;s^{-1}$였으며, 1.11과, 1.33의 발광차수를 갖는 것으로 평가되었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1274-1275
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• 2009

We report on preparation of $CaBaSiS_4:Eu^{2+}$ material by an advanced chemical solution method and fluorescent properties of the new material. The emission spectrum of $CaBaSiS_4:Eu^{2+}$ has the main peak centered at 598 nm, with the corresponding excitation maximum at around 420 nm. The strongest emission intensity of this material approached 96% compared to one of the best commercially available YAG:$Ce^{3+}$ phosphor.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.307-308
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• 2006

We have synthesized $CaS:Eu^{2+}$ phosphor by using a sealing vessel and evaluated its photoluminescence properties. The method using a sealing vessel is simple and economical in comparison with other methods reported up to date, As an activator concentration was increased from 0.1 mol to 4 mol, the main emission wavelength of the phosphor was increased from 642 nm to 651 nm due to crystal field splitting of 5d level of $Eu^{2+}$ ions. Although the same amount of $Eu_2O_3$ was used, the concentration of the activator ions which were reduced from $Eu^{3+}$ to $Eu^{2+}$ and substituting $Ca^{2+}$ ions was increased with increase of firing temperature. Therefore, the main emission wavelength was also increased from 645 nm to 651 nm with increase of firing temperature from $1100^{\circ}C$ to $1300^{\circ}C$.

• 한국세라믹학회지
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• 제44권3호
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• pp.147-151
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• 2007

An improvement for the efficiency of the $Sr_{2}SiO_{4}:Eu$ yellow phosphor under the $450{\sim}470\;nm$ excitation range have been achieved by adding the co-doping element ($Mg^{2+}\;and\;Ba^{2+}$) in the host. White LEDs were fabricated through an integration of an blue (InGaN) chip (${\lambda}_{cm}=450\;nm$) and a blend of two phosphors ($Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor) in a single package. The InGaN-based two phosphor blends ($Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor) LEDs showed three bands at 450 nm, 550 nm and 640 nm, respectively. The 450 nm emission band was due to a radiative recombination from an InGaN active layer. This 450 nm emission was used as an optical transition of the $Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor. As a consequence of a preparation of white LEDs using the $Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor yellow phosphor and CaS:Eu red phosphor, the highest luminescence efficiency was obtained at the 0.03 mol $Ba^{2+}$ concentration. At this time, the white LEDs showed the CCT (5300 K), CRI (89.9) and luminous efficacy (17.34 lm/W).

• Transactions on Electrical and Electronic Materials
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• 제8권6호
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• pp.255-259
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• 2007

We have synthesized $CaS:Eu^{2+}$ phosphor by using a sealing vessel and evaluated its photoluminescence properties. The method using a sealing vessel is simple and economical in comparison with other methods reported up to date. As an activator concentration was increased from 0.1 mol% to 4 mol%, the main emission wavelength of the phosphor was increased from 642 nm to 651 nm due to the crystal field splitting of 5d levels of $Eu^{2+}$ ion. Although the same amount of $Eu_2O_3$ was used, the concentration of the activator ions, which were reduced from $Eu^{3+}\;to\;Eu^{2+}$ and substituted $Ca^{2+}$ ions, was increased with increase of firing temperature. Therefore, the main emission wavelength was also. shifted from 645 nm to 651 nm with increase of firing temperature from $1100^{\circ}C\;to\;1300^{\circ}C$. The critical distance($R_{c1}=20.65\;{\AA}$) between $Eu^{2+}$ ions calculated from the critical concentration was well matched with that($R_{c2}=19.17\;{\AA}$) calculated from the Dexter formula.