• 한국세라믹학회지
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• 제39권5호
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• pp.490-497
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• 2002

$CaO-SiO_2-B_2O_3$계의 결정화유리의 소결 특성 및 기계적 특성, 생체활성을 알아보았다. 이 조성의 결정화유리는 750-830${\circ}$ 사이에서 소결 되었으며 치밀한 미세구조를 보였다. 이 결정화 유리는 단사정계 월라스토나이트(monoclinic wollastonite), 칼슘보레이트(Calcium borate, $CaB_2O_4$) 결정상과 보로실리케이트(borosilicate) 유리 기지상(matrix)의 3상으로 구성되었다. 기계적 강도는 지금까지 알려진 다른 생체활성 세라믹스보다 우수하였으며 특히 압축강도(2813 MPa), 파괴인성($3.12 MPa{\cdot}m^{1/2}$)이 높았다. 생체활성은 결정화유리 중 calcium borate와 보로실리케이트 유리의 양에 의존하였는데, 용해도가 높은 calcium borate는 의사체액(SBF)의 칼슘이온의 과포화도를 상승시키고 borosilicate 유리는 탄산아파타이트 핵생성에 필요한Si-OH기를 형성시켜 탄산아파타이트 층이 빨리 생성되기 때문으로 판단된다. 따라서 $CaB_2O_4$와 borosilicate 유리가 많을수록 결정화유리의 생체활성이 뛰어난 것으로 생각된다.

• 한국결정성장학회지
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• 제8권1호
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• pp.169-178
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• 1998

CaO-$SiO_2-P_2O_5$ 3성분계 유리화 영역(glass forning region)내의 여러조성(A:$SiO_2$- rich조성, B:CaO-rich조성, C:$P_2O_5$-rich조성, D, E:A, B, C의 중간조성)을 가지는 유리분말을 결정화시켰을 때 유리중에 석출되는 결정상(crystal phase)을 분말 XRD로 확인하였다. 여러조성중 apatite(($Ca_{10}(PO_4)_6O$)와 $\beta$-wollastonite($CaSiO_3$)결정이 석출되고, 굽힘강도가 우수한 E조성(CaO 49.4, $SiO_2\;36.8,\;P_2O_5$8.8wt%)을 선택하여 이 조성의 유리분말을 일방향으로 결정화 소결하였다. 제조된 결정화 소결체에 대하여 charaterization을 하고 굽힘강도를 측정하였다. 또한 결정화 소결체와 생체뼈와의 결합성을 조사하기 위하여 유사체액(simulated body fluid)내에서 침적실험을 하였으며, 결정화 소결체의 표면을 thin-film XRD, FT-IR로 분석하였다. 실험결과, apatite와 wollastonite 결정이 석출된 치밀한 결정화 소결체가 얻어졌으며, 이들 결정은 wollastonite 결정의 (202)면이 인상방향에 수직으로 성장하는 경향을 보였다. 또한 제조된 결정화 소결체는 평균 186.9MPa의 굽힘강도를 나타내어 일반적 방법으로 제조되는 결정화 소결체보다 높은 역학적 성질을 보였다. 유사체액내의 침적실험결과, 시료표면위에 apatite 결정층이 3일후부터 형성되어 생체뼈와 화학결합을 이룰 가능성이 있음을 알았다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.272-273
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• 2006

LTCC(low temperature co-fired ceramics)용 glass/ceramic 복합체를 제조하기 위해 4 종류의 borosilicate계 glass를 선정하고 filler로 $Al_2O_3$ ceramics를 filler 사용하여 30~50 vol% glass frit에 따른 소결 및 유전 특성에 대하여 조사하였다. Glass frit은 $SiO_2$와 $B_2O_3$ 함량비를 고정한 후 R(CaO, BaO, ZnO, $Bi_2O_3$)에 따라 유리 연화온도(Ts)와 함량이 소결에 미치는 영향 및 유전 특성 변화를 고찰한 결과, CaO-$B_2O_3-SiO_2$ glass의 경우 다량의 2 차상이 형성되었고, 이에 $900^{\circ}C$ 이하에서 완전 소결이 이루어지지 않았으며, BaO-$B_2O_3-SiO_2$ glass는 celsian($BaAl_2Si_2O_8$) 결정이 형성되면서 소결성의 저하를 갖고 왔으며, ZnO-$B_2O_3-SiO_2$ glass는 소결이 진행됨에 따라 주상이 $Al_2O_3$에서 gahnite($ZnAl_2O_4$) 결정이 형성되면서 품질계수가 크게 증가하였으며, $Bi_2O_3-B_2O_3-SiO_2$ glass는 45 vol%일 때 $900^{\circ}C$에서부터 일정한 선수축율 특성을 나타내었지만, 다량의 액상으로 인하여 유전 특성의 저하를 나타내었다.

• The Korean Journal of Ceramics
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• 제5권2호
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• pp.189-194
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• 1999

Crystallization of glasses in the system (Ca, Sr, Ba)$O-Al_2O_3-B_2O_3-SiO_2-TiO_2$ and dielectric properties of crystallized glasses were investigated. As increasing B2O3 content and decreasing SiO2 content in the glass, the major crystalline phase changed from $(Sr, Ba)_2TiSi_2O_8$ to (Ca, Sr, Ba)TiO3, the dielectric constant of crystallized glasses increased and the Temperature Coefficient of Capacitance (TCC) changed to negative. The dielectric constant and TCC was estimated for (Sr, Ba)2TiSi2O8 phase as 18 and -440 $ppm/^{\circ}C$, respectively and for (Ca, Sr, Ba)TiO3 phase as 307 and -1900 $ppm/^{\circ}C$, respectively. The dielectric properties of (Ca, Sr, Ba)TiO3 phase (in this study) were similar to those of (Ca, Ba) TiO_3 solid-solution^12)$, but $(Sr, Ba)_2TiSi_2O_8$ phase (in this study) and $Sr_2TiSi_2O_\;8^4$ showed the different properties.

• The Korean Journal of Ceramics
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• 제5권4호
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• pp.336-340
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• 1999

Glasses in the system $CaO-TiO_2-SiO_2-Al_2O_3-ZrO_2-B_2O_3$ were investigated to find the glass seal compositions suitable for use in the planar solid oxide fuel cell (SOFC). Glass-ceramics prepared from the glasses by one-stage heat treatment at $1,000^{\circ}C$ showed various thermal expansion coefficients (i,e., $8.6\times10^{-6^{\circ}}C^{-1}$ to $42.7\times10^{-6^{\circ}}C^{-1}$ in the range 25-$1,000^{\circ}C$) due to the viscoelastic response of glass phase. The average values of contact angles between the zirconia substrate and the glass particles heated at 1,000-$1,200^{\circ}C$ were in the range of $131^{\circ}\pm4^{\circ}$~$137^{\circ}\pm9^{\circ}$, indicating that the glass-ceramic was in partial non-wetting condition with the zirconia substrate. With increasing heat treatment time of glass samples from 0.5 to 24 h at $1,100^{\circ}C$, the DC electrical conductivity of the resultant glass-ceramics decreased from at $800^{\circ}C$. Isothermal hold of the glass sample at $1100^{\circ}C$ for 48h resulted in diffusion of Ca, Si, and Al ions from glass phase into the zirconia substrate through the glass/zirconia bonding interface. Glass phase and diffusion of the moving ion such as $Ca^{2+}$ in glass phase is responsible for the electrical conduction in the glass-ceramics.

• 한국세라믹학회지
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• 제47권5호
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• pp.467-473
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• 2010

The objective of this study is to prepare lead-free thick film resistor (TFR) paste compatible with AlN substrate for hybrid microelectronics. For this purpose, CaO-ZnO-$B_2O_3-Al_2O_3-SiO_2$ glass system was chosen as a sintering aid of $RuO_2$. The effects of the weight ratio of CaO to ZnO in glass composition, the glass content and the sintering temperature on the electrical properties of TFR were investigated. $RuO_2$ as a conductive and glass powder were dispersed in an organic binder to obtain printable paste and then thick-film was formed by screen printing, followed by sintering at the range between $750^{\circ}C$ and $900^{\circ}C$ for 10 min with a heating rate of $50^{\circ}C$/min in an ambient atmosphere. The addition of ZnO to glass composition and sintering at higher temperature resulted in increasing sheet resistance and decreasing temperature coefficient of resistance. Using $RuO_2$-based resistor paste containing 40 wt%glass of CaO-20.5%ZnO-25%$B_2O_3$-7%$Al_2O_3$-15%$SiO_2$ composition, it is possible to produce thick film resistor on AlN substrate with sheet resistance of $10.6\Omega/\spuare$ and the temperature coefficient of resistance of 702ppm/$^{\circ}C$ after sintering at $850^{\circ}C$.

• 한국세라믹학회지
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• 제17권4호
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• pp.213-216
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• 1980

A glass-ceramics material of composition %SiO_2$: 38.50, $Al_2O_3$: 26.00, $Na_2O$: 18.00, CaO: 6.00, MgO: 4.00, $TiO_2$: 7.50 was strengthened by coating a series of glazes$(SiO_2-B_2O_3-Al_2O_3-CaO-PbO-Na_2O-)$, which has lower thermal expansion coefficient than that of the glass-ceramics. The thermal expansion coefficient of the glazes ranges $80~90{\times}10^{-7}$cm/cm/$^{\circ}C$, whereas that of the glass-ceramics is $115{\times}10^{-7}$cm/cm/$^{\circ}C$. The glass-ceramics was identified to be composed of nepheline, carnegieite low form, and meta sodium silicate crystal by X-ray diffraction phase analysis. The glaze, having lower melting point and appropriate thermal expansion coefficient, was tried to be stable and good at secondary heat treatment.

• 한국전기전자재료학회논문지
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• 제20권1호
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• pp.19-24
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• 2007

The effects of $B_2O_3-SiO_2-R(R;CaO,\;BaO,\;ZnO,\;Bi_2O_3)$ borosilicate glass system on the sintering behavior and microwave dielectric properties of ceramic/glass composites were investigated as functions of modifier, glass addition ($30{\sim}50\;vol%$) and sintering temperature ($500{\sim}900^{\circ}C$ for 2 hrs). The addition of 50 and 45 vol% glass ensured successful sintering below $900^{\circ}C$. Sintering characteristics of the composites were well described in terms of modifier. Borosilicate glass enhanced the reaction with $Al_{2}O_{3}$ to form pores, second phases and liquid phases, which was responsible to component of modifier. Dielectric constant (${\varepsilon}_{r},\;Q{\times}f_{o}$) and temperature coefficient of resonant frequency (${\tau}_{f}$) of the composite with 50 and 45 vol% glass contents($B_{2}O_{3}:SiO_{2}:R=25:10:65$) demonstrated A-CaBS(7.8, 2,560 GHz, -81ppm/$^{\circ}C$), A-BaBs(5.8, 3.130 GHz, -64 ppm/$^{\circ}C$), A-ZnBS(5.7, 17,800 GHz, -21 ppm/$^{\circ}C$), A-BiBs(45 vol% glass in total)(8.3, 2,700 GHz, -45 ppm/$^{\circ}C$) which is applicable to substrate requiring an low dielectric properties.

• 소성∙가공
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• 제15권3호
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• pp.213-219
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• 2006

To improve the strength of glass is being studied in order to contribute to weight saving of flat panel displays. Generally, the strength achieved of glass-ceramics is higher as is the fracture toughness by the formation of a heterogeneous phase inside glass. In this study, Ag-doped $45SiO_2-24CaO-24Na_2O-4P_2O_5\;and\;70SiO_2-10CaO-24Na_2O-10TiO_2$ glasses were irradiated to strengthen by crystallization using femto-second laser pulse. XRD, Nano-indenter and SEM etc., irradiation of laser pulse without heat-treated samples was analyzed. Samples irradiated by laser had higher value($4.4{\sim}4.56^*10-3Pa$) of elastic modulus which related with strength of glass than values heat-treated samples and these are $1.2{\sim}1.5$ times higher values than them of mother glass. This process can be applicable to the strengthening of thinner glass plate, and it has an advantage over traditional heat-treatment and ion-exchange method.

• 한국전기전자재료학회논문지
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• 제29권12호
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• pp.781-785
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• 2016

With trend of the miniaturization and the high-functionalizing of mobile communication system, low-loss microwave dielectric materials are widely used for high frequency communication components. These dielectric materials should be co-sintered with highly electric-conducting metal such as silver or copper for high-frequency and thick film process application. Sintering temperature of $Ca(Li_{1/3}Nd_{2/3})_{0.2}Ti_{0.8}]O_{3-{\delta}}$, which has excellent dielectric properties such as ${\varepsilon}_r$ above 40, quality factor ($Q{\cdot}f_0$) above 16,000 GHz, and TCF (temperature coefficient of resonant frequency) of $-20{\sim}-10ppm/^{\circ}C$, is reported as high as $1,175^{\circ}C$, so it could not be co-sintered with silver or copper. Therefore in this study, low-temperature melting glasses of Zn-B-O and Zn-B-Si-O systems were added to $Ca[(Li_{1/3}Nb_{2/3})_{0.8}Ti_{0.2}]O_{3-{\delta}}$ to lower its sintering temperature under $900^{\circ}C$ without losing excellency of dielectric properties. With 15 weight % of Zn-B-Si-O glass and sintered at $875^{\circ}C$, specimen showed density of $4.11g/cm^3$, ${\varepsilon}_r$ of 40.1, $Q{\cdot}f_0$ of 4,869 GHz, and TCF of $-5.9ppm/^{\circ}C$. With 15 weight % of Zn-B-O glass and sintered at $875^{\circ}C$, specimen showed density of $4.14g/cm^3$, ${\varepsilon}_r$ of 40.4, $Q{\cdot}f_0$ of 7,059 GHz, and TCF of $-0.92ppm/^{\circ}C$.