• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.540-544
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• 1996

To apply the CVD diamond film to coated tools, it is necessary to make adhesion strength between diamond film and substrate stronger. So adhesion strength of diamond coated WC-Co tools using Microwave Plasma CVD and cutting test of Al-18mass%Si alloy using diamond cutting tools were studied. Diamond coating was carried out using Microwave Plasma CVD apparatus. Reaction gas was used mixture of methane and hydrogen. Substrate temperature were varied from 673K to 1173K by control of microwave output power and reaction pressure. By observation of SEM, grain size became larger and larger as substrate temperature became higher and higher. Also all deposits were covered with clear diamond crystals. XRD results, the deposits were identified to cubic diamond. An analysis using Raman spectroscopy, the deposit synthesized at lower substrate temperature (673K) showed higher quality than deposit synthesized at higher substrate temperature (1173K). As a result of scratch adhesion strength test, from 873K to 1173K adhesion strength decreased by rising of substrate temperature. The deposit synthesized at 873K showed best adhesion strength. In the cutting test of Al-18mass%Si alloy using diamond coated tools and the surface machinability of Al-Si works turned with diamond coating tools which synthesized at 873K presented uniform roughness. Cutting performance of Al-18mass%Si alloys using diamond coated WC-Co tools related to the adhesion strength.

• Journal of the Semiconductor & Display Technology
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• v.19 no.2
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• pp.16-21
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• 2020

How accurately reproducible energy is delivered to the wafer in the process of making thin films using PE-CVD (Plasma enhanced chemical vapor deposition) during the semiconductor process. This is the most important technique, and most of the reaction on the wafer surface is made by thermal energy. In this study, we studied the method of monitoring the change of thermal energy transferred to the wafer surface by monitoring the temperature change according to the change of the thin film formed on the showerhead facing the wafer. Through this research, we could confirm the monitoring of wafer thin-film which is changed due to abnormal operation and accumulation of equipment, and we can expect improvement of semiconductor quality and yield through process reproducibility and equipment status by real-time monitoring of problem of deposition process equipment performance.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.383-383
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• 2009

Silicon is commercially prepared by the reaction of high-purity silica with wood, charcoal, and coal, in an electric arc furnace using carbon electrodes, so called the metallurgical refining process, which produces ~98% pure Si (MG-Si). This can be further purified to solar grade silicon (SoG-Si) by various techniques. The most problematic impurity elements are B and P because of their high segregation coefficients. In this study, we explored the possibility of the using Cat-CVD for Si purification. The existing hot-wire CVD was modified to accommodate the catalyzer and the heating source. Mo boat (1.5 cm ${\times}$ 1 cm ${\times}$ 0.2 cm) was used as a heating source. Commercially available Si was purchased from Nilaco corporation (~99% pure). This powder was kept in the Mo-boat and heated to the purification temperature. In addition to the purification by cat-CVD technique, other methods such as thermal CVD, plasma enhanced CVD, vacuum annealing was also tried. It is found that the impurities are reduced to a great extent when treated with cat-CVD method.

• Bulletin of the Korean Chemical Society
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• v.27 no.2
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• pp.219-223
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• 2006

The thermal decomposition of tetrakis(ethylmethylamido) titanium (TEMAT) has been investigated in Ar and $H_2$ gas atmospheres at gas temperatures of 100-400 ${^{\circ}C}$ by using Fourier Transform infrared spectroscopy (FTIR) as a fundamental study for the chemical vapor deposition (CVD) of titanium nitride (TiN) thin film. The activation energy for the decomposition of TEMAT was estimated to be 10.92 kcal/mol and the reaction order was determined to be the first order. The decomposition behavior of TEMAT was affected by ambient gases. TEMAT was decomposed into the intermediate forms of imine (C=N) compounds in Ar and $H_2$ atmosphere, but additional nitrile (RC$\equiv$N) compound was observed only in $H_2$ atmosphere. The decomposition rate of TEMAT under $H_2$ atmosphere was slower than that in Ar atmosphere, which resulted in the extension of the regime of the surface reaction control in the CVD TiN process.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.533-538
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• 2013

Silicon carbide (SiC) materials are typical ceramic materials with a wide range of uses due to their high hardness and strength and oxidation resistance. In particular, due to the corrosion resistance of the material against acids and bases including the chemical resistance against ionic gases such as plasma, the application of SiC has been expanded to extreme environments. In the SiC deposition process, where chemical vapor deposition (CVD) technology is used, the reactions between the raw gases containing Si and C sources occur from gas phase to solid phases; thus, the merit of the CVD technology is that it can provide high purity SiC in relatively low temperatures in comparison with other fabrication methods. However, the product yield rarely reaches 50% due to the difficulty in performing uniform and dense deposition. In this study, using a computational fluid dynamics (CFD) simulation, the gas velocity inside the reactor and the concentration change in the gas phase during the SiC CVD manufacturing process are calculated with respect to the gas velocity and rotational speed of the stage where the deposition articles are located.

• Journal of the Korean institute of surface engineering
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• v.18 no.3
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• pp.116-124
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• 1985

Chemical vapor deposition of $SnO_2$ on Pyrex glass substrate has been investigated using $SnCl_4$ and Oxygen at relatively low temperatures(300-500$^{\circ}C$). The critical flow rate, which delineated the surface reaction controlled region from the mass transfer controlled region, was increased with deposition temperature. The apparent activation energy obtained in surface reaction controlled region was about 6Kcal/mole. The results show that deposition rate, electrical conductivity and transmittance were affected mainly by partial pressure of $SnCl_4$, but little by partial pressure f oxygen. The % transmission of 5000A-thick $SnO_2$ film was about 90% in visible spectrum region and sheet resistance was varied in 0.1-10${\Omega}$ per square shaped portion of the outer surface of the oxide.

• Journal of computational fluids engineering
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• v.18 no.3
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• pp.67-71
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• 2013

Recently, the rapid development of the semiconductor industry induces the prompt technical progress in the area of device integration and the application of large diameter wafers for the price competitiveness. As a result of the usage of large wafers in the semiconductor industry, the silicon carbide components which have layers of silicon carbide on graphite or RBSC substrates is getting widely used due to the advantages of SiC such as high hardness and strength, chemical and ionic resistant to all the environments superior than other ceramic materials. For the uniform and homogeneous deposition of silicon carbide on these huge components, it needs to know about the gas flow in the CVD reactor, not only for the delicate adjustment of the process variables but more essentially for the cost reduction for the shape change of specimens and their holders on the stage of reactor. In this research, the CFD simulation is challenged for the prediction of the inner distribution of the gas velocity. Chemical reaction simulation is used to predict the distribution of concentration of the reacting gas with the rotating velocity of the stage. With the increase of the rotating speed, more uniform distribution of the reacting gas on the surface of the stage was obtained.

• Membrane Journal
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• v.15 no.4
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• pp.330-337
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• 2005

Water selective silica membranes were prepared fur use as membrane reactor for synthesis of dimethyl ether (DME) by methanol dehydration. Silica membranes formed on a Porous SUS tube by ultrasonic spray Pyrolysis (USP) and chemical vapor deposition (CVD) using tetraethoxysilane (TEOS) as precursor. The CVD-derived membranes formed higher level of trade-off line between water permeance and water/methanol selectivity than that of the USP-derived membranes. The membrane reactor possessing water permeance of $1.2\times10^{-7}\;mol\;{\cdot}\;m^{-2}\;{\cdot}\;S^{-1}\;{\cdot}\;Pa^{-1}$ and water/methanol selectivity of 10 exhibited increase in methanol conversion of about $20\%$ comparing to conventional reactor system. These findings led us to conclude that the dehydration membrane reactor simultaneously separating the water vapour produced in the reaction zone was effective in increasing the reaction conversion.

• Journal of the Korean Ceramic Society
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• v.28 no.6
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• pp.429-436
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• 1991

Silicon carbide has been grown by a chemical vapor deposition (CVD) technique using CH3SiCl3 and H2 gaseous mixture onto a graphite substrate. Based on the thermodynamic equilibrium studies and the suggestion that the deposition rate of SiC is controlled by surface reaction theoretical kinetic equation for CVD of silicon carbide has been proposed. The proposed theoretical kinetic equation for CVD of silicon carbide agreed well with the experimental results for the variation of the deposition rate as a function of the partial pressure of reactant gases. The Vikers microhardness of the SiC layer was about 3000∼3400 kg/$\textrm{mm}^2$ at room temperature.

• Journal of the Korean Ceramic Society
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• v.31 no.1
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• pp.88-96
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• 1994

Hot filament-assisted CVD was carried out to deposit diamond films on Si(100) substrate at 90$0^{\circ}C$ using a 1% CH4-H2 mixture gas. Deposition was made at various conditions of mass flow rate of the feed gas (30~1000 sccm), pressure (2.5~300 Torr), and filament-substrate distance (4~15 mm), and the deposited films were characterized by SEM, XRD, and Raman spectroscopy. As the flow rate increases, the growth rate also increased but the crystallinity of the film was degraded. A longer filament-substrate distance simply caused both the growth rate and the crystallinity to become poorer. On the other hand, the pressure variation resulted in a maximum growth rate of 2.6 ${\mu}{\textrm}{m}$/hr at 10 Torr and the best film quality around 50 Torr, exhibiting an optimum condition. The observed trends were interpreted in terms of the flow velocity-dependent pyrolysis reaction efficiency and mass transport through the boundary layer.