• 한국결정성장학회지
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• 제30권1호
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• pp.21-26
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• 2020

이 논문은 라이트박스의 주력 상품인 세 가지 색의 합성 다이아몬드의 분광학적 특성에 대해 분석한 결과이다. 드비어스의 브랜드인 라이트박스 주얼리는 2018년 9월부터 CVD 합성 다이아몬드를 판매하기 시작했다. 본 연구에서 검사된 샘플은 0.25 ct, 0.25 ct, 0.26 ct의 무색(H grade), 핑크, 청색의 합성 다이아몬드이며, 각 샘플의 테이블 중앙에는 라이트박스 로고가 레이저 각인되어 있었다. 분광학적 기법에 기초한 분석 결과, 무색 샘플은 결정성장 후 색 향상을 위한 고온고압 처리과정을 거치지 않았다. 핑크 샘플은 H3, 3H, 594 nm, NV, GR1의 광학 결함이 발견되었고, 이로 인해 결정성장 후 색 향상을 위해 조사와 열처리 과정을 거친 것으로 판단했다. 또한 블루 샘플은 열처리 과정 없이 조사만 되었음을 알 수 있었다.

• Korean Chemical Engineering Research
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• 제49권4호
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• pp.405-410
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• 2011

본 연구에서는 화학 증착법을 이용하여 텅스텐 산화물을 제조한 후 기판 온도에 따른 성막 특성을 분석하고, 성막 된 텅스텐 산화물을 전기 변색 소자 제조에 응용하여 소자 특성을 살펴보았다. 증착 온도 $300^{\circ}C$ 이상에서 최대 성막속도($8{\mu}m/min$)를 얻을 수 있었으며, $275^{\circ}C$ 이하에서는 표면 반응 율속 특성을 보였고 이때 겉보기 활성화 에너지 값은 45.9 kJ/mol이였다. 성막 된 텅스텐 산화물은 $275^{\circ}C$ 이하에서는 비정질막이, 그 이상 온도에서는 결정질 막이 형성되었다. 전기 변색 소자 적용시 유리한 비정질막이 성막되는 조건에서 증착 온도 및 두께 변화에 따른 전기 변색 특성을 평가하였다. 증착 온도가 동일한 경우 두께가 두꺼울수록 그리고 두께가 일정한 경우는 증착 온도가 낮을수록 변색 효율 측면에서 유리한 결과를 얻었다.

• 한국세라믹학회지
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• 제35권11호
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• pp.1233-1239
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• 1998

Gas phase compositions of the hot filament-assisted diamond CVD reaction were analyzed by on-line quadrupole mass analysis(QMA) technique. D2 isotope experiments showed that methance molecules were decomposed into atomic state and then recombined in to acetylene during transport the probe line. Although acetylene or ethylene was supplied instead of methane similar gas compositions were obtained when filament temperature was above 1500$^{\circ}C$ Therefore this system could be assumed near thermal equilibrium state. Filament temperature and reaction pressure variation experiments exhibited the same tendency between acetylene concentration and diamond growth rate and these results implied that acetylene molecule played the role of the reactive species in the diamond CVD reaction.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.108.1-108.1
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• 2007

• Bulletin of the Korean Chemical Society
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• 제25권5호
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• pp.617-619
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• 2004

As an pretreatment, a Fe$(NO_3)_3{\cdot}9H_2O-Al(OH)_3$mixture was ground by a high energy mill and used as a supported catalyst for the growth of carbon nanotubes by a thermal CVD. The crystal structure of the catalyst disordered by the grinding influenced significantly the synthesis of carbon nanotubes in a thermal CVD.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.421-421
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• 2012

Graphene has drawn enormous attention owing to its outstanding properties, such as high charge mobility, excellent transparence and mechanical property. Synthesis of Graphene by chemical vapor deposition (CVD) is an attractive way to produce large-scale Graphene on various substrates. However the fatal limitation of CVD process is high temperature requirement(around $1,000^{\circ}C$), at which many substrates such as Al substrate cannot endure. Therefore, we propose plasma enhanced CVD (PECVD) and decrease the temperature to $400^{\circ}C$. Fig. 1 shows the typical structure of RF-PECVD instrument. The quality of Graphene is affected by several variables. Such as plasma power, distance between substrate and electronic coil, flow rate of source gas and growth time. In this study, we investigate the influence of these factors on Graphene synthesis in vacuum condition. And the results were checked by Raman spectra and conductivity measurement.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.760-763
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• 2007

The properties of carbon nanotube obtained by thermal chemical vapor deposition (CVD) process were investigated as a function of ammonia $(NH_3)$ gas in hydrocarbon gas, Fe catalyst thickness, and growth temperature. Fe catalyst was prepared by DC magnetron sputter and pre-treated with ammonia gas. CNTs were then grown with ammonia-acetylene gas mixture by thermal CVD. The diameter of these CNTs shows a strong correlation with the gas rate, the catalyst film thickness and temperature. From our results, it was found that the factors of grown CNTs positively acted to improve CNT quality.

• 한국표면공학회지
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• 제29권5호
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• pp.487-493
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• 1996

Diamond films were grown at lower temperatures (630-813K) on Si, Al (1100P), and Al-Si(8A, 8B, BC) alloy substrates using improved microwave plasma CVD apparatus in a mixed methane and hydrogen plasma. Improved microwave plasma CVD apparatus equipped water cooled substrate holder and the substrates were set up lower position than bottom line of the applicator waveguide. When the methane concentration was high and growth was conducted at lower pressures the diamond films were synthesized. Moreover the deposits on the scratched substrates formed flat surfaces consisting of fine grains. XRD results, the deposits were identified to cubic diamond. An analysis using Raman spectroscopy, further confirmed that diamond films deposited on the Si substrates were high quality. The deposits on the Al substrates, in contrast, contained amorphous carbon. While the quality of the deposits on the Al-Si substrates were differed with the substrate alloys.

• 열처리공학회지
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• 제34권2호
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• pp.75-80
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• 2021

The crystal grains of polycrystalline diamond vary depending on deposition conditions and growth thickness. The diamond thin film deposited by the CVD method has a very rough growth surface. On average, the surface roughness of a diamond thin film deposited by CVD is in the range of 1-100 um. However, the high surface roughness of diamond is unsuitable for application in industrial applications, so the surface roughness must be lowered. As the surface roughness decreases, the scattering of incident light is reduced, the heat conduction is improved, the mechanical surface friction coefficient can be lowered, and the transmittance can also be improved. In addition, diamond-coated cutting tools have the advantage of enabling ultra-precise machining. In this study, the surface roughness of diamond was improved by thermal diffusion reaction between diamond carbon atoms and ferrous metals at high temperature for diamond thin films deposited by MPCVD.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.652-652
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• 2013

The conventional thermal chemical vapor deposition (CVD) setup for the graphene synthesis has mainly used convective heat transfer in order to heat a catalyst (e.g. Cu) up to $1,000^{\circ}C$. Although the conventional CVD has been so far widely accepted as the most appropriate candidate enabling mass-production of high-quality graphene, this method has stillremained under the standard for the commercialization largely due to the poor productivity arisen out of the required long processing time. Here, we introduced a fast and efficient synthetic route toward CVD-graphene. Unlike the conventional CVD using convection heat transfer, we adopted a CVD setup utilizing conduction heat transfer between Cu catalyst and rapid heating source. The high thermal conductive nature of Cu and the employed rapid heating source led to the remarkable reduction in processing timeas compared to the conventional convection based CVD (Fig. 1A), moreover, the synthesized graphene was turned out to have comparable quality to that synthesized by the conventional CVD (Fig. 1B). For the optimization of the conduction based CVD process, the parametric studies were thoroughly performed using through Raman spectroscopy and electrical sheet resistance measurement. Our approach is thought to be worth considerable in order to enhance productivity of the CVD graphene in the industry.