• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.111-112
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• 2009

Diamond-like carbon (DLC) is a convenient term to indicate the compositions of the various forms of amorphous carbon (a-C), tetrahedral amorphous carbon (ta-C), hydrogenated amorphous carbon and tetrahedral amorphous carbon (a-C:H and ta-C:H). The a-C film with disordered graphitic ordering, such as soot, chars, glassy carbon, and evaporated a-C, is shown in the lower left hand corner. If the fraction of sp3 bonding reaches a high degree, such an a-C is denoted as tetrahedral amorphous carbon (ta-C), in order to distinguish it from sp2 a-C [2]. Two hydrocarbon polymers, that is, polyethylene (CH2)n and polyacetylene (CH)n, define the limits of the triangle in the right hand corner beyond which interconnecting C-C networks do not form, and only strait-chain molecules are formed. The DLC films, i.e. a-C, ta-C, a-C:H and ta-C:H, have some extreme properties similar to diamond, such as hardness, elastic modulus and chemical inertness. These films are great advantages for many applications. One of the most important applications of the carbon-based films is the coating for magnetic hard disk recording. The second successful application is wear protective and antireflective films for IR windows. The third application is wear protection of bearings and sliding friction parts. The fourth is precision gages for the automotive industry. Recently, exciting ongoing study [1] tries to deposit a carbon-based protective film on engine parts (e.g. engine cylinders and pistons) taking into account not only low friction and wear, but also self lubricating properties. Reduction of the oil consumption is expected. Currently, for an additional application field, the carbon-based films are extensively studied as excellent candidates for biocompatible films on biomedical implants. The carbon-based films consist of carbon, hydrogen and nitrogen, which are biologically harmless as well as the main elements of human body. Some in vitro and limited in vivo studies on the biological effects of carbon-based films have been studied [$2{\sim}5$].The carbon-based films have great potentials in many fields. However, a few technological issues for carbon-based film are still needed to be studied to improve the applicability. Aisenberg and Chabot [3] firstly prepared an amorphous carbon film on substrates remained at room temperature using a beam of carbon ions produced using argon plasma. Spencer et al. [4] had subsequently developed this field. Many deposition techniques for DLC films have been developed to increase the fraction of sp3 bonding in the films. The a-C films have been prepared by a variety of deposition methods such as ion plating, DC or RF sputtering, RF or DC plasma enhanced chemical vapor deposition (PECVD), electron cyclotron resonance chemical vapor deposition (ECR-CVD), ion implantation, ablation, pulsed laser deposition and cathodic arc deposition, from a variety of carbon target or gaseous sources materials [5]. Sputtering is the most common deposition method for a-C film. Deposited films by these plasma methods, such as plasma enhanced chemical vapor deposition (PECVD) [6], are ranged into the interior of the triangle. Application fields of DLC films investigated from papers. Many papers purposed to apply for tribology due to the carbon-based films of low friction and wear resistance. Figure 1 shows the percentage of DLC research interest for application field. The biggest portion is tribology field. It is occupied 57%. Second, biomedical field hold 14%. Nowadays, biomedical field is took notice in many countries and significantly increased the research papers. DLC films actually applied to many industries in 2005 as shown figure 2. The most applied fields are mold and machinery industries. It took over 50%. The automobile industry is more and more increase application parts. In the near future, automobile industry is expected a big market for DLC coating. Figure 1 Research interests of carbon-based filmsFigure 2 Demand ratio of DLC coating for industry in 2005. In this presentation, I will introduce a trend of carbon-based coating research and applications.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.97.1-97.1
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• 2010

유연금속기판위에 DC 마그네트론 스퍼터링을 이용하여 Ag/ZnO 이중구조의 후면반사막을 증착하고 Ag 표면조도 변화에 따른 후면반사막의 반사특성 변화와 플렉서블 비정질 실리콘 박막 태양전지의 셀 특성에 미치는 영향을 조사하였다. Substrate구조를 갖는 플렉서블 실리콘 박막 태양전지에서는 실리콘 박막 광흡수층의 상대적으로 낮은 광 흡수율로 인하여 입사광에 대한 태양전지 내에서의 광 산란 및 포획이 태양전지 효율을 증대시키는데 매우 중요한 역할을 하는 것으로 알려져 있다. 플렉서블 실리콘 박막 태양전지에서의 후면반사막은 광 흡수층에서 흡수되지 않는 입사광을 다시 반사시켜 광 흡수를 증대시키며 이때 후면반사막 표면에서 반사 빛을 효율적으로 산란시켜 이동경로를 증대시킴으로써 광 흡수율을 더욱 향상시킬 수 있다. 본 연구에서는 유연금속 기판위에 Ag와 ZnO:Al($Al_2O_3$ 2.5wt%) 타겟을 사용한 DC 마그네트론 스퍼터링법으로 Ag/AZO 이중구조의 후면반사막을 제조하고, Ag 박막의 표면형상 변화와 이에 따른 후면반사막의 반사도 변화를 비교, 분석하였다. 증착 조건 변화에 따른 표면 형상 및 반사 특성은 Atomic Force Mircroscope(AFM), Scanning electron miroscopy(SEM), UV-visible-nIR spectrometry를 통하여 분석하였다. 서로 다른 표면 거칠기를 갖는 후면반사막 위에 n-i-p구조의 a-Si:H 실리콘 박막 태양전지를 제조한 후 태양전지 동작 특성에 미치는 영향을 조사하였다. n,p층은 13.56MHz PECVD, i층은 60MHz VHF CVD를 사용하여 각각 제조 하였으며, Photo I-V, External Quantum Efficiency(EQE) 분석을 통하여 태양전지 특성을 조사 하였다. SEM 분석결과 공정 온도가 증가 할수록 Ag 박막의 표면 결정립 크기도 증가하였으며, AFM분석을 통한 Root-mean-square(Rms)값은 상온에서 $500^{\circ}C$로 증착온도가 증가함에 따라 6.62nm에서 46.64nm까지 증가하였다. Ag 박막의 표면 거칠기 증가에 따라 후면반 사막의 확산 반사도도 함께 증가하였다. 공정온도 $500^{\circ}C$에서 증착된 후면반사막을 사용하여 a-Si:H 태양전지를 제조하였을 때 상온에서 제조한 후면반사막에 비하여 단락전류밀도 (Jsc)값은 9.94mA/$cm^2$에서 13.36mA/$cm^2$로 증가하였으며, 7.6%의 가장 높은 태양전지 효율을 나타내었다.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.4
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• pp.29-32
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• 2009

Dense and periodic arrays of nano-sized holes were patterned in oxide thin film on GaAs substrate. To obtain the nano-size patterns, self-assembling diblock copolymer was used to produce thin film of uniformly distributed parallel cylinders of polymethylmethacrylate (PMMA) in polystyrene (PS) matrix. The PMMA cylinders were removed with UV expose and acetic acid rinse to produce PS nanotemplate. By reactive ion etching, pattern of the PS template was transferred to under laid silicon oxide layer. Transferred patterns were reached to the GaAs substrate by controlling the dry etching time. We confirmed the achievement of etching through the removing oxide layer and observation of GaAs substrate surface. Optimized etching time was 90 to 100 sec. Pore sizes of the nanopattern in the silicon oxide layer were 20~22 nm.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.211-211
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• 1999

Titanium nitride (TiN) thin films have useful properties including high hardness, good electrical conductivity, high melting point, and chemical inertness. The applications have included wear-resistant hard coatings on machine tools and bearings, decorative coating making use of the golden color, thermal control coatings for widows, and erosion resistant coatings for spacecraft plasma probes. For all these applications as feature sizes shrink and aspect ratios grow, the issue of good step coverage becomes increasingly important. It is therefore essential to manufacture conformal coatings of TiN. The growth of TiN thin films by chemical vapor deposition (CVD) is of great interest for achieving conformal deposition. The most widely used precursor for TiN is TiCl4 and NH3. However, chlorine impurity in the as-grown films and relatively high deposition temperature (>$600^{\circ}C$) are considered major drawbacks from actual device fabrication. To overcome these problems, recently, MOCVD processes including plasma assisted have been suggested. In this study, therefore, we have doposited Ti(C, N) thin films on Si(100) and D2 steel substrates in the temperature range of 150-30$0^{\circ}C$ using tetrakis diethylamido titanium (TDEAT) and titanium isopropoxide (TIP) by pulsed DC plamsa enhanced metal-organic chemical vapor deposition (PEMOCVD) method. Polycrystalline Ti(C, N) thin films were successfully grown on either D2 steel or Si(100) surfaces at temperature as low as 15$0^{\circ}C$. Compositions of the as-grown films were determined with XPS and RBS. From XPS analysis, thin films of Ti(C, N) with low oxygen concentration were obtained. RBS data were also confirmed the changes of stoichiometry and microhardness of our films. Radical formation and ionization behaviors in plasma are analyzed by optical emission spectroscopy (OES) at various pulsed bias and gases conditions. H2 and He+H2 gases are used as carrier gases to compare plasma parameter and the effect of N2 and NH3 gases as reactive gas is also evaluated in reduction of C content of the films. In this study, we fond that He and H2 mixture gas is very effective in enhancing ionization of radicals, especially N resulting is high hardness. The higher hardness of film is obtained to be ca. 1700 HK 0.01 but it depends on gas species and bias voltage. The proper process is evident for H and N2 gas atmosphere and bias voltage of 600V. However, NH3 gas highly reduces formation of CN radical, thereby decreasing C content of Ti(C, N) thin films in a great deal. Compared to PVD TiN films, the Ti(C, N) film grown by PEMOCVD has very good conformability; the step coverage exceeds 85% with an aspect ratio of more than 3.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.211-212
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• 2010

GaN 기반의 상부발광형 LED는 동작되는 동안 생기는 전기적 단락, 그리고 칩 위의 p-형 전극과 n-형 전극 사이에 생기는 누설전류 및 신뢰성 확보를 위하여 칩 표면에 passivation 층을 형성하게 된다. SiO2, Si3N4와 같은 passivation layers는 일반적으로 PECVD (Plasma Enhanced Chemical Vapor Deposition)공정을 이용한다, 하지만 이는 공정 특성상 plasma로 인한 damage가 유발되기 때문에 표면 누설 전류가 증가 한다. 이로 인해 forward voltage와 reverse leakage current의 특성이 저하된다. 본 실험에서는 원자층 단위의 박막 증착으로 인해 PECVD보다 단차 피복성이 매우 우수한 PEALD(Plasma Enhanced Atomic Layer Deposition)공정을 이용하여 Al2O3 passivation layer를 증착한 후, 표면 누설전류와 빛의 출력 특성에 대해서 조사해 보았다. PSS (patterned sapphire substrate) 위에 성장된 LED 에피구조를 사용하였고, TCP(Trancformer Copled Plasma)장비를 사용하여 에칭 공정을 진행하였다. 이때 투명전극을 증착하기 위해 e-beam evaporator를 사용하여 Ni/Au를 각각 $50\;{\AA}$씩 증착한 후 오믹 특성을 향상시키기 위하여 $500^{\circ}C$에서 열처리를 해주었다. 그리고 Ti/Au($300/4000{\AA}$) 메탈을 사용하여 p-전극과 n-전극을 형성하였다. Passivation을 하지 않은 경우에는 reverse leakage current가 -5V 에서 $-1.9{\times}10-8$ A 로 측정되었고, SiO2와 Si3N4을 passivation으로 이용한 경우에는 각각 $8.7{\times}10-9$과 $-2.2{\times}10-9$로 측정되었다. Fig. 1 에서 보면 알 수 있듯이 5 nm의 Al2O3 film을 passivation layer로 이용할 경우 passivation을 하지 않은 경우를 제외한 다른 passivation 경우보다 reverse leakage current가 약 2 order ($-3.46{\times}10-11$ A) 정도 낮게 측정되었다. 그 이유는 CVD 공정보다 짧은 ALD의 공정시간과 더 낮은 RF Power로 인해 plasma damage를 덜 입게 되어 나타난 것으로 생각된다. Fig. 2 에서는 Al2O3로 passivation을 한 소자의 forward voltage가 SiO2와 Si3N4로 passivation을 한 소자보다 각각 0.07 V와 0.25 V씩 낮아지는 것을 확인할 수 있었다. 또한 Fig. 3 에서는 Al2O3로 passivation을 한 소자의 output power가 SiO2와 Si3N4로 passivation을 한 소자보다 각각 2.7%와 24.6%씩 증가한 것을 볼 수 있다. Output power가 증가된 원인으로는 향상된 forward voltage 및 reverse에서의 leakage 특성과 공기보다 높은 Al2O3의 굴절률이 광출력 효율을 증가시켰기 때문인 것으로 판단된다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.251-251
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• 2016

For several decades, industrial processes consume a huge amount of raw water for various objects that consequently results in the generation of large amounts of wastewater. Wastewaters are consisting of complex mixture of different inorganic and organic compounds and some of them can be toxic, hazardous and hard to degrade. These effluents are mainly treated by conventional technologies such are aerobic and anaerobic treatment and chemical coagulation. But, these processes are not suitable for eliminating all hazardous chemical compounds form wastewater and generate a large amount of toxic sludge. Therefore, other processes have been studied and applied together with these techniques to enhance purification results. These include photocatalysis, absorption, advanced oxidation processes, and ozonation, but also have their own drawbacks. In recent years, electrochemical techniques have received attention as wastewater treatment process that could be show higher purification results. Among them, boron doped diamond (BDD) attract attention as electrochemical electrode due to good chemical and electrochemical stability, long lifetime and wide potential window that necessary properties for anode electrode. So, there are many researches about high quality BDD on Nb, Ta, W and Si substrates, but, their application in effluents treatment is not suitable due to high cost of metal and low conductivity of Si. To solve these problems, Ti has been candidate as substrate in consideration of cost and property. But there are adhesion issues that must be overcome to apply Ti as BDD substrate. Al, Cu, Ti and Nb thin films were deposited on Ti substrate to improve adhesion between substrate and BDD thin film. In this paper, BDD films were deposited by hot filament chemical vapor deposition (HF-CVD) method. Prior to deposition, cleaning processes were conducted in acetone, ethanol, and isopropyl alcohol (IPA) using sonification machine for 7 min, respectively. And metal layer with the thickness of 200 nm were deposited by DC magnetron sputtering (DCMS). To analyze microstructure X-ray diffraction (XRD, Bruker gads) and field emission scanning electron microscopy (FE-SEM, Hitachi) were used. It is confirmed that metal layer was effective to adhesion property and improved electrode property. Electrochemical measurements were carried out in a three electrode electrochemical cell containing a 0.5 % H2SO4 in deionized water. As a result, it is confirmed that metal inter layer heavily effect on BDD property by improving adhesion property due to suppressing formation of titanium carbide.

• Journal of the Korean Ceramic Society
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• v.41 no.10 s.269
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• pp.728-734
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• 2004

The effect of microstructure of WC-Co substrates which have different WC grain sizes from submicron to 5 $\mu$m on the diamond-substrate adhesion strength was investigated. The substrates were pre-treated by two methods : chemical etching with Murakami's solution and subsequently with $H_2SO_4$, and thermal heat-treatment. The adhesion strength was estimated by degree of peeling after Rockwell indentation. Diamond films of 20 $\mu$m thickness deposited on the heat-treated substrates showed an excellent adhesion strength at the load of 100 kg, which ascribed to the large and elongated WC grains. However, the cutting edge of insert was deformed after heat treatment and the surface morphology of heat treated substrate strongly affected on the surface roughness of the deposited diamond films. On the contrary, the diamond film of 10 $\mu$m in thickness on the chemically etched substrates of average WC grain size over 2 $\mu$m showed good adhesion strength enough not to peel-off under a load of 60 kg. Especially, the substrate of average WC grain size over 5 $\mu$m exhibited much improved reliability of adhesion comparing with the substrate of average grain size under 2 $\mu$m. No substrate deformation was observed in this case after the chemical etching, which is more advantageous and more practical in terms of precious machining than the heat treatment case.

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.131-138
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• 1997

Silicon carbide films were chemically vapor deposited onto graphite substrates using MTS(Ch3SiCl3) as a source and Ar or H2 as a diluent gas. The experiments were performed at a fixed condition such as a de-position temperature of 130$0^{\circ}C$, a total pressure of 10 torr, and a flow rate of 100 sccm for each MTS and carrier gas. The purpose of this study is to consider the variation of the growth behavior with the addition of each diluent gas. It is shown that the deposition rate leads to maximum value at 200 sccm addition ir-respective of diluent gases and the deposition rate of Ar addition is faster than that of H2 one. It seems that these characteristics of deposition rate are due to varying interrelationship between boundary layer thick-ness and the concentration of a source with each diluent gas addition, when overall deposition rate is con-trolled by mass transport kinetics. The preferred orientation of (220) plane was maintained for the whole range of Ar addition. However, above 200 sccm addition, especially that of (111) plane was more increased in proportion to H2 addition. Surface morphologies of SiC films were the facet structures under Ar addition, but those were gradually changed from facet to smooth structures with H2 addition. Surface roughness be-came higher in Ar, but it became lower in H2 with increasing the amount of diluent gas.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.3
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• pp.25-29
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• 2014

Plasma organic thin film for PCB surface finish is a potential replacement of the conventional PCB finishes because of environment-friendly process, high corrosion-resistance and long shelf life over 1 year. In this study, solder joint properties of the plasma organic surface finish were estimated and compared with OSP surface finish. The plasma surface finish was deposited by chemical vapor deposition from fluorine-based precursors. The thickness of the plasma organic coating was 20 nm. Sn-3.0Ag-0.5Cu (SAC305) solder was used as solder joint materials. From a salt spray test, the plasma organic coating had higher corrosion resistance than the OSP surface finish. The spreadability of SAC305 on plasma organic coating was higher than that on OSP surface finish. SEM and TEM micrographs showed that the interfacial microstructure of the plasma surface finish sample were similar to that of the OSP sample. Solder joint strength of the plasma finish sample was also similar to that of the OSP finished sample.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.274-274
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• 2014

금속칼코게나이드 화합물중 하나인 $MoS_2$는 초저 마찰계수의 금속성 윤활제로 널리 사용되고 있으며 흑연과 비슷한 판상 구조를 지니고 있어 기계적 박리법을 통한 그래핀의 발견 이후 2차원 박막 합성법에 대한 활발한 연구가 진행되고 있다. 최근 다양한 응용이 진행 중인 그래핀의 경우 높은 전자이동도, 기계적 강도, 유연성, 열전도도 등 뛰어난 물리적 특성을 지니고 있으나 zero-bandgap으로 인한 낮은 on/off ratio는 thin film transistor (TFT), 논리회로(logic circuit) 등 반도체 소자 응용에 한계가 있다. 하지만 $MoS_2$는 벌크상태에서 약 1.2 eV의 indirect band-gap을 지닌 반면 단일층의 경우 1.8 eV의 direct-bandgap을 나타내고 있다. 또한 단일층 $MoS_2$를 이용하여 $HfO_2/MoS_2/SiO_2$ 구조의 트랜지스터를 제작하였을 때 $200cm^2/v^{-1}s^{-1}$의 높은 mobility와 $10^8$ 이상의 on/off ratio 나타낸다는 연구가 보고되어 있어 박막형 트랜지스터 응용을 위한 신소재로 주목을 받고 있다. 한편 2차원 $MoS_2$ 박막을 합성하기 위한 대표적인 방법인 기계적 박리법의 경우 고품질의 단일층 $MoS_2$ 성장이 가능하지만 대면적 합성에 한계를 지니고 있으며 화학기상증착법(CVD)의 경우 공정 gas의 분해를 위한 높은 온도가 요구되므로 박막형 투명 트랜지스터 응용을 위한 플라스틱 기판으로의 in-situ 성장이 어렵기 때문에 이를 보완할 수 있는 $MoS_2$ 박막 합성 공정 개발이 필요하다. 특히 Plasma enhanced chemical vapor deposition (PECVD) 방법은 공정 gas가 전기적 에너지로 분해되어 chamber 내부에서 cold-plasma 형태로 존 재하기 때문에 박막의 저온성장 및 대면적 합성이 가능하며 고진공을 바탕으로 합성 중 발생하는 오염 요소를 효과적으로 제어할 수 있다. 본 연구에서는PECVD를 이용하여 plasma power, 공정압력, 공정 gas의 유량 등 다양한 공정 변수를 조절함으로써 저온, 저압 조건하에서의 $MoS_2$ 박막 성장 가능성을 확인하였으며 전구체로는 Mo 금속과 $H_2S$ gas를 사용하였다. 또한 향후 flexible 소자 응용을 위한 플라스틱 기판의 녹는점을 고려하여 공정 온도는 $300^{\circ}C$ 이하로 설정하였으며 합성된 $MoS_2$ 박막의 두께 및 화학적 구성은 Raman spectroscopy를 이용하여 확인 하였다. 공정온도 $200^{\circ}C$와 $150^{\circ}C$에서 성장한 $MoS_2$ 박막의 Raman peak의 경우 상대적으로 낮은 공정온도로 인하여 Mo와 H2S의 화학적 결합이 감소된 것을 관찰할 수 있었고 $300^{\circ}C$의 경우 약 $26{\sim}27cm^{-1}$의 Raman peak 간격을 통해 5~6층의 $MoS_2$ 박막이 형성 된 것을 확인할 수 있었다.