• Transactions on Electrical and Electronic Materials
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• v.5 no.4
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• pp.158-160
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• 2004

BiSrCaCuO thick films were fabricated by plasma enhanced chemical vapor deposition, and the crystallinity and the superconducting properties were investigated. The superconductivity was achieved at 20 K with an onset temperature of around 90 K in the film prepared at 72$0^{\circ}C$. From X ray diffraction analysis, the main superconducting phase in the films was the low Tc phase at 700∼75$0^{\circ}C$ and the high Tc phase at 750 ∼ 80$0^{\circ}C$.

• Proceedings of the Membrane Society of Korea Conference
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• 1994.04a
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• pp.28-28
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• 1994

세라믹 분림가은 세라믹 고유의 열적, 기계적 특성으로 인해 유기질막이 사용되어질 수 없는 작업환경에서도 사용가능하다는 장점이 있다. 기존의 세라믹 분리막 제조방법으로는 졸겔법등이 있는데, 최근들어 새롭게 주목받고 있는 것이 화학기상중착법 (chemical vapor deposition)에 의한 제조이다. CVD 법은 막의 두께를 비교적 정확하게 조절할 수 있고, 균일한 두께의 막을 제조할 수 있다는 장점이 있다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.391-392
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• 2012

Graphene is a perfectly two-dimensional (2D) atomic crystal which consists of sp2 bonded carbon atoms like a honeycomb lattice. With its unique structure, graphene provides outstanding electrical, mechanical, and optical properties, thus enabling wide variety of applications including a strong potential to extend the technology beyond the conventional Si based electronic materials. Currently, the widespread application for electrostatically switchable devices is limited by its characteristic of zero-energy gap and complex process in its synthesis. Several groups have investigated nanoribbon, strained, or nanomeshed graphenes to induce a band gap. Among various techniques to synthesize graphene, chemical vapor deposition (CVD) is suited to make relatively large scale growth of graphene layers. Direct growth of graphene on hexagonal boron nitride (h-BN) using CVD has gained much attention as the atomically smooth surface, relatively small lattice mismatch (~1.7％) of h-BN provides good quality graphene with high mobility. In addition, induced band gap of graphene on h-BN has been demonstrated to a meaningful value about ~0.5 eV.[1] In this paper, we report the synthesis of grpahene / h-BN bilayer in a chemical vapor deposition (CVD) process by controlling the gas flux ratio and deposition rate with temperature. The h-BN (99.99％) substrate, pure Ar as carrier gas, and $CH_4$ are used to grow graphene. The number of graphene layer grown on the h-BN tends to be proportional to growth time and $CH_4$ gas flow rate. Epitaxially grown graphene on h-BN are characterized by scanning electron microscopy, atomic force microscopy, and Raman spectroscopy.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1997.04a
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• pp.69-73
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• 1997

Microwave Plasma assisted CVD (Chemical Vapor Deposition) and DC Plasma CVD were used to prepare thin and thick diamond film, respectively. Diamond coated silicon nitride and fiee standing diamond thick film were eroded by silicon carbide particles. The velocity of the solid particle was about 220m/sec. Phase transformation and the other crack formation were investigated by using Raman spectroscopy and microscopy.

• Korean Journal of Optics and Photonics
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• v.32 no.3
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• pp.114-119
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• 2021

A large-area graphene sheet has been successfully grown on a copper-foil substrate by chemical vapor deposition (CVD) for industrial use. To screen out unsatisfactory graphene films as quickly as possible, noninvasive optical characterization in reflection geometry is necessary. Based on the optical conductivity of graphene, developed by the single-electron tight-binding method, we have investigated the optical-reflectance contrast. Depending on the four independent control parameters of layer number, chemical potential, hopping energy, and temperature, the optical-reflectance contrast can change dramatically enough to reveal the quality of the grown graphene sheet.

• Journal of the Korean Ceramic Society
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• v.32 no.4
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• pp.419-428
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• 1995

Polycrystalline silicon carbide (SiC) thick films were depostied by low pressure chemical vapor deposition (LPCVD) using CH3SiCl3 (MTS) and H2 gaseous mixture onto isotropic graphite substrate. Effects of deposition variables on the SiC film were investigated. Deposition rate had been found to be surface-reaction controlled below reactor temperature of 120$0^{\circ}C$ and mass-transport controlled over 125$0^{\circ}C$. Apparent activation energy value decreased below 120$0^{\circ}C$ and deposition rate decreased above 125$0^{\circ}C$ by depletion effect of the reactant gas in the direction of flow in a horizontal hot wall reactor. Microstructure of the as-deposited SiC films was strongly influenced by deposition temperature and position. Microstructural change occurred greater in the mass transport controlled region than surface reaction controlled region. The as-deposited SiC layers in this experiment showed stoichiometric composition and there were no polytype except for $\beta$-SiC. The preferred orientation plane of the polycrystalline SiC layers was (220) plane at a high reactant gas concentration in the mass transfer controlled region. As depletion effect of reactant concentration was increased, SiC films preferentially grow as (111) plane.

• Transactions on Electrical and Electronic Materials
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• v.3 no.3
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• pp.14-17
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• 2002

The HDP (High Density Plasma) CVD process consists of a simultaneous sputter etch and chemical vapor deposition. As CMOS process continues to scale down to sub- quarter micron technology, HDP process has been widely used fur the gap-fill of small geometry metal spacing in inter-metal dielectric process. However, HBP CVD system has some potential problems including plasma-induced damage. Plasma-induced gate oxide damage has been an increasingly important issue for integrated circuit process technology. In this paper, thin gate oxide charge damage caused by HDP deposition of inter-metal dielectric was studied. Multiple step HDP deposition process was demonstrated in this work to prevent plasma-induced damage by introducing an in-situ top SiH$_4$ unbiased liner deposition before conventional deposition.

• Composites Research
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• v.24 no.4
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• pp.23-28
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• 2011

Recently CFRP laminate joints process by bolts and nets are developed rapidly in aircraft industries. However, there are serious drawback during jointing process. Many hole processes are needed for the manufacturing and structural applications using composite materials. Generally, very durable polycrystalline crystalline diamond (PCD) drill has been used for the CFRP hole process. However, due to the expensive price and slow process speed, chemical vapor deposition (CVD) diamond drill has been used increasingly which are relatively-low durability but easily-adjustable process speed via drill shape change and price is much lower. In this study, the comparison of hole process between PCD and CVD diamond coated drills was done. First of all, CFRP hole processbility was evaluated using the equations of hole processing conditions (feed amount per blade, feed speed). The comparison on thermal damage occurring from the CFRP specimen was also studied during drilling process. Empirical equation was made from the temperature photo profile being taken during hole process by infrared thermal camera. In addition, hole processability was compared by checking hole inside condition upon chip exhausting state for two drills. Generally, although the PCD can exhibit better hole processability, hole processing speed of CVD diamond drill exhibited faster than PCD case.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.7-11
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• 1997

SiC/C functionally gradient material (FGMs) were formed on graphite substrates by hot-wall chemical vapor deposition (CVD) technique using the SiCl$_4$-C$_3$H8-H$_2$ chemistry. Thermochemical equilibrium calculations were carried out to investigate the deposition process. The effect of process variables on the deposition yield and the SiC/C ratio in deposited layers was studied in detail. Calculated results showed a reasonable agreement with the experiment in a qualitative sense. SiC/C FGMs with excellent mechanical and thermal properties could be successfully formed on graphite substrates by carefully controlling the compositions in the deposited layers.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.12-14
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• 2005

Inductively Coupled Plasma Chemical Vapor Deposition(ICP-CVD)를 이용하여 공정온도 $150^{\circ}C$에서 Nanocrystalline silicon (nc-Si) 박막을 증착하였다. 실험에서 헬륨(He)가스, 수소($H_2$)가스 그리고 헬륨(He)과 수소($H_2$)의 혼합가스로 희석한 사일렌($SiH_4$)을 반응가스로 이용하였다. 이 혼합가스는 3sccm의 사일렌($SiH_4$)에 헬륨(He)과 수소($H_2$)의 주입율을 20sccm에서부터 60sccm까지 변화시켜 조건을 달리하여 사용했다. 증착한 Nc-Si 박막을 X-ray diffraction (XRD)으로 분석하여 각각의 조건에 대한 Nc-Si 박막의 속성을 연구하였다. 헬륨(He) 또는 수소($H_2$) 혼합가스의 주입율이 커지면서 <111>과 <222>의 최고점(peak)이 더 높아졌으며 결정화 되지 않고 비결정질로 남아 있는 성장층(incubation layer)이 얇아졌다. 이 결과는 nc-Si를 증착할 때 사용한 수소($H_2$) 플라즈마와 헬륨(He) 플라즈마의 효과로 설명할 수 있다. 실험을 통해 ICP-CVD로 증착한 nc-Si 박막을 박막 전계효과트랜지스터 (TFT)에서 우수한 특성의 전자수송층(active layer)으로 사용할 수 있는 것을 확인하였다.