• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.509-509
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• 2011

Superhydrophobic surfaces on alloyed steels were fabricated with a non-conventional method of plasma etching and subsequent water immersion procedure. High aspect ratio nanopatterns of nanoflake or nano-needle were created on the steels with various Cr content in its composition. With CF4 plasma treatment in radio-frequence chemical vapor deposition (r.-f. CVD) method, steel surfaces were etched and fluorinated by CF4 plasma, which induced the nanopattern evolution through the water immersion process. It was found that fluorine ion played a role as a catalyst to form nanopatterns in water elucidated with XPS and TEM analysis. The hierarchical patterns in micro- and nano scale leads to superhydrophobic properties on the surfaces by deposition of a hydrophobic coating with a-C:H:Si:O film deposited with a gas precursor of hexamethlydisiloxane (HMDSO) with its lower surface energy of 24.2 mN/m, similar to that of curticular wax covering lotus surfaces. Since this method is based on plasma dry etching & coating, precise patterning of surface texturing would be potential on steel or metal surfaces. Patterned hydrophobic steel surfaces were demonstrated by mimicking the Robinia pseudoacacia or acacia leaf, on which water was collected from the humid air using a patterned hydrophobicity on the steels. It is expected that this facile, non-toxic and fast technique would accelerate the large-scale production of superhydrophobic engineering materials with industrial applications.

• 한국표면공학회지
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• 제53권3호
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• pp.109-115
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• 2020

In this study, polycrystalline diamond was synthesized by chemical vapor deposition (CVD). Diamond films were deposited on a-plane sapphire substrates while changing the concentration of methane for hydrogen (CH₄/H₂), and the concentrations of methane were 0.25, 0.5, 1, 2, 3 and 4 vol%, respectively. Crystallinity and nucleation density according to changes in methane concentration were investigated. At this time, the discharge power, vacuum pressure, and deposition time were kept constant. In order to deposit polycrystalline diamond, the sapphire substrate was etched with sulfuric acid and hydrogen peroxide (ratio 3:7), and the sapphire surface was polished for 30 minutes with 100 nm-sized nanodiamond particles. The deposited diamond thin film was analyzed by a scanning electron microscope (SEM), a Raman spectra, Atomic force microscope (AFM) and an X-ray diffractometer (XRD). By controlling the ratio of methane to hydrogen and performing appropriate pre-treatment conditions, a polycrystalline diamond thin film having excellent crystallinity and nucleation density was obtained.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1339-1340
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• 2007

본 연구에서는 이종 차원 나노선과 나노입자의 결합에 따른 단일 나노선 소자의 전기적 특성 및 메모리 효과를 연구하였다. 열증착법으로 성장 된 p 형 Si 나노선에 Atomic Layer Deposition (ALD) 방법으로 10nm의 $Al_{2}O_{3}$를 증착한 후 Low Precensure - Chemical Vapor Deposition (LP-CVD)를 이용하여 Polycrystalline Sicon(Poly-Si)을 Si 나노선 위에 5nm 증착하고 습식 에칭법을 이용하여 poly Si 내의 $SiO_x$를 제거하여 Si 나노입자를 Si 나노선 위에 형성시켰다. 그 후 포토리소그래피 공정을 이용하여 Top gate 형태의 나노선-나노입자 이종결합 Field-Effect Transistor (FET) 소자를 제작하여 게이트 전압에 따른 드레인 전류-전압($I_{DS}-V_{DS}$)의 변화를 측정하여 나노선의 전기 소자로서의 특성을 확인하고, 게이트 전압을 양방향으로 swing 하면서 인가하여 $I_{DS}$ 전류 특성이 변화하는 것을 통해 메모리 효과를 조사하였다. 또한 나노입자의 결합이 게이트 전압의 인가 시간에 따라 드레인 전류에 영향을 미치는 것을 확인하여 메모리 소자로서의 가능성을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.100-100
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• 2010

Hydrophilic $TiO_2$ films were deposited on slide glasses using titanium tetraisopropoxide (TTIP) as a precursor by metal-organic chemical vapor deposition (MOCVD). The temperature of substrate was $400^{\circ}C$ and the temperatures of precursor were kept at $75^{\circ}C$ (sample A) and $60^{\circ}C$ (sample B) during the $TiO_2$ film growth. The deposited $TiO_2$ films were characterized by contact angle measurement and uv/vis spectroscopy. The result show that sample B has very low contact angle of almost zero due to superhydrophilic $TiO_2$ surface and transmittance is $76.85%{\pm}1.47%$ at the range of 400 - 700 nm. So, this condition is very optimal for hydrophilic $TiO_2$ film deposition. However, when the temperature of precursor is lower is lower than $50^{\circ}C$ or higher than $75^{\circ}C$, $TiO_2$ could not be deposited on the substrate and cloudy $TiO_2$ film was formed due to low precursor temperature and the increase of surface roughness, respectively.

• Carbon letters
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• 제6권1호
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• pp.31-40
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• 2005

The carbon nanofibers (CNFs) were synthesized through the catalytic decomposition of hydrocarbons in a quartz tube reactor. The CNFs prepared from $C_3H_8$ at $550^{\circ}C$ was selected as the purification sample due to the higher content of impurity than that prepared from other conditions. In this study, we carried out the purification of CNFs by oxidation in air or carbon dioxide after acid treatment, and investigated the influence of purification parameters such as kind of acid, concentration, oxidation time, and oxidation temperature on the structure of CNFs. The metal catalysts could be easily eliminated from the prepared CNFs by liquid phase purification with various acids and it was verified by ICP analysis, in which, for example, Ni content decreased from 2.51% to 0.18% with 8% nitric acid. However, the particulate carbon and heterogeneous fibers were not removed from the prepared CNFs by thermal oxidation in air and carbon dioxide. This result can be explained by that the direction of graphene sheet in CNFs is vertical to the fiber axis and the CNFs are oxidized at about the similar rate with the impurity carbon.

• 열처리공학회지
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• 제33권1호
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• pp.20-24
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• 2020

Single crystal diamonds are in great demand in such fields as mechanical, electronic applications and optoelectronics. Large area single crystal diamonds are attracting attention in future industries for mass production and low cost. In this study, hot filament CVD (HFCVD) is used to grow large area single crystal diamond. However, the growth rate of large area single crystal diamond using HFCVD is known to be very low. The goal of this study is to use single crystal diamond substrates in HFCVD with methane-hydrogen gas mixtures to increase the growth rate of single crystal diamond and to optimize the conditions by analysing the effects of deposition conditions for high quality crystallinity. The deposition pressure, the ratio of CH₄/H₂ gas, the substrate temperature and the distance between the filament and the substrate were optimized. The sample used a 4×4 (mm²) size single crystal diamond substrate (100), the CH₄/H₂ gas ratio was fixed at 5%, the substrate temperature was synthesized to about 1000℃. At this time, the deposition pressure was changed to three types of 50, 75, 85 Torr and deposited. Finally, optimization was investigated under pressure conditions to analyse the growth rate and quality of single crystal diamond.

• 한국재료학회지
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• 제14권2호
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• pp.90-93
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• 2004

Silicon dioxide thin films were deposited on p-type Si (100) substrates by atomic layer deposition (ALD) method using alternating exposures of $SiH_2$$Cl_2$ and $O_3$ at $300^{\circ}C$. $O_3$ was generated by corona discharge inside the delivery line of $O_2$. The oxide film was deposited mainly from $O_3$ not from $O_2$, because the deposited film was not observed without corona discharge under the same process conditions. The growth rate of the deposited films increased linearly with increasing the exposures of $SiH_2$$Cl_2$ and $O_3$ simultaneously, and was saturated at approximately 0.35 nm/cycle with the reactant exposures over $3.6 ${\times}$ 10^{9}$ /L. At a fixed $SiH_2$$Cl_2$ exposure of $1.2 ${\times}$ 10^{9}$L, growth rate increased with $O_3$ exposure and was saturated at approximately 0.28 nm/cycle with $O_3$ exposures over$ 2.4 ${\times}$ 10^{9}$ L. The composition of the deposited film also varied with the exposure of $O_3$. The [O]/[Si] ratio gradually increased up to 2 with increasing the exposure of $O_3$. Finally, the characteristics of ALD films were compared with those of the silicon oxide films deposited by conventional chemical vapor deposition (CVD) methods. The silicon oxide film prepared by ALD at $300^{\circ}C$ showed better stoichiometry and wet etch rate than those of the silicon oxide films deposited by low-pressure CVD (LPCVD) and atmospheric-pressure CVD (APCVD) at the deposition temperatures ranging from 400 to $800^{\circ}C$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.344-344
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• 2013

칩의 크기가 감소함에 따라 RC (Resistance, Capacitance) 지연, 전력소비증가 및 신호잡음 등이 문제가 되어왔다. RC지연 문제는 배선에 알루미늄 보다 비저항이 낮은 구리를 사용하고 절연막으로 유전상수가 낮은 물질을 사용하여 개선될 수 있다. 이와 같은 맥락에서 점차 저유전상수 박막의 필요성은 증가하고 있다. 그러므로 이를 개선하기 위해 저 유전상수 값을 가지는 물질을 개발 혹은, UV나 플라즈마 그리고 열을 이용하여 처리하는 연구가 절실히 요구되고 있으며, 현재 많은 연구가 진행되고 있다. 이 논문에서 저유전박막은 HDP-CVD (High Density Plasma Chemical Vapor Deposition) 시스템에서 (CyOz)-SiHx와 O2의 비율을 각각 변화시키면서 증착 되었다. (CyOz)-SiHx와 O2의 비율은 60/150, 60/180, 60/210, 60/240로 증가하면서 증착하였다. 그리고 surface profilometer을 이용하여 박막의 증착율을 측정하고 LCR meter를 이용하여 정전용량을 측정하여 유전상수 값을 얻었다. 박막의 화학적 조성과 구조는 FTIR (Fourier Transform Infrared Spectroscopy)로 측정하였다. 박막의 유동 특성은 SEM (Scanning electron microscope) 이미지로 살펴보았다.

• 한국산학기술학회논문지
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• 제10권9호
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• pp.2390-2395
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• 2009

공간속도 $30000\;hr^{-1}$에서 Fe/ZSM-5 촉매의 $SiO_2/Al_2O_3$ 몰비가 감소함에 따라 $NO_x$ 제거 수율은 증가하였다. Fe/ZSM-5는 반응 온도 $350^{\circ}C$ - $400^{\circ}C$ 사이에서 최대 50%의 질소 산화물 제거 수율을 나타내지만 높은 CO 발생량이 관찰된다. Fe/ZSM-5 촉매에서 생성되는 CO를 제거하기 위하여 Co-Pt/ZSM-5 촉매를 직렬로 연속하여 사용하였으며, 공간속도 $30000\;hr^{-1}$, 반응 온도 $250^{\circ}C$ 조건에서 90% 이상의 질소 산화물과 CO 제거 수율을 나타내었다.

• Bulletin of the Korean Chemical Society
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• 제17권7호
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• pp.637-642
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• 1996

Preparation and properties of potential CVD (Chemical Vapor Deposition) precursors for the TiO2, a major component of the perovskite materials such as PT, PLT, PZT, and PLZT were investigated. Reactions between β-diketones and TiMe3, formed in situ failed to produce stable Ti(β-diketonate)3 complexes but a stable purple solid, characterized as (OTi(BPP)2)2 (BPP=1,3-biphenyl-1,3-propanedione) was obtained when BPP was used. Several new Ti(Oi-Pr)2(β-diketonate)2 complexes with aromatic or ring substituents were synthesized by the substitution reaction of Ti(OiPr)4by β-diketones and characterized with 1H NMR, IR, ICP, and TGA. Solid complexes such as Ti(Oi-Pr)2(BAC)2 (BAC=1.-phenyl-2,4-pentanedione), Ti(Oi-Pr)2(BPP)2, Ti(Oi-Pr)2(1-HAN)2 (1-HAN=2-hydroxy-1-acetonaphthone), Ti(Oi-Pr)2(2-HAN)2 (2-HAN=1-hydroxy-2-acetonaphthone), Ti(Oi-Pr)2(ACCP)2 (ACCP=2-acetylcyclopentanone), and Ti(Oi-Pr)2(HBP)2 (HBP=2-hydroxybenzophenone) were found to be stable toward moisture and air. Ti(Oi-Pr)2(ACCP)2 and Ti(Oi-Pr)2(HBP)2 were proved to have lower melting points and higher decomposition temperatures. However, these complexes are thermally stable and pyrolysis under an inert atmosphere resulted in incomplete decomposition. Ti(Oi-Pr)2(DPM)2 (DPM=dipivaloylmethane) and Ti(Oi-Pr)2(HFAA)2 (HFAA=hexafluoroacetylacetone) were sublimed substantially during the thermal decomposition. Pyrolysis mechanism of these complexes are dependent on type of β-diketone but removal of Oi-Pr ligands occurs before the decomposition of β-diketonate ligands.