• Journal of the Semiconductor & Display Technology
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• v.11 no.1
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• pp.61-65
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• 2012

In this study, for use of carbon nanotubes (CNTs) as a cold cathode of x-ray tubes, we examine the effects of selective growth of CNTs on their field emission properties and long-term stability. The selective growth of CNTs was performed by selectively etching the catalyst layer which was used for CNTs' nucleation. CNTs were grown on conical-type tungsten substrates using an inductively-coupled plasma chemical vapor deposition system. For all the grown CNTs, their morphologies and microstructures were analyzed by field-emission scanning electron microscope and Raman spectroscopy. The electron-emission properties of CNTs and the long-term stability of emission currents were measured and characterized according to the CNTs' growth position on the substrate.

• Journal of the Korean institute of surface engineering
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• v.44 no.2
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• pp.39-43
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• 2011

Amorphous silicon thin film was deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD). Each films were prepared in different dilution in the chamber gas. As a result, silicon crystallites and crystal volume fraction was increased with raising the hydrogen dilution in the gas and optical band gap was decreased. Increasement of the hydrogen contents in the chamber affected on surface roughness. In this study, thickness and surface roughness of the a-Si thin film by different hydrogen dilution was investigated by various techniques.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1402-1404
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• 2009

The silicon nitride films for gate dielectric were deposited by catalytic chemical vapor deposition at low temperature (${\leq}200^{\circ}C$). The mixture of $SiH_4$, $NH_3$ and $H_2$ was used as source gases. The current-voltage (I-V) and the capacitance-voltage (C-V) characteristics of the films were measured. The breakdown voltage and the flat band voltage shift of samples were improved by increase of the $NH_3$ contents and $H_2$ dilution ratio. The defect states were analyzed by photoluminescence (PL) spectra. As the defect states decreased, the breakdown voltage and the flat band voltage shift increased.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.790-793
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• 2007

This study investigated the effect of $H_2$ upon the growth of CNTs by changing the ratios of H2 to Ar during the growth using $C_2H_2$. With higher contents of $H_2$ in Ar, CNTs became longer and thinner, resulting in their higher aspect ratios.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.2
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• pp.212-216
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• 2004

In this paper, we have fabricated a triode field emitter using carbon nanotubes (CNTs) directly grown by thermal chemical vapor deposition(CVD) method as an electron omission source. Vertically aligned CNTs have been grown in the center of the gate hole, to the size of 1.5 ${\mu}{\textrm}{m}$ in diameter, with help of a sacrificial layer of a type generally used in metal tip process. By the method of tilling the substrate, we made CNTs emitters both with and without SiO$_2$layer, a sidewall protector, deposited on sidewall of gate. After that we researched the electrical characteristics about two types of emitters. In effect, a sidewall protector can enhance the electrical characteristics by suppressing the problem of short circuits between the gate and the CNTs. The leakage current of an emitter with a sidewall protector is approximately sevenfold lower than that of an emitter without it at a gate voltage of 100 V.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2003.12a
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• pp.1-6
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• 2003

Flow modulation chemical vapor deposition process has been reported as an alternative way to obtain low resistivity, low residual chlorine content and good step-coverage titanium nitride film. Flow and concentration characteristics in a vertical FMCVD reactor are analyzed by using computational fluid dynamics method. The results show that 1.0 second as Cl reduction period is too short and there is still $TiCl_4$ gas above the holder at the end of the period. Time variation of $TiCl_4$ gas concentration on the holder shows that at least 3.0 second is necessary as Cl reduction time for the sake of film characteristics.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.6
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• pp.312-315
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• 2004

The monolayer of oxygen atoms sandwiched between the adjacent nanocrystalline silicon layers was formed by ultra high vacuum-chemical vapor deposition (UHV-CVD). This multilayer Si-O structure forms a new type of superlattice, semiconductor-atomic superlattice (SAS). According to the experimental results, high-resolution cross-sectional transmission electron microscopy (HRTEM) shows epitaxial system. Also, the current-voltage (Ⅰ-Ⅴ) measurement results show the stable and good insulating behavior with high breakdown voltage. It is apparent that the system may form an epitaxially grown insulating layer as possible replacement of silicon-on-insulator (SOI), a scheme investigated as future generation of high efficient and high density CMOS on SOI.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.452-455
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• 2000

Diamond thin films were synthesized on WC-Co substrate at various experimental parameters using 13.56MHz RF PACVD(radio frequency plasma-assisted chemical vapor deposition). In order to increase the nucleation density, the WC-Co substrate was polished with 3$\mu\textrm{m}$ diamond paste. And the WC-Co substrate was pretreated in HNO$_3$: H$_2$O = 1:1 and O$_2$ plasma. In H$_2$-CH$_4$gas mixture, the crystallinity of thin film increased with decreasing CH$_4$concentration at 800W discharge power and 20torr reaction pressure. In H$_2$-CH$_4$-O$_2$gas mixture, the crystallinity of thin film increased with increasing O$_2$concentration at 800W discharge power, 20torr reaction pressure and 4% CH$_4$concentration.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.266.2-266.2
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• 2013

According to advanced nanotechnology, the nanostructured materials with various kinds and shape are synthesized easily or produced by process. Recently, researches about interaction between the nanostructured materials and biological system have been progressed actively. The surface topography may influence cellular responses, for example cell adhesion, cell morphology. In this work, we synthesized vertically aligned silicon nanowires (SiNWs) on the Au-covered Si(111) wafer by chemical vapor deposition (CVD) method. We accomplished to control of the SiNWs diameter by regulating thickness of Au film such as 1 nm and 10 nm. These substrates did not isolate cells and just provided surface topography for cell culture. Human Embryonic Kidney 293T cells (HEK 293T cells) were cultured on these substrates for 2 days. We studied the nanotopographical effects on cell morphology, adhesion, and growth which are evaluated on each SiNWs substrate comparing bare glass as control.

• Journal of the Semiconductor & Display Technology
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• v.17 no.4
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• pp.91-96
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• 2018

In this study temperature distribution and gas flow inside a planetary type reactor in which a number of satellites on a spinning susceptor were rotating were analyzed using numerical simulation. Effects of flow rates on gas flow and temperature distribution were investigated in order to obtain design parameters. The commercial computational fluid dynamics software CFD-ACE+ was used in this study. The multiple-frame-of-reference was used to solve continuity, momentum and energy conservation equations which governed the transport phenomena inside the reactor. Kinetic theory was used to describe the physical properties of gas mixture. Effects of the rotation speed of the satellites was clearly seen when the inlet flow rate was small. Thickness of the boundary layer affected by the satellites rotation became very thin as the flow rate increased. The temperature field was little affected by the incoming flow rate of precursors.