• Membrane Journal
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• v.20 no.3
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• pp.210-216
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• 2010

The hydrogen permselective membrane were prepared by chemical vapor deposition (CVD) aiming at the applications to hydrogen iodide decomposition in the thermochemical IS process, and it was evaluated for the possibility as a separation membrane. An electron probe X-ray microanalyzer (EPMA) and SEM picture were used to analyze the morphology and structure of the prepared membranes. It was confirmed that Zr-Si-O layer exist in the surface of the prepared membrane using zirconia coated support. Single-component permeance to $H_2$ and $N_2$ were measured at $300{\sim}600^{\circ}C$. Hydrogen permeance through the Z-1 membrane at a permeation temperature of $600^{\circ}C$ was about $1{\times}10^{-7}\;mol{\cdot}Pa^{-1}{\cdot}m^{-2}{\cdot}s^{-1}$. The selectivities of $H_2/N_2$ at $600^{\circ}C$ were 5.0 and 5.75 for Z-1 and Z-2 membrane, respectively.

• 전기의세계
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• v.43 no.11
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• pp.15-21
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• 1994

레이저의 첨단기술에의 응용은, 의학, 생물학, 화학, 물리계측, 가공, 통신, 정보처리 등 다분야에 걸쳐, 수 mW에서 수 십 kW까지의 출력 영역의 레이저가 이용되고 있다. 본고에서는, 첫째, 레이저를 이용한 첨단기술의 하나인 초미세가공 기술로서, 특히, 반도체의 레이저 프로세스로 화제를 모으고 있는 1) 에칭, 2) CVD(Chemical Vapor Deposition), 3) 적층성장(epitaxy), 4) 리소그라피, 5) 홀로그라피 등에 대하여, 다른 프로세스(이온 빔 프로세스, 플라즈마 프로세스, X선에 의한 프로세스등)와 비교하여 원리, 특징, 응용상태, 장래의 전망에 대하여논하고, 둘째, 엑시머 레이저의 응용 분야에서의 가장 실용화에 접근한것 중의 하나인 애블레이숀(ablation) 가공에 대하여 논한다.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.160.1-160
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• 2000

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.204-204
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• 2009

추가적인 습식 에칭 공정 없이 유도결합 화학 기상 증착법을 이용하여 공정변수 조절만으로 ZnO 박막의 texture와 표면 거칠기를 조절하여 Hzae 특성을 향상시켰다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.13-13
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• 2014

그래핀은 높은 열전도도, 이동도, 물리적 강도, 화학적 안정성을 갖는 물질로써 가장 활발하게 연구가 진행되고 있는 소재이다. 하지만, 높은 품질의 그래핀을 생산하기 위한 Chemical Vapor Deposition(CVD) 그래핀 제조 방법은 높은 공정단가와 낮은 수율 문제로 적용에 어려움을 겪고 있다. 본 연구에서는 초고순도 그래핀 플레이크를 RF thermal plasma를 이용하여 제조함으로써 이러한 문제점을 해결하고자 한다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.71-72
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• 2008

Ultralow-k 물질은 반도체 성능향상에 있어서 필요한 물질이다 [1]. 이를 위하여 본 실험은 톨루엔과 일반적인 SiO 박막을 제조하는 데 사용되어 지는 TEOS (tetraethyl orthosilicate)를 co-depo.하여 유무기 복합 박막을 PECVD (plasma enhanced chemical vapor deposition)법을 이용하여 증착하였다. 얻어진 박막은 IR과 nano-indentation과 capacitance의 측정을 통하여 측정되었다. 이를 통하여 co-depo.를 통한 유무기 복합 박막이 기존의 CVD법을 이용한 저유전 박막보다 우수한 기계적 특성을 가짐을 확인하였다.

• Membrane Journal
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• v.2 no.1
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• pp.21-32
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• 1992

Hydrogen-permselective silica membranes were synthesized within tim walls of porous Vycor tubes by chemical vapor depostion of $SiO_2$. Film deposition was carried out using $SiCl_4$ hydrolysis either in the oppm shag reactants or in the one-sided geometry. At temperatures above $600^{\circ}C$ the permeation rate of hydrogen thorough the silica films varied between 0.01 and $025cm^3(STP)/cm^2-min-atm$ depending on the reaction geometry and the $H_2 : N_2$ permeation ratio was about 1000. Permeation rates of both $H_2$ and $N_2$ increased with increasing temperature. The silica membranes produced by one-sided deposition have higher hydrogen permmeation rates than those produced by the opposing reactants geometry although the membranes formed in an opposing reactants geometry were relatively stable during the heat treatment or after exposure to ambient air. These membranes can be applied to high temperature gas separations or membrane reactors once the film deposition process is optimized to get high permeability as well as good stability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.05a
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• pp.137-141
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• 1993

We studied the fabrication and electrical characteristics of high voltage hydrogenerated amorphous silicon thin film transistor using glow discharge plasma enchanced chemical vapor deposition (GDPECVD) with $2500{\AA}\;SiO_2$, $400-1500{\AA}$ a-Si thickness, 350V output voltage, 100V input voltaege, and $9.55{\times}10^4$ average on/off ratio. We found that leakage current of high voltage TFT occured 0-70V drain voltage.

• The Korean Journal of Ceramics
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• v.3 no.1
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• pp.29-33
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• 1997

Four diamond films were deposited by the microwave plasma assisted chemical vapor deposition method varying CH4 concentration from 2.5 to 10% in the feeding gases. Thermal conductivity was measured on these free standing films by the steady state method from 80 K to 400K. They showed higher thermal conductivity as the film deposited with lower methane concentration. One exception, 7.79% methane concentration deposited film, was observed to be the highest thermal conductivity. Phonon scattering processes were considered to analyze the thermal conductivity with the full Callaway model. The grain size and the concentration of the extended and the point defects were used as the fitting parameters. Microstructure of diamond films was investigated with the scanning electron microscopy and Raman spectroscopy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.148-148
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• 2008

Low-k dielectric materials are an alternative plan to improve the signal propagation delay, crosstalk, dynamic power consumption due to resistance and parasitic capacitance generated the decrease of device size. Now, various materials is studied for the next generation. Diethoxymethlysiliane (DEMS) precursor using this study has two ethoxy groups along with one methyl group attached to the silicon atoms. SiCOH thin films were deposited on p-type Si(100) substrate by Plasma Enhanced Chemical Vapor Deposition (PECVD) using DEMS. In this study, we studied the effect of oxygen($O_2$) flow rate for DEMS to characteristics of thin films. The characteristics of thin films deposited using DEMS and $O_2$ evaluated through refractive index, dielectric constant(k), surface roughness, I-V(MIM:Al / SiCOH / Ag), C-V(MIM), deposition rate.