• 한국진공학회지
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• 제13권2호
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• pp.72-78
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• 2004

TaN막 위에 magnetron sputtering으로 증착 시킨 Cu seed 막을 Cu 전해도금을 하기에 앞서 ECR plasma 장치로 전처리 세정하였다. 이때 Cu 막을 200∼$500^{\circ}C$로 변화시키면서 알곤 또는 질소 분위기에서 RTA(rapid themal annealing) 방법으로 열처리하였다. Cu seed 막 위에 전해도금법으로 형성한 Cu 막을 열처리했을 때 미세구조와 물리적 특성변화를 XRD(x-ray diffraction), EBSD(electron back-scattered diffraction), AFM(atomic force microscopy) 분석을 이용하여 조사하였다. $400^{\circ}C$보다 높은 온도에서 재결정이 일어났으며, 열처리 온도를 증가함에 따라 Cu막의 비저항이 감소하고 (111) 우선배향성이 증가하는 경향을 나타냈다. 최소의 비저항과 부드러운 표면 및 (111) 배향성이 뛰어난 Cu막을 얻기 위한 최적의 열처리 조건은 $400^{\circ}C$의 질소분위기에서 120초간 RTA처리를 하는 것으로 판단된다. 이 조건하에서 전해도금된 Cu막의 비저항(resistivity)과 표면 거칠기(surface roughness)는 각각 1.98$\mu$O-cm 및 17.77nm였다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2007년도 춘계학술대회
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• pp.326-329
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• 2007

$CuInS_{2}$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furnace annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_{2}$ thin films with non-stoichiometry composition. $CuInS_{2}$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/ln/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and Hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}$ [$cm^{-3}$], 312.502 [$cm^{2}/V{\cdot}s$] and $2.36{\times}10^{-2}$ [${\Omega}{\cdot}cm$], respectively.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권1호
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• pp.11-16
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• 2001

CuNi alloy films are deposited by co-sputtering of dual targets (Cu and Ni, respectively). Effects of the co-sputtering conditions, such as powers applied to the targets, deposition pressures, and substrate temperatures, on the structural and electrical properties of deposited films are systematically investigated. The composition ratio of Ni/Cu is almost linearly decreased by increasing the DC power applied to the Cu target from 25.6 W to 69.7 W with the RF power applied to the Ni target unchanged(140 W). it is noted that the chamber pressure during deposition and the film thickness give rise to a change of the Ni/Cu ratio within the films deposited. The former may be due to a higher sputtering yield of Cu atom and the latter due to the re-sputtering phenomenon of Cu atoms on the surface of deposited film. The film deposited at higher pressures or at lower substrate temperatures have a smaller crystallite size, a higher electrical resistivity, and much more voids. This may be attributed to a lower surface mobility of sputtered atoms over the substrate.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2016년도 추계학술대회 논문집
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• pp.135-135
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• 2016

Recently flexible electrode materials have attracted attention in various electrical devices. In general, copper(Cu) is widely used electrical conductive material. However, Cu film showed drastically reduction of electrical conductivities under an applied tensile strain of 10%. These poor mechanical characteristics of Cu have difficulty applying in flexible electronic applications. In this study, mechanical flexibilities of Cu thin film were improved by hybridization with carbon nanotubes(CNTs) and laser sintering. First, thin carbon nanotube films were fabricated on a flexible polyethylene terephthalate(PET) substrate by using ultrasonic spray coating of CNT dispersed solution. After then, physically connected CNT-Cu NPs films were formed by utilizing ultrasonic spray coating of Cu nanoparticles dispersed solution on prepared CNT thin films. Finally, CNT-Cu thin films were firmly connected by laser sintering. Therefore, electrical stabilities under mechanical stress of CNT-Cu hybrid thin films were compared with Cu thin films fabricated under same conditions to confirm improvement of mechanical flexibilities by hybridization of CNT and Cu NPs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.239-242
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• 2000

To fabricate YBa$_2$Cu$_3$O$_{x}$ thick film using diffusion process, $Y_2$BaCuO$_{5}$ and BaO+CuO as the material of substrate and the doping material were selected. CeO$_2$ in the doping material was mixed. As another doping material, YBa$_2$Cu$_3$O$_{x}$ was prepared for the comparison with BaO+CuO doping material. Each doping material was patterned on $Y_2$BaCuO$_{5}$ substrate by the screen printing method and then was annealed above peritectic reaction temperature of YBCO with a few step. It could be observed by X-ray diffraction patterns and SEM photographs that through the diffusion process of the $Y_2$BaCuO$_{5}$ and BaO+CuO, the YBa$_2$Cu$_3$O$_{x}$ phase was formed. With an amout of addition of CeO$_2$, the thickness of a formed YBa$_2$Cu$_3$O$_{x}$ decreased. x/ decreased.

• 한국표면공학회지
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• 제29권5호
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• pp.379-385
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• 1996

Adhesion of Cu/Cr and Cu/$Cu_xCr_{1-x}$ thin films onto polyimide substrates has been studied. For an adhesion layer, Cr or Cu-Cr alloy films were deposited onto polyimide using DC magnetron sputtering machine. Then Cu was sputter-deposited and finally, Cu was electroplated. Adhesion was evaluated using $90^{\circ}C$ peel test or T-peel test. Plastic deformation of the peeled metal layer was qualitatively measured using XRD technique. It is confirmed that high interfacial fracture energy and large plastic deformation are important to enhance the peel adhesion strength. High peel strength is obtained when the interface is strongly bonded. More ductile film has higher peel strength. In Cu-Cr alloy films, opposite effects of the Cr addition in the alloy film on the peel strength are operative: a beneficial effect of strong interfacial bonding and a negative effect of smaller plastic deformation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 추계학술대회 논문집
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• pp.67-72
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• 1992

In this paper, We prepared the thin film Cu-doped CdS Photovoltaic Cell, varying deposition condition by E-beam process and investigated its properties. After the Cu/CdS films were deposited on transparent ITO glass. We heat-treated to diffuse Cu atoms to CdS fi1m at 350[$^{\circ}C$]. With deposited Cu-doped CdS film. We investigated the electrical. optical. X-ray diffraction and junction property. We studied how to prepare the High conversion efficiency Solar cell window layer.

• 한국표면공학회지
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• 제26권6호
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• pp.327-333
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• 1993

The effect of heat treatment on the adhesion between Cu-18wt% Cr film and polyimide has been studied by using T-peel test, AES, and XRD. Cu-18wt% Cr alloy and pure Cu films were sputter deposited onto pol-yimide. Cu was electroplated before and after heat treatment at $400^{\circ}C$ for 0.5 hr and 2 hrs respectively. The adhesion of metal film onto polyimide was considerably good before heat treatment, but heat treatment re-duced the peel adhesion strength in all specimens. The reduction in adhesion in adhesion strength values in the specimens which were plated after heat treatment was mainly due to Cr-O rich pahse formed in the metal/polyimide in-terface. In the specimens which were heat treated after plating, the enhanced ductility in the metal films con-tributes the peel adhesion strength by increasing the amount of deformation in metal strips.

• 마이크로전자및패키징학회지
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• 제10권3호
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• pp.89-98
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• 2003

반도체 소자의 배선용 재료로서 사용가능한 합금원소 Mg를 첨가한 Cu(Mg) 박막의 기계 및 전기적 특성 변화를 조사하였다. Cu(2.7at.%Mg) 박막은 열처리를 할 경우 Cu 박막에 비하여 표면거칠기는 약 1/10 정도로 줄고 $SiO_2$와의 접착력도 2배 이상 향상된 결과를 나타내었다. 또한 $300^{\circ}C$이상의 온도에서 10분 이상 열처리를 할 경우 급격한 저항감소를 보여주었는데 이는 Mg 원소의 확산으로 인해 표면 및 계면에서 Mg 산화물이 형성되고 내부에는 순수 Cu와 같이 되었기 때문이다. 경도 및 열응력에 대한 저항력도 Cu박막에 비해 우수한 것으로 나타났으며 열응력으로 인해 Cu 박막에 나타나던 표면 void가 Cu(Mg) 박막에서는 전혀 관찰되지 않았다. EM Test 결과 lifetime은 2.5MA/$cm^2$, $297^[\circ}C$에서 순수 Cu 라인보다 5배 이상 길고 BTS Test 결과 Capacitance-Voltage 그래프의 플랫 밴드 전압(V$_{F}$ )의 shift현상이 Cu에서는 나타났지만 Cu(Mg) 박막에서는 발생하지 않는 우수한 신뢰성을 보여주었다. 누설전류 측정을 통한 $SiO_2$의 파괴시간은 Cu에 비하여 약 3배 이상 길어 합금원소에 의한 확산방지 효과가 있음을 확인하였다.

• 한국진공학회지
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• 제8권2호
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• pp.121-126
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• 1999

Cu thin film was deposited by a self-ion assisted beam source (SIAB) and the assessment of the Cu films was given. Some characteristics of the source and the experimental procedure are described at various conditions such as total power, ionization efficiency, and ion current vs. deposition rate. The dependence of crystalline structure, impurity concentration, and resistivity of the Cu films deposited by SIAB on acceleration voltage are discussed.