• Title/Summary/Keyword: CTAT(complementary to absolute temperature)

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An Accurate Current Reference using Temperature and Process Compensation Current Mirror (온도 및 공정 보상 전류 미러를 이용한 정밀한 전류 레퍼런스)

  • Yang, Byung-Do
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.8
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    • pp.79-85
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    • 2009
  • In this paper, an accurate current reference using temperature and process compensation current mirror (TPC-CM) is proposed. The temperature independent reference current is generated by summing a proportional to absolute temperature (PTAT) current and a complementary to absolute temperature (CTAT) current. However, the temperature coefficient and magnitude of the reference current are influenced by the process variation. To calibrate the process variation, the proposed TPC-CM uses two binary weighted current mirrors which control the temperature coefficient and magnitude of the reference current. After the PTAT and CTAT current is measured, the switch codes of the TPC-CM is fixed in order that the magnitude of reference current is independent to temperature. And, the codes are stored in the non-volatile memory. In the simulation, the effect of the process variation is reduced to 0.52% from 19.7% after the calibration using a TPC-CM in chip-by-chip. A current reference chip is fabricated with a 3.3V 0.35um CMOS process. The measured calibrated reference current has 0.42% variation for $20^{\circ}$C${\sim}$100$^{\circ}$C.

A Study on the temperature sensing circuit using MOS applicable for the IC internal temperature measurement (IC 내부 온도측정이 가능한 MOS 온도센싱 회로에 관한 연구)

  • Kang, Byung-jun;Lee, Min-woo;Kim, Han-seul;Han, Jung-woo;Son, Sang-hee;Jung, on-sup
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2013.10a
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    • pp.695-697
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    • 2013
  • In this paper, temperature sensing circuit using by MOS is proposed. It produces the voltage as output and is applicable for the internal IC temperature measurement. It is designed by two current mirrors using MOS to implement the IC in the CMOS fabrication and is applicable for the various applications. It operates in two mode, temperature mode and sleep mode. From the simulation results, output voltage is measured from 0V to 1.2V by sweeping $0^{\circ}C{\sim}125^{\circ}C$ in temperature mode and output current flows under 100pA in sleep mode.

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Dual-mode CMOS Current Reference for Low-Voltage Low-Power (저전압 저전력 듀얼 모드 CMOS 전류원)

  • Lee, Geun-Ho
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.14 no.4
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    • pp.917-922
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    • 2010
  • In this paper, a new temperature-insensitive CMOS dual-mode current reference for low-voltage low-power mixed-mode circuits is proposed. The temperature independent reference current is generated by summing a proportional to absolute temperature(PTAT) current and a complementary to absolute temperature(CTAT) current. The temperature insensitivity was achieved by the mobility and the other which is inversely proportional to mobility. As the results, the temperature dependency of output currents was measured to be $0.38{\mu}A/^{\circ}C$ and $0.39{\mu}A/^{\circ}C$, respectively. And also, the power dissipation is 0.84mW on 2V voltage supply. These results are verified by the $0.18{\mu}m$ n-well CMOS parameter.