• 제목/요약/키워드: COF(Chip on Film)

검색결과 24건 처리시간 0.015초

극박형 복합재료 필름의 표면 물성 분석에 대한 연구 (Analysis of Surface Characteristics for Clad Thin Film Materials)

  • 이준하
    • 반도체디스플레이기술학회지
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    • 제17권1호
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    • pp.62-65
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    • 2018
  • In the era of the 4th Industrial Revolution, IoT products of various and specialized fields are being developed and produced. Especially, the generation of the artificial intelligence, robotic technology Multilayer substrates and packaging technologies in the notebook, mobile device, display and semiconductor component industries are demanding the need for flexible materials along with miniaturization and thinning. To do this, this work use FCCL (Flexible Copper Clad Laminate), which is a flexible printed circuit board (PCB), to implement FPCB (Flexible PCB), COF (Chip on Film) Use is known to be essential. In this paper, I propose a transfer device which prevents the occurrence of scratches by analyzing the mechanism of wrinkle and scratch mechanism during the transfer process of thin film material in which the thickness increases while continuously moving in air or solution.

철 샘플에 따른 구리 함유 폐에칭액의 시멘테이션 반응에 대한 연구 (A Study on the Cementation Reaction of Copper-containing Waste Etching Solution to the Shape of Iron Samples)

  • 김보람;장대환;김대원
    • 청정기술
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    • 제27권3호
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    • pp.240-246
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    • 2021
  • COF (Chip on film)용 폐에칭용액 내 구리가 약 3.5% 함유되어 있으며, 철 시편을 사용한 시멘테이션을 통해 구리를 회수하고자 하였다. 철 시편 3종류(플레이트, 칩, 분말)에 따른 시멘테이션 반응에 미치는 영향을 조사하였으며, 구리의 회수율을 높이고자 구리에 대한 철의 몰 비를 변수로 하였다. 반응 전·후 용액 내 시간에 따른 구리 농도의 변화를 확인하였으며, 몰 비를 증가시킬수록 초기 용액 내 구리 함량이 급격히 줄어드는 경향이 나타났다. 상온에서 1시간의 시멘테이션 반응 후 철 시편의 비표면적 값이 큰 플레이트, 칩, 분말 순으로 구리의 회수율이 증가하였다. 회수된 분말은 X선 회절 분석기(X-ray diffraction, XRD), 주사전자현미경(scanning electron microscopy, SEM) 및 에너지 분산형 분광분석법(Energy-dispersive X-ray spectroscopy, EDM) 분석을 통해 결정상과 결정 형태를 확인하였으며, 철 분말의 경우에는 회수된 구리 분말에 미반응된 철 성분이 혼재하였다. 구리에 대한 철의 몰 비 4의 조건으로 철 칩을 사용하였을 때, 구리 회수율 약 98.4%로 최적 조건으로 달성하였다.

플립칩용 에폭시 접착제의 저온 속경화 거동에 미치는 경화제의 영향 (Effects of Hardeners on the Low-Temperature Snap Cure Behaviors of Epoxy Adhesives for Flip Chip Bonding)

  • 최원정;유세훈;이효수;김목순;김준기
    • 한국재료학회지
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    • 제22권9호
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    • pp.454-458
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    • 2012
  • Various adhesive materials are used in flip chip packaging for electrical interconnection and structural reinforcement. In cases of COF(chip on film) packages, low temperature bonding adhesive is currently needed for the utilization of low thermal resistance substrate films, such as PEN(polyethylene naphthalate) and PET(polyethylene terephthalate). In this study, the effects of anhydride and dihydrazide hardeners on the low-temperature snap cure behavior of epoxy based non-conductive pastes(NCPs) were investigated to reduce flip chip bonding temperature. Dynamic DSC(differential scanning calorimetry) and isothermal DEA(dielectric analysis) results showed that the curing rate of MHHPA(hexahydro-4-methylphthalic anhydride) at $160^{\circ}C$ was faster than that of ADH(adipic dihydrazide) when considering the onset and peak curing temperatures. In a die shear test performed after flip chip bonding, however, ADH-containing formulations indicated faster trends in reaching saturated bond strength values due to the post curing effect. More enhanced HAST(highly accelerated stress test) reliability could be achieved in an assembly having a higher initial bond strength and, thus, MHHPA is considered to be a more effective hardener than ADH for low temperature snap cure NCPs.

저 에너지 표면 개질 이온원이 설치된 진공 웹 공정을 이용한 2층 flexible copper clad laminate 제작 (Fabrication of 2-layer Flexible Copper Clad Laminate by Vacuum Web Coater with a Low Energy Ion Source for Surface Modification)

  • 최형욱;박동희;최원국
    • 한국재료학회지
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    • 제17권10호
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    • pp.509-515
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    • 2007
  • In order to fabricate adhesiveless 2-layer flexible copper clad laminate (FCCL) used for COF (chip on film) with high peel strength, polyimide (PI; Kapton-EN, $38\;{\mu}m$) surface was modified by reactive $O_2^+$ and $N_2O^+$ ion beam irradiation. 300 mm-long linear electron-Hall drift ion source was used for ion irradiation with ion current density (J) higher than $0.5\;mA/cm^2$ and energy lower than 200 eV. By vacuum web coating process, PI surface was modified by linear ion source and then 10-20 nm thick Ni-Cr and 200 nm thick Cu film were in-situ sputtered as a tie layer and seed layer, respectively. Above this sputtered layer, another $8-9{\mu}m$ thick Cu layer was grown by electroplating and subsequently acid and base resistance and thermal stability were tested for examining the change of peel strength. Peel strength for the FCCLs treated by both $O_2^+$ and $N_2O^+$ ion irradiation showed similar magnitudes and increased as the thickness of tie layer increased. FCCL with Cu (200 nm)/Ni-Cr (20 nm)/PI structure irradiated with $N_2O^+$ at $1{\times}10^{16}/cm^2$ ion fluence was proved to have a strong peel strength of 0.73 kgf/cm for as-received and 0.34 kgf/cm after thermal test.