• Tribology and Lubricants
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• v.27 no.1
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• pp.7-12
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• 2011

Interest in advanced machining process such as AJM(abrasive jet machining) and CMP(chemical-mechanical polishing) using micro/nano-sized abrasives has been on the increasing demand due to wide use of super alloys, composites, semiconductor and ceramics, which are difficult to or cannot be processed by traditional machining methods. In this paper, the effects of pressure, wafer moving velocity and fluid viscosity were investigated by 2-dimensional finite element analysis method considering slurry fluid flow. From the investigation, it could be found that the simulation results quite corresponded well to the Preston's equation that describes pressure/velocity dependency on material removal. The result also revealed that the stress and corresponding material removal induced by the collision of particle may decrease under relatively high wafer moving speed due to the slurry flow resistance. In addition, the increase in slurry fluid viscosity causes the reduction of material removal rate. It should be noted that the viscosity effect can vary with the shape of abrasive particle.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.10a
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• pp.56-56
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• 2003

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.10a
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• pp.88-88
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• 2003

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.05a
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• pp.70-70
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• 2001

• Proceedings of the Materials Research Society of Korea Conference
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• 2000.11a
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• pp.52-52
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• 2000

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.11a
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• pp.67-67
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• 2002

• Tribology and Lubricants
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• v.28 no.1
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• pp.7-11
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• 2012

In this paper, the results of finite element(FE) analysis of chemical mechanical polishing(CMP) process using 2-dimensional elements were discussed. The objective of this study is to find the generation mechanism of microscratches on a wafer surface during the process. Especially, a FE model with a particle inside pad pore was considered to observe how such a contact situation could contribute to microscratch generation. The results of the finite element simulations revealed that during CMP process the pad-particle mixture could be formed and this would be a major factor leading to microscratch generation.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.64-64
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• 2003

고집적화된 시스템 LSI 반도체 소자 제조 공정에서 소자의 고속화 및 고성능화에 따른 배선층수의 증가와 배선 패턴 미세화에 대한 요구가 갈수록 높아져, 광역평탄화가 가능한 STI CMP(Shallow Trench Isolation Chemical-Mechanical-Polishing)공정의 중요성이 더해가고 있다. 이러한 STI CMP 공정에서 세리아 슬러리에 첨가되는 계면활성제의 농도에 따라 산화막과 질화막 사이의 연마 선택비를 제어하는 것이 필수적 과제로 등장하고 있다. 일반적인 CMP 공정에서 압력 증가에 따른 연마 제거량이 Prestonian 거동을 나타내는 반면, 연마 입자의 크기를 변화시켜 계면활성제의 농도를 달리 하였을 경우, 압력 변화에 따라 Non-Prestonian 거동이 나타나는 것을 고찰할 수 있었다. 따라서 본 연구에서는 세리아 슬러리 내에 첨가되는 계면활성 제의 농도와 연마입자의 크기를 달리한 후, 압력을 변화시킴으로 나타나는 non-Prestonian 거동에 미치는 영향에 대하여 연구하였다.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.05a
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• pp.854-857
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• 2000

Chemical Mechanical Polishing(CMP) has been accepted as one of the essential processes for VLSI fabrication. However, as the polishing process continues, pad pores get to be glazed by polishing residues, which hinder the supply of new slurry. This defect makes removal rate decrease with a number of polished wafer and the desired within-chip planarity, within wafer and wafer-to-wafer nonuniformity are unable to be achieved. So, pad conditioning is essential to overcome this defect. The eletroplated diamond grit disk is used as the conventional conditioner, And alumina long fiber, the .jet power of high pressure deionized water and vacuum compression are under investigation. But, these methods have the defects like scratches on wafer surface by out of diamond grits, subsidences of pad pores by over-conditioning, and the limits of conditioning effect. To improve these conditioning methods. this paper presents the Characteristics of Ultrasonic conditioning aided by cavitation.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.479-480
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• 2006

The purpose of this paper is to investigate the relationship between CMP(Chemical Mechanical Polishing) characteristics of ITO thin film and friction signal by using the CMP monitoring system. Suba 400 pad and MSW2000 slurry of the Rohm & Haas Co. was used in this experiment to investigate the charateristics of ITO CMP. From this experiment, it is proven that the coefficient of friction is related to uniformity of the removal rate of the ITO thin film. Therefore, the prediction of polishing result would be possible by measuring friction signal.