• Title/Summary/Keyword: CMOS Analog to Digital Converter

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The Design of 10-bit 200MS/s CMOS Parallel Pipeline A/D Converter (10-비트 200MS/s CMOS 병렬 파이프라인 아날로그/디지털 변환기의 설계)

  • Chung, Kang-Min
    • The KIPS Transactions:PartA
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    • v.11A no.2
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    • pp.195-202
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    • 2004
  • This paper introduces the design or parallel Pipeline high-speed analog-to-digital converter(ADC) for the high-resolution video applications which require very precise sampling. The overall architecture of the ADC consists of 4-channel parallel time-interleaved 10-bit pipeline ADC structure a]lowing 200MSample/s sampling speed which corresponds to 4-times improvement in sampling speed per channel. Key building blocks are composed of the front-end sample-and-hold amplifier(SHA), the dynamic comparator and the 2-stage full differential operational amplifier. The 1-bit DAC, comparator and gain-2 amplifier are used internally in each stage and they were integrated into single switched capacitor architecture allowing high speed operation as well as low power consumption. In this work, the gain of operational amplifier was enhanced significantly using negative resistance element. In the ADC, a delay line Is designed for each stage using D-flip flops to align the bit signals and minimize the timing error in the conversion. The converter has the power dissipation of 280㎽ at 3.3V power supply. Measured performance includes DNL and INL of +0.7/-0.6LSB, +0.9/-0.3LSB.

The Low Area 12-bit SAR ADC (저면적 12비트 연속 근사형 레지스터 아날로그-디지털 변환기)

  • Sung, Myeong-U;Choi, Geun-Ho;Kim, Shin-Gon;Rastegar, Habib;Tall, Abu Abdoulaye;Kurbanov, Murod;Choi, Seung-Woo;Pushpalatha, Chandrasekar;Ryu, Jee-Youl;Noh, Seok-Ho;Kil, Keun-Pil
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2015.10a
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    • pp.861-862
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    • 2015
  • In this paper we present a low area 12-bit SAR ADC (Successive Approximation Register Analog-to-Digital Converter). The proposed circuit is fabricated using Magnachip/SK Hynix 1-Poly 6-Metal $0.18-{\mu}m$ CMOS process, and it is powered by a 1.8-V supply. Total chip area is reduced by replacing the MIM capacitors with MOS capacitors instead of the capacitors consisting of overall part in chip area. The proposed circuit showed improved power dissipation of 1.9mW, and chip area of $0.45mm^2$ as compared to conventional research results at the power supply of 1.8V. The designed circuit also showed high SNDR (Signal-to-Noise Distortion Ratio) of 70.51dB, and excellent effective number of bits of 11.4bits.

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A Single-Bit 2nd-Order CIFF Delta-Sigma Modulator for Precision Measurement of Battery Current (배터리 전류의 정밀 측정을 위한 단일 비트 2차 CIFF 구조 델타 시그마 모듈레이터)

  • Bae, Gi-Gyeong;Cheon, Ji-Min
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.13 no.3
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    • pp.184-196
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    • 2020
  • In this paper, a single-bit 2nd-order delta-sigma modulator with the architecture of cascaded-of-integrator feedforward (CIFF) is proposed for precision measurement of current flowing through a secondary cell battery in a battery management system (BMS). The proposed modulator implements two switched capacitor integrators and a single-bit comparator with peripheral circuits such as a non-overlapping clock generator and a bias circuit. The proposed structure is designed to be applied to low-side current sensing method with low common mode input voltage. Using the low-side current measurement method has the advantage of reducing the burden on the circuit design. In addition, the ±30mV input voltage is resolved by the ADC with 15-bit resolution, eliminating the need for an additional programmable gain amplifier (PGA). The proposed a single-bit 2nd-order delta-sigma modulator has been implemented in a 350-nm CMOS process. It achieves 95.46-dB signal-to-noise-and-distortion ratio (SNDR), 96.01-dB spurious-free dynamic range (SFDR), and 15.56-bit effective-number-of-bits (ENOB) with an oversampling ratio (OSR) of 400 for 5-kHz bandwidth. The area and power consumption of the delta-sigma modulator are 670×490 ㎛2 and 414 ㎼, respectively.