• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.2
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• pp.21-27
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• 2008

This paper describes a CMOS 16:1 binary-tree multiplexer(MUX) using $0.18-{\mu}m$ technology. To provide immunity for wide frequency range and process-and-temperature variations, the MUX adopts several delay compensation techniques. Simulation results show that the proposed MUX maintains the setup margins and hold margins close to the optimal value, i.e., 0.5UI, in wide frequency-range and in wide process-and-temperature variations, with standard deviation of 0.05UI approximately. These results represent that these proposed delay compensations are effective and the reliability is much improved although CMOS logic circuits are sensitive to those variations. The MUX is fabricated using $0.18-{\mu}m$ CMOS process, and tested with a test board. At power supply voltage of 1.8-V, maximum data-rate and area of the MUX is 1.65-Gb/s and 0.858 $mm^2$, respectively. The MUX dissipates a power of 24.12 mW, and output eye opening is 272.53 mV, 266.55 ps at 1.65-Gb/s operation.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.4 s.119
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• pp.408-415
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• 2007

A switched-gain controlled LNA is designed and implemented in 0.18 um CMOS technology for $3.1{\sim}4.8\;GHz$ UWB system. In high gain mode, measurement shows a power gain of 12.5 dB, an input IP3 of 0 dBm, while consuming only 8.13 mA of current. In low gain mode, measurement shows a power gain of -8.7 dB, an input IP3 of 9.1 dBm, while consuming only 0 mA of current.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.5
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• pp.393-396
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• 2018

Herein, a 94-GHz low-noise amplifier (LNA) using the 65-nm CMOS process is presented. The LNA is composed of a four-stage differential common-source amplifier and impedance matching is accomplished with transformers. The fabricated LNA chip shows a peak gain of 25 dB at 94 GHz and has a 3-dB bandwidth at 5.5 GHz. The chip consumes 46 mW of DC power from a 1.2-V supply, and the total chip area, including the pads, is $0.3mm^2$.

• Proceedings of the KIEE Conference
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• 2008.10b
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• pp.509-510
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• 2008

본 논문은 $0.18{\mu}m$ CMOS 공정을 사용하여 2.5Gb/s CMOS CDR을 설계하였다. CML type의 논리게이트를 이용하여 보다 높은 주파수의 대역의 데이터를 복원하기 위한 위상비교기(PD)와 PD의 up과 down신호를 지연없이 루프필터(LF)에 공급하기 위한 전하점프(CP) 그리고 외부 스위치를 통해 VCO이득을 조절할 수 있는 링 타입의 VCO로 구성되었다. 또한 VCO의 부담을 줄이기 위하여 half-rate 클럭 테크닉을 사용하였다. Cadence tool을 사용하여 모의실험 및 layout을 하였다. VCO이득은 100MHz/V이고, 클릭 jitter는 rising일 때 27ps, falling일 때 32ps로 우수한 결과를 얻을 수 있었다. 테스트칩 제작은 매그나침 $0.18{\um}$ CMOS 공정을 이용하였다. 칩 사이즈는 PAD를 포함하여 $850um{\times}750um$이다.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.567-568
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• 2008

In this paper, we proposed the design on LNA for $3{\sim}5\;GHz$ frequency with Using $0.18{\mu}m$CMOS technology. The LNA gain is 12-15 dB, and noise figure is lower than 5 dB and Input/output matching is lower than 10 dB in frequency range from 3 GHz to 5 GHz. The topology, which common source output of cascode is reduced noise figure and improved gain. Input common gate amplifier extend LNA's bandwidth.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.8
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• pp.784-789
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• 2011

In this paper, a tunable integrated transmitter leakage canceller based on an autotransformer for ultra-high-frequency (UHF) RFID readers is presented. The proposed TX leakage canceller consists of an autotransformer, a digital tuning capacitor, a voltage controlled tuning resistor, and a compensating amplifier, and it is designed using 0.13 ${\mu}m$ 1-poly 6-metal RF CMOS process. The simulation results show that the proposed structure has over 55 dB rejection characteristic between a transmitter and a receiver and a 2.5 dB of the RX insertion loss. The TX leakage canceller can be digitally tuned from 825 MHz to 985 MHz with the tuning capacitor and it can be fully integrated.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.10
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• pp.832-835
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• 2017

In this paper, V-band differential low noise amplifier(LNA) using 65-nm CMOS process for high speed wireless data communication is presented. The LNA is composed of 3-stage common-source differential amplifiers with neutralization of feedback capacitances using MOS capacitors and impedance matching utilizing transformers. The fabricated LNA has a peak gain of 23 dB at 63 GHz and 3 dB bandwidth of 6 GHz. The chip area of LNA is $0.3mm^2$ and the LNA consumes 32 mW DC power from 1.2 V supply voltage.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.3
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• pp.565-570
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• 2012

This paper has proposed a multi-channel low pass filter (LPF) for LTE-Advanced systems. The proposed LPF is an active-RC 5th chebyshev topology with three cut-off frequencies of 5 MHz, 10 MHz, and 40 MHz. A 3-bit tuning circuit has been adopted to prevent variations of each cut-off frequency from process, voltage, and temperature (PVT). To achieve a high cut-off frequency of 40 MHz, an operational amplifier used in the proposed filter has employed a PMOS cross-connection load with a negative impedance. A proposed filter has been implemented in a 0.13-${\mu}m$ CMOS technology and consumes 20.2 mW with a 1.2 V supply voltage.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.41 no.5
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• pp.43-48
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• 2004

A PWM Circuit using CMOS OTA is proposed. It features that the oscillation frequency is independent of supply voltage and temperature, and is linearly controlled by the bias current of OTA. The H-SPICE simulation results are given and they show good performance of the proposed circuit. The layout results using 0.3${\mu}{\textrm}{m}$ CMOS technology for IC implementation are also given.

• Journal of IKEEE
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• v.8 no.2 s.15
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• pp.161-165
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• 2004

In this paper, an 8bit wave pipelined adder using the static CMOS plus Edge-Sensing Completion Detection Logic is presented. The clockless wave-pipelining algorithm was implemented in the circuit design. The Edge-Sensing Completion Detection (ESCD) in the algorithm is consisted of edge-sensing circuits and latches. Using the algorithm, skewed data at the output of 8bit adder could be aligned. Simulation results show that the adder operates at 1GHz in $0.35{\mu}m$ CMOS technology with 3.3V supply voltage.