• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.6 s.360
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• pp.19-27
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• 2007

This paper presents power supply-insensitive Gbps low power LVDS I/O circuits. The proposed LVDS I/O has been designed and simulated using 1.8V, $0.18\;{\mu}m$ TSMC CMOS Process. The LVDS I/O includes transmitter and receiver parts. The transmitter circuits consist of a differential phase splitter and an output stage with the switched capacitor common mode feedback(SC-CMFB). The differential phase splitter generates a pair of differential signals which provides a balanced duty $cycle(50{\pm}2%)$ and phase difference$(180{\pm}0.2^{\circ})$ over a wide supply voltage range. Also, $V_{OD}$ voltage is 250 mV which is the smallest value of the permissible $V_{OD}$ range for low power operation. The output buffer maintains the required $V_{CM}$ within the permissible range$(1.2{\pm}0.1V)$ due to the SC-CMFB. The receiver covers a wide input DC offset $range(0.2{\sim}2.6\;V)$ with 38 mV hysteresis and Produces a rail-to-rail output over a wide supply voltage range. Beside, the designed receiver has 38.9 dB gain at 1 GHz, which is higher than conventional receivers.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.8
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• pp.95-101
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• 2009

Random numbers are used in many sorts of applications. Some applications, like simple software simulation tests, communication protocol verifications, cryptography verification and so forth, need various levels of randomness with various process speeds. In this paper, we propose a fast pseudorandom generator module for embedded systems. The generator module is implemented in hardware which can run in two modes, one of which can generate random numbers with higher randomness but which requires six cycles, the other providing its result within one cycle but with less randomness. An ASIP (Application Specific Instruction set Processor) was designed to implement the proposed pseudorandom generator instruction sets. We designed a processor based on the MIPS architecture,, by using LISA, and have run statistical tests passing the sequence of the Diehard test suite. The HDL models of the processor were generated using CoWare's Processor Designer and synthesized into the Dong-bu 0.18um CMOS cell library using the Synopsys Design Compiler. With the proposed pseudorandom generator module, random number generation performance was 239% faster than software model, but the area increased only 2.0% of the proposed ASIP.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.11
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• pp.56-65
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• 2016

In this paper, in order to reduce the delay and area of the partial product accumulation (PPA) of the parallel decimal multiplier, a tree architecture that composed by multi-operand decimal CSAs and improved CLA is proposed. The proposed tree using multi-operand CSAs reduces the partial product quickly. Since the input range of the recoder of CSA is limited, CSA can get the simplest logic. In addition, using the multi-operand decimal CSAs to add decimal numbers that have limited range in specific locations of the specific architecture can reduce the partial products efficiently. Also, final BCD result can be received faster by improving the logic of the decimal CLA. In order to evaluate the performance of the proposed partial product accumulation, synthesis is implemented by using Design Complier with 180 nm COMS technology library. Synthesis results show the delay of the proposed partial product accumulation is reduced by 15.6% and area is reduced by 16.2% comparing with which uses general method. Also, the total delay and area are still reduced despite the delay and area of the CLA are increased.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.2
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• pp.93-100
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• 2009

This paper presents a step up four channel DC-DC converter using charge pump voltage doubler structure. Our goal is to design and implement DC-DC converter for capacitive SP4T RF MEMS switch in front end module in wireless transceiver system. Charge pump structure is small and consume low power 3.3V input voltage is boosted by DC-DC Converter to $11.3{\pm}0.1V$, $12.4{\pm}0.1V$, $14.1{\pm}0.2V$ output voltage With 10MHz switching frequency. By using voltage level shifter structure, output of DC-DC converter is selected by 3.3V four channel selection signals and transferred to capacitive MEMS devices. External passive devices are not used for driving DC-DC converter. The total chip area is $2.8{\times}2.1mm^2$ including pads and the power consumption is 7.52mW, 7.82mW, 8.61mW.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.4
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• pp.39-50
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• 2011

In this paper, we presents a CDR circuit for $2^{nd}$-generation AiPi+, one of the Intra-panel Interface. The speed of the proposed clock and data recovery is increased to 1.25 Gbps compared with that of AiPi+. The DLL-based CDR architecture is used to generate the multi-phase clocks. We propose the simple scheme for frequency detector (FD) to mitigate the harmonic-locking and reduce the complexity. In addition, the duty cycle corrector that limits the maximum pulse width is used to avoid the problem of missing clock edges due to the mismatch between rising and falling time of VCDL's delay cells. The proposed CDR is implemented in 0.18 um technology with the supply voltage of 1.8 V. The active die area is $660\;{\mu}m\;{\times}\;250\;{\mu}m$, and supply voltage is 1.8 V. Peak-to-Peak jitter is less than 15 ps and the power consumption of the CDR except input buffer, equalizer, and de-serializer is 5.94 mW.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.12
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• pp.184-193
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• 2012

In this paper, a 5-bit 2-GS/s 2-way time interleaved pipeline ADC for high-speed serial link receiver is demonstrated. Implemented as a current-mode amplifier, the stage ADC simultaneously processes the tracking and residue amplification to achieve higher sampling rate. In addition, each stage incorporates a built-in 1-tap FIR equalizer, reducing inter-symbol-interference (ISI）without an extra digital post-processing. The ADC is designed in a 110nm CMOS technology. It comsumes 91mW from a 1.2-V supply. The area excluding the memory block is $0.58{\times}0.42mm^2$. Simulation results show that when equalizer is enabled, the ADC achieves SNDR of 25.2dB and ENOB of 3.9bits at 2.0GS/s sample rate for a Nyquist input signal. When the equalizer is disengaged, SNDR is 26.0dB for 20MHz-1.0GHz input signal, and the ENOB of 4.0bits.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.12
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• pp.20-35
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• 2016

In this paper, in order to reduce the delay and area of the partial product accumulation (PPA) of the parallel decimal multiplier, a tree architecture that composed by multi-operand decimal CSAs and improved CLA is proposed. The proposed tree using multi-operand CSAs reduces the partial product quickly. Since the input range of the recoder of CSA is limited, CSA can get the simplest logic. In addition, using the multi-operand decimal CSAs to add decimal numbers that have limited range in specific locations of the specific architecture can reduce the partial products efficiently. Also, final BCD result can be received faster by improving the logic of the decimal CLA. In order to evaluate the performance of the proposed partial product accumulation, synthesis is implemented by using Design Complier with 180 nm COMS technology library. Synthesis results show the delay of the proposed partial product accumulation is reduced by 15.6% and area is reduced by 16.2% comparing with which uses general method. Also, the total delay and area are still reduced despite the delay and area of the CLA are increased.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.4
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• pp.27-36
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• 2006

We fabricated thermally evaporated 10 nm-Ni/(poly)Si, 10 nm-Ni/l nm-Ir/(poly)Si and 10 nm-Ni/l nm-Pt/(poly)Si films to investigate the thermal stability of nickel monosilicides at the elevated temperatures by rapid annealing them at the temperatures of $300{\sim}1200^{\circ}C$ for 40 seconds. Silicides of 50 nm-thick were formed on top of both the single crystal silicon actives and the polycrystalline silicon gates. A four-point tester was used to examine sheet resistance. A scanning electron microscope and field ion beam were employed for thickness and microstructure evolution characterization. An X-ray diffractometer and an Auger depth profiler were used for phase and composition analysis, respectively. Nickel silicides with platinum have no effect on widening the NiSi stabilization temperature region. Nickel silicides with iridium farmed on single crystal silicon showed a low resistance up to $1200^{\circ}C$ while the ones formed on polycrystalline silicon substrate showed low resistance up to $850^{\circ}C$. The grain boundary diffusion and agglomeration of silicides lowered the NiSi stable temperature with polycrystalline silicon substrates. Our result implies that our newly proposed Ir added NiSi process may widen the thermal process window for nano CMOS process.

• Korean Journal of Materials Research
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• v.10 no.12
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• pp.812-818
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• 2000

We studied the effects of Ge preamorphization (PAM) on 0.25$\mu\textrm{m}$ Ti-salicide junctions using comparative study with As PAM. For each PAM schemes, ion implantations are performed at a dose of 2E14 ion/$\textrm{cm}^2$ and at 20keV energy using $^{75}$ /As+and GeF4 ion sources. Ge PAM showed better sheet resistance and within- wafer uniformity than those of As PAM at 0.257m line width of n +/p-well junctions. This attributes to enhanced C54-silicidation reaction and strong (040) preferred orientation of the C54-silicide due to minimized As presence at n+ junctions. At p+ junctions, comparable performance was obtained in Rs reduction at fine lines from both As and Ge PAM schemes. Junction leakage current (JLC) revels are below ~1E-14 A/$\mu\textrm{m}^{2}$ at area patterns for all process conditions, whereas no degradation in JLC is shown under Ge PAM condition even at edge- intensive patterns. Smooth $TiSi_2$ interface is observed by cross- section TEM (X- TEM), which supports minimized silicide agglomeration due to Ge PAM and low level of JLC. Both junction break- down voltage (JBV) and contact resistances are satisfactory at all process conditions.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.40 no.2
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• pp.397-407
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• 2015

In this paper, we designed 1 chip IC for 3-axis gyroscope and 3-axis accelerometer used for various IoT/M2M mobile devices such as smartphone, wearable device and etc. We especially focused on analysis of gyroscope noise and proposed new architecture for removing various noise generated by gyroscope MEMS and IC. Gyroscope, accelerometer and geo-magnetic sensors are usually used to detect user motion or to estimate moving distance, direction and relative position. It is very important element to designing a low noise IC because very small amount of noise may be accumulated and affect the estimated position or direction. We made a mathematical model of a gyroscope sensor, analyzed the frequency characteristics of MEMS and circuit, designed a low noise, compact and low power 1 chip 6-axis inertial sensor IC including 3-axis gyroscope and 3-axis accelerometer. As a result, designed IC has 0.01dps/${\sqrt{Hz}}$ of gyroscope sensor noise density.