• Title/Summary/Keyword: CMOS회로

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Low-power FFT/IFFT Processor for Wireless LAN Modem (무선 랜 모뎀용 저전력 FFT/IFFT프로세서 설계)

  • Shin Kyung-Wook
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.29 no.11A
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    • pp.1263-1270
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    • 2004
  • A low-power 64-point FFT/IFFT processor core is designed, which is an essential block in OFDM-based wireless LAM modems. The radix-2/418 DIF (Decimation-ln-Frequency) FFT algorithm is implemented using R2SDF (Radix-2 Single-path Delay Feedback) structure. Some design techniques for low-power implementation are considered from algorithm level to circuit level. Based on the analysis on infernal data flow, some unnecessary switching activities have been eliminated to minimize power dissipation. In circuit level, constant multipliers and complex-number multiplier in data-path are designed using truncation structure to reduce gate counts and power dissipation. The 64-point FFT/IFFT core designed in Verilog-HDL has about 28,100 gates, and timing simulation results using gate-level netlist with extracted SDF data show that it can safely operate up to 50-MHz@2.5-V, resulting that a 64-point FFT/IFFT can be computed every 1.3-${\mu}\textrm{s}$. The functionality of the core was fully verified by FPGA implementation using various test vectors. The average SQNR of over 50-dB is achieved, and the average power consumption is about 69.3-mW with 50-MHz@2.5-V.

Input Balun Design Method for CMOS Differential LNA (차동 저 잡음 증폭기의 입력 발룬 설계 최적화 기법)

  • Yoon, Jae-Hyuk
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.28 no.5
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    • pp.366-372
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    • 2017
  • In this paper, the analysis of baluns that are inevitably required to design a differential low noise amplifier, The balun converts a single signal input from the antenna into a differential signal, which serves as an input to the differential amplifier. In addition, it protects the circuit from ESD(Electrostatic Discharge) coming through the antenna and helps with input matching. However, in the case of a passive balun used in general, since the AC signal is transmitted through electromagnetic coupling formed between two metal lines, it not only has loss without gain but also has the greatest influence on the total noise figure of the receiving end. Therefore, the design of a balun in a low-noise amplifier is very important, and it is important to design a balun in consideration of line width, line spacing, winding, radius, and layout symmetry that are necessary. In this paper, the factors to be considered for improving the quality factor of balun are summarized, and the tendency of variation of resistance, inductance, and capacitance of the balun according to design element change is analyzed. Based on the analysis results, it is proved that the design of input balun allows the design of low noise, high gain differential amplifier with gain of 24 dB and noise figure of 2.51 dB.

Design of Hybrid Supply Modulator for Reconfigurable Power Amplifiers (재구성 전력증폭기용 혼합형 가변 전압 공급기의 설계)

  • Son, Hyuk-Su;Kim, Woo-Young;Jang, Joo-Young;Lee, Hae-Jin;Oh, Inn-Yeal;Park, Chul-Soon
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.23 no.4
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    • pp.475-483
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    • 2012
  • This paper presents new type of the hybrid supply modulator for the next reconfigurable transmitters. The efficiency of the hybrid supply modulator is one of the most important performance. For enhancement the efficiency, multi-switching structure in the hybrid supply modulator is employed. Additionally, input envelope signal sensing stage is employed for implementation multi-mode operation. To compare the performance of the proposed hybrid supply modulator, the conventional hybrid supply modulator is also designed. The measured efficiency of the proposed hybrid supply modulator is 85 %/84 %/79 % for EDGE/WCDMA/LTE signals which have 384 kHz/3.84 MHz/5 MHz bandwidth, respectively. The efficiency of the proposed hybrid supply modulator is higher than the conventional hybrid supply modulator. Therefore, this structure shows good candidate for the reconfigurable transmitters.

Analysis of Input/Output Transfer Characteristic to Transmit Modulated Signals through a Dynamic Frequency Divider (동적 주파수 분할기의 변조신호 전송 조건을 위한 입출력 전달 특성 분석과 설계에 대한 연구)

  • Ryu, Sungheon;Park, Youngcheol
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.27 no.2
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    • pp.170-175
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    • 2016
  • In order to transmit baseband signals through frequency dividing devices, we studied the transfer function of the device in the term of the baseband signal distortion. From the analysis, it is shown that the magnitude of the envelope signal is related to the mixer gain and the insertion loss of the low pass filter whilst the phase is the additional function with the 1/2 of the phase delay. For the purpose of the verification of the study, we designed a dynamic frequency divider at 1,400 MHz. The operating frequency range of the device is closely related to the conversion gain of mixers and the amplitude of input signal, and becomes wide as the conversion gain of mixers increases. The designed frequency divider operates between 0.9 GHz and 3.2 GHz, for -14.5 dBm input power. The circuit shows 20 mW power dissipation at $V_{DD}=2.5V$, and the simulation result shows that an amplitude modulated signal at 1,400 MHz with the modulation index of 0.9 was successfully downconverted to 700 MHz.

A Design of Ultra-low Noise LDO Regulator for Low Voltage MEMS Microphones (저전압 MEMS 마이크로폰용 초저잡음 LDO 레귤레이터 설계)

  • Moon, Jong-il;Nam, Chul;Yoo, Sang-sun
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2021.10a
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    • pp.630-633
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    • 2021
  • Microphones can convert received voice signals to electric signals. They have been widely used in various industries such as radios, smart devices and vehicles. Recently, the demands for small size and high sensitive microphones are increased according to the minimization of wireless earphone with the development of smart phone. A MEMS system is a good candidate for an ultra-small size microphone of a next generation and a read out IC for high sensitive MEMS sensor is researched from many industries and academies. Since the microphone system has a high sensitivity from environment noise and electric system noise, the system requires a low noise power supply and some low noise design techniques. In this paper, a low noise LDO is presented for small size MEMS microphone systems. The input supply voltage of the LDO is 1.5-3.6V, and the output voltage is 1.3V. Then, it can support to 5mA in the light load condition. The integrated output noise of proposed LDO form 20Hz to 20kHz is about 1.9uV. These post layout simulation results are performed with TSMC 0.18um CMOS technology and the size of layout is 325㎛ × 165㎛.

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A Non-Calibrated 2x Interleaved 10b 120MS/s Pipeline SAR ADC with Minimized Channel Offset Mismatch (보정기법 없이 채널 간 오프셋 부정합을 최소화한 2x Interleaved 10비트 120MS/s 파이프라인 SAR ADC)

  • Cho, Young-Sae;Shim, Hyun-Sun;Lee, Seung-Hoon
    • Journal of the Institute of Electronics and Information Engineers
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    • v.52 no.9
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    • pp.63-73
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    • 2015
  • This work proposes a 2-channel time-interleaved (T-I) 10b 120MS/s pipeline SAR ADC minimizing offset mismatch between channels without any calibration scheme. The proposed ADC employs a 2-channel SAR and T-I topology based on a 2-step pipeline ADC with 4b and 7b in the first and second stage for high conversion rate and low power consumption. Analog circuits such as comparator and residue amplifier are shared between channels to minimize power consumption, chip area, and offset mismatch which limits the ADC linearity in the conventional T-I architecture, without any calibration scheme. The TSPC D flip-flop with a short propagation delay and a small number of transistors is used in the SAR logic instead of the conventional static D flip-flop to achieve high-speed SAR operation as well as low power consumption and chip area. Three separate reference voltage drivers for 4b SAR, 7b SAR circuits and a single residue amplifier prevent undesirable disturbance among the reference voltages due to each different switching operation and minimize gain mismatch between channels. High-frequency clocks with a controllable duty cycle are generated on chip to eliminate the need of external complicated high-frequency clocks for SAR operation. The prototype ADC in a 45nm CMOS technology demonstrates a measured DNL and INL within 0.69LSB and 0.77LSB, with a maximum SNDR and SFDR of 50.9dB and 59.7dB at 120MS/s, respectively. The proposed ADC occupies an active die area of 0.36mm2 and consumes 8.8mW at a 1.1V supply voltage.