• Bulletin of the Korean Chemical Society
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• v.19 no.10
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• pp.1073-1079
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• 1998

The potential energy surface (PES) of the non-identical SN2 reactions, F- + CH3Cl → FCH3 + Cl and (H2O)F + CH3Cl → FCH3 + Cl-(H2O), were investigated with ab initio MO calculations. The ab initio minimum energy reaction path (MERP) of the F- + CH3Cl → FCH3 + Cl- was obtained and it was expressed with an intermediate variable t. The ab initio PES was obtained near around t. Analytical potential energy function (PEF) was determined as a function of the t in order to reproduce the ab initio PES. Based on Morse-type potential energy function, a Varying Repulsive Cores Model (VRCM) was proposed for the description of the bond forming and the bond breaking which occur simultaneously during the SN2 reaction. The MERP calculated with the PEF is well agreed with the ab initio MERP and PEF could reproduce the ab initio PES well. The potential parameters for the interactions between the gas phase molecules in the reactions and water were also obtained. ST2 type model was used for the water.

• Journal of Surface Science and Engineering
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• v.34 no.5
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• pp.516-521
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• 2001

Dry etching of Si wafer and $SiO_2$ layers was performed using He/Cl$_2$ mixture plasma by diode-type reactive ion etcher (RIE) system. For Si etching, the Cl molecules react with the Si molecules on the surface and become chemically stable, indicating that the reactants need energetic ion bombardment. During the ion assisted desorption, energetic ions would damage the photoresist (PR) and produce the bad etch Si-profile. Moreover, we have examined the characteristics of the Cl-Si reaction system, and developed the new fabrication procedures with a $Cl_2$/He mixture for Si and $SiO_2$-etching. The developed novel fabrication procedure allows the RIE to be unexpensive and useful a Si deep etching system. Since the etch rate was proved to increase linearly with fHe and the selectivity of Si to $SiO_2$ etch rate was observed to be inversely proportional to fHe.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.4
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• pp.39-47
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• 2004

In mold machining, there are many concave machining regions where chatter and tool deflection occur since MRR(material removal rate) increases as curvature increases even though cutting speed and depth of cut are constant. Boolean operation between stock and tool model is widely used to compute MRR in NC milling simulation. In finish cutting, the side step is reduced to about 0.3mm and tool path length is sometimes over loom, so Boolean operation takes long computation time and includes much error if the resolution of stock and tool model is larger than the side step. In this paper, curvature of CL (cutter location) surface and side step of tool path is used to compute the feedrate for constant MRR machining. The data structure of CL surface is Z-map generated from NC tool path. The algorithm to get local curvature from discrete data was developed and applied to compute local curvature of CL surface. The side step of tool path was computed by point density map which includes cutter location point density at each grid element. The feedrate computed from curvature and side step is inserted to new tool path to regulate MRR. The resultants were applied to feedrate optimization system which generates new tool path with feedrate from NC codes for finish cutting. The system was applied to the machining of speaker and cellular phone mold. The finishing time was reduced to 12.6%, tool wear was reduced from 2mm to 1.1mm and chatter marks and over cut on corner were reduced, compared to the machining by constant feedrate. The machining time was shorter to 17% and surface quality and tool was also better than the conventional federate regulation using curvature of the tool path.

• Journal of Surface Science and Engineering
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• v.42 no.4
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• pp.169-172
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• 2009

We investigated the dry-etching mechanism of the TiN thin film using a $Cl_2$/Ar inductively coupled plasma system. To understand the effect of the $Cl_2$/Ar gas mixing ratio, we etched the TiN thin film by varying $Cl_2$/Ar gas mixing ratio. When the gas mixing ratio was 100% $Cl_2$, the highest etch rate was obtained. The chemical reaction on the surface was investigated with X-ray photoelectron spectroscopy (XPS). Scanning electron microscopy (SEM) was used to examine etched profiles of the TiN thin film.

• Journal of Surface Science and Engineering
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• v.34 no.1
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• pp.39-48
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• 2001

Fe-Cr-Al alloy has been studied for application in automobile muffler materials due to good corrosion and oxidation resistance. In order to develop the automobile muffler materials, corrosion behaviors of electron beam physical vapor deposition (EB-PVD) coated surface of muffler matericls of muffler materials were investigated using potentiostat. For 0.1M NaCl solution, corrosion potential and pitting potential of Fe-20Cr-10Al was higher than that of Fe-5Cr- 10Al samples. Especially, in the case of Ti and Nb coated samples, pitting potential increased remarkably compared with non-coated samples. For 0.1M $CaCl_2$ solution, Ti-coated Fe-20Cr-10Al showed remarkably improved pitting corrosion resistance in comparison with non-coated Fe-20Cr-10Al and Fe-5Cr-10Al. The number and size of pits were decreased in the case of Ti coated samples in the 0.1M NaCl and 0.1M $CaCl_2$ solution.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.26-29
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• 2001

$SrBi_2Ta_2O_{9}$ thin films were etched at high-density $Cl_2/CF_4/Ar$ in inductively coupled plasma system. The etching of SBT thin films in $Cl_2/CF_4/Ar$ were chemically assisted reactive ion etching. The maximum etch rate was 1300 $\AA$/min at 900W in $Cl_2(20)/CF_4(20)/Ar(80)$. As rf power increase, radicals (F, Cl) and ion(Ar) increase. The influence of plasma induced damage during etching process was investigated in terms of the surface morphology and th phase of X-ray diffraction. The chemical residue was investigated with secondary ion mass sperometry.

• International Journal of Human Ecology
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• v.14 no.2
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• pp.93-103
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• 2013

This study investigated the relationship of clothing microclimate and physiological responses in order to examine the layering effects on the clothing microclimate as an index to predict clothing thermal insulation ($I_{cl}$). Experiments were conducted in a $15^{\circ}C$ environment on six physically active males. Increased clothing layers resulted in higher mean temperature inside the clothing ($\bar{T}_{cl}$) and $I_{cl}$. The $I_{cl}$ had a high correlation with: $\bar{T}_{cl}$ (r = 0.556), the difference between the innermost surface temperature and the outermost surface temperature at the chest (DST) (r = 0.549) and the temperature inside clothing at the abdomen (r = 0.478). $\bar{T}_{cl}$ had the highest correlation with the temperature inside clothing at the abdomen (r = 0.889). $\bar{T}_{cl}$ also had the highest correlation with $\bar{T}_{sk}$ (r = 0.860). The results showed that the relationship between $I_{cl}$ and $\bar{T}_{cl}$ was linear (p < .01). Thermal comfort had a negative correlation with $\bar{T}_{cl-thigh}$ (r=-0.411) and $\bar{T}_{cl}$ (r = -0.323) (p < .01.)

• Korean Chemical Engineering Research
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• v.53 no.3
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• pp.397-400
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• 2015

The effects of surface treatment method of unreacted N-[3-(trimethoxysilyl)propyl]ethylenediamine (2NS), $N^1$-(3-trimethoxysilylpropyl)diethylenetriamine (3NS), and 3-cyanopropyltriethoxysilane (1NCy) after grafting on the surface of silica and of the surface treatment temperature on ethylene polymerization were investigated. The Zr content of supported catalyst employing filtering method was higher than that of washing method, and the activities of supported catalysts prepared by washing method were higher than those of filtering methods significantly. Regardless of surface treatment methods the activities were in order by $SiO_2/2NS/(n-BuCp)_2ZrCl_2>SiO_2/1NCy/(n-BuCp)_2ZrCl_2>SiO_2/3NS/(n-BuCp)_2ZrCl_2$. The ethylene polymerization activity was increased as the surface treatment temperature of aminosilane on silica increased.

• Korean Chemical Engineering Research
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• v.50 no.3
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• pp.427-434
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• 2012

Waterborne polyurethane dispersions (PUD) were synthesized from poly (carbonate diol), isophrone diisocyanate and dimethylol propionic acid at different NCO/OH molar ratios. Subsequently, the PUD was mixed with different types of alkali metal salts ($LiClO_4$, $NaClO_4$, and $KClO_4$) to prepare antistatic waterborne polyurethane coating solutions. Effects of the types and amounts of alkali metal salts were investigated on the surface resistances of the resulting coating films. The surface resistances of coating films were decreased with increasing the amounts of alkali metal salts added in the PUD. The coating films prepared with the same amount of alkali metal salts showed increased ionic conductivity with the order of $LiClO_4$ > $NaClO_4$ > $KClO_4$. Also, the surface resistances of coating films were increased with increasing the molar ratios of NCO/OH in the PUD.

• Korean Chemical Engineering Research
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• v.56 no.2
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• pp.291-296
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• 2018

Direct synthesis of methylchlorosilanes was developed by Rochow with addition of copper on the silicon surface as a catalyst and many research were followed. Most of research were focused on the increase of reaction activity through addition of promoters and concentrated on the increase of selectivity of DMDC. However, there are very few studies about the reaction mechanism. Although formation of DMDC was explained in literature, formation of other silanes were not mentioned at all. This reseach focused on the explanation about formation of all silanes obtained during direct reaction and TPD. Reaction paths were proposed by means of dissociative adsorption of methyl chloride and spillover of surface Cl and H. Surface silicon sites were considered as $=SlCl_2$ and $=Sl(CH_3)Cl$. The synthesis of all methylchlorosilanes were explained by the adsorption of methyl group on the silicon sites and by the surface diffusion of nearby Cl and H. The proposed reaction mechanism explains the formation of all silanes during the reaction and also during the TPD process.