• 한국표면공학회지
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• 제30권2호
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• pp.111-120
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• 1997

The growth kinetion of $CuCl_x$ layer on Cu was investigated using $Cl_2$ gas with/without plasma. The etching kinetics ofit was also studied, in which PEt3 gas as well as $Cl_2$ gas were used. when plasma and DC bias were applied, not only the growth rate of $CuCl_x$ layer but also the surface concentration of Cl in $CuCl_x$ layer drastically increased. The growth mode is divided into three regimes, where the thinkness $CuCl_x$ layer ise proportional to t, lo9g $T^{1/2}$ , respectively, whether plasma, is applied or not. These three regime. It is also identified that the eath rate of Cu is drastically increased as the $Cl_2$ pressure is increased. However, when plasma and DC bias were applied, the etching rate is decreased, and ClCu-P-U layer is formed. in addition, as the etching time is increased, the surface concentration of Cl is increased and $CuCl_2$ formed partially.

• 대한기계학회논문집A
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• 제30권7호
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• pp.800-808
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• 2006

In this paper, the CL surface transformation approach that inversely deforms the 3-axis tool path generated on the deformed CL surface to a 5-axis tool path is introduced. The proposed CL surface transformation approach can be used if the orientation of the cutter is predefined. The CL surface based 3-axis tool path generation algorithms that have been improved well can be applied to the f-axis tool path generation.

• 한국지구과학회지
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• 제43권6호
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• pp.712-736
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• 2022

To understand the characteristics of low-level clouds (CLs), environmental variables are composited on each CL using individual surface observations and six-hourly upper-air meteorologies around the globe. Individual CLs has its own distinct environmental conditions. Over the eastern subtropical and western North Pacific Ocean in JJA, stratocumulus (CL5) has a colder sea surface temperature (SST), stronger and lower inversion, and more low-level cloud amount (LCA) than the climatology whereas cumulus (CL12) has the opposite characteristics. Over the eastern subtropical Pacific, CL5 and CL12 are influenced by cold and warm advection within the PBL, respectively but have similar cold advection over the western North Pacific. This indicates that the fundamental physical process distinguishing CL5 and CL12 is not the horizontal temperature advection but the interaction with the underlying sea surface, i.e., the deepening-decoupling of PBL and the positive feedback between shortwave radiation and SST. Over the western North Pacific during JJA, sky-obscuring fog (CL11), no low-level cloud (CL0), and fair weather stratus (CL6) are associated with anomalous warm advection, surface-based inversion, mean upward flow, and moist mid-troposphere with the strongest anomalies for CL11 followed by CL0. Over the western North Pacific during DJF, bad weather stratus (CL7) occurs in the warm front of the extratropical cyclone with anomalous upward flow while cumulonimbus (CL39) occurs on the rear side of the cold front with anomalous downward flow. Over the tropical oceans, CL7 has strong positive (negative) anomalies of temperature in the upper troposphere (PBL), relative humidity, and surface wind speed in association with the mesoscale convective system while CL12 has the opposite anomalies and CL39 is in between.

• 한국경영과학회:학술대회논문집
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• 대한산업공학회/한국경영과학회 2000년도 춘계공동학술대회 논문집
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• pp.389-392
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• 2000

Gouge-free tool-path generation is an important issue in mold & die machining and researches on cutter interference avoidance can be found in many articles. One of the various methods is construction of tool-offlet surface or cutter-location (CL) surface on which the cutter-center point (CL-point) locates. Provided that the CL surface is represented in a suitable form, cutter-interference avoidance can be performed without the burden of computing CL data for every cutter-contact (CC) point. In the paper, various methods of constructing a CL surface in the z-map form are presented, where z-map is a special form of discrete nonparametric representation in which the height values at grid points on the xy-plane are stored as a 2D array z［i,j］.

• 대한산업공학회지
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• 제26권4호
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• pp.325-335
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• 2000

Gouge-free tool-path generation is an important issue in mold & die machining and researches on cutter interference avoidance can be found in many articles. One of the various methods is construction of tool-offset surface of cutter-location (CL) surface on which the cutter-center point (CL-point) locates. Provided that the CL surface is represented in a suitable form, cutter-interference avoidance can be performed without the burden of computing CL data for every cutter-contact (CC) point. In the paper, various methods of constructing a CL surface in the z-map form are presented, where z-map is a special form of discrete nonparametric representation in which the height values at grid points on the xy-plane are stored as a 2D array z[i,j].

• Bulletin of the Korean Chemical Society
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• 제34권4호
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• pp.1221-1224
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• 2013

The atomic layer deposition (ALD) of $ZrO_2$ was conducted in ultrahigh vacuum (UHV) conditions. The surface was exposed to $ZrCl_4$ and $H_2O$ in sequence and the surface species produced after each step were identified in situ with X-ray photoelectron spectroscopy (XPS). $ZrCl_4$ is molecularly adsorbed at 140 K on the $SiO_2$/Si(111) surface covered with OH groups. When the surface is heated to 300 K, $ZrCl_4$ loses two Cl atoms to produce $ZrCl_2$ species. Remaining Cl atoms of $ZrCl_2$ species can be completely removed by exposing the surface to $H_2O$ at 300 K followed by heating to 600 K. The layer-by-layer deposition of $ZrO_2$ was successfully accomplished by repeated cycles of $ZrCl_4$ dosing and $H_2O$ treatment.

• 대한기계학회논문집A
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• 제29권6호
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• pp.895-903
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• 2005

In this paper, we present a cutter location (CL) surface deformation approach for constant scallop height tool path generation from triangular mesh. The triangular mesh model of the stereo lithography (STL) format is offset to the CL surface and then deformed in accordance with the deformation vectors, which are computed by the slope and the curvature of the CL surface. In addition, the tool path which is computed by slicing the deformed CL surface is inversely deformed by those same deformation vectors to a tool path with a constant scallop height. The proposed method is implemented, and a tool path generated by the proposed method is tested by simulation and by numerical control (NC) machining. The scallop height was found to be constant over the entire machined surface, demonstrating much better quality than that of mesh slicing, under the same constraints for machining time.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.45-48
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• 2000

High dielectric (Ba,Sr)TiO$_3$ thin films were etched in an inductively coupled plasma (ICP) as a function of C1$_2$/Ar gas mixing ratio. Under Cl$_2$(20)/Ar(80), the maximum etch rate of the BST films was 400$\AA$/min and selectivities of BST to Pt and PR were obtained 0.4 and 0.2, respectively. We investigated the etched surface of BST by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and x-ray diffraction (XRD). From the result of XPS analysis, we found that residues of Ba-Cl and Ti-Cl bonds remained on the surface of the etched BST for high boiling point. The surface roughness decreased as Cl$_2$ increases in Cl$_2$/Ar plasma because of non-volatile etching products. This changed the nature of the crystallinity of BST. From the result of XRD analysis, the crystalliility of etched BST film maintained as similar to as-deposited BST under Ar only and Cl$_2$(20)/Ar(80). However, (100) orientation intensity of etched BST film abruptly decreased at Cl$_2$ only plasma. It was caused that Cl compounds were redeposited on the etched BST surface and damaged to crystallinity of BST film during the etch process.

• 한국진공학회지
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• 제8권1호
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• pp.63-69
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• 1999

고밀도 플라즈마 source인 helical resonator의 특성을 알기 위해 Langmuir probe를 사용하여 특성 변수들-플라즈마 밀도, 전자 온도, 이온 전류 밀도-의 값을 측정하였다. 또한 $Cl_2$/poly-Si 시스템에서의 식각반응 메카니즘을 규명하기 위해 Si와 SiCi의 에미션 시그날을 분석하였다. $Cl_2$/poly-Si 식각 시스템계에서는 화학식각에 의한 반응이 물리식각에 의한 반응보다 주됨을 알 수 있다. 또한 폴리 실리콘 내의 불순물 P농도가 증가함에 따라 식각의 화학반응 산출물인 SiCl의 양이 물리식각 산출물인 Si의 양보다 급격히 증가하는 양상을 보였다. 이는 표면 반응중 형성된 Si-Cl 결합을 통해 실리콘 내부의 전자들이 Cl쪽으로 이동함으로써 Si-Cl은 더욱 유동적이며 이온화된 특성을 갖게 되고, 따라서 $Cl_2\;^+$/와 같은 에천들이 표면에 흡착될 확률이 커져 $SiCl_x$의 형성을 용이하게 하기 때문으로 생각된다. 즉 불순물 P농도가 증가함에 따라 표면의 Si를 제거하는데는 물리식각보다 화학시각이 더욱 큰 역할을 하는 것으로 밝혀졌다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 1998년도 춘계학술발표회 초록집
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• pp.39-40
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• 1998