• Journal of Surface Science and Engineering
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• v.30 no.2
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• pp.111-120
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• 1997

The growth kinetion of $CuCl_x$ layer on Cu was investigated using $Cl_2$ gas with/without plasma. The etching kinetics ofit was also studied, in which PEt3 gas as well as $Cl_2$ gas were used. when plasma and DC bias were applied, not only the growth rate of $CuCl_x$ layer but also the surface concentration of Cl in $CuCl_x$ layer drastically increased. The growth mode is divided into three regimes, where the thinkness $CuCl_x$ layer ise proportional to t, lo9g $T^{1/2}$ , respectively, whether plasma, is applied or not. These three regime. It is also identified that the eath rate of Cu is drastically increased as the $Cl_2$ pressure is increased. However, when plasma and DC bias were applied, the etching rate is decreased, and ClCu-P-U layer is formed. in addition, as the etching time is increased, the surface concentration of Cl is increased and $CuCl_2$ formed partially.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.30 no.7 s.250
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• pp.800-808
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• 2006

In this paper, the CL surface transformation approach that inversely deforms the 3-axis tool path generated on the deformed CL surface to a 5-axis tool path is introduced. The proposed CL surface transformation approach can be used if the orientation of the cutter is predefined. The CL surface based 3-axis tool path generation algorithms that have been improved well can be applied to the f-axis tool path generation.

• Journal of the Korean earth science society
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• v.43 no.6
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• pp.712-736
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• 2022

To understand the characteristics of low-level clouds (CLs), environmental variables are composited on each CL using individual surface observations and six-hourly upper-air meteorologies around the globe. Individual CLs has its own distinct environmental conditions. Over the eastern subtropical and western North Pacific Ocean in JJA, stratocumulus (CL5) has a colder sea surface temperature (SST), stronger and lower inversion, and more low-level cloud amount (LCA) than the climatology whereas cumulus (CL12) has the opposite characteristics. Over the eastern subtropical Pacific, CL5 and CL12 are influenced by cold and warm advection within the PBL, respectively but have similar cold advection over the western North Pacific. This indicates that the fundamental physical process distinguishing CL5 and CL12 is not the horizontal temperature advection but the interaction with the underlying sea surface, i.e., the deepening-decoupling of PBL and the positive feedback between shortwave radiation and SST. Over the western North Pacific during JJA, sky-obscuring fog (CL11), no low-level cloud (CL0), and fair weather stratus (CL6) are associated with anomalous warm advection, surface-based inversion, mean upward flow, and moist mid-troposphere with the strongest anomalies for CL11 followed by CL0. Over the western North Pacific during DJF, bad weather stratus (CL7) occurs in the warm front of the extratropical cyclone with anomalous upward flow while cumulonimbus (CL39) occurs on the rear side of the cold front with anomalous downward flow. Over the tropical oceans, CL7 has strong positive (negative) anomalies of temperature in the upper troposphere (PBL), relative humidity, and surface wind speed in association with the mesoscale convective system while CL12 has the opposite anomalies and CL39 is in between.

• Proceedings of the Korean Operations and Management Science Society Conference
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• 2000.04a
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• pp.389-392
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• 2000

Gouge-free tool-path generation is an important issue in mold & die machining and researches on cutter interference avoidance can be found in many articles. One of the various methods is construction of tool-offlet surface or cutter-location (CL) surface on which the cutter-center point (CL-point) locates. Provided that the CL surface is represented in a suitable form, cutter-interference avoidance can be performed without the burden of computing CL data for every cutter-contact (CC) point. In the paper, various methods of constructing a CL surface in the z-map form are presented, where z-map is a special form of discrete nonparametric representation in which the height values at grid points on the xy-plane are stored as a 2D array z［i,j］.

• Journal of Korean Institute of Industrial Engineers
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• v.26 no.4
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• pp.325-335
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• 2000

Gouge-free tool-path generation is an important issue in mold & die machining and researches on cutter interference avoidance can be found in many articles. One of the various methods is construction of tool-offset surface of cutter-location (CL) surface on which the cutter-center point (CL-point) locates. Provided that the CL surface is represented in a suitable form, cutter-interference avoidance can be performed without the burden of computing CL data for every cutter-contact (CC) point. In the paper, various methods of constructing a CL surface in the z-map form are presented, where z-map is a special form of discrete nonparametric representation in which the height values at grid points on the xy-plane are stored as a 2D array z[i,j].

• Bulletin of the Korean Chemical Society
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• v.34 no.4
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• pp.1221-1224
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• 2013

The atomic layer deposition (ALD) of $ZrO_2$ was conducted in ultrahigh vacuum (UHV) conditions. The surface was exposed to $ZrCl_4$ and $H_2O$ in sequence and the surface species produced after each step were identified in situ with X-ray photoelectron spectroscopy (XPS). $ZrCl_4$ is molecularly adsorbed at 140 K on the $SiO_2$/Si(111) surface covered with OH groups. When the surface is heated to 300 K, $ZrCl_4$ loses two Cl atoms to produce $ZrCl_2$ species. Remaining Cl atoms of $ZrCl_2$ species can be completely removed by exposing the surface to $H_2O$ at 300 K followed by heating to 600 K. The layer-by-layer deposition of $ZrO_2$ was successfully accomplished by repeated cycles of $ZrCl_4$ dosing and $H_2O$ treatment.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.29 no.6 s.237
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• pp.895-903
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• 2005

In this paper, we present a cutter location (CL) surface deformation approach for constant scallop height tool path generation from triangular mesh. The triangular mesh model of the stereo lithography (STL) format is offset to the CL surface and then deformed in accordance with the deformation vectors, which are computed by the slope and the curvature of the CL surface. In addition, the tool path which is computed by slicing the deformed CL surface is inversely deformed by those same deformation vectors to a tool path with a constant scallop height. The proposed method is implemented, and a tool path generated by the proposed method is tested by simulation and by numerical control (NC) machining. The scallop height was found to be constant over the entire machined surface, demonstrating much better quality than that of mesh slicing, under the same constraints for machining time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.45-48
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• 2000

High dielectric (Ba,Sr)TiO$_3$ thin films were etched in an inductively coupled plasma (ICP) as a function of C1$_2$/Ar gas mixing ratio. Under Cl$_2$(20)/Ar(80), the maximum etch rate of the BST films was 400$\AA$/min and selectivities of BST to Pt and PR were obtained 0.4 and 0.2, respectively. We investigated the etched surface of BST by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and x-ray diffraction (XRD). From the result of XPS analysis, we found that residues of Ba-Cl and Ti-Cl bonds remained on the surface of the etched BST for high boiling point. The surface roughness decreased as Cl$_2$ increases in Cl$_2$/Ar plasma because of non-volatile etching products. This changed the nature of the crystallinity of BST. From the result of XRD analysis, the crystalliility of etched BST film maintained as similar to as-deposited BST under Ar only and Cl$_2$(20)/Ar(80). However, (100) orientation intensity of etched BST film abruptly decreased at Cl$_2$ only plasma. It was caused that Cl compounds were redeposited on the etched BST surface and damaged to crystallinity of BST film during the etch process.

• Journal of the Korean Vacuum Society
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• v.8 no.1
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• pp.63-69
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• 1999

The characteristic parameters of high density plasma source (Helical Resonator) have been measured with Langmuir probe to get the plasma density electron temperature, ion current density, etc. Optical emission spectra of Si and SiCl have been analyzed in $Cl_2$$/poly-Si system to elucidate etching mechanism. In this system, the main reaction to remove silicon atoms on the surface is proceeding mostly through chemical reaction, not pure physical reaction. The emission intensity of SiCl (chemical etching product) increases much faster than Si (pure physical etching product) with increasing the concentration of impurities (P). This is due to the electron transfer from substrate to the surface via Si-Cl bond. As a result, Si-Cl bond becomes more ionic and mobile, therefore the Cl-containing etchant forms $SiCl_x$ with surface more easily. Consequently, for the removal of Si atom from poly silicon surface, the chemical etching is more favorable than physical etching with increasing P concentrations.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1998.05a
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• pp.39-40
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• 1998