• Title/Summary/Keyword: CIGS Solar Cells

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Correlation Properties between Absorber Layer of Cu(InGa)$Se_2$ Thin Films and Sodium (CIGS 박막 태양전지의 광흡수층과 Sodium과의 상관특성 분석)

  • Kim, S.K.;Lee, J.C.;Kang, K.H.;Yoon, K.H.;Park, L.J.;Song, J.;Han, S.O.
    • Proceedings of the KIEE Conference
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    • 1999.07d
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    • pp.1729-1731
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    • 1999
  • The effect of Na on the structural and electrical properties of CIGS films were studied and their effects on the CIGS/Mo thin film solar cells were investigated. Soda-lime glass and Corning glass were used as substrates to compare the effect of Na diffusion into CIGS film. The resistivity of CIGS films was not changed in the Cu-poor region due to diffusion of Na from soda-lime glass but was mainly determined by the surface resitivity controlled by excess Na.

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A Study on the CIGS cells with Na-doped Mo back contact (Na이 첨가된 Mo 전극을 이용한 CIGS 박막 태양전지 연구)

  • Yun, Jae-Ho;Kim, Ki-Hwan;Kim, Min-Sik;Ahn, Byung-Tae;Ahn, Se-Jin;Lee, Jeong-Chul;Yoon, Kyung-Hoon
    • 한국신재생에너지학회:학술대회논문집
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    • 2006.06a
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    • pp.218-221
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    • 2006
  • The photovoltaic properties of CIES cells on alumina substrate were improved by using the Na-doped Mo as theabotom layer of hilo back contact. Na was supplied to the CIGS bulk region from alumina/Na-doped Mo/Mo/alumina? structure, as same assimilar to the Na diffusion from soda-lime glass. The content diffusion of Na from Na-doped bfo was smaller more controlled than that from SLG. These Our results indicate that Na-doped bfo act as Na source material and contents of Na amount can be controlled without the use of an alkali barrier layer. The best CIGS solar cell with conversion efficiency of 13.34%, $J_{sc}=34.62mA/cm^2,\;V_{oc}=0.58V$ and FF=66% for an active area of $0.45cm^2$ on the alumina substrate was obtained in the condition of for 100nm Na-doped Mo/1000nm Mo.

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Effects of substrate temperature on the performance of $Cu_2ZnSnSe_4$ thin film solar cells fabricated by co-evaporation technique (동시진공 증발법을 이용한 $Cu_2ZnSnSe_4$ 박막 태양전지의 제조와 기판온도가 광전압 특성에 미치는 영향)

  • Jung, Sung-Hun;Ahn, Se-Jin;Yun, Jae-Ho;Gwak, Ji-Hye;Kim, Dong-Hwan;Yoon, Kyung-Hoon
    • 한국신재생에너지학회:학술대회논문집
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    • 2009.06a
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    • pp.85-87
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    • 2009
  • Despite the success of $Cu(In,Ga)Se_2$ (CIGS) based PV technology now emerging in several industrial initiatives, concerns about the cost of In and Ga are often expressed. It is believed that the cost of those elements will eventually limit the cost reduction of this technology. one candidate to replace CIGS is $Cu_2ZnSnSe_4$ (CZTSe), fabricated by co-evaporation technique. Effects of substrate temperature of $Cu_2ZnSnSe_4$ absorber layer on the performance of thin films solar cells were investigated. As substrate temperature increased, the grain size of $Cu_2ZnSnSe_4$ films increased presumably. At a optimal condition of substrate temperature is $320^{\circ}C$, the solar cell shows a conversion efficiency of 1.79% with $V_{OC}$ of 0.213V, JSC of $16.91mA/cm^2$ and FF of 49.7%.

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Effect of Temperature on the Characteristics of ZnO Thin Film Applied to the Window Layer of CIGS Solar Cells (CIGS 태양전지의 윈도우 층에 적용되는 ZnO 박막 특성에 관한 온도의 영향)

  • Jung, Kyung Seo;Kwon, Sang Jik;Cho, Eou Sik
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.4
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    • pp.304-308
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    • 2013
  • For the application to the window layer of $Cu(In,Ga)Se_2$(CIGS) solar cell, zinc oxide(ZnO) thin film was deposited at various temperatures by in-line pulsed DC sputtering. From the structural, optical, and electrical investigation and analysis, it was possible to obtain the lower thickness, the lower resistivity, and the higher transmittance at a higher process temperature. The energy band gap of ZnO was calculated using the transmittance data and was analyzed in terms of the dependency on temperature. From the X-ray diffraction(XRD) results, it was possible to conclude that a dominant peak was found about $34.2{\sim}34.6^{\circ}$(111) and crystallinity was obtained at a temperature above $150^{\circ}C$.

A Study on the Cu-based $I-III-VI_2$ Compound Thin Film Solar Cells ($CulnSe2$계 화합물 박막 태양전지 연구)

  • Yun JaeHo;Ahn SeJin;Kim SeokKi;Lee JeongChul;Song JinSoo;Kim Ki Hwan;Ahn Byung Tae;Yoon KyungHoon
    • New & Renewable Energy
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    • v.1 no.2 s.2
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    • pp.6-10
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    • 2005
  • [ $CulnSe2$ ]계 화합물은 직접천이형 반도체로 광흡수계수가 매우 높아 박막형 태양전지 제조에 매우 유리하다. 또한 화학적으로 안정하며 Ga, Al 등을 첨가하면 에너지 금지대폭을 조절할 수 있어 Wide Bandgap 태양전지 및 탠덤구조 태양전지를 제조하기에도 용이하다. CIS 물질에서 In을 $20-30\%$ 정도 치환한 $Cu(In,\;Ga)Se_2(CIGS)$ 태양전지의 경우 19.5%의 세계 최고 효율을 보고하고 있으며 이는 다결정 실리콘 태양전지의 효율과 비슷한 수준이다. 본 연구에서는 동시 질공증발법을 이용하여 증착한 CIGS 박막 및 $CuGaSe_2(CGS)$ 박막을 이용하여 태양전지를 제조하였다. 공정의 재현성 및 결정립계가 큰 광흡수층 제조를 위하여 실시간 기판 온도 모니터링 시스템을 도입하였으며 버퍼층으로는 용액성장한 CdS 박막을 사용하였다. SLG/MO/CIGS(CGS)/CdS/ZnO/Al 구조의 태양전지를 제조하여 면적 $0.5cm^2$에서 각각 $17\%(CIGS)$$7\%(CGS)$의 효율을 얻었다.

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Post-Annealing Effect of GZO/ZnO/CdS Window Layers for CIGS Solar Cells

  • Park, Jun-Tae;Hwang, Jung-Hwan;Jeong, Su-Chang;Choe, Yun-Su;Choe, Hyeon-Gwang;Jeon, Min-Hyeon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.309-309
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    • 2013
  • 기존의 CIGS 태양전지는 window 층(GZO/ZnO/CdS)에서의 투과 및 반사 손실을 줄이기 위하여 MgF2를 이용한 AR (Anti Reflection) 층을 적용하여 cell을 제작하고 있다. 현재 단위공정을 줄이고 시간적 경제적 비용을 절감하기위해 무반사 코팅층 없이 표면의 구조를 변화 시키거나 CIGS 태양전지의 window 층만으로 cell 구조에 적용하는 연구가 많이 진행되고 있다. 본 연구는 AR층과 window층 역할을 동시에 만족하는 일체화된 window층 두께를 설계하고 성장한 후, window층의 열처리 전후의 구조적, 광학적 및 전기적 특성을 비교 평가하였다. Macleod simulation을 이용하여 window 층을 설계한 후, RF magnetron sputtering법을 이용하여 상온성장 시킨 후 N2 분위기에서 후열처리 조건에 따른 박막의 구조적, 전기적 및 광학적 특성을 변화를 X-ray diffractometer, Field emission-scanning electron microscope, Atomic force microscopy, 4 point probe, Hall 측정, 투과도 및 반사도등으로 비교 평가하였다.

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Effect of Preparation Condition of Precursor Thin Films on the Properties of CZTS Solar Cells

  • Seong, Si-Jun;Park, Si-Nae;Kim, Dae-Hwan;Gang, Jin-Gyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.318.1-318.1
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    • 2013
  • Nowadays Cu2ZnSnS4 (CZTS) solar cell is attracting a lot of attention as a strong alternative to CIGS solar cell due to nontoxic and inexpensive constituent elements of CZTS. From various processes for the fabrication of CZTS solar cell, solution-based deposition of CZTS thin films is well-known non-vacuum process and many researchers are focusing on this method because of large-area deposition, high-throughput, and efficient material usage. Typically the solution-based process consists of two steps, coating of precursor solution and annealing of the precursor thin films. Unlike vacuum-based deposition, precursor solution contains unnecessary elements except Cu, Zn, Sn, and S in order to form high quality precursor thin films, and thus the precise control of precursor thin film preparation is essential for achieving high efficient CZTS solar cells. In this work, we have investigated the effect of preparation condition of CZTS precursor thin films on the performance of CZTS solar cells. The composition of CZTS precursor solution was controlled for obtaining optimized chemical composition of CZTS absorber layers for high-efficiency solar cells. Pre-annealing process of the CZTS precursor thin films was also investigated to confirm the effect of thermal treatment on chemical composition and carbon residues of CZTS absorber layers. The change of the morphology of CZTS precursor thin film by the preparation condition was also observed.

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