• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.8
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• pp.701-705
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• 2007

The incorporation of N in a-C film is able to improve the friction coefficient and the adhesion to various substrates. In this study, a-C:N films were deposited on Si and steel substrates by closed-field unbalanced magnetron (CFUBM) sputtering system in $Ar/N_2$ plasma. The lubricant characteristics was investigated for a-C:N deposited with total working pressure from 4 to 7 mTorr. We obtained high hardness up to 24GPa, friction coefficient lower than 0.1 and the smooth surface of having the extremely low roughness (0.16 nm). The physcial properties of a-C:N thin film are related to the increase of cross-linked $sp^2$ bonding clusters in the film. However, the decrease of hardness, elastic modulus and the increase of surface roughness, friction coefficient with the increase of $N_2$ partial pressrue might be due to the effect of energetic ions as a result of the increase of ion bombardment with the increase of ion density in the plasma.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.8
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• pp.706-710
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• 2007

Ti-containing amorphous carbon (a-C:Ti) films shows attractive mechanical properties such as low friction coefficient, good adhesion to various substrate and high wear resistance. The incorporation of titanium in a-C films is able to improve the electrical conductivity, friction coefficient and adhesion to various substrates. In this study, a-C:Ti films were depositied on Si wafer by closed-field unbalanced magnetron (CFUBM) sputtering system composed two targets of carbon and titanium. The tribological properties of a-C:Ti films were investigated with the increase of DC bias voltage from 0 V to - 200 V. The hardness and elastic modulus of films increase with the increase of DC bias voltage and the maximum hardness shows 21 GPa. Also, the coefficient of friction exhibites as low as 0.07 in the ambient. In the result, the a-C:Ti film obtained by CFUBM sputtering method improved the tribological properties with the increase of DC bias volatage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.366-366
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• 2008

Amorphous carbon (a-C) is an interesting materials and its characteristics can be varied by tuning it $sp^3$ fractions. The $sp^3$ fraction in a-C films depends on the kinetic energy of the deposited carbon ions. In this work, a-C films was synthesized on Si(100) and glass substrates at room temperature by closed-field unbalanced magnetron (CFUBM) sputtering with the increase of graphite target power density. The structural and physical properties of films were investigated by using Raman spectroscopy, X-ray photoelectron spectrometer (XPS), nano- indentation, atomic force microscope (AFM) and contact-angle measurement. We obtained the good tribological properties, such as high hardness up to 26 GPa., friction coefficient lower than 0.1 and the smooth surface (rms roughness: 0.12 nm). The increase of the physical properties with the increase of target power density are related to the increase of nano-clusters in the carbon network. Also, these results might be due to the increase of the subplantation and resputtering by the increase of ions density in the plasma.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.748-752
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• 2004

The Hydrogenated amorphous carbon (a-C:H) thin films are deposited to fabricate suppored layer on silicon substrate with a closed field unbalanced magnetron(CFUBM) sputtering system. This study focuses on the characteristic of Diamond like carbon (DLC) films and Pb(Zr,Ti)$O_3$ (PZT) films for membrane structure. The deposition rate and the surface roughness of DLC fims decrease with DC bias voltage. hardness is 26 GPa at -200 V. Interface of DLC/Si and Pt/DLC layers was excellent.

• Journal of the Korean Vacuum Society
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• v.16 no.2
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• pp.122-127
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• 2007

In this research, amophous carbon films (a-C, a-C:H, a-C:N) were synthesized by closed-field unbalanced magnetron (CFUBM) sputtering using graphite target. We also fabricated amorphous carbon films with applying negative DC bias voltage of 200 V in during the deposition in working pressure. Also, a-C:H and a-C:N films was synthesized by adding acethylene($C_{2}H_{2}$) and nitrogen(N) gases of 4 and 3 sccm into Ar pressure. The a-C:H film synthesized at -200 V exhibited the maxumum hardness of 26.3 GPa, the smooth surface of 0.1 nm and the good adhesion of 30.5 N. And a-C:N film synthesized at -200 V exhibited at -200 V exhibited the best adhesion of 32 N. This paper examined the effect of $C_{2}H_{2}$ gas, $N_{2}$ gas and negative DC bias voltage as the parameter for improving the physical properties and the relation between structral and physical properties of carbon films.

• Journal of the Korean institute of surface engineering
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• v.40 no.2
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• pp.59-62
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• 2007

Metal containing hydrogen free nanocrystalline structured carbon (Me:nc-C) films were synthesized by closed-field unbalanced magnetron sputtering system (CFUBM). The aim of this study was to determine the relationship between the microstructure and physical properties of Me:nc-C films as a function of the concentration of materials. The film structures were examined by x-ray photoelectron spectroscopy and high resolution transmission electron microscopy. The physical properties of the Me:nc-C films were evaluated by using a 4-point probe. The fraction of graphite clusters was found to be increased by containing titanium and the electrical resistivity decreased with increasing amount of containing.

• Journal of the Korean institute of surface engineering
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• v.38 no.5
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• pp.183-187
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• 2005

The quaternary ZrCrAIN nanocomposite thin films are synthesized by Closed-Field Unbalanced Magnetron Sputtering (CFUBMS). Microstructure and mechanical properties of ZrCrAIN nanocomposite thin films are studied. Grain refinement of ZrCrAIN nanocomposite thin film is occurred by controlling $N_{2}$ partial pressure. Maximum hardness value according to the various $N_{2}$ partial pressures is obtained at 45 GPa. It is also conformed that critical value of the grain size (d) needs to achieve the maximum hardness.

• Journal of the Korean institute of surface engineering
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• v.40 no.1
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• pp.1-5
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• 2007

Quaternary TiZrAlN nanocomposite thin films were synthesized by Closed-Field Unbalanced Magnetron Sputtering (CFUBMS), and their microstructure and mechanical characteristics were examined. The grain refinement of the TiZrAlN nanocomposite thin films was controlled by adjusting the $N_2$ partial pressure. The hardness of the film varied with the $N_2$ partial pressure and the maximum value was obtained approximately 47 GPa. It was also confirmed that there is a critical value of the grain size($d_c$) to need maximum hardness.

• Journal of the Korean institute of surface engineering
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• v.38 no.4
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• pp.137-143
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• 2005

CrSiN coatings of stepwise changing Si concentration were deposited on stainless steel by closed field unbalanced magnetron sputtering (CFUBM) system. Microstructure of the films due to the Si concentration is measured by XRD. The corrosion behavior of CrSiN coatings in deaerated $3.5\%$ NaCl solution was investigated by potentiodynamic test, electrochemical impedance spectroscopy (EIS) and surface analyses. The microstructure of CrSiN film depends on the Si concentration. When Si/(Cr+si) was under $11.7\%$, preferred orientation is defined at CrN(220), CrN(311) and $Cr_2N(111).$ The results of potentiodynamic polarization tests showed that the corrosion current density and porosity decreased with increasing Si/(Cr+si) ratio. EIS measurements showed that the corrosion resistance of Si-bearing CrN was improved by phase transformation of the film, which leads to increase of pore resistance and charge transfer resistance. At the Si(Cr+si) ratio of 20, the Si-bearing CrN possesses the best corrosion resistance due to the highest pore resistance and charge transfer resistance.