• 반도체디스플레이기술학회지
• /
• 제8권4호
• /
• pp.1-5
• /
• 2009

This investigation is applied Taguchi method and the analysis of variance(ANOVA) to the reactive ion etching(RIE) characteristics of $SiO_2$ film coated on a wafer with Experimental Analysis and Optimization of $CF_4/O_2$ Plasma Etching Process mixture. Plans of experiments via nine experimental runs are based on the orthogonal arrays. A $L_9$ orthogonal array was selected with factors and three levels. The three factors included etching time, RF power, gas mixture ratio. The etching rate of the film were measured as a function of those factors. In this study, the etching thickness mean and uniformity of thickness of the RIE are adopted as the quality targets of the RIE etching process. The partial factorial design of the Taguchi method provides an economical and systematic method for determining the applicable process parameters. The RIE are found to be the most significant factors in both the thickness mean and the uniformity of thickness for a RIE etching process.

• 한국전기전자재료학회논문지
• /
• 제11권6호
• /
• pp.472-476
• /
• 1998

The surface reactions of silica film($SiO_2-P_2O_5-B_2O_3-GeO_2$) with fluorocarbon plasma has been studied by using angle -resolved x-ray photoelectron spectroscopy(XPS). It has been confirmed that residual carbon consists of C-C and C-CFx bonds and fluorine mainly binds silicon in the case of etched silica by using $CF_4$ gas plasma. The surface reaction of silica with various fluorocarbon gases, such as $CF_4,C_2F_6 and CHF_3$ were investigated. XPS results showed that though the etching gases were changed, the elements and binding states of the residual layers on the etched silica by using various fluorocarbon gas plasma were nearly the same . This seems to be due to the high volatility of byproducts, that is, $SiF_4 and CO_2$ etc..

• Applied Science and Convergence Technology
• /
• 제23권4호
• /
• pp.169-178
• /
• 2014

Fluid model based numerical analysis is done to simulate a low damage etch back system for 20 nm scale semiconductor fabrication. Etch back should be done conformally with very high material selectivity. One possible mechanism is three steps: reactive radical generation, adsorption and thermal desorption. In this study, plasma generation and transport steps are analyzed by a commercial plasma modeling software package, CFD-ACE+. Ar + $CF_4$ ICP was used as a model and the effect of reactive gas inlet position was investigated in 2D and 3D. At 200~300 mTorr of gas pressure, separated gas inlet scheme is analyzed to work well and generated higher density of F and $F_2$ radicals in the lower chamber region while suppressing ions reach to the wafer by a double layer conducting barrier.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
• /
• pp.197-200
• /
• 2001

Novel Enhanced Inductively Coupled Plasma is applied to etch $SiO_2$. Effect of $O_2$ or Ar addition to $C_{4}F_{8}$ gas is monitored by Optical Emission Spectroscopy and Quadrupole Mass Spectrometer. It is fund that Ar or $O_2$ dilution to $C_{4}F_{8}$ increases F emission intensity and decreases $CF_2$ intensity. However, the ac frequency to the Helmholtz coil decreases the F intensity and thus increases $CF_2$/F ratio. By adjusting the ac frequency, the optimum etch rate and PR to $SiO_2$ selectivity can be obtained in E-lCP.

• 한국인터넷방송통신학회논문지
• /
• 제20권3호
• /
• pp.135-140
• /
• 2020

반도체 공정에서 필수적인 공정가스가 유해가스이기 때문에 이를 친환경적으로 해결하는 것이 필수과제이다. 현재 반도체 공정에서 사용되는 세정기술은 대부분이 1970년대 개발된 과산화수소를 근간으로 하는 습식 세정으로, 표면의 입자를 제거하기 위한 SC-1 세정액은 암모니아와 과산화수소 혼합액을 사용하고 있다. 따라서 환경적 문제를 유발하며, 또한 과도한 용수 사용으로 인한 경제적 문제도 심각하다. 이러한 이유로 본 연구를 통한 개발 제품은 챔버 출구에서 나오는 공정 유해가스를 진공펌프에 입력되기 전 가스를 분해하여 해가 없는 가스로 만들거나 소각과 동시에 펌프에 가스의 성분이 증착되어 반도체 공정의 환경적 문제를 해결하고자 한다. 본 논문에서는 반도제 공정에서 필수 불가결하게 사용되는 유해가스(N2, CF4, SF6⋯. 등)를 사람에게 무해한 가스로 치환하거나 플라스마로 소각하여 환경을 살리고 생산성 향상이 되도록 제안된 CPS (Confined Plasma Source)를 연구하고자 한다.

• 대한화학회지
• /
• 제49권6호
• /
• pp.521-530
• /
• 2005

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2005년도 추계학술발표회 및 workshop
• /
• pp.151-151
• /
• 2005

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 반도체재료
• /
• pp.84-87
• /
• 2001

In this study, $CeO_2$ thin films were etched with a $CF_4/Ar$ gas combination in inductively coupled plasma (ICP), The maximum etch rate of $CeO_2$ thin films is $270{\AA}/min$under $CF_4/(CF_4+Ar)$ of 0.2, 600 W/-200 V, 15 mTorr, and $25^{\circ}C$. The selectivities of $CeO_2$ to PR and SBT are 0.21, 0.25. respectively. The surface reaction of the etched $CeO_2$ thin films was investigated with x-ray photoelectron spectroscopy (XPS). There is a chemical reaction between Ce and F, Compounds such as $Ce-F_x$ are remains on the surface of $CeO_2$ thin films. Those products can be removed by Ar ion bombardment effect, The results of secondary ion mass spectrometer (SIMS) were equal to these of XPS. Scanning electron microscopy (SEM) was used to examine etched profiles of $Ce-F_x$ thin films. The etch profile of over-etched $CeO_2$ films with the $0.5 {\mu}m$ line was approximately $65^{\circ}$.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
• /
• pp.13-17
• /
• 2004

The PZT thin films are well-known material that has been widely studied for ferroelectric random access memory (FRAM). We etched the PZT thin films by $CF_4/(Cl_2+Ar)$ plasma and investigated improvement in etching damage by $O_2$ annealing. PZT thin films were etched for 1 min in an ICP using a gas mixture of $Cl_2$(80%)/Ar (20%) with 30% $CF_4$ addition. The etching conditions were fixed at a substrate temperature of $30^{\circ}C$, an rf power of 700 W, a dc-bias voltage of -200 V and a chamber pressure of 2 Pa. To improve the ferroelectric properties of PZT thin films after etching, the samples were annealed for 10 min at various temperatures in $O_2$ atmosphere. After $O_2$ annealing, the remanent polarization, fatigue, and the leakage current were gradually recovered to the characteristics of the as-deposited film, according as the temperature increased.

• 한국표면공학회지
• /
• 제54권6호
• /
• pp.357-364
• /
• 2021

In this study, DLC films deposited by PECVD were evaluated to the properties of super-hydrophobic by CF₄ treatment. The structure of DLC films were confirmed by Raman Spectra whether or not mixed sp³ (like diamond) peak and sp² (like graphite) peak. And the hydrogen contents in the DLC films (F-DLC) were measured by RBS analysis. In addition, DLC films were analyzed by scratch test for adhesion, nano-indentation for hardness and tribo-meter of Ball-on-disc type for friction coefficient. In the result of analysis, DLC films had traditional structure regardless of variation of hardness at constant conditions. Also adhesion of DLC film was increased as higher material hardness. Otherwise, friction coefficient was increased as lower material hardness. The DLC films were treated by CF₄ plasma treatment to enhance the properties of super-hydrophobic. And the DLC films were measured by ESEM(Enviromental Scanning Electron Microscope) for water condensation.