• Journal of the Korean Vacuum Society
• /
• v.6 no.4
• /
• pp.364-371
• /
• 1997

Silicon trench etching has been carried out using a magnetically enhanced reactive ion etching system in HBr plasma containing He-$O_2$, $CF_4$. The changes of etch rate and etch profile, the degree of residue formation, and the change of surface chemical state were investigated as a function of additive gas flow rate. A severe lateral etching was observed when pure HBr plasma was used to etch the silicon, resulted in a pot shaped trench. When He-$O_2$, $SiF_4$ additives were added to HBr plasma, the lateral etching was almost eliminated and a better trench etch profile was obtained. The surface etched in HBr/He-$O_2/SiF_4$ plasma showed relatively low contamination and residue elements compared to the surface etched in HBr/He-$O-2/CF_4$plasma. In addition, the etching characteristics including low residue formation and chemically clean etched surface were obtained by using HBr containing He-$O_2$ or $SiF_4$ additive gases instead of $CF_4$ gas, which were confirmed by X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and atomic force microscopy (AFM).

• Proceedings of the KIEE Conference
• /
• 2008.07a
• /
• pp.1354-1355
• /
• 2008

교류 펄스전압을 이용한 글라이딩 아크 플라즈마를 이용하여 PFCs(Perfluoro compounds) 가스의 일종인 $CF_4$ $SF_6$, $NF_3$를 가스분해하는 연구를 실시하였다. 반응기 양전극 사이에 인가되는 전압은 10kV로 고정하고 각각의 가스의 유량을 조절하여 분해한후 FT-IR을 통해 각각의 가스의 분해율과 분해후 가스내 성분을 스펙트럼을 이용하여 분석하였다. 유량이 낮아질수록 분해율은 좋아졌고 $SF_6$와 $NF_3$의 경우 99%이상의 높은 분해율에 도달하였을 뿐 아니라 대표적인 난분해 가스로 손꼽히는 $CF_4$의 경우 82%이상의 분해율을 확인하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2015.11a
• /
• pp.240-240
• /
• 2015

본 논문에서는 플라즈마 모델링과 식각 표면 분석을 통해 가스 비율 변화에 따른 $CF_4/C_4F_8/Ar$ 유도결합 플라즈마의 특성과 Si 및 $SiO_2$의 식각 메커니즘에 대해 연구하였다.

• Clean Technology
• /
• v.19 no.2
• /
• pp.113-120
• /
• 2013

The treatment of chemically stable perflourocompounds (PFCs) requires a large amount of energy. An energy efficient arc plasma system has been developed to overcome such disadvantage. $CF_4$, $SF_6$ and $NF_3$ were injected into the plasma torch directly, and net plasma power was estimated from the measurement of thermal efficiency of the system. Effects of net plasma power, waste gas flow rate and additive gases on the destruction and removal efficiency (DRE) of PFCs were examined. The calculation of thermodynamic equilibrium composition was also conducted to compare with experimental results. The average thermal efficiency was ranged from 60 to 66% with increasing waste gas flow rate, while DRE of PFCs was decreased with increasing gas flow rate. On the other hand, DRE of each PFCs was increased with the increasing input power. Maximum DREs of $CF_4$, $SF_6$ and $NF_3$ were 4%, 15% and 90%, respectively, without reaction gas at the fixed input power and waste gas flow rate of 3 kW and 70 L/min. A rapid increase of DRE was found using hydrogen or oxygen additional gases. Hydrogen was more effective than oxygen to decompose PFCs and to control by-products. The major by-product in the arc plasma process with hydrogen was hydrofluoric acid that is easy to be removed by a wet scrubber. DREs of $CF_4$, $SF_6$ and $NF_3$ were 25%, 39% and 99%, respectively, using hydrogen additional gas at the waste gas flow rate of 100 L/min and the input power of 3 kW.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2015.11a
• /
• pp.280-280
• /
• 2015

플라즈마 진단법 중 내부에 삽입하여 측정하는 단일 랭뮤어 탐침법은 플라즈마 특성을 정확하게 측정할 수 있다. 탐침에 (-)극을 걸어서 들어오는 전류를 통해서 이온포화 전류밀도를 측정할 수 있다. 본 연구에서는 유도결합플라즈마에 흐르는 가스와 압력에 따라서 변화를 확인하였다. $H_2$, Ar, $CF_4$ gas로 10 mTorr, 70 mTorr, $CF_4$ 주입위치의 조건으로 플라즈마 밀도를 구하였다.

• Journal of the Microelectronics and Packaging Society
• /
• v.9 no.2
• /
• pp.27-31
• /
• 2002

In this study, $CeO_2$ thin films were etched with an addition of $Cl_2$ gas to $Ar/CF_4$ gas mixing in an inductively coupled plasma (ICP) etcher by the etching parameter such as RF power of 700 W, chamber pressure of 15 mTorr and dc bias voltage of -200 volts. The etch rate of $CeO_2$ films was 250 $\AA$/min with an addition of 10% $Cl_2$ gas to $Ar/CF_4$ gas mixture and the selectivity to SBT film was 0.4 at that condition. The surface reactions of the etched $CeO_2$ thin films were investigated by X-ray photoelectron spectroscopy (XPS). It was analyzed that Ce peaks were mainly observed in Ce-O bonds formed $CeO_2$ or $Ce_2O_3$ compounds. Cl peaks were detected by the peaks of Cl $2p_{3/2}$ and Cl $2p_{1/2}$. Almost all of Cl atoms were combined with Ce atoms like $CeCl_x$ or $Ce_x/O_yCl_z$ compounds.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.267-267
• /
• 2014

디스플레이용 유도결합 플라즈마 시스템에서 CF4/O2 혼합가스를 이용하여 SiO2 식각공정에 대한 연구를 하기 위해 플라즈마 변수들에 대한 공간 분포를 살펴 보았다. 장비의 규격은 8세대 급, 안테나는 4turn을 기본으로 하며 동일한 크기의 안테나 9개를 배치하였다. 시뮬레이션 결과에 따른 플라즈마 주요변수들(전자밀도, 전자온도, 전위차)의 공간분포와 CF3+, CF2+, CF+, O2+, O-, F+, F- 이온들에 대한 공간분포를 확인 할 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.236-236
• /
• 2012

QMS(Quadruple Mass Spectrometer)를 사용하여 혼합 기체의 조성비를 측정하는 기술로 He, $NF_3$, $CF_4$, $SF_6$가 포함된 공정에서 사용되는 가스를 사용하여 실제 조성비를 정량적으로 구하는 방법을 연구하였다. 실험을 위해 압력을 $1{\times}10^{-8}Torr$로 배기하였고, 반복 실험을 통하여 최적의 값으로 QMS를 튜닝을 한 후 He, $NF_3$, $CF_4$, $SF_6$가스에 대한 감도를 구하였다. 측정된 감도 값을 바탕으로 총 10회의 반복 측정한 데이터를 이용하여 농도 값을 얻었다. 사용된 가스는 한국표준과학연구원 표준가스실에 제작한 가스이다. 실험 데이터를 이용한 농도와 실제 농도를 비교한 결과 5% 이내의 오차 범위에서 농도 측정이 가능했다.

• Journal of the Korean Vacuum Society
• /
• v.7 no.4
• /
• pp.374-380
• /
• 1998

Radical and ion densities in a $CF_4$plasma have been calculated as a function of input power density, gas pressure and feed gas flow rate using simple 0 dimensional global model. Fluorine atom is found to be the most abundant neutral particle. Highly fragmented species such as CF and $CF^+$ become dominant neutral and ionic radical at the high power condition. As the pressure increase, ion density increases but ionization rate decreases due to the decrease in electron temperature. The fractional dissociation of $CF_4$feed gas decreases with pressure after increasing at the low pressure range. Electron density and temperature are almost independent of flow rate within calculation conditions studied. The fractional dissociation of $CF_4$monotonically decreases with flow rate, which results in increase in $CF_3$and decrease in CF density. The calculation results show that the $SiO_2$etch selectivity improvement correlates to the increase in the relative density of fluorocarbon ion and neutral radicals which has high C/F ratio.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.57 no.4
• /
• pp.635-640
• /
• 2008

New gas mixtures are now finding applications such as interrupting media for high-voltage circuit breakers. These mixtures consist of a high content of carbon tetrafluoride($CF_4$) added to sulfur hexafluoride($SF_6$). Nowdays $SF_6$ has been established for the use in gas insulated substations due to its high insulation withstand level and good arc quenching capability. At this paper Breakdown characteristics were investigated for $SF_6/CF_4$ mixtures when AC voltage and standard lightning impulse voltage(LI) was applied in a needle-plane electrodes. And partial discharge(PD) experiments were carried out in the test chamber which was made in needle-plane electrode. And ${\Phi}$-Q-N distribution of partial discharge signals was analyzed. The total pressure of the $SF_6/CF_4$ mixtures was varied within the range of 0.1-0.5 Mpa in the test chamber. The breakdown voltage in needle-plane electrode displayed N shape characteristics for increasing the content of $SF_6$ at positive impulse voltage and the PD inception voltage was increased slightly when pressure of $SF_6/CF_4$ Mixtures was increased. Maximum PD inception voltage is showed in 80% SF6/20%$CF_4$.