• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.105-106
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• 2013

Surface plasmon resonance (SPR) is classified into the propagating surface plasmon (PSP) excited on flat metal surfaces and the local surface plasmon (LSP) excited by metalnanoparticles. It is known that fluorescence signals are enhanced by these two SPR-fields.On the other hand, fluorescence is quenched by the energy transfer to metal (FRET). Bothphenomena are controlled by the distance between dyes and metals, and the degree offluorescence enhancement is determined by the correlation. In this study, we determined thecondition to achieve the maximum fluorescence enhancement by adjusting the distance of ametal nanoparticle 2D sheet and a quantum dots 2D sheet by the use of $SiO_2$ spacer layers. The 2D sheets consisting of myristate-capped Ag nanoparticles (AgMy nanosheets) wereprepared at the air-water interface and transferred onto hydrophobized gold thin films basedon the Langmuir-Schaefer (LS) method [1]. The $SiO_2$ sputtered films with different thickness (0~100 nm) were deposited on the AgMy nanosheet as an insulator. TOPO-cappedCdSe/CdZnS/ZnS quantum dots (QDs, ${\lambda}Ex=638nm$) [2] were also transferred onto the $SiO_2$ films by the LS method. The layered structure is schematically shown in Fig. 1. The result of fluorescence measurement is shown in Fig. 2. Without the $SiO_2$ layer, the fluorescence intensity of the layered QD film was lower than that of the original QDs layer, i.e., the quenching by FRET was predominant. When the $SiO_2$ thickness was increased, the fluorescence intensity of the layered QD film was higher than that of the original QDs layer, i.e., the SPR enhancement was predominant. The fluorescence intensity was maximal at the $SiO_2$ thickness of 20 nm, particularly when the LSPR absorption wavelength (${\lambda}=480nm$) was utilized for the excitation. This plasmonic nanosheet can be integrated intogreen or bio-devices as the creation point ofenhanced LSPR field.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.658-658
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• 2013

Graphene is an attractive material for various device applications due to great electrical properties and chemical properties. However, lack of band gap is significant hurdle of graphene for future electrical device applications. In the past few years, several methods have been attempted to open and tune a band gap of graphene. For example, researchers try to fabricate graphene nanoribbon (GNR) using various templates or unzip the carbon nanotubes itself. However, these methods generate small driving currents or transconductances because of the large amount of scattering source at edge of GNRs. At 2009, Bai et al. introduced graphene nanomesh (GNM) structures which can open the band gap of large area graphene at room temperature with high current. However, this method is complex and only small area is possible. For practical applications, it needs more simple and large scale process. Herein, we introduce a photosensitive graphene device fabrication using CdSe QD coated nano-porous graphene (NPG). In our experiment, NPG was fabricated by thin film anodic aluminum oxide (AAO) film as an etching mask. First of all, we transfer the AAO on the graphene. And then, we etch the graphene using O2 reactive ion etching (RIE). Finally, we fabricate graphene device thorough photolithography process. We can control the length of NPG neckwidth from AAO pore widening time and RIE etching time. And we can increase size of NPG as large as 2 $cm^2$. Thin CdSe QD layer was deposited by spin coatingprocess. We carried out NPG structure by using field emission scanning electron microscopy (FE-SEM). And device measurements were done by Keithley 4200 SCS with 532 nm laser beam (5 mW) irradiation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.411-412
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• 2008

We have studied a property change of organic light-emitting diodes (OLED) due to an indium tin oxide (ITO) surface reformation. The characteristics of OLED were improved by oxygen plasma processing of an ITO in this work. ITO is widely used as a transparent electrode in light-emitting devices, and the OLED device performance is sensitive to the surface properties of the ITO. The OLED devices with the structure of ITO/TPD(50nm)/$Alq_3$(70nm)/LiF(0.5nm)/Al(100nm) were fabricated, and the surface properties of ITO were investigated by using various characterization techniques. The oxygen plasma process of an ITO was processed by using RF power of 125W and oxygen partial pressure of $2\times10^{-2}$ Torr. The oxygen plasma processing of an ITO processed for 0/1/2/3/4min. Current-voltage-luminance characteristics of the devices show that turn-on voltage is 4V for 2min device and the luminance reaches about 27,000cd/$m^2$ for 4min device. The current efficiency shows that 3min device becomes saturated to be about 8cd/ A. They show that emission was from the $Alq_3$ layer, because the peak wavelength is about 525nm. View angle-dependent emission spectra show that the emission intensity decreases as the angle increases.

• Journal of Korean Society of Industrial and Systems Engineering
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• v.22 no.53
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• pp.99-109
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• 1999

The International Organization for Standardization(ISO) is a worldwide federation of national standards bodies. Through ISO Technical Committees(TC), various International Standards are being carried out. Each member body interested in a subject for which a TC has been established has the right to be represented on that committee. ISO collaborates closely with the International Electro-technical Commission(IEC) on all matters of electro-technical standardization. ISO established the ISO 9000 Family standard in 1987, and International Standard ISO 9000-3 was worked by ISO/TC 176, Quality management and quality assurance, Subcommittee 2(SC 2), Quality systems, in accordance with the ISO/IEC Directives, Part 3: 1997 Rules for the structure and drafting of International Standards, Many organizations have applied the ISO 9000-3 for their quality system standard in the software sector. That means that ISO 9000-3: 1991 and ISO 9000-3: 1997 have been used successfully by the software industry as the internationally accepted interpretation of ISO 9001 for the development and maintenance of computer software. Additionally ISO 9000-3: 1997 involved how the software life cycle processes defined in ISO/IEC 12207: 1995, Information Technology - Software Life Cycle Processes related to the requirements of ISO 9001:1994. After having performed full reviews of the WD3, CD1, CD2 and DIS drafts of the future ISO 9001:2000, this document will partly replace the part of ISO 9000-3: 1997 for measurement analysis and improvement of quality management system in computer software industry, as an interpretation for organizations and certification bodies, which will be withdrawn when ISO 9001:1994 is replaced by ISO 9001:2000,.

• Journal of the Semiconductor & Display Technology
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• v.4 no.2 s.11
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• pp.15-19
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• 2005

The organic light-emitting devices(OLEDs) based on fluorescence have low efficiency due to the requirement of spin-symmetry conservation. By using the phosphorescent material, the internal quantum efficiency can reach 100$\%$, compared to 25$\%$ in case of the fluorescent material [1]. Thus recently phosphorescent OLEDs have been extensively studied and showed higher internal quantum efficiency than conventional OLEDs. In this study, we have applied a new Ir complex as a red dopant and fabricated a red phosphorescent OLED on a flexible PC(Polycarbonate) substrate. Also, we have investigated the electrical and optical properties of the devices with a structure of A1/LiF/Alq3/(RD05 doped)BAlq/NPB/2-TNAIA/ITO/PC substrate. Our device showed the lightening efficiency of > 30 cd/A at an initial brightness of 1000 cd/$m^{2}$. The CIE(Commission Internationale de L'Eclairage) coordinates for the device were (0.62,0.37) at a current density of 1 mA/$cm^{2}$. In addition, although the sheet resistance of ITO films on PC substrate is higher than that on glass substrate, the flexible OLED showed much better lightening efficiency without much increase in operating voltage.

• Journal of Information Display
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• v.4 no.2
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• pp.13-18
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• 2003

We synthesized bis (2-methyl-8-quinolinolato)(triphenylsiloxy) aluminum (III) (SAlq), a blue-emitting material having a high luminous efficiency, through a homogeneous-phase reaction. The photoluminescence (PL) and electroluminescence (EL) spectra of SAlq show two peaks at 454 nm and 477 nm. Efficient white light-emitting devices are fabricated by doping SAlq with a red fluorescent dye of 4-dicyanomethylene-2-methyl-6-{2-(2,3,6,7-tetrahydro-1H,5H-benzo[i,j]quinolizin-8yl) vinyl}-4H-pyran (DCM2). The incomplete energy transfer from blue-emitting SAlq to red-emitting DCM2 results in light-emission of both blue and orange colors. Devices with the structure of ITO/TPD (50 nm)/SAlq:DCM2 (30 nm, 0.5 %)/$Alq_3$ (20 nm)/LiF (0.5 nmj/Al show EL peaks at 456 nm and 482 nm originating from SAlq and at 570 nm from DCM2, resulting in the Commission Internationale d'Eclairage (CIE) chromaticity coordinates of (0.32, 0.37). The device exhibits an external quantum efficiency of about 2.3 % and a luminous efficiency of about 2.41m/W at 100 $cd/m^2$. A maximum luminance of about 23,800 $cd/m^2$ is obtained at the bias voltage of 15 V.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.15 no.1
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• pp.13-21
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• 2001

The discharge characteristics of 3 electrcdes AC surface discharge plasma display were analyzed. For an unstable state of the discharge which appeared at the maximum discharge voltage, it is found that a parbal erase of the wall charge by the second discharge is a cause. Based on the second discharge, new operation margin considering the interrelation between the address discharge and the display discharge was defined and the validity of it was verified by the experiments. It is necessary to decrease the acklress pulse width for high-speed addressing. However, the operation margin of the ackIress pulse decreases as the pulse width of it becomes narrower. If the address pulse width is wider than l[ps], the operation margin of the display discharge is not related to the address pulse width. From the experimental result, image or 8bit 253 gray level was displayed on PDP with the cell structure of the HDTV class by using the high-speed address ADS drive methcd with pulse width of $1[{\mu}s]$ and the brightness of $560[cd/m^2]$ was obtained. ained.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.10
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• pp.817-821
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• 2011

We have proposed an optical thin film and micro lens to improve the luminance of organic light emitting device. The first method, optical thin film was calculated refractive index of dielectric layer material that was modulated refractive index of organic material, ITO (indium tin oxide)and glass. The second method, microlens was applied with lenses on the organic device. Optical thin films were designed with Macleod Simulator and Micro Lenses were calculated by FDTD (finite-difference time-domain) solution. The structure of thin film was designed in organic material/ITO/dielectric layer/glass. The lenses size, height and distance were 5 ${\mu}m$, 1 ${\mu}m$, 1 ${\mu}m$, respectively. The material of micro lenses used silicon dioxide. Result, The highest luminance of OLED which applied with microlens was 11,185 $cd/m^2$, when approval voltage was 14.5 V, applied thin film was 5,857 $cd/m^2$. The device efficiency applying microlens increased 3 times than the device which does not apply microlens.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.93-93
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• 2010

Semiconductor nanocrystal quantum dots (NQDs) have recently attracted considerable interest for use in photovoltaics. Band gaps of NQDs can be tuned over a considerable range by varying the particle size thereby allowing enhance absorption of solar spectrum. NQDs, synthesized using colloidal routes, are solution processable and promise for a large-area fabrication. Recent advancements in multiple-exciton generation in NQD solutions have afforded possible efficiency improvements. Various architectures have attempted to utilize the NQDs in photovoltaics, such as NQD-sensitized solar cell, NQD-bulk-heterojuction solar cell and etc. Here we have fabricated CdSe NQDs with the band gap of 1.8 eV to 2.1 eV on thin-layers of p-type organic crystallites (1.61 eV) to realize a donor-acceptor type heterojuction solar cell. Simple structure as it was, we could control the interface of electrode-p-layer, and n-p-layer and monitor the following efficiency changes. Specifically, surface molecules adsorbed on the NQDs were critical to enhance the carrier transfer among the n-layer where we could verify by measuring the photo-response from the NQD layers only. Further modifying the annealing temperature after the deposition of NQDs on p-layers allowed higher conversion efficiencies in the device.

• Journal of Microbiology and Biotechnology
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• v.29 no.3
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• pp.357-366
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• 2019

We first confirmed the involvement of MalQ (4-${\alpha}$-glucanotransferase) in Escherichia coli glycogen breakdown by both in vitro and in vivo assays. In vivo tests of the knock-out mutant, ${\Delta}malQ$, showed that glycogen slowly decreased after the stationary phase compared to the wild-type strain, indicating the involvement of MalQ in glycogen degradation. In vitro assays incubated glycogen-mimic substrate, branched cyclodextrin (maltotetraosyl-${\beta}$-CD: G4-${\beta}$-CD) and glycogen phosphorylase (GlgP)-limit dextrin with a set of variable combinations of E. coli enzymes, including GlgX (debranching enzyme), MalP (maltodextrin phosphorylase), GlgP and MalQ. In the absence of GlgP, the reaction of MalP, GlgX and MalQ on substrates produced glucose-1-P (glc-1-P) 3-fold faster than without MalQ. The results revealed that MalQ led to disproportionate G4 released from GlgP-limit dextrin to another acceptor, G4, which is phosphorylated by MalP. In contrast, in the absence of MalP, the reaction of GlgX, GlgP and MalQ resulted in a 1.6-fold increased production of glc-1-P than without MalQ. The result indicated that the G4-branch chains of GlgP-limit dextrin are released by GlgX hydrolysis, and then MalQ transfers the resultant G4 either to another branch chain or another G4 that can immediately be phosphorylated into glc-1-P by GlgP. Thus, we propose a model of two possible MalQ-involved pathways in glycogen degradation. The operon structure of MalP-defecting enterobacteria strongly supports the involvement of MalQ and GlgP as alternative pathways in glycogen degradation.