• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.679-682
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• 1998

This paper presents the VLSI implementation of RS(reed-solomon) decoder using the Modified Euclidean Algorithm(hereafter MEA) for DVD(Digital Versatile Disc) and CD(Compact Disc). The decoder has a capability of correcting 8-error or 16-erasure for DVD and 2-error or 4-erasure for CD. The technique of polynomial evaluation is introduced to realize syndrome calculation and a polynomial expansion circuit is developed to calculate the Forney syndrome polynomial and the erasure locator polynomial. Due to the property of our system with buffer memory, the MEA architecture can have a recursive structure which the number of basic operating cells can be reduced to one. We also proposed five criteria to determine an uncorrectable codeword in using the MEA. The overall architecture is a simple and regular and has a 4-stage pipelined structure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.11
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• pp.974-979
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• 2009

We studied solution-processed single-layered phosphorescent organic light-emitting diodes (PHOLEDs), doped with ionic salt and treated with simultaneous electrical and thermal annealing. Because the simultaneous annealing causes the accumulation of salt ions at the electrode surfaces, the energy levels of the organic molecules are bent by the electric fields due to the adsorbed ions, i.e., the simultaneous annealing can induce the proper formation of an ionic p-i-n structure. As a result, an ionic p-i-n PHOLED with a peak luminescence of over ${\sim}35,000\;cd/m^2$ and efficiency of 27 cd/A was achieved through increased and balanced carrier-injections.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.4
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• pp.725-729
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• 2003

In this paper, a mercury-free flat discharge lamp with opposite electrode structure, a couple of phosphor layer and discharge vessel has been studied for LCD back-lighting. When the drive voltage conditions were set properly, a uniform discharge generates over entires emitting surface. The firing voltage was increased with increasing the discharge gas pressure. It was considered that this tendency was resulted from the decrease of mean free paths due to the increase of discharge gas pressure. The maximum luminance of 2700[cd/m2] was obtained in the green emitting FFL.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.30-33
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• 2008

Using a $Ir(ppy)_3$ doped in hole and electron transport host materials, simple three layers green PHOLEDs comprising double emissive layers have been fabricated. A low driving voltage value of 3.3 V to reach a luminance of $1000\;cd/m^2$ and maximum current- and power-efficiency values of 53.9 cd/A and 57.8 lm/W are demonstrated in this simple structure phosphorescent OLED.

• YAKHAK HOEJI
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• v.47 no.3
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• pp.180-183
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• 2003

Crystal structure of TRAF6 in complex with TRAF6-binding sites from CD40 was previously determined. The structure revealed a distinct TRAF6-binding groove of CD40, the key structural determinant of interaction. The structural information leads to a proposed TRAF6-binding motif. This allows the identification of TRAF6-binding sequences in the hIRAK protein, whose functional requirement in IL-1/Toll-like receptor superfamilies-mediated signal transduction is further demonstrated using site-directed mutagenesis. The mutational effects of hIRAK on the down-stream NF-kB signaling shows the importance of the TRAF6 interface for signaling by IL-1/Toll-like receptor superfamilies.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.2
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• pp.143-147
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• 2010

We have fabricated simple triple-layer blue-emitting phosphorescent organic light emitting diodes (OLEDs) using different thicknesses of N,N'-dicarbazolyl-3,5-benzene (mCP) host layers doped with bis[(4,6-di-fluorophenyl)-pyridinate-N,$C^{2'}$]picolmate (FIrpic) guest materials. The thicknesses of mCP:FIrpic layers were 5, 10, and 30 nm. Driving voltage, current and power efficiencies were investigated. The current efficiency was higher in the 10 nm thick mCP:FIrpic device, resulting from the better electron-hole balance. The device with 10 nm mCP:FIrpic layer exhibited the maximum current efficiency of 22.5 cd/A and power efficiency of 7.4 lm/W at a luminance of 1000 cd/$m^2$.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.29 no.11
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• pp.1-5
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• 2015

In this paper, we propose the optical system design for a medium sized LED marine lanterns which simplifies the multi-layer structure into a single structure. In order to satisfy the target fixed intensity(35,000cd) and vertical divergence($-2.5^{\circ}{\sim}-4.0^{\circ}$, $+2.5^{\circ}{\sim}+4.0^{\circ}$), we use the total internal reflection collimator lens. And a Monte Carlo simulation has been utilized to optimize a condition of a LED package, TIR lens and outside lens. The computer simulation results indicated that this LED marine lanterns can produce of a fixed intensity(35,382cd) and vertical divergence($-3.1^{\circ}{\sim}+2.5^{\circ}$). Using the this optical system, we achieve the target value of LED lanterns.

• Proceedings of the PSK Conference
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• 2002.10a
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• pp.311.1-311.1
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• 2002

Crystal structure of TRAF6 in complex with TRAF6-binding sites from CD40 was previously determined. The structure revealed a distinct TRAF6-binding groove of CD40. the key structural determinant of interaction. The structural information leads to a proposed TRAF6-binding motif. This allows the identification of TRAF6-binding sequences in the hlRAK protein, whose functional requirement in IL-1 mediated signal transduction is further demonstrated using site-directed mutagenesis. The mutational in IL-1 mediated signal transduction is further dimonstrated using site-directed mutagenesis. The mutational effects of hlRAK on the down-stream NF-${\kappa}$ signaling shows the importance of the TRAF6 interface for signaling by IL-1.

• Journal of Sensor Science and Technology
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• v.4 no.3
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• pp.60-70
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• 1995

Polycrystalline $Cd_{1-x}Zn_{x}S$ thin film were grown on slide glass(corning-2948) substrate using a chemical bath deposition (C.B.D) method. They were annealed at various temperature and X -ray diffraction patterns were measured by X-ray diffractometor in order to study $Cd_{1-x}Zn_{x}S$ polycrystal structure using extrapolation method of X-ray diffraction patterns for the CdS, ZnS sample annealed in $N_{2}$ gas at $550^{\circ}C$. It was found hexagonal structure which had the lattice constant $a_{0}\;=\;4.1364{\AA}$, $c_{0}\;=\;6.7129{\AA}$ in CdS and $a_{0}\;=\;3.8062{\AA}$, $c_{0}\;=\;6.2681{\AA}$ in ZnS, respectively. Hall effect on these sample was measured by Van der Pauw method and then studied on carrier density and mobility depending on temperature. We measured also spectral response, sensitivity maximum allowable power dissipation and response time on these sample.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.923-932
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• 2002

A stoichiometric mixture of evaporating materials for CdIn$\_$2/S$\_$4/ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CdIn$\_$2/S$\_$4/ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by hot wall epitaxy(HWE) system. The source and substrate temperatures were 630 $\^{C}$ and 420 $\^{C}$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of CdIn$\_$2/S$\_$4/ single crystal thin films measured from Hall effect by van der Pauw method are 9.01$\times$10$\^$16/ cm$\^$-3/ and 219 ㎠/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of energy band gap on CdIn$\_$2/S$\_$4/ single crystal thin films was found to be Eg(T) ＝ 2.7116 eV - (7.74 $\times$ 10$\^$-4/ eV) T$\^$2//(T＋434). After the as-grown CdIn$\_$2/S$\_$4/ single crystal thin films was annealed in Cd-, S-, and In-atmospheres, the origin of point defects of CdIn$\_$2/S$\_$4/ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of V$\_$cd/, V$\_$s/, Cd$\_$int/ and S$\_$int/ obtained by PL measurements were classified as donors or accepters type. And we concluded that the heat-treatment in the S-atmosphere converted CdIn$\_$2/S$\_$4/ single crystal thin films to an optical p-type. Also, we confirmed that In in CdIn$\_$2/S$\_$4/GaAs did not from the native defects because In in CdIn$\_$2/S$\_$4/ single crystal thin films existed in the form of stable bonds.