• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.106.1-106.1
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• 2011

The Cu(In,Ga)Se2 (CIGS) thin film solar cells have been achieved until almost 20% efficiency by NREL. These solar cells include chemically deposited CdS as buffer layer between CIGS absorber layer and ZnO window layer. Although CIGS solar cells with CdS buffer layer show excellent performance, the short wavelength response of CIGS solar cell is limited by narrow CdS band gap of about 2.42 eV. Taking into consideration the environmental aspect, the toxic Cd element should be replaced by a different material. Among Cd-free candidate materials, the CIGS thin film solar cells with ZnS buffer layer seem to be promising with 17.2%(module by showa shell K.K.), 18.6%(small area by NREL). However, ZnS/CIGS solar cells still show lower performance than CdS/CIGS solar cells. There are several reported reasons to reduce the efficiency of ZnS/CIGS solar cells. Nakada reported ZnS thin film had many defects such as stacking faults, pin-holes, so that crytallinity of ZnS thin film is poor, compared to CdS thin film. Additionally, it was known that the hetero-interface between ZnS and CIGS layer made unfavorable band alignment. The unfavorable band alignment hinders electron transport at the heteo-interface. In this study, we focused on growing defect-free ZnS thin film and for favorable band alignment of ZnS/CIGS, bandgap of ZnS and CIGS, valece band structure of ZnS/CIGS were modified. Finally, we verified the photovoltaic properties of ZnS/CIGS solar cells.

• 정보관리연구
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• 제21권2호
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• pp.9-23
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• 1990

CD-ROM기술(技術)의 개발(開發)은 불과 10년이 채 안되었지만 그동안 비약적 발전을 거듭하여 여러 응용분야(應用分野)에서 활용되고 있다. 서지데이터는 물론 수치(數値), 음성(音聲), 영(映) 화상(畵像) 데이터를 초록형(抄錄型) 또는 전문형(全文型)으로 수록하여 도서관은 물론 기업체(企業體), 정보기관(情報機關) 등에 제공(提供), 활용(活用)하여 도서관(圖書館) 직원(職員), 정보전문가(情報專門家), 일반이용자(一般利用者)들에게 정보검색(情報檢索) 훈련용(訓練用)으로 쓰일 수 있게 되었다. 한 개 디스크를 액세스하기 위해 한 대의 디스크드라이브와 한 대의 컴퓨터를 필요(必要)로 했던 것에서 탈피하여 현재는 한 대의 드라이브로 여러 장의 CD-ROM을 검색(檢索)할 수 있고, 동시에 여러 명의 이용자가 다양한 정보(情報)를 액세스할 우 있는 이상적인 시스템인 CD-ROM LAN이 가능하게 되었다. 따라서, 본고(本稿)에서는 CO-ROM의 기능(機能)과 종류(種類), 특성(特性), 시스템구성(構成)과 데이터블록, 제작과정(製作過程)과 표준화(標準化) 그리고 CD-ROM LAN에 대해 살펴보았다.

• 한국전기전자재료학회논문지
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• 제25권6호
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• pp.456-461
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• 2012

We studied the emission characteristics of white phosphorescent organic light-emitting diodes (PHOLEDs), which were fabricated using a two-wavelength method. To optimize emission characteristics of white PHOLEDs, white PHOLEDs with red/blue, blue/red and red/blue/red emitting layer (EML) structures were fabricated using a host-dopant system. In case of white PHOLEDs with red/blue structure, the best efficiency was obtained at a structure of red (15 nm)/blue (15 nm). But the emission color was blue-shifted white. In case of white PHOLEDs with blue/red structure, the better color purity and efficiency were observed at a blue (29 nm)/red (1 nm) structure. For additional improvement of color purity in white PHOLEDs with blue (29 nm)/red (1 nm) EMLs, we fabricated white PHOLEDs with red (1 nm)/blue (28 nm)/red (1 nm) structure. The current efficiency, external quantum efficiency, and CIE (x, y) coordinate were 27.2 cd/A, 15.1%, and (0.382, 0.369) at 1,000 $cd/m^2$, respectively.

• Bulletin of the Korean Chemical Society
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• 제21권3호
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• pp.339-341
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• 2000

• 대한화학회지
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• 제38권6호
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• pp.435-441
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• 1994

3차원 금속 착제, Cd(pn)Ni(CN)4를 host로 하는 포접 화합물을 합성하고, X-선 회절 데이타를 이용한 단결정의 구조해석을 하였다. 결정학적 데이타는 다음과 같다. $[Cd(pn)Ni(CN)_4]{\cdot}0.5(CH_3COCH_3{\cdot}H_2O)$, Fw = 387.35, Orthorhombic, $Pn2_1a$, a = 13.950(3) $\AA$, b = 26.713(7) $\AA$, c = 7.628(1) $\AA$, V = 2843(1) $\AA^3$, Z = 4, $D_x=1.81 gcm^{-3}$, $\mu(MoK{\alpha})$ = $28.153cm^{-1}$, T = 297K, 3521개($F_0>3{\sigma}(F_0)$)의 회절 강도에 대한 최종 신뢰도 인자 R = 0.0418이 얻어졌다. 이 포접 화합물은 thiourea 포접 화합물과 유사한 턴넬형의 포접 공간(T-type)을 형성하며, 이런 포접공간 내에 분자당 0.5개의 아세톤과 물분자를 guest로서 받아 들인다. 표제의 포접 화합물은 이미 보고된 바와 같이, 가지달린 유기 guest분자가 host의 기하구조를 T-type으로 이끈다고 하는 host 선택성에 대한 또 하나의 증거가 된다.

• 한국전기전자재료학회논문지
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• 제20권10호
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• pp.829-838
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• 2007

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD).The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}\;cm^{-3},\;345\;cm^2/V{\cdot}s$ at 293 K. respectively. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $Eg(T)\;=\;2.6400\;eV\;-\;(7.721{\times}10^{-4}\;eV/K)T^2/(T+399\;K)$. After the as-grown single crystal $CdGa_2Se_4$ thin films were annealed in Cd-, Se-, and Ga -atmospheres, the origin of point defects of single crystal $CdGa_2Se_4$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd}$, $V_{Se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or accepters. We concluded that the heat-treatment in the Cd-atmosphere converted single crystal $CdGa_2Se_4$ thin films to an optical p-type. Also, we confirmed that Ga in $CdGa_2Se_4/GaAs$ did not form the native defects because Ga in single crystal $CdGa_2Se_4$ thin films existed in the form of stable bonds.

• 멤브레인
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• 제31권6호
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• pp.434-442
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• 2021

Poly(vinylidene fluoride) (PVDF) 막은 내구성 및 열적·화학적 안정성 등의 물성은 우수하나 소수성이 커서 수투과도가 낮고 단백질 및 유기물에 의한 막오염이 쉽게 발생한다. 본 연구에서는 PVDF 막의 내오염성을 개선시키고자 바이오 기능성 물질인 𝛽-cyclodextrin (𝛽-CD)을 PVDF 막 구조 내에 분산 함침시킨 PVDF/𝛽-CD 혼합기질 비대칭막을 상변환법을 통해 제조하고, 𝛽-CD 함침량에 따른 순수 투과 유속(PWF) 측정과 BSA 용액을 대상으로 한 막여과 실험을 수행하여 내오염성 특성을 평가하였다. 이 결과 PVDF 고분자 매질 내에 𝛽-CD를 함침시키면 막의 친수성을 증가시켜 접촉각을 감소시키고 이로 인해 내오염성을 향상시킬 수 있었다. 𝛽-CD 함침량이 2 wt%인 도프용액을 사용하여 제조된 PVDF/𝛽-CD 혼합기질 비대칭막의 PWF는 64 L/m²·h, BSA 배제도는 95%를 나타내었으며, 𝛽-CD를 첨가하지 않고 제조된 pristine PVDF 막에 비해 투과 유속 향상성이 최대 80%에 달해 𝛽-CD를 첨가시킴으로서 PVDF 막의 내오염성을 증가시킬 수 있었다.

• 대한수의학회지
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• 제44권1호
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• pp.73-82
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• 2004

Chitosan is similar in structure to cellulose and are the second most abundant polysaccharides in nature, comprising the horny substance in the exoskeletons of crabs, shrimp and insects as well as fungi. This study was conducted to access the effect of immunomodulation responses of chitosan(N-acetyl-${\beta}$-D-glucosamine) chicken infected with in Fowl typhoid(Salmonella gallinarum). One-day-old broiler chicks were divided into eight groups: The 1st group was inoculated intra-peritoneally with chitosan and challenged intra-peritoneally with S. gallinarum. The 2nd group was inoculated intra-peritoneally with chitosan. The 3rd group was feeding with chitosan and intra-peritoneally inoculated with cyclophosphamide and challenged intra-peritoneally S. gallinarum. The 4th group was feeding with chitosan and intra-peritoneally with cyclophosphamide. The 5th group was feeding with chitosan and challenged intra-peritoneally with S. gallinarum. The 6th group was feeding with chitosan. The 7th group was challenged intra-peritoneally with S. gallinarum. The 8th group was nontreated-uninfected control group. The results shows that $CD4^+$, $CD8^+$ and B lymphocyte in lymphoid organs of chickens treated with chitosan increased in especially $CD4^+$, $CD8^+$ lymphocytes (p<0.05). The group of feeding chitosan showed the significantly increased $CD4^+$, $CD8^+$ and B lymphocyte than inoculated intra-peritoneally with chitosan. As the result suggests that the feeding of chitosan induced immunostimulatant effect than the inoculation intra-peritoeally of chitosan.

• 한국결정학회지
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• 제9권1호
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• pp.53-63
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• 1998

HWE 방법에 의해 Cd1-xZnxS 박막을 (100)방향을 Si 기판 위에 성장시켰다. 증발원과 기판의 온도를 각각 600℃, 440℃로 하여 성장시킨 Cd1-xZnxS 박막의 이중 결정 X-선 요동곡선(DCRC)의 반폭치(FWHM)값이 265 arcsec로 가장 작았다. Van der Pauw 방법으로 Hall효과를 측정하여 운반자 농도와 Hall 이동도의 온도 의존성을 조사하였다. 광전도 셀의 특성으로 spectral response, 최대 허용소비전력(MAPD), 광전류와 암전류(pc/dc)의 비 및 응답시간을 측정하였다. Cd0.53Zn0.47S광전도 셀을 Cu증기 분위기에서 열처리한 경우 감도(γ)는 0.99, pc/dc은 1.65 ×10 7 그리고 최대 허용소비전력(MAPD)은 338mW, 오름시간 (rise time)은 9.7ms, 내림시간(decay time)은 9.3ms로 가장 좋은 광전도 특성을 얻었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 제4회 영호남학술대회 논문집
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• pp.97-100
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• 2002

$CdGaInS_{4}:Er^{3+}$ single crystal crystallized in the rhombohedral. with lattice constants a = 3.899 $\AA$ and c = 36.970 $\AA$ for $CdGaInS_{4}:Er^{3+}$. The optical absorption measured near the fundamental band edge showed that the optical energy band structure of this compound had a direct and indirect band gaps. the direct and indirect energy gaps are found to be 2.665 and 2.479eV for $CdGaInS_{4}:Er^{3+}$ at 10 K. The photoluminescence spectra of $CdGaInS_{4}:Er^{3+}$ measured in the wavelength ranges of 500 nm~900 nm and 1500~1600 nm at 10 K. Eight sharp emission peaks due to $Er^{3+}$ ion are observed in the regions of 549.5~560.0nm. 661.3~676.5nm. 811.1~ 834.1 nm and 1528.2~1556.0 nm in $CdGaInS_{4}:Er^{3+}$ single crystal. These PL peaks were attributed to the radiative transitions between the split electron energy levels of the $Er^{3+}$ ions occupied at $C_{2v}$ symmetry of the $CdGaInS_4$ single crystals host lattice.