• Title/Summary/Keyword: CD spectra

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Polymer Phosphorescence Device using a New Green Emitting Ir(III) Complex

  • Lee, Chang-Lyoul;Das, Rupasree Ragini;Noh, Yong-Young;Kim, Jang-Joo
    • Journal of Information Display
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    • v.3 no.1
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    • pp.6-10
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    • 2002
  • We have synthesized a new green Ir(III) complex fac-tris-(3-methyl-2-phenyl pyridine)iridium(III) $Ir(mpp)_3$ and fabricated phosphorescent polymer light-emitting device using it as a triplet emissive dopant in PVK. $Ir(mpp)_3$ showed absorption centered at 388 nm corresponding to the $^1MLCT$ transition as .evidenced by its extinction coefficient of the order of $10^3{\cdot}$ From the PL and EL spectra of the $Ir(mpp)_3$ doped PVK film, the emission maximum was observed at 523 nm, due to the radiative decay from the $^3MLCT$ state to the ground state, confirming a complete energy transfer from PVK to $Ir(mpp)_3$. The methyl substitution has probably caused a red shift in the absorption and emission spectrum compared to $Ir(mpp)_3$. The device consisting of a 2 % doped PVK furnished 4.5 % external quantum efficiency at 72 $cd/m^2$ (current density of 0.45 $mA/cm^2$ and drive voltage of 13.9 V) and a peak luminance of 25,000 $cd/m^2$ at 23.4 V (494 $mA/cm^2$). This work demonstrates the impact of the presence of a methyl substituent at the 3-position of the pyridyl ring of 2-phenylpyridine on the photophysical and electroluminescence properties.

Synthesis and base pairing properties of DNA-RNA heteroduplex containing 5-hydroxyuridine

  • Cui, Song;Kim, Yong-Hoon;Jin, Cheng-Hao;Kim, Sang-Kook;Rhee, Man-hee;Kwon, Oh-Shin;Moon, Byung-Jo
    • BMB Reports
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    • v.42 no.6
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    • pp.373-379
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    • 2009
  • 5-Hydroxyuridine (5-OHU) is a major lesion of uridine and cytosine produced in RNA by various chemical oxidants. To elucidate its biochemical and biophysical effects on RNA replication, the site-specifically modified oligoribonucleotides containing 5-OHU were synthesized with C5-hydroxy-5'-ODMTr-2'-TBDMS-uridine phosphoramidite using automated solid phase synthesis. The base-pairing properties of nucleotides opposite 5-OHU in 24 mer oligoribonulcleotides with dNTP were studied using three reverse transcriptases (Super-$Script^{TM}II$-, AMV-, MMLV-RT) in cDNA synthesis. Adenine as well as guanine was incorporated preferentially by all reverse transcriptases. In the UV-melting temperature experiment, the results from the relative stabilities of the base pairs were A : 5-OHU > G : 5-OHU > T : 5-OHU $\approx$ C : 5-OHU. Circular Dichroism (CD) studies showed that DNA-RNA containing 5- OHU heteroduplexes exhibit a similar conformation between the A-type RNA and B-type DNA. These results suggest that 5- OHU from oxidative damage was mainly influenced by adenine mismatch.

Luminescent Characteristics of $MgZnSiN_2$ Phosphors Doped with Tb or Eu ($MgZnSiN_2$ 모체에 Tb 또는 Eu이 첨가된 형광체의 발광 특성)

  • Lee, Soon-Seok;Lim, Sung-Kyoo
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.12
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    • pp.31-36
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    • 1999
  • The $Mg._5Zn._5SiN_2:Tb$ and $Mg._5Zn._5SiN_2:Eu$ materials were synthesized and studied to develop new phosphors for thin-film electroluminescent device application. Photoluminescence and cathodoluminescence characteristics of the synthesized phosphors were similar to general emission spectra of Eu, Tb ion, respectively. The CIE color coordinates, threshold voltage and luminance of the $Mg._8Zn._2SiN_2:Eu$ thin-film electroluminescent device fabricated by electron-beam deposition system were x=0.47, y=0.46, 47V, and 23.5 cd/$cm^2$ at 80V, respectively. The capacitance-voltage and charge-voltage characteristics of the thin film electroluminescent devices were also measured.

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Photoluminescience Properties and Growth of $CuAlSe_2$ Single Crystal Thin Film by Hot Wall Epitaxy (Hot Wall Epitaxy(HWE)법에 의한 $CuAlSe_2$ 단결정 박막 성장과 광발광 특성)

  • Lee, S.Y.;Hong, K.J.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.386-391
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    • 2003
  • Sing1e crystal $CuAlSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $410^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$source at $680^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuAlSe_2$ thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}\;s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.86\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;155K)$. After the as-grown single crystal $CuAlSe_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal $CuAlSe_2$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd}$, $V_{Se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or accepters. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal $CuAlSe_2$ thin films to an optical n-type. Also, we confirmed that Al in $CuAlSe_2/GaAs$ did not form the native defects because Al in single crystal $CuAlSe_2$ thin films existed in the form of stable bonds.

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The Effect of Thermal Annealing and Growth of CuAlSe2 Single Crystal Thin Film by Hot Wall Epitaxy (Hot Wall Epitaxy(HWE)법에 의한 CuAlSe2 단결정 박막 성장과 열처리 효과)

  • 윤석진;정태수;이우선;박진성;신동찬;홍광준;이봉주
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.10
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    • pp.871-880
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    • 2003
  • Single crystal CuAlSe$_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 410 C with hot wall epitaxy (HWE) system by evaporating CuAlSe$_2$ source at 680 C. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X -ray diffraction (DCXD). The carrier density and mobility of single crystal CuAlSe$_2$ thin films measured with Hall effect by van der Pauw method are 9.24${\times}$10$\^$16/ cm$\^$-3/ and 295 cm$^2$/V $.$ s at 293 K, respectively. The temperature dependence of the energy band gap of the CuAlSe$_2$ obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 2.8382 eV - (8.86 ${\times}$ 10$\^$-4/ eV/K)T$^2$/(T + 155K). After the as-grown single crystal CuAlSe$_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal CuAlSe$_2$ thin films has been investigated by PL at 10 K. The native defects of V$\_$cd/, V$\_$se/, Cd$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as donors or acceptors. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal CuAlSe$_2$ thin films to an optical n-type. Also, we confirmed that Al in CuAlSe$_2$/GaAs did not form the native defects because Al in single crystal CuAlSe$_2$ thin films existed in the form of stable bonds.

Optical properties and Growth of CuAlSe$_2$ Single Crystal Thin Film by Hot Wal1 Epitaxy (Hot Wall Epitaxy(HWE)법에 의한 $CuAlSe_2$ 단결정 박막 성장과 점결함 특성)

  • Hong, Kwang-Joon;Yoo, Sang-Ha
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.76-77
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    • 2005
  • Single crystal $CuAlSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 410$^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$ source at $680^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X-ray diffraction (DCXO). The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorpt ion spectra was wel1 described by the Varshni's relation, $E_g$(T) = 2.8382 eV - ($8.86\times10^{-4}$ eV/H)$T_2$/(T + 155K). After the as-grown single crystal $CuAlSe_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal $CuAlSe_2$ thin films has been investigated by PL at 10 K. The native defects of $V_{cd}$, $V_{se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or acceptors. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal $CuAlSe_2$ thin films to an optical n-type. Also. we confirmed that hi in $CuAlSe_2$/GaAs did not form the native defects because Al in single crystal $CuAlSe_2$ thin films existed in the form of stable bonds.

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Synthesis and Characterization of Organic Light-Emitting Copolymers Containing Naphthalene

  • Kim, Jung-Sik;Heo, Jun;Kang, Peng-Tao;Kim, Jin-Hak;Jung, Sung-Ouk;Kwon, Soon-Ki;Kim, Un-Kyung;Kim, Yun-Hi
    • Macromolecular Research
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    • v.17 no.2
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    • pp.91-98
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    • 2009
  • Conjugated PPV-derived block copolymers containing 2-ethylhexyloxynaphthalene unit were synthesized and characterized in this study. The resulting polymers were soluble in common organic solvents and showed good thermal stabilities, The weight-average molecular weights ($M_w$) of the copolymers ranged from 246,000 to 475,000 with PDIs of $1.3{\sim}2.1$. The optical properties of these polymers, measured both in a chloroform solution and on a film, showed a maximum absorption at $405{\sim}476\;nm$ for Copolymers $I{\sim}VIII$. In the PL spectra, Copolymers $I{\sim}VIII$ showed maximum peaks at $510{\sim}566\;nm$. The HOMOs, LUMOs and band gaps of the PPV derivatives of Copolymers $I{\sim}VIII$ were $5.30{\sim}5.77$, $3.04{\sim}3.24$, and $2.5{\sim}2.2\;eV$, respectively, The multi-layered, light-emitting diodes of ITO/PEDOT/copolymers/LiF/Al exhibited turn-on voltages of $6{\sim}2.5\;V$ Copolymer VIII exhibited the maximum brightness of $3.657\;cd/m^2$. Particularly, Copolymer VII, with an identical composition of MEH-PPV and naphthalene-PPV, showed a maximum luminance efficiency and power efficiency of 2,63 cd/A and 1.06 lm/W, respectively.

Synthesis of New Nitrogen-Oxygen(N3O2) Pentadentate Ligands and the Substituent Effect on the Stability Constants of the Heavy(II) Metal Complexes (새로운 질소-산소(N3O2)계 다섯 자리 리간드의 합성과 중금속(II) 이온들의 착물 안정도상수에 대한 치환기효과)

  • Kim, Sun-Deuk;Lee, Hye-Won;Seol, Jong-Min
    • Journal of Environmental Science International
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    • v.19 no.7
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    • pp.849-860
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    • 2010
  • A new $N_3O_2$ pentadentate ligand, N,N'-Bis(2-hydroxybenzyl)-ethylenetriamine(H-BHET 3HCl) was synthesized. The hydrochloric acid salts of Br-BHET 3HCl, Cl-BHET 3HCl, $CH_3O$-BHET 3HCl and $CH_3$-BHET 3HCl containing Br-, Cl-, H-, $CH_3O-$ and $CH_3-$ groups at the para-site of the phenol group of the H-BHEP were synthesized. The structures of the ligands were confirmed by C. H. N. atomic analysis and $^1H$ NMR, $^{13}C$ NMR, UV-visible and mass spectra. The calculated stepwise protonation constants(${\logK_n}^H$) of the synthesized $N_3O_2$ ligands showed six steps of the proton dissociation. The orders of the overall protonation constants($\log{\beta}_p$) of the ligands were Br-BHET < Cl-BHET < H-BHET < $CH_3O$-BHET < $CH_3$-BHET. The orders agreed well with that of para Hammett substituent constants(${\delta}_p$). The calculated stability constants($\logK_{ML}$) between the ligands and heavy metal ions (Co(II), Ni(II), Cu(II), Zn(II), Cd(II) and Pb(II)) agreed well with the order of the overall proton dissociation constants of the ligands but they showed a reverse order in para Hammestt substituent constants(${\delta}_p$). The order of the stability constants between the heavy metal ions with the synthesized ligands were Co(II) < Ni(II) < Cu(II) > Zn(II) > Cd(II) > Pb(II).

Property change of organic light-emitting diodes due to an ITO surface reformation (ITO 표면 개질에 의한 유기 발광 소자의 특성 변화)

  • Na, Su-Hwan;Joo, Hyun-Woo;An, Hui-Chul;Lee, Suk-Jae;Oh, Hyun-Suk;Min, Hang-Gi;Kim, Tae-Wan;Lee, Ho-Sik;Lee, Won-Jae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.411-412
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    • 2008
  • We have studied a property change of organic light-emitting diodes (OLED) due to an indium tin oxide (ITO) surface reformation. The characteristics of OLED were improved by oxygen plasma processing of an ITO in this work. ITO is widely used as a transparent electrode in light-emitting devices, and the OLED device performance is sensitive to the surface properties of the ITO. The OLED devices with the structure of ITO/TPD(50nm)/$Alq_3$(70nm)/LiF(0.5nm)/Al(100nm) were fabricated, and the surface properties of ITO were investigated by using various characterization techniques. The oxygen plasma process of an ITO was processed by using RF power of 125W and oxygen partial pressure of $2\times10^{-2}$ Torr. The oxygen plasma processing of an ITO processed for 0/1/2/3/4min. Current-voltage-luminance characteristics of the devices show that turn-on voltage is 4V for 2min device and the luminance reaches about 27,000cd/$m^2$ for 4min device. The current efficiency shows that 3min device becomes saturated to be about 8cd/ A. They show that emission was from the $Alq_3$ layer, because the peak wavelength is about 525nm. View angle-dependent emission spectra show that the emission intensity decreases as the angle increases.

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Comparative and Structural Analysis of the Interaction between β-Lactoglobulin type A and B with a New Anticancer Component (2,2'-Bipyridin n-Hexyl Dithiocarbamato Pd(II) Nitrate)

  • Divsalar, A.;Saboury, A.A.;Mansoori-Torshizi, H.;Hemmatinejad, B.
    • Bulletin of the Korean Chemical Society
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    • v.27 no.11
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    • pp.1801-1808
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    • 2006
  • The interaction between whey carrier protein $\beta$-lactoglobulin type A and B (BLG-A and -B) and 2,2'-bipyridin n-hexyl dithiocarbamato Pd(II) nitrate (BPHDC-Pd(II)), a new heavy metal complex designed for anticancer property, was investigated by fluorescence spectroscopy combined with chemometry and circular dichroism (CD) techniques. A strong fluorescence quenching reaction of BPHDC-Pd(II) to BLG-A and -B was observed. Hence, BPHDC-Pd(II) complex can be bound to both BLG-A and -B, and quench the fluorescence spectra of the proteins. The quenching constant was determined using the modified Stern-Volmer equation. The binding parameters were evaluated by fluorescence quenching method. The results of binding study provided evidences presence of two and three sets of binding sites on the BLG-B and -A, respectively, for BPHDC-Pd(II) complex. Using fluorescence spectroscopy and chemometry, the ability of BLG-A and -B to form an intermediate upon interaction with BPHDC-Pd(II) complex was assessed. CD studies displayed that under influence of different concentrations of BPHDC-Pd(II) complex, the regular secondary structure of BLG-B had no significant changes, whereas for BLG-A a transition from $\alpha$-helix to $\beta$-structure was appeared. The results for both of BLG-A and -B displayed that BPHDC-Pd(II) complex can induce a conformational transition from the native form to an intermediate state with a slightly opened conformation, which is detectable with chemometry analyses.