• 제목/요약/키워드: CAD surface

검색결과 539건 처리시간 0.03초

불균일한 매개변수로 정의된 NURBS 곡면에서의 요소망 자동 생성 (Automatic Mesh Generation on Poorly Parameterized NURBS Surfaces)

  • 채수원;박정민
    • 한국정밀공학회지
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    • 제20권6호
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    • pp.189-196
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    • 2003
  • The NURBS surfaces are widely employed for exchanging geometric models between different CAD/CAE systems. However if the input NURBS surfaces are poorly parameterized, most surface meshing algorithms may fail or the constructed meshes can be ill-conditioned. In this paper presents a new method is presented that can generate well conditioned meshes even on poorly parameterized NURBS surfaces by regenerating NURBS surfaces. To begin with, adequate points are sampled on original poorly parameterized surfaces and new surfaces are created by interpolating these points. And then, mesh generation is performed on new surfaces. With this method, models with poorly parameterized NURBS surfaces can be meshed successfully.

NURBS 곡면 재생성을 통한 유한 요소망의 자동 생성 (Automatic Generation of Finite Element Meshes by Regenerating NURBS Surfaces)

  • 박정민;채수원
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2002년도 추계학술대회 논문집
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    • pp.784-787
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    • 2002
  • The NURBS surfaces are widely employed for exchanging geometric models between different CAD/CAE systems. However if the input NURBS surfaces are poorly parameterized, most surface meshing algorithms may fail or the constructed meshes can be ill-conditioned. In this paper presents a new method is presented that can generate well conditioned meshes even on poorly parameterized NURBS surfaces by regenerating NURBS surfaces. To begin with, adequate Points are sample on original poorly parameterized surfaces and new surfaces are created by interpolating these points. And then. mesh generation is performed on new surfaces. With this method, models with poorly parameterized NURBS surfaces can be meshed successfully.

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볼 엔드밀 헬릭스 각에 따른 절삭 특성 (Cutting Characteristics of Ball-end Mill with Different Helix Angle)

  • 조철용;류시형
    • 한국정밀공학회지
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    • 제31권5호
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    • pp.395-401
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    • 2014
  • Development of five axis tool grinding machine and CAD/CAM systems increase tool design flexibility. In this research, investigated are cutting characteristics of ball-end mill with different helix angle. Special WC ball-end mills with $0^{\circ}$, $10^{\circ}$, $20^{\circ}$, $30^{\circ}$ helix angles are designed and used in various cutting tests. Machining performance according to helix angle variation is evaluated from cutting forces, surface roughness, tool wear, produced chip shape, and vibration characteristics. The ball-end mill with $10^{\circ}$ helix angle shows the best cutting performance due to appropriate chip load distribution and smooth chip flow. This research can be used for cutting edge geometry optimization and novel design of ball-end mill.

Submesh Splines over Hierarchical T-meshes

  • Jin, Liangbing;Deng, Jiansong;Chen, Falai
    • International Journal of CAD/CAM
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    • 제9권1호
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    • pp.47-53
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    • 2010
  • In this paper we propose a new type of splines-biquadratic submesh splines over hierarchical T-meshes. The biquadratic submesh splines are in rational form consisting of some biquadratic B-splines defined over tensor-product submeshes of a hierarchical T-mesh, where every submesh is around a cell in the crossing-vertex relationship graph of the T-mesh. We provide an effective algorithm to locate the valid tensor-product submeshes. A local refinement algorithm is presented and the application of submesh splines in surface fitting is provided.

TCAD Simulation of Silicon Pillar Array Solar Cells

  • Lee, Hoong Joo
    • 반도체디스플레이기술학회지
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    • 제16권1호
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    • pp.65-69
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    • 2017
  • This paper presents a Technology-CAD (TCAD) simulation of the characteristics of crystalline Si pillar array solar cells. The junction depth and the surface concentration of the solar cells were optimized to obtain the targeted sheet resistance of the emitter region. The diffusion model was determined by calibrating the emitter doping profile of the microscale silicon pillars. The dimension parameters determining the pillar shape, such as width, height, and spacing were varied within a simulation window from ${\sim}2{\mu}m$ to $5{\mu}m$. The simulation showed that increasing pillar width (or diameter) and spacing resulted in the decrease of current density due to surface area loss, light trapping loss, and high reflectance. Although increasing pillar height might improve the chances of light trapping, the recombination loss due to the increase in the carrier's transfer length canceled out the positive effect to the photo-generation component of the current. The silicon pillars were experimentally formed by photoresist patterning and electroless etching. The laboratory results of a fabricated Si pillar solar cell showed the efficiency and the fill factor to be close to the simulation results.

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Feature curve extraction from point clouds via developable strip intersection

  • Lee, Kai Wah;Bo, Pengbo
    • Journal of Computational Design and Engineering
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    • 제3권2호
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    • pp.102-111
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    • 2016
  • In this paper, we study the problem of computing smooth feature curves from CAD type point clouds models. The proposed method reconstructs feature curves from the intersections of developable strip pairs which approximate the regions along both sides of the features. The generation of developable surfaces is based on a linear approximation of the given point cloud through a variational shape approximation approach. A line segment sequencing algorithm is proposed for collecting feature line segments into different feature sequences as well as sequential groups of data points. A developable surface approximation procedure is employed to refine incident approximation planes of data points into developable strips. Some experimental results are included to demonstrate the performance of the proposed method.

FDM장치에서 추사간격과 시작품의 경사가 표면거칠기에 미치는 영향 (The influence of surface roughness on injection interval and part angle at FDM)

  • 하만경;전재억;정진서
    • 한국공작기계학회논문집
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    • 제10권5호
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    • pp.104-109
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    • 2001
  • Nowadays, Industrial competition power is depended on that rapidly produce the customized products. Therefor, it is necessary to reduce period of product development. Thus, concurrent engineering that work many process at a time was appeared and Rapid prototyping was appeared, it is method that rapidly produce the prototype. If the graphic model was made by CAD, the prototype can be made in short term. That provide what the part was directly tested by the worker. It provide a worker with believable data. We study on the influence of surface roughness on injection interval and part angle at FDM.

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극소형 전자기계장치에 관한 연구전망

  • 양상식
    • 전기의세계
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    • 제39권6호
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    • pp.14-19
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    • 1990
  • 1. CAD system과 PROPS를 접속하여 CADsystem에서 Design된 surface를 사용할 수 있으며 Robot Kinematics를 graphic library화하여 surface배치 수상 및 path generation 및 animation을 통하여 가공작업을 위한 로보트 운동을 simulation할 수 있게 되었다. 2. Denavit-hartenberg transformation form에 의해 여러 Robot Kinematic을 일반적인 형식으로 library화 하였다. 3. 금형 가공의 공정들을 Menu로 만들어서 Expert system을 도입, 손쉽게 Interactive한 작업을 할 수 있게 하였다. 4. 차후의 연구 목표는 로보트 Calibration S/W의 개발 및 실현 그리고 Expert System을 이용한 Robot Program Generator의 완성을 통한 전체 Off-line programming System을 정립하는데 있다. 이를 위해서 더 실제적인 Tool Path Generation과 Expert System을 이용한 가공 조건의 결정 및 User Interface를 위한 Window가 개발되어야 한다. 5. 1차년도에 개발된 Robotonomic Tool System의 유연성을 확장시킨다. 실험결과를 바탕으로 공정 자동화 시스템을 확장시킨다. 6. 연마공정자동화에 필수적인 공구 및 공구 Tip의 표준화 및 자동교환장치를 개발한다. 7. 금형연마 Cell의 구성요소들간의 Interface 및 System Controller에서의 집적화를 시킨다.

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급속금형제작 (1): 분말주조에 의한 정형(正形)에의 도전 (Rapid Tooling : Challenge to Net Shape by Powder Casting)

  • 임용관;김범수;정해도;배원병
    • 한국정밀공학회지
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    • 제15권7호
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    • pp.85-90
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    • 1998
  • The business of manufacturing is increasingly becoming time-compressing, precise and long-life oriented, owing to various needs from the consumers and harsh global competition. With the emergence of the layer laminate manufacturing method, it is possible to produce prototypes directly from 3D CAD and additive process, the production time and cost have shortened dramatically. However there are some problems like surface-step, dimensional deviation and warp. A newly developed powder casting is suitable for rapid-manufacturing metallic tools. Powder casting can serve as a promising rapid tooling method because of high density characteristics and low dimensional shrinkage below 0.1% during sintering and infiltration. By this process, we have realized significant time savings bypassing the wait for prototype tooling and cost savings eliminating the expense of conventional prototype tooling process.

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Implant Anneal Process for Activating Ion Implanted Regions in SiC Epitaxial Layers

  • Saddow, S.E.;Kumer, V.;Isaacs-Smith, T.;Williams, J.;Hsieh, A.J.;Graves, M.;Wolan, J.T.
    • Transactions on Electrical and Electronic Materials
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    • 제1권4호
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    • pp.1-6
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    • 2000
  • The mechanical strength of silicon carbide dose nor permit the use of diffusion as a means to achieve selective doping as required by most electronic devices. While epitaxial layers may be doped during growth, ion implantation is needed to define such regions as drain and source wells, junction isolation regions, and so on. Ion activation without an annealing cap results in serious crystal damage as these activation processes must be carried out at temperatures on the order of 1600$^{\circ}C$. Ion implanted silicon carbide that is annealed in either a vacuum or argon environment usually results in a surface morphology that is highly irregular due to the out diffusion of Si atoms. We have developed and report a successful process of using silicon overpressure, provided by silane in a CAD reactor during the anneal, to prevent the destruction of the silicon carbide surface, This process has proved to be robust and has resulted in ion activation at a annealing temperature of 1600$^{\circ}C$ without degradation of the crystal surface as determined by AFM and RBS. In addition XPS was used to look at the surface and near surface chemical states for annealing temperatures of up to 1700$^{\circ}C$. The surface and near surface regions to approximately 6 nm in depth was observed to contain no free silicon or other impurities thus indicating that the process developed results in an atomically clean SiC surface and near surface region within the detection limits of the instrument(${\pm}$1 at %).

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