• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.68.1-68.1
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• 2007

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.91-96
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• 1997

The electrical characteristics and the plasma parameters of planar inductively coupled plasmas (ICP) have been measured. The resistance of the total load including the coil and the plasma varied from 1 to 4 W and the inductance from 1.5 m to 2 mH when the power was changed from 100 to 1000 W and the pressure from 1 to 10 mTorr. The density of electron measured by Langmuir probe was over $10^{11}/\textrm{cm}^3$ and the temperature varied between 3 and 5 eV as the process conditions were changed. Bias modulation was adopted as a new method to improve the selectivity of $SiO_2$on Si in $C_4F_8$ (octafluorocyclobutane) plasma. The selectivity was improved as the duty ratio decreased, but the etch rate of $SiO_2$decreased below 400$\AA$/min. $H_2$addition to $C_4F_8$ plasma showed that the etch selectivity could be higher than 50 and the etch rate of $SiO_2$over 2000$\AA$/min when 60% $H_2$was added.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.11a
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• pp.226-229
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• 2001

현재 초소형 정밀기계(MEMS;Microelectromechanical System) 소자의 가장 큰 문제점으로 대두되고 있는 점착현상을 방지하기 위하여 불화유기박막을 증착하였다. Octafluorocyclobutane(C$_4$F$_{8}$)을 소스가스를 PECVD (Plasma Enhanced CVD)와 ICP (Inductively Coupled Plasma)를 이용하여 증착하였다. 여기에 Ar을 첨가하여 플라즈마의 반응성을 높여주었다. 형성된 불화유기박막의 나노트라이볼러지 특성을 살펴보기 위하여 AFM을 통하여 증착시킨 시편의 topography를 살펴보았다. 그리고 박막의 antiadhesion의 정도를 살펴보기 위하여 cantilever와 박막의 표면 사이에 존재하는 interaction force를 측정 하였고 AFM의 force curve mode를 이용하였다 PECVB를 이용하여 증착된 박막은 ICP를 이용한 박막보다 균일하지 못한 박막을 보였으며 attractive force가 강한 것으로 사료된다.