• Title/Summary/Keyword: C3a

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Characteristics of poly 3C-SiC doubkly clamped beam micro resonators (양단이 고정된 빔형 다결정 3C-SiC 마이크로 공진기의 특성)

  • Ryu, Kyeong-Il;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.217-217
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    • 2009
  • This paper describes the characteristics of polycrystalline 3C-SiC doubly clamped beam micro resonators. The polycrystalline 3C-SiC doubly clamped beam resonators with 60 ~ 100 ${\mu}m$ lengths, $10\;{\mu}m$ width, and $0.4\;{\mu}m$ thickness were fabricated using a surface micromachining technique. Polycrystalline 3C-SiC micro resonators were actuated by piezoelectric element and their fundamental resonant frequency was measured by a laser vibrometer in vacuum at room temperature. For the 60 ~ 100 ${\mu}m$ long cantilevers, the fundamental frequency appeared at 373.4 ~ 908.1 kHz. The resonant frequencies of doubly clamped beam with lengths were higher than simulated results because of tensile stress. Therefore, polycrystalline 3C-SiC doubly clamped beam micro resonators are suitable for RF MEMS devices and bio/chemical sensor applications.

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Building up the foundation for the elderly apparel industry through the development on shirt sloper of elderly obese males - Applying CLO 3D program - (노년 비만남성의 셔츠원형 개발을 통한 실버 의류산업 활성화 기반 구축 - CLO 3D 가상착의 시스템 활용 -)

  • Seong, Ok jin;Kim, Sook jin
    • The Research Journal of the Costume Culture
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    • v.28 no.3
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    • pp.299-312
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    • 2020
  • The purpose of this study is to create a shirt sloper suitable for an elderly male body shape by producing virtual models using a 3D-virtualization program, making a torso prototype using the Yuka CAD system, and employing 3D simulation to virtualize and calibrate the model. First, the following three types of obese dummies are implemented through the CLO 3D program: Type 1 exhibits body fat in the lower body; Type 2 exhibits an obese abdomen; and Type 3 displays a balanced form of obesity. Second, for the design of the shirt pattern, the waist back length (measured value+1), back armhole depth (C/10+12+3+0.5~1.5), front armhole depth (back armhole depth 0~1), front interscye (2C/10-1+0.5-0.5), armscye depth (C/10+2+3.5+ 0.5), back interscye (2C/10-1+1), front chest C (C/4+2.5+1), back chest C (C/4+2.5-1), front hem C (C/4+2.5+1(+2)), back hem C (C/4+2.5-1(+2)), cap height (AH/3-5), and biceps width (Front AH-1, Back AH-1) are calculated. Third, the virtual attachment of the shirt pattern is resolved by increasing the front and back armhole depths, and the front and rear wrinkles are improved by adding a back armhole dart. The front hem lift and lateral pull caused by the protrusion of the abdomen are amended by increasing the margin of the chest, waist C, and hip C, with the appearance improved by balanced margin distribution in the front, back, and side panels. The improved retail pattern with an increase in the front armholes C was balanced on the torso plate.

Properties of Liquid Phase Sintered SiC Materials Containing $Al_2O_3$ and $Y_2O_3$ Particles ($Al_2O_3$$Y_2O_3$ 입자를 함유한 액상소결 SiC 재료의 특성)

  • Lee, Sang-Pill;Lee, Moon-Hee;Lee, Jin-Kyung
    • Journal of Ocean Engineering and Technology
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    • v.22 no.4
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    • pp.59-64
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    • 2008
  • The mechanical properties of liquid phase sintered (LPS) SiC materials, with the addition of oxide powder, were investigated, in conjunction with a detailed analysis of their microstructures. LPS-SiC materials were fabricated at a temperature of 1820 $^{\circ}C$ under an argon atmosphere, using three different starting sizes of SiC particles. The sintering additive for the fabrication of the LPS-SiC materials was an $Al_2O_3-Y_2O_3$ mixture with a constant composition ratio ($Al_2O_3/Y_2O_3$: 1.5). The particle sizes of the commercial SiC powderswere 30 nm, 0.3 $\mu$m, and 3.0 $\mu$m. The flexural strength of the LPS-SiC materials was also examined at elevated temperatures. A decrease in the starting size of the SiC particles led to an increase in the flexural strength of the LPS-SiC materials, accompanying a highly dense morphology with the creation of a secondary phase. Such a secondary phase was identified as $Y_3Al_2(AlO_4)2$. The flexural strength of the LPS-SiC materials greatly decreased with an increase in the test temperature, due to the creation of a large amount of pores.

C3 Glomerulonephritis associated with Anti-complement Factor H Autoantibodies in an Adolescent Male: A Case Report

  • Hyun, HyeSun;Kang, Hee Gyung;Cho, UiJu;Ha, Il-Soo;Cheong, Hae Il
    • Childhood Kidney Diseases
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    • v.25 no.1
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    • pp.29-34
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    • 2021
  • C3 glomerulonephritis (C3GN), a rare condition associated with dysregulation of the alternative pathway of the complement system, is histopathologically characterized by isolated or dominant C3 deposition in the renal glomeruli. We report a case of C3GN associated with anti-complement factor H (CFH) autoantibodies and CHF-related protein deficiency in an adolescent male. A 16-year-old adolescent male was admitted to a hospital with a 1-month history of generalized edema prior to presentation. Persistent microscopic hematuria and low serum C3 levels were incidentally detected at 7 and 10 years of age, respectively. Laboratory test results revealed hypoalbuminemia, nephrotic-range proteinuria, microscopic hematuria, and normal serum creatinine levels. The serum C3 and C4 levels were 17 mg/dL (normal 80-150 mg/dL) and 22 mg/mL (17-40 mg/mL), respectively. Renal biopsy showed typical features of C3GN. Further investigations revealed positive results on plasma anti-CFH autoantibody testing and a homozygous deletion of CFHR1 and CFHR3, which encode CFH-related proteins 1 and 3, respectively. Proteinuria persisted despite treatment with intravenous methylprednisolone, mycophenolate mofetil, and angiotensin-receptor blocker; however, his renal function remained stable. In conclusion, anti-CFH autoantibodies serve as important contributors to C3GN. This is the first case report that describes C3GN in an adolescent Korean male with anti-CFH autoantibodies and homozygous CFHR1 and CFHR3 deletion.

Toughening of SiC Whisker Reinforced Al2O3 Composite (SiC 휘스커 강화 Al2O3 복합재료의 고인화)

  • Kim Yon Jig;Song Jun Hee
    • Korean Journal of Materials Research
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    • v.14 no.9
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    • pp.649-654
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    • 2004
  • In this paper, the fracture toughness and mechanisms of failure in a random SiC-whisker/$Al_{2}O_3$ ceramic composite were investigated using in situ observations during mode I(opening) loading. $SiC_{w}/Al_{2}O_3$ composite was obtained by hot press sintering of $Al_{2}O_3$ powder and SiC whisker as the matrix and reinforcement, respectively. The whisker and powder were mixed using a turbo mill. The composite was produced at SiC whisker volume fraction of $0.3\%$. Compared with monolithic $Al_{2}O_3$, fracture toughness enhancement was observed in $SiC_{w}/Al_{2}O_3$ composite. This improved fracture toughness was attributed to SiC whisker bridging and crack deflection. $SiC_{w}/Al_{2}O_3$ composite exhibited typically brittle fracture behavior, but a fracture process zone was observed in this composite. This means that the load versus load-line displacement curve of $SiC_{w}/Al_{2}O_3$ composite from a fracture test may involve a small non-linear region near the peak load.

Crystal Growth of 3C-SiC Using HMDS Gas Source (HMDS 가스원을 이용한 3C-SiC의 결정성장)

  • Sun, Ju-Hun;Chung, Yun-Sik;Chung, Gwiy-Sang;Nishino, Shigehiro
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.735-738
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    • 2002
  • Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) substrate up to a thickness of $4.3{\mu}m$ by APCVD method using HMDS(hexamethyildisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was $4.3{\mu}m/hr$. The 3C-SiC epitaxical films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near $796cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The heteroepitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra$(2{\theta}=41.5^{\circ})$.

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Crystal Characteristics of 3C-SiC Thin-films Grown on 2 inch Si(100) wafer (2 inch Si(100)기판위에 성장된 3C-SiC 박막의 결정특성)

  • Chung, Su-Young;Chung, Yun-Sik;Ryu, Ji-Goo;Chung, Gwiy-Sang;Shigehiro, Nishino
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.452-455
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    • 2002
  • Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) substrate up to a thickness of $4.3{\mu}m$ by APCVD method using HMDS(hexamethyildisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was $4.3{\mu}m/hr$. The 3C-SiC epitaxical films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near $796cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The heteroepitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra$(2{\theta}=41.5^{\circ})$.

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Crystal Characteristics of 3C-SiC Grown on Si(100) Wafers (Si(100)기판상에 성장된 3C-SiC의 결정 특성)

  • Chung, Yun-Sik;Ryu, Ji-Goo;Seon, Joo-Heon;Chung, Soo-Yong;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05a
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    • pp.30-34
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    • 2002
  • Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) wafers up to a thickness of 4.3 ${\mu}m$ by APCVD method using HMDS(hexamethyldisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was 4.3 ${\mu}m$/hr. The 3C-SiC epitaxial films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near 796 $cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The heteroepitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$).

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Design on ultra low power consumption microhotplates based on 3C-SiC for high temperatures (고온용 저전력소비형 3C-SiC 마이크로 히터의 설계)

  • Jeong, Jae-Min;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.385-386
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    • 2008
  • This paper reports the design of the ultra low power consumption microhotplates for high temperatures. The microhotplates consisting of a platinum-based heating element on AlN/poly 3C-SiC layers were designed. The microhotplate is a $600\times600{\mu}m^2$ square shaped membrane made of $1{\mu}m$ thick ploy 3C-SiC suspended by four legs. The microhotplate was compared with $Si_3N_4/SiO_2/Si_3N_4$(NON) structure microhotplate by COMSOL simulation system. Thermal uniformity, power consumption and thermal characterizations of microhotplates based on 3C-SiC thin film are better than microhotplates with NON structure.

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Effect of Temperature at Different Performance Stages of Aphelinus varipes (Hym. Aphelinidae) Parasitizing the Green Peach Aphid, Myzus persicae (복숭아혹진딧물에 기생하는 목화면충좀벌의 발육단계별 온도영향)

  • Choi, Yong Seok;Hwang, In Su;Park, Deog Gee;Choe, Kwang Ryul
    • Korean journal of applied entomology
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    • v.51 no.4
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    • pp.343-348
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    • 2012
  • Developmental period, mummification, pupal mortality, and sex ratio of Korean strain of Aphelinus varipes F$\ddot{o}$rster parasitizing the green peach aphid, Myzus persicae were studied at 20, 25, 30, and $35^{\circ}C$ in controlled climate cabinets. The plastic container with a leaf disc of sweet pepper (Capsicum annuum L.) was used as experimental units. Green peach aphids at different developmental stages were reared in four different temperatures and presented to A. varipes for 12 hours. A female adult of A. varipes was allowed to parasitize for 12 hours in each plastic petri dish. The periods from egg to adult of A. varipes were 18.3 days, 14.7 days, 10.4 days, and 9.3 days at $20^{\circ}C$, $25^{\circ}C$, $30^{\circ}C$, and $35^{\circ}C$, respectively. The pupal mortalities of A. varipes were 0%, 1.5%, 2.8%, and 10.2% at $20^{\circ}C$, $25^{\circ}C$, $30^{\circ}C$, and $35^{\circ}C$, respectively. The mummifications of A. varipes were significantly different in all developmental stages of the aphid. The mummification of A. varipes parasitizing green peach aphid was the highest at 1st and 2nd in $20^{\circ}C$ and $25^{\circ}C$, but the highest at 3rd (84.4-85.0%) in $30^{\circ}C$ and $35^{\circ}C$. The host feedings of A. varipes were $20^{\circ}C$ (12.5%), $25^{\circ}C$ (17.3%), $30^{\circ}C$ (16%), and $35^{\circ}C$ (10.9%), respectively. The sex ratios of A. varipes female were $20^{\circ}C$ (49%), $25^{\circ}C$ (46%), $30^{\circ}C$ (69%), and $35^{\circ}C$ (60%), respectively.