• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1593-1595
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• 2002

Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) wafers up to a thickness of 4.3 ${\mu}m$ by APCVD method using HMDS(hexamethyildisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was 4.3 ${\mu}m/hr$. The 3C-SiC epitaxial films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near 796 $cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The hetero-epitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$).

• 한국식품영양학회지
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• 제7권2호
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• pp.95-99
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• 1994

In order to investigate the fatty acid composition of Korean pumpkins, this study was designed. Three samples of Korean pumpkins, A(yellowish ripe), B(unripe, 30 days old) and C(unripe, 20 days old) were used for fatty acid analysis by gas chromatography. The results were as follows : Pumkin C, B and A showed 10, 12 and 15 kinds of fatty acids, respectively. In case of palmitic acid(C16:0), pumpkin C, B and A showed 22.5%, 22.9% and 26.6%, respectively. In case of u linolenic acid(C18:3), pumpkin C, B and A showed 22.6%, 23.6% and 44.8%, respectively. In case of palmitoleic acid(Cl6:1), pumpkin C. B and A showed 12.4%, 10.1% and 0.5%, respectively. In case of oleic acid(C18:1), pumpkin C. B and A showed 9.2%, 7.7% and 2.8%, respectively, In case of stearic acid(C18:0), pumpkin C, B and A showed B.S%, 3.7% and 3.5%, respectively. The ratio of P/S was 1.4, 1.6 and 1.9 for sample C, B and A, respectively. The ratio of w-3/w-6 was 1.1, 0.9 and 2.6 for sample C, B and A, respectively. Through this study, the ripe pumpkin(sample A) was thought to be good enough in nutritional aspects of fatty acids, particularly a-linoleic acid, Cl8 : 3(u-3) series.

• Childhood Kidney Diseases
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• 제23권2호
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• pp.93-99
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• 2019

C3 glomerulopathy is a renal disorder involving dysregulation of alternative pathway complement activation. In most instances, a membranoproliferative pattern of glomerular injury with a prevalence of C3 deposition is observed by immunofluorescence microscopy. Dense deposit disease (DDD) and C3 glomerulonephritis (C3GN) are subclasses of C3 glomerulopathy that are distinguishable by electron microscopy. Highly electron-dense transformation of glomerular basement membrane is characteristic of DDD. C3GN should be differentiated from post-infectious glomerulonephritis and other immune complex-mediated glomerulonephritides showing C3 deposits.

• 한국세라믹학회지
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• 제56권2호
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• pp.191-196
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• 2019

This study assessed the feasibility of a Ti₃AlC₂ MAX phase as an Al-source for the formation of a mullite bond in the fabrication of porous SiC tubes with high strength. The as-received Ti₃AlC₂ was partially oxidized at 1200℃ for 30 min before using to minimize the abrupt volume expansion caused by oxidation during sintering. Thermal treatment at 1100-1400℃ for 3 h in air led to the formation of Al₂O₃ by the decomposition of Ti₃AlC₂, which reacted further with oxidation-derived SiO₂ on the SiC surface to form a mullite phase. The fabricated porous SiC tubes with a relative density of 48 - 62 % exhibited mechanical strengths of 80 - 200 MPa, which were much higher than those with the Al₂O₃ filler material. The high mechanical strength of the Ti₃AlC₂-added porous SiC was explained by the rigid mullite neck formation along with the retained Ti₃AlC₂ with good mechanical properties.

• 센서학회지
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• 제17권6호
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• pp.414-417
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• 2008

This paper describes the fabrication of a Pd/poly 3C-SiC Schottky diode and its characteristics, in which the poly 3C-SiC layer and Pd Schottky contact were deposited by using APCVD and sputter, respectively. Crystalline quality, uniformity, and preferred orientations of the Pd thin film were evaluated by SEM and XRD, respectively. Pd/poly 3C-SiC schottky diodes were fabricated and characterized by I-V and C-V measurements. Its electric current density Js and barrier height voltage were measured as $2{\times}10^{-3}A/cm^2$ and 0.58 eV, respectively. These devices were operated until about $400^{\circ}C$. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.

• 한국결정학회지
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• 제3권2호
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• pp.67-71
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• 1992

The crystal structure of the title compound was determined from single crystal X-ray dirt fraction study : C16H16NO3, Mr=271.316, orthorh ombic, Aba2, a=15.750(3), b=13.470(2), c=13.356 (2) A, V=2833A, Z=8, Dx=1.26 Mgm-3, λ(MoK a) =0.71069A, r=0.51mm-2, F(000)=1136, T=291 K, R=0.0414 for 728 unique observed [F≥3e(F)] reflections and 240 parameters. The molecule is nearly planar within 0.2 A with the torsion angle -179(2)°for C(4)-C(7)-C(8)-C(9).The into rmolecular interactions are mainly by van der Waals force with the nearest intermolecular distance 3.647A between O(3) and C(4) translated by half unit along band c-axes.

• Bulletin of the Korean Chemical Society
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• 제23권7호
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• pp.953-956
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• 2002

Excess molar volumes (Vm E ) of binary liquid mixtures: xC6H5CH3 + (1-x1)CH3CN or + (1-x1)C6H5NO2, or + (1-x1)C2H5NO2 have been determined as a function of mole fraction of C6H5CH3 (x) at a temperature of 303.15 K over a entire range of composition. The densities of the binary liquid mixtures were determined by pycnometrically. The VmE values of the mixtures have been found to be negative over the whole composition in order of C6H5CH3 + C6H5NO2, < C6H5CH3 + CH3CN, and < C6H5CH3 + C2H5NO2. The negative magnitude of VmE suggests the presence of intermolecular interaction in the three binary liquid mixtures.

• Radiation Oncology Journal
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• 제17권2호
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• pp.158-165
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• 1999

목적 : 유방암 환자의 피부 섬유모세포를 이용한 in vitro 배양 실험을 통하여 16 세포집락 비율 분포의 변화를 관찰하여 16 세포집락 비율과 in vitro 세포 노화 및 섬유모세포 공여자의 in vivo 연령과의 연관성을 조사하고자 하였다. 대상 및 방법 :유방암 수술을 받은 3명의 환자로부터 얻은 유방부위 피부를 본 실험대상으로 사용하였다. 각 환자의 유방부위 피부로부터 얻은 피부 섬유모세포 표본의 명칭을 C1, C2, C3a 및 C3b로 분류하였으며 각 표본 공여자의 연령은 C1이 44세, C2는 54세, 그리고 C3a 및 C3b는 동일한 공여자로서 연령은 55세였다. 피부 섬유모세포의 단일세포 부유액은 일차조직 배양법으로 얻었으며 100 개의 세포들을 100m1 의 조직배양 flask에 분주 후 37$^{\circ}C$에서 2주 동안 배양하였다. 5개의 flask에서 배양한 피부 섬유모세포의 16 세포집락 비율을 알기 위하여 crystal violet으로 염색한 후 10 배율의 입체현미경을 이용하여 16개 세포 이상으로 구성된 세포집락수를 1개 이상으로 구성된 세포 집락수로 나눈 수치를 16 세포집락 비율로 나타내었으며 각각 5개의 flask에서 얻어진 16 세포집락 비율 평균치를 각 계대배양에 대한 16 세포집락 비율로 나타내었다. C1, C2의 계대배양 횟수는 각각 12회, 17회 였으며 C3a와 C3b는 14회 계대배양 하였다. 결과 : C1, C2, C3a 및 C3b 피부섬유모세포 모두에서 16 세포집락 비율이 계대배양 횟수의 증가에 따라 감소하는 경향을 보였으며, 집단이배화증가에 따라 감소하였다. 그리고 계대배양 횟수가 증가함에 따라 집단이배화가 증가되는 것이 관찰되었으며 특히 C3a 섬유모세포의 상관계수가 0.954(P=0.0001)로서 가장 강한 상관관계가 있음을 보였다 동일한 지점의 집단이배화에서 16 세포집락 비율이 고연령자인 C3a 공여자보다 저 연령자인 C1 공여자에서 더 높게 나타났다. 결론 : 사람 피부 섬유모세포의 in vitro 배양에서 계대배양 횟수의 증가에 따라 집단이배화는 증가되고, 세포 노화로 인해 16 세포집락 비율은 감소되는 것을 알 수 있었다. 또한 저연령의 피부 섬유모세포일수록 집단이배화 증가에 따른 16 세포집락 비율 감소가 고연령의 경우보다 완만하였다. 따라서 피부 섬유모세포 in vitro 배양에서 관찰되는 16 세포집락 비율은 in vitro 세포노화의 지표로서 유용하며 또한 피부 섬유모세포 공여자의 연령 평가에 이용될 수 있을 것으로 사료된다.

• 대한화학회지
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• 제36권4호
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• pp.536-539
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• 1992

8원자-고리를 가지고 있는 Spiro Orthocarbonate(C$_{25}H_{20}O_4$)의 분자 및 결정구조를 X-선법으로 연구하였다. 이 결정은 단사정계이고 공간군은 C2/c이다. 단위세포 길이는 a = 15.319(4), b = 9.057(3), c = 13.168(3)${\AA}$이며, ${\beta}$값은 98.53(3)$^{\circ}$이고 Z = 4이다. 회절 반점들의 세기는 흑연 단색화 장치가 있는 자동 4축회절기로 얻었으며 Mo-K${\alpha}$ X-선(${\lambda}$ = 0.7107 ${\AA}$)을 사용하였다. 분자구조는 직접법으로 풀었으며 최소자승법으로 정밀화 하였고, 최종 신뢰도 R값은 1412개의 회전반점에 대하여 0.052였다. 분자는 C$_2$ 점군에 속하는 대칭성을 갖고 있다. 8원자-고리의 형태는 pseudo-C$_s$ symmetry를 갖는 의자형이다. 두 개의 나프탈렌 고리들은 서로 거의 직각을 이루며 고리내의 C-C 결합길이는 1.352∼1.444${\AA}$범위에 있고 내부결합 각도는 117.2∼123.1$^{\circ}$범위에 있다. 8원자-고리의 영향으로 C(1)-C(9), C(8)-C(9) 그리고 C(9)-C(10)이 다른 C-C 결합길이 보다 약간 길다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.133-136
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• 2004

In this study, the characteristics of 3C-SiC ohmic contact were investigated. Titanium-tungsten(TiW) films were used for contact metalization. The ohmic contact resistivity between 3C-SiC and TiW was measured by HP4155 and then calculated with the circular transmission line method(C-TLM). And also the physical properties of TiW and the interface between TiW and 3C-SiC were analyzed using XRD and AES. TiW films make a good role of a diffusion barrier and their contact properties with 3C-SiC are stable at high temperature.