• 한국영어학회지:영어학
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• 제4권2호
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• pp.117-149
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• 2004

The paper is to argue against the asymmetric CP-V2 analysis of Old English, according to which finite verbs invariably undergo movement into a clause-final T within subordinate clauses and reach the functional head C within main clauses. The asymmetric CP-V2 analysis, first of all, faces difficulty in explaining a wide range of post-verbal elements within subordinate clauses. To resolve the problem, the analysis has to abandon the obligatoriness of V-to-T movement or introduce various types of extraposition whose status is dubious as a legitimate syntactic operation. Obligatory V-to-T movement in Old English lacks conceptual justification as well. Crosslinguistic evidence reveals that morphological richness in verbal inflection cannot entail overt verb movement. Moreover, the operation is always string-vacuous under the asymmetric CP- V2 analysis and has no effect at the interfaces, in violation of the principle of economy. The distribution of Old English finite verbs in main clauses also undermines the asymmetric CP-V2 analysis. Conceptually speaking, a proper syntactic trigger cannot be confirmed to motivate obligatory verb movement to C. The operation not only gets little support from nominative Case marking, the distribution of expletives, or complementizer agreement but also requires the unconvincing stipulation that expletives as well as sentence-initial subjects result from string-vacuous topicalization. Finally, textual evidence testifies that Old English sometimes permits non-V2 ordering patterns, many of which remain unexplained under the asymmetric CP-V2 analysis.

• Journal of Radiation Protection and Research
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• 제22권3호
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• pp.143-151
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• 1997

NaI(TI) 검출기의 파고는 용도에 따라 변하기 때문에, 온도 변화는 분광분석기의 에너지 교정에 영향을 미친다. 외부 선원을 사용하여 파고의 온도 의존성을 보상할 수 있으나 이것은 바람직하지 않은 콤프턴 영향을 야기한다. 이 연구에서는 환경중의 감마선 스펙트럼에서 뚜렸한 $^{212}Pb$로부터의 239 keV 피크, $^{214}Pb$로부터의 351 keV 피크, 40K로부터의 1460 keV 피크, $^{208}Tl$으로 부터의 2614 keV 피크를 에너지 교정의 기준 피크로 사용하였다. 이들 피크를 이용하는 방법은 마이크로소프트사의 Visual Basic으로 프로그램화하였다. 이렇게 개발된 프로그램은 신뢰성과 적용성을 검증하기 위해 $-20^{\circ}C$ 부터 $10^{\circ}C$까지 변하는 온도에서 30분 간격으로 측정한 환경 스펙트럼에 적용하였다. 그 결과로써 일상의 기온에서 측정한 $3'{\times}3'$ NaI(Tl) 검출기의 스펙트럼에 대해 이 방식의 에너지 교정은 효과적임이 입증되었다.

• 한국항행학회논문지
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• 제24권6호
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• pp.521-526
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• 2020

본 논문은 상용차의 자율 군집주행 플랫폼을 평가함에 있어 차량 환경용 C-ITS 통신프로토콜인 WAVE 통신 및 LTE-V2X 통신과 상용 이동통신인 Legacy LTE 통신을 결합한 하이브리드 V2X 통신 플랫폼의 설계 방안을 제안하고 설계과정을 제시한다. 안전하고 효율적인 자율 군집주행 플랫폼을 위해 C-ITS 통신 기반의 저 지연 통신기능이 요구되며 또한 이를 관제하기 위해서 상시 연결이 가능한 Legacy LTE 등의 상용 통신기능이 요구된다. 이러한 시스템을 평가하기 위해서 평가 장비는 동일 수준 이상의 통신성능을 가져야 한다. 본 논문에서 제시되는 주요 설계 내용은 기능 평가를 위한 하이브리드 V2X 단말기 구현에 적용될 예정이다.

• 한국재료학회지
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• 제11권10호
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• pp.889-894
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• 2001

2wt% $Al_2O_3-doped$ ZnO (AZO) thin films were deposited on sapphire (0001) single crystal substrate by parellel type rf magnetron sputtering at 55$0^{\circ}C$. The as-grown AZO thin films was polycrystalline and showed only broad deep defect-level photoluminescence (PL). In order to examine the change of PL property, AZO thin films were annealed in $N_2$ (N-AZO) and $H_2$ (H-AZO) at the temperature of $600^{\circ}C$~$1000^{\circ}C$ through rapid thermal annealing. After annealed at $800^{\circ}C$, N-AZO shows near band edge emission (NBE) with very small deep-level emission, and then N-AZO annealed at $900^{\circ}C$ shows only sharp NBE with 219 meV FWHM. In Comparison with N-AZO, H-AZO exhibits very interesting PL features. After $600^{\circ}C$ annealing, deep defect-level emission was quire quenched and NBE around 382 nm (3.2 eV) was observed, which can be explained by the $H_2$passivation effect. At elevated temperature, two interesting peaks corresponding to violet (406 nm, 3.05 eV) and blue (436 nm, 2.84 eV) emission was firstly observed in AZO thin films. Moreover, peculiar PL peak around 694 nm (1.78 eV) is also firstly observed in all the H-AZO thin films and this is believed good evidence of hydrogenation of AZO. Based on defect-level scheme calculated by using the full potential linear muffin-tin orbital (FP-LMTO), the emission 3.2 eV, 3.05 eV, 3.84 eV and 1.78 eV of H-AZO are substantially deginated as exciton emission, transition from conduction band maximum to $V_{ Zn},$ from $Zn_i$, to valence band maximum $(V_{BM})$ and from $V_{o} to V_BM}$, respectively.

• The Korean Journal of Physiology and Pharmacology
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• 제5권1호
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• pp.93-98
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• 2001

The precise mechanism of set-point regulation in hypothalamus was not elucidated. Nitric oxide synthases(NOS) were detected in hypothalamus, however, the roles of NO in hypothalamus was not fully studied. So, we tested the effects of NO on body temperature because preoptic-anterior hypothalamus was known as the presumptive primary fever-producing site. NO donor sodium nitroprusside (SNP, 4 nmol, i.c.v.) elicited marked febrile response, and this febrile response was completely blocked by indomethacin (a cyclooxygenase inhibitor). But, ODQ (selective guanylate cyclase inhibitor, $50\;{\mu}g,$ i.c.v.) did not inhibit fever induced by SNP. The cyclic GMP analogue dibutyryl-cGMP $(100\;{\mu}g,\;i.c.v.)$ induced significant pyreses, which is blocked by indomethacin. $N^G-nitro-L-arginine$ methyl ester (L-NAME, non selective NOS inhibitor) inhibited fever induced by $interleukin-1{\beta}\;(IL-1{\bata},\;10\;ng,\;i.c.v.),$ one of endogenous pyrogens. These results indicate that NO may have an important role, not related to stimulation of soluble guanylate cyclase, in the signal pathway of thermoregulation in hypothalamus.

• 한국전기전자재료학회논문지
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• 제27권10호
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• pp.618-622
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• 2014

The temperature dependent characteristics on the properties of SiC Schottky Diode has been investigated. In this study, the temperature dependent current-voltage characteristics of the SiC Schottky diode were measured in the range of 300 ~ 500 K. Divided into pre- and post- irradiated device was measured. The barrier height after irradiation device at 500 K increased 0.15 eV compared to 300 K, the barrier height of pre- neutron irradiated Schottky diode increased 0.07 eV. The effective barrier height after irradiation increased from 0.89 eV to 1.05 eV. And ideality factor of neutron irradiated Schottky diode at 500 K decreased 0.428 compared to 300 K, the ideality factor of pre- neutron irradiated Schottky diode decreased 0.354. Also, a slight positive shift in threshold voltage from 0.53 to 0.68 V. we analyzed the effective barrier height and ideality factor of SiC Schottky diode as function of temperature.

• 한국전기전자재료학회논문지
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• 제28권11호
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• pp.721-726
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• 2015

In this study, the properties of C-V degradation for thermal conductivity silicone rubber sample which is attached by copper-copper, copper-aluminum, aluminum-aluminum on upper-side and under-side has been measured at temperature of $80^{\circ}C{\sim}140^{\circ}C$. The results of this study are as follows. In case the frequency is increased, it found that the electrostatic capacity increased with increasing temperature to $80^{\circ}C$, $110^{\circ}C$, $140^{\circ}C$ regardless of kind of electrode. It found that the electrostatic capacity increased with becoming high temperature range of frequency regardless of kind of electrode. This result is considered to be caused by thermal absorption on the thermal conductivity silicone rubber sample. It found that the electrostatic capacity decreased with increasing temperature and frequency. This result is considered to be caused by molecular motion of C-F radical or OH radical.

• 한국산학기술학회논문지
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• 제20권7호
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• pp.16-19
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• 2019

박막이 얇아질수록 전기적인 특성이 좋아지려면 비정질구조가 유리하다. 비정질구조는 케리어가 공핍되는 특징을 이용하여 전도성을 높이는데 효과가 있을 수 있다. 이러한 특성을 확인하는 방법으로 전위장벽이 형성되는 쇼키접합에 대한 연구가 필요하다. 비정질구조와 쇼키접합에 대하여 조사하기 위하여 $SiO_2/SnO_2$ 박막을 준비하였으며, $SiO_2$ 박막은 Ar=20 sccm 만들고 $SnO_2$ 박막은 아르곤과 산소의 유량을 각각 20 sccm으로 혼합가스를 사용하였으며, 마그네트론 스퍼터링 방법으로 $SnO_2$의을 증착하고 $100^{\circ}C$와 $150^{\circ}C$에서 열처리를 하였다. 비정질구조가 만들어지는 조건을 알아보기 위하여 XRD 패턴을 조사하고 C-V, I-V 측정을 실시하여 Al 전극을 만들고 전기적인 분석을 실시하였다. 공핍층은 열처리과정을 통하여 전자와 홀의 재결합으로 형성되는데 $SiO_2/SnO_2$ 박막은 $100^{\circ}C$에서 열처리를 한 경우 공핍층이 잘 형성이 되었으며, 미시영역에서는 전기적으로 전류가 크게 작용하는 것을 확인하였다. $100^{\circ}C$에서 열처리를 한 비정질의 $SiO_2/SnO_2$ 박막은 XRD 패턴에서 $33^{\circ}$에서는 픽이 나타나지 않았으며, $44^{\circ}$에서는 픽이 생겼다. 쇼키접합에 의해서 거시적(-30V<전압<30V)으로는 절연체 특성이 보였으나 미시적(-5V<전압<5V)으로는 전도성이 나타났다. 케리어가 부족한 공핍층에서의 전도는 확산전류에 의하여 전도가 이루어진다. 미소영역에서 동작하는 소자인 경우에는 공핍효과에 의한 쇼키접합이 전류의 발생과 전도에 유리하다는 것을 확인하였다.

• 멤브레인
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• 제20권1호
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• pp.62-68
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• 2010

Cermet 분리막 제조를 위한 혼합 분말은 60 vol.% vanadium과 $Y_2O_3$-stabilized $ZrO_2$ (YSZ)를 기계적으로 혼합하여 준비하였다. 혼합 분말을 원판으로 압축한 후 진공 분위기에서 $1600^{\circ}C$로 2시간동안 소결하였다. 소결 분리막은 치밀하였고, 브레이징 필러를 이용하여 스테인레스 링에 장착되었다. V/YSZ 분리막의 수소 투과량은 100% 수소를 흘려 $200{\sim}350^{\circ}C$ 범위에서 측정되었다. $350^{\circ}C$, 0.5 bar압력에서 분리막의 양 표면에 균열이 형성되었다. 투과실험 동안에 V/YSZ 분리막의 vanadium은 수소와 반응하여 $V_2H$를 생성하였으며, 이로 인해 분리막이 균열되는 것을 알 수 있었다.

• Transactions on Electrical and Electronic Materials
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• 제3권2호
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• pp.10-15
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• 2002

In this paper, the electrical characteristics of fabricated p+-n junction diode are demonstrated and interpreted with different theoretical calculations. Dopants distribution by boron ion implantation on silicon wafer were simulated with TRIM-code and ICECaEM simulator. In order to make electrical activation of implanted carriers, thermal annealing treatments are carried out by RTP method for 1min. at $1000^{circ}C$ under inert $N_2$ gas condition. In this case, profiles of dopants distribution before and after heat treatments in the substrate are observed from computer simulations. In the I-V characteristics of fabricated diodes, an analytical description method of a new triangular junction model is demonstrated and the results with calculated triangular junction are compared with measured data and theoretical calculated results of abrupt junction. Forward voltage drop with new triangular junction model is lower than the case of abrupt junction model. In the C-V characteristics of diode, the calculated data are compared with the measured data. Another I-V characteristics of diodes are measured after proton implantation in electrical isolation method instead of conventional etching method. From the measured data, the turn-on characteristics after proton implantation is more improved than before proton implantation. Also the C-V characteristics of diode are compared with the measured data before proton implantation. From the results of measured data, reasonable deviations are showed. But the C-V characteristics of diode after proton implantation are deviated greatly from the calculated data because of leakage currents in defect regions and layer shift of depletion by proton implantation.