• 폴리머
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• 제25권1호
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• pp.49-55
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• 2001

비닐계 단량체인 아크릴로니트릴과 스티렌을 E-beam 전조사법에 의해 폴리프로필렌 섬유에 그라프트 반응시켜 PP-g-(AN/St) 공중합체를 제조한 후 아미드옥심기와 슬폰기를 도입하여 이관능성 이온교환섬유를 제조하였다. 그라프트율은 단량체 내에 아크릴로니트릴의 조성이 감소할수록 증가하였으며 최대 101.1%이었고 최대 아미드옥심화율은 7.2 mmol/g이었다. 또한 섬유상 이온교환체의 초기 열분해 온도는 120 ${\circ}C$ 이었고 함수율은 공중합체 내에 아미드옥심화율이 증가할수록 감소하였고 슬폰화율이 증가할수록 증가하는 경향을 나타냈다. APP-g-AN, SPP-g-St, ASPP-g-(AN/St) 이온교환체의 우라늄 흡착량은 각각 12.4, 34, 38mg/g이었으며 최적 흡착시간은 약 50시간이었다. 우라늄 흡착 실험결과, 본 실험에서 합성한 이온교환체 ASPP-g-(AN/St)는 $UO_2^{2+}$에 대하여 우수한 성능을 보였다.

• 방사선산업학회지
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• 제7권2_3호
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• pp.171-176
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• 2013

In previous study, the novel nanosized curdlan-silica complex for a sustain-releasing effect was developed by using gamma-irradiation. It can be applicable to use in various sustainr-eleasing formulation in agriculture industry. This study was conducted to investigate its storage stability and environmental toxicity in an accelerated condition. The complex samples were treated with high temperature condition ($65^{\circ}C$) during 3 weeks, and then sustain-releasing property of complex was verified thereby using Ion Chromatography on a weekly basis. The morphology of the complex was characterized using scanning electron microscopy (SEM). Results of Ion Chromatography analysis showed that sample treated for 3 weeks was similar to sustain-releasing pattern of non-treatment sample. We verify concluded that the complex is able to keep its sustain-releasing property and sustained-releasing in 3 years. Also the formulation has no environmental toxicity.

• 한국의학물리학회:학술대회논문집
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• 한국의학물리학회 2002년도 Proceedings
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• pp.202-205
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• 2002

This paper describes the spot scanning with $^{11}$ C beams for the Heavy Ion Medical Accelerator in Chiba (HIMAC). The concave-shaped irradiation field was optimized and the dose distribution was measured by 128-ch ionization chamber. Because of the wide momentum spread inherent in $^{11}$ C beams, the dispersion caused from the beam line and the scanning magnets should be taken into account to calculate the dose distribution of $^{11}$ C beams and their irradiated field. The reconstructed dose distribution is in good agreement with the experimental results.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2004년도 동계학술연구발표회 논문개요집
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• pp.89-90
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• 2004

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.301-301
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• 2008

Ion beam (IB)-induced alignment of inorganic materials has been investigated intensively as it provides controllability in a nonstop process for producing high-resolution displays[1][2]. LC orientation via ion-beam (IB) irradiation on the nitrogen doped diamond like carbon (NDLC) thin film deposited by physical deposition method-sputtering was embodied. The NDLC thin film that was deposited by sputter showed uniform LC alignment at the 1200eV of the ion beam intensity. The pretilt angle of LC on NDLC thin films was measured with various IB exposure time and angle. The maximum pretilt angle were showed with IB irradiation angle of $45^{\circ}$ and exposure time of 62.5 sec, respectively. To show NDLC thin film stability in high temperature, thermal stability test was proceeded. The uppermost of the thermal stability of NDLC thin film was $200^{\circ}C$. In this investigation, the electro-optical (EO) characteristics of LC on NDLC thin film were measured.

• 폴리머
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• 제24권2호
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• pp.174-181
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• 2000

방사선 전조사법을 이용하여 아크릴로니트릴을 ACF/PP 복합섬유에 그라프트 반응시켜 섬유형 ACF/PP-g-AN 공중합체를 합성하였다. 합성한 공중합체의 FT-lR 결과 2250$cm^{-1}$ / 부근에서 -C=N에 대한 피크, 3450$cm^{-1}$ / 부근에서 -OH와 -NH$_2$에 의한 피크 확인으로 그라프트 반응 및 아미드옥심화 반응을 확인할 수 있었다. 아미드옥심화된 ACF/PP-g-AN 공중합체의 우라늄 이온에 대한 흡착능의 최적시간은 8일이었으며, 최적 pH는 8이었다. 동일 조건하에서의 흡착능은 아미드옥심기의 함량이 증가할수록, 그라프트율이 116.3%일 때 최대 흡착능을 나타내었다. 또한 ACF/PP-g-AN 공중합체는 10회 이상 흡착능의 변화없이 흡탈착이 가능한 홉착제임을 알 수 있었다.

• Progress in Superconductivity
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• 제3권1호
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• pp.5-12
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• 2001

Our experimental research focuses on manipulating pinning deflects to alter the phase diagram of vortex matter, creating new vortex phases. Vortex matter offers a unique opportunity for creating and studying these novel phase transitions through precise control of thermal, pinning and elastic energies. The vortex melting transition in untwinned YB $a_2$C $u_3$ $O_{7-}$ $\delta$/ crystals is investigated in the presence of disorder induced by particle irradiation. We focus on the low disorder regime, where a glassy state and a lattice state can be realized in the same phase diagram. We follow the evolution of the first order vortex melting transition line into a continuous transition line as disorder is increased by irradiation. The transformation is marked by an upward shift in the lower critical point on the melting line. With columnar deflects induced by heavy ion irradiation, we find a second order Bose glass transition line separating the vortex liquid from a Bose glass below the lower critical point. Furthermore, we find an upper threshold of columnar defect concentration beyond which the lower critical point and the first order melting line disappear together. With point deflect clusters induced by proton irradiation, we find evidence for a continuous thermodynamic transition below the lower critical point..

• KIEE International Transactions on Electrophysics and Applications
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• 제4C권4호
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• pp.181-184
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• 2004

Thin films of single phase, polycrystalline silicon germanium (Si$_{1-x}$ Ge$_{x}$) were prepared by ion-beam evaporation (IBE) using Si-Ge multi-phase targets. After irradiation of the targets by a pulsed light ion beam with peak energy of 1 MV, 450 and 480 nm thick films were deposited on Si single crystal and quartz glass substrates, respectively. From XRD analysis, the thin films consisted of a single phase Si$_{1-x}$ Ge$_{x}$, whose composition is close to those of the targets.rgets.

• Nuclear Engineering and Technology
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• 제47권5호
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• pp.608-616
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• 2015

The migration of silver (Ag) in silicon carbide (SiC) and $^{110m}Ag$ through SiC of irradiated tristructural isotropic (TRISO) fuel has been studied for the past three to four decades. However, there is no satisfactory explanation for the transport mechanism of Ag in SiC. In this work, the diffusion coefficients of Ag measured and/or estimated in previous studies were reviewed, and then pre-exponential factors and activation energies from the previous experiments were evaluated using Arrhenius equation. The activation energy is $247.4kJ{\cdot}mol^{-1}$ from Ag paste experiments between two SiC layers produced using fluidized-bed chemical vapor deposition (FBCVD), $125.3kJ{\cdot}mol^{-1}$ from integral release experiments (annealing of irradiated TRISO fuel), $121.8kJ{\cdot}mol^{-1}$ from fractional Ag release during irradiation of TRISO fuel in high flux reactor (HFR), and $274.8kJ{\cdot}mol^{-1}$ from Ag ion implantation experiments, respectively. The activation energy from ion implantation experiments is greater than that from Ag paste, fractional release and integral release, and the activation energy from Ag paste experiments is approximately two times greater than that from integral release experiments and fractional Ag release during the irradiation of TRISO fuel in HFR. The pre-exponential factors are also very different depending on the experimental methods and estimation. From a comparison of the pre-exponential factors and activation energies, it can be analogized that the diffusion mechanism of Ag using ion implantation experiment is different from other experiments, such as a Ag paste experiment, integral release experiments, and heating experiments after irradiating TRISO fuel in HFR. However, the results of this work do not support the long held assumption that Ag release from FBCVD-SiC, used for the coating layer in TRISO fuel, is dominated by grain boundary diffusion. In order to understand in detail the transport mechanism of Ag through the coating layer, FBCVD-SiC in TRISO fuel, a microstructural change caused by neutron irradiation during operation has to be fully considered.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.16-17
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• 2005

Local lifetime control by ion implantation has become an useful tool for production of modern power devices. In this work, punch-through diodes were irradiated with protons for the high speed power diode fabrication. Proton irradiation was executed at the various energy and dose conditions. Characterization of the device was performed by I-V, C-V and Trr measurement. We obtained enhanced reverse recovery time characteristics which was about 45% of original device and about 73% of electron irradiated device. The measurement results showed that proton irradiation was able to effectively reduce minority carrier lifetime.