• 제목/요약/키워드: C-axis growth

검색결과 295건 처리시간 0.026초

A STUDY OF MAGNETIC ALIGNMENT OF DIE-UPSET Pr-Fe-B-Cu MAGNETS

  • Kwon, H.W.;Ma, T.J.;Harris, I.R.
    • 한국자기학회지
    • /
    • 제5권5호
    • /
    • pp.416-420
    • /
    • 1995
  • An attempt has been made to investigate the mechanism of magnetic alignment in the magnets produced by upset forging the $Pr_{20}Fe_{74}B_{4}Cu_{2}$ cast bulk alloy. Upset forging of the cast alloy was carried out for 20 sec to an 80 % thickness reduction (strain rate : $4{$\times}10^{-2}s^{-1}$) in an open die configuration at varying temperatures in the range $600^{\circ}-900^{\circ}C$. It has been found that the upset forging process at temperatures above $800^{\circ}C$ can achieve a magnetic alignment to a great extent from copper-containing Pr-Fe- B-type cast ingot. The growth manner of the ferromagnetic $Pr_{2}Fe_{14}B$ matrix grain in Pr-Fe-B-type alloys was studied by examining the morphology change of the matrix grain in sintered body, and it was found that the matrix grains grew in anisotropic manner such that the grain grew more rapidly along the a- or b-axis than along the c-axis. This anisotropic grain growth led to the plate-like shape of the matrix grain. The magnetic alignment during the upset forging was attributed to grain boundary gliding of the plate-like grains, and the geometry of the grains in the cast ingot and the presence of a large amount of the praseodymium-rich grain boundary phase were thought to play a key role in the achievement of magnetic alignment.

  • PDF

화학기상증착법으로 성장시킨 단결정 6H-SiC 동종박막의 성장 특성 (Growth characteristics of single-crystalline 6H-SiC homoepitaxial layers grown by a thermal CVD)

  • 장성주;설운학
    • 한국결정성장학회지
    • /
    • 제10권1호
    • /
    • pp.5-12
    • /
    • 2000
  • Silicon carbide(SiC)는 뛰어난 전기적, 열적, 물리적 특성 때문에 내환경 전자소자용 반도체 재료로 널리 연구되고 있다. 본 연구에서는 화학기상증착법으로 단결정 6H-SiC 동종박막을 성장시키고 이의 성장 특성을 조사하였다. 특히, 몰리브덴 (Mo)-plate를 이용하여 SiC를 코팅하지 않은 graphite susceptor를 사용한 6H-SiC 동종박막 성장조건을 성공적으로 얻었다. 대기압 상태의 RF-유도가열식 챔버에서 CVD성장을 수행하였고, <1120> 방향으로 $3.5^{\circ}$off-axis된 기판을 사용하였다. 성장 박막의 결정성을 평가하기 위하여 Nomarski 관찰, 투과율 측정 , 라만 분광, XRD, 광발광(PL) 분광, 투과전자현미경(TEM) 측 정 등의 방법을 이용하였다. 이상과 같은 실험을 통하여, 본 연구에서는 성장온도 $1500^{\circ}C$, C/Si flow ratio ($C_3H_8$ 0.2 sccm, $SiH_4$ 0.3 sccm)인 성장조건에서 결정성이 가장 좋은 6H-SiC 동종박막을 얻을 수 있었다.

  • PDF

Crystal Growth of Sapphire for GaN Substrates

  • Yu, Y.M.;Jeoung, S.J.;Koh, J.C.;Ryu, B.H.
    • 한국결정성장학회:학술대회논문집
    • /
    • 한국결정성장학회 1998년도 PROCEEDINGS OF THE 14TH KACG TECHNICAL MEETING AND THE 5TH KOREA-JAPAN EMGS (ELECTRONIC MATERIALS GROWTH SYMPOSIUM)
    • /
    • pp.157-159
    • /
    • 1998
  • Sapphire crystals were grown by Horizontal Bridgman method. The effects of sliding rate (growth rate) of Molybdenum container, growth atmosphere, temperature gradient and orientation of see on crystal qualities were investigated. The size of the crystals grown was up to 150-200 mm in length, 90 mm in width and 25-35 mm in thickness. Crystals grown under the optimum conditions were colorless, transparent and could not be observed and macroscopic defects, such as bubbles, cracks, twins and mosaic structure. With the grown crystals, prototypes of sapphire substrate for blue wafers were characterized. As a result, we can get hight quality of sapphire wafers with c-axis, 1.5 inches in diameters and 0.33 mm in thickess.

  • PDF

스퍼터링에 의한 산화아연박막의 구조적 특성 및 전파경계조건 (Constructional Characteristics and Propagation Conditions on ZnO Films by Sputtering)

  • 이동윤
    • 한국콘텐츠학회:학술대회논문집
    • /
    • 한국콘텐츠학회 2009년도 춘계 종합학술대회 논문집
    • /
    • pp.807-809
    • /
    • 2009
  • 압전성을 갖는 산화아연 박막을 스퍼터링을 이용하여 실리콘 기판위에 증착하였고 여러 증착 공정변수들이 물성에 미치는 영향과 박막의 구조적 특성 및 전파경계조건을 고찰하였다. 특히, 평탄한 표면을 갖는 압전 박막을 제조하여 전파 특성에 우수한 증착조건을 제시하고 탄성표면파의 전파및 경계조건을 분석한다. 박막의 구조적 특성 분석을 위하여 여러가지 증착조건 중 아르곤과 산소의 가스비율 과 기판온도가 박막의 제조에 미치는 특성을 분석하였다. 스퍼터링 가스인 산소양이 50%이상으로 증가할수록 박막의 표면 거칠기가 나빠지는 특성을 보였다. 비저항과 표면형상은 유입되는 산소에 큰 영향을 받는다는 것을 알 수 있었다.

  • PDF

FePt/MgO(100) 자성박막의 결정화 연구 (Crystallization of FePt/MgO(100) magnetic thin films)

  • 정지욱;조태식;이민수
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
    • /
    • pp.278-279
    • /
    • 2005
  • The crystallization of FePt/MgO(100) magnetic thin films of various thicknesses has been studied using synchrotron x-ray scattering, atomic force microscope, and vibrating sample magnetometer. In film with a 500-${\AA}$-thick, ordered (fct) FePt phase was dominantly crystallized into perpendicular (001) grains keeping the magnetically easy c-axis normal to the film plane during annealing. In film with a 812-${\AA}$-thick, however, longitudinal (110) grains keeping the c-axis parallel to the film plane were grown on top of the perpendicular (001) grains. The behavior of the magnetic properties was consistent with the thickness dependence of the crystallization. We attribute the thickness dependence of the crystallization to the substrate effect, which prefers the growth of the c-axis oriented perpendicular grains near the film/substrate interfacial area.

  • PDF

Effects of Growth Temperature on the Properties of ZnO Thin Films Grown by Radio-frequency Magnetron Sputtering

  • Cho, Shin-Ho
    • Transactions on Electrical and Electronic Materials
    • /
    • 제10권6호
    • /
    • pp.185-188
    • /
    • 2009
  • The effects of the growth temperature on the properties of ZnO thin films were investigated by using X-ray diffraction, scanning electron microscopy, ultraviolet-visible spectrophotometry, and Hall measurements. The ZnO films were deposited by rf magnetron sputtering at various growth temperatures in the range of 100-$400{^{\circ}C}$. A strong c-axis preferred orientation is observed for all of the samples. As the growth temperature increases, the crystalline orientation of the ZnO (002) plane is not changed, but the full width at half maximum gets smaller. The dependence of the electron concentration, mobility, and resistivity on the growth temperature exhibits that the ZnO films have a higher electron concentration at higher temperatures, thus giving them a low resistivity. The optical transmittance and band gap energy, calculated from the spectra of optical absorbance, show a significant dependence on the growth temperature. As for the sample grown at $100{^{\circ}C}$, the average transmittance is about 90% in the visible wavelength range and the band gap is estimated to be 3.13 eV.

부유대용융법에 의한 YMnO$_3$단결정 성장 (The growth YMnO$_3$ single crystals using a floating zone method)

  • 권달회;강승구;김응수;김유택;심광보
    • 한국결정성장학회지
    • /
    • 제10권4호
    • /
    • pp.279-285
    • /
    • 2000
  • 부유대용융법에 의해 비휘발성 기억소자용 강유전성물질인 $YMnO_3$단결정을 육성하였다. 결정성장전 YMnO$_3$분말의 최적합성조건은 $1200^{\circ}C$에서 10시간, 최적원료봉 소결조건으로 $1500^{\circ}C$에서 10시간이었다. 초기 Seed가 없는 상태에서의 실험에서 성장된 단결정의 우선성장방위는 X-ray Laue분석을 통하여 [1010] 임을 알수 있었고 이 결정을 seed로 사용하여 c-축에 수직한 방향으로 $YMnO_3$단결정을 성장하였다 성장된 단결정은 직경 5mm, 길이 50 mm로 양질의 흑청색 결정이었다.

  • PDF

Grain growth and superconducting properties of melt-processed (Y-Sm-Nd)-Ba-Cu-O composite oxides

  • Kim, So-Jung
    • 한국결정성장학회지
    • /
    • 제15권4호
    • /
    • pp.141-144
    • /
    • 2005
  • [ $(Y_{0.5}Sm_{0.25}Nd_{0.25})Ba_2Cu_3O_y$ ] [(YSN)-123] high $T_c$ composite superconductors with $CeO_2$ addition were systematically investigated by top seeded melt growth (TSMG) process in air atmosphere. A melt textured $NdBa_2Cu_3O_y$ (Nd-123) single crystal was used as a seed for achieving the c-axis alignment large grains perpendicular to the surface of (YSN)-123 composite oxides. The size of $(Y_{0.5}Sm_{0.25}Nd_{0.25})_2BaCuO_5$ [(YSN)211] nonsuperconducting inclusions of the melt textured (YSN)-123 samples with $CeO_2$ addition were remarkably reduced and uniformly distributed within the (YSN)123 superconducting matrix except in the region very close to the Nd-123 seed crystal. The sample showed a sharp superconducting transition of 91 K.

SiC 휘스커 강화 알미늄기 복합재료의 미소 표면 피로균열의 발생 및 진전거동 (Initiation and Growth Behavior of Small Surface Fatigue Cracks on SiC Whisker Reinforced Aluminum Composite)

  • 최영근;이택순;김상태;서창민;이문환
    • 대한기계학회논문집A
    • /
    • 제24권6호
    • /
    • pp.1584-1592
    • /
    • 2000
  • Reversed plane bending fatigue tests were conducted on SiC whisker reinforced aluminum composite which were consolidated by squeeze casting process. Initiation and growth of small surface fatigue c racks were investigated by means of a plastic replica technique. The fatigue crack initiated in the vicinity of SiC whisker/matrix interface. It was found that a fatigue crack deflected along SiC whisker and grew in a zig-zag manner microscopically, although the crack propagated along the direction normal to the loading axis macroscopically. The coalescence of micro-cracks was observed in the tests conducted at high stress levels, but were not evident in tests in which lower levels of stress were applied. Due to the coalescence, a higher crack growth rate of small cracks rather than those of long cracks was recognized in da/dn -ΔK realtionship.

건조 온도에 따른 YMnO$_3$ 박막의 구조 및 전기적 특성 (Effect of drying temperature on the electrical and structural properties of YMnO$_3$ thin film)

  • 박재화;김경태;김창일;장의구
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2002년도 하계학술대회 논문집
    • /
    • pp.50-53
    • /
    • 2002
  • YMnO$_3$ thin films were spun-coated on the Pt/Ti/SiO$_2$/Si substrates by sol-gel process using alkoxides, and then dried on hot plates from 300 to 450 $^{\circ}C$. The prepared YMnO$_3$ thin films were annealed at 850 $^{\circ}C$ in O$_2$ atmosphere for 1 h. The crystallization of YMnO$_3$ thin films were improved to preferred c-axis orientation and the dielectric characteristics were progressed by increasing the drying temperature. The range of dielectric constant of thin film dried at 450 $^{\circ}C$ is 12.9-22.3 and close to that of YMnO$_3$ single crystal. The ferroelecrtic property of YMnO$_3$ thin film was observed on the YMnO$_3$ films. The maximum remnant polarization (2Pr) of YMnO$_3$ thin films dried at 450 $^{\circ}C$ was about 2.91 ${\mu}$ C/cm2. It was suggested that the drying temperature affect to the initial stage of thin film growth of preferred c-axis orientation.

  • PDF