• Korean Journal of Materials Research
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• v.4 no.1
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• pp.37-43
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• 1994

Y-Ra-Cu-0 oxide superconductors were fabricated by the sinter-forging method to make the critical current density improve through controlling of microstructure and crystal texture. The grain alignment of oxide superconductor was formed by the sinter-forging process and it's c-axis orientation was parallel to the press direction.The orientation factor of texture increased with sinking temperature and pressure, and also grain alignment was improved by the addition of Ag. As for the sinterforged Y-Ba-Cu-O/Ag sample, the $T_c$(on-set) was not almost varied with the sinter-forging temperature, but $T_c\;^{zero}$ decreased more or less at high sinter-forging temperatures. In addition, it was observed that added-Ag was mainly distributed along the grain boundar~es in the (123) matrix, resulting in the densification of microstructure. From these results, i t was thought that the improvement of $J_c$ over 2000A/$\textrm{cm}^2$ was attributed to the texture, densification of microstructure, and (123) grain growth due to the Ag addition.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.6
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• pp.237-241
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• 2014

We investigated the optimal etching conditions and properties of the surface change due to molten KOH/NaOH chemical wet etching using an AlN wafer which has been put to practical use in the present study. Results were observed using a scanning electron microscope after 5 minutes etching at $350^{\circ}C$, was found to have a surface form of the respective other Al-face, the N-face. In particular, etch-pit in the form of a hexagon, which is observed in the Al-face appeared, It was calculated at $2{\times}10^6/cm^2{\sim}10^{10}/cm^2$ dislocation density. In the case of N-face, lattice defects in the form of the hexagonal pyramids is formed. It was discovered that in order to observe the orientation of the wafer, which corresponds to the C-axis direction of the resulting hexagonal AlN which was analyzed using XRD (0002) and is a state of being oriented in the (0004) plane. The Radius of curvature of AlN wafer was 1.6~17 m measured by DC-XRD rocking curve position.

• Asian Pacific Journal of Cancer Prevention
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• v.13 no.12
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• pp.6299-6303
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• 2012

Insulin-like growth factor-binding protein-3 (IGFBP3) has been identified as a putative tumor suppressor with multifunctional roles in the IGF axis. Recently, there have been a growing body of studies investigating the relation between the IGFBP3 A-202C polymorphism, circulating IGFBP3 and prostate cancer risk, but their outcomes varied leading to controversy. Hence, it is necessary to perform a meta-analysis covering all eligible studies to shed a light on the association of IGFBP3 A-202C and cancer risk. Finally, we included a total of 11 relevant articles between 2003 and 2010 covering 14 case-control studies including 9,238 cases and 8,741 controls for our analysis. Our results showed that A-202C was a marginal risk factor of prostate cancer (allele contrast: OR=1.08, 95% CI :1.01-1.16; dominant model: OR=1.11, 95% CI :1.01-1.22; heterozygote codominant model: OR=1.11, 95% CI :1.03-1.18; homozygote contrast: OR=1.19, 95% CI :1.03-1.37). Stratification analysis revealed that sample size and control source were two major heterogeneous meta-factors especially in the recessive model (source: Population-based control group :p=0.30,I2=16.7%, Hospital-based control group: p=0.20, I2=30.3%; sample size: Small: p=0.22,I2= 32.8%, Medium: p=0.09,I2=48%, Large p=0.60,I2=0.0%); However, contrary to previous findings, no significance was found in racial subgroups. No significant publication bias was found in our analysis. Considering the robustness of the results and the discrepancy among some studies, there might be some unsolved confounding factors, and further more critical large studies are needed for confirmation.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.6
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• pp.1393-1398
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• 2015

In this study, the electrical and optical properties of GZO (Ga-doped ZnO) thin films prepared on PES substrates by RF magnetron sputtering method with various working pressures (5 to 20 mTorr) were investigated. All GZO thin films exhibited c-axis preferential growth regardless of working pressure, the GZO thin film deposited at 5 mTorr showed the most excellent crystallinity having 0.44˚ of FWHM. In AFM observations, surface roughness exhibited the lowest value of 0.20 nm in a thin film produced by the working pressure 5 mTorr. Figure of merits of GZO thin film deposited at 5 mTorr showed the highest value of 6652, in this case resistivity and average transmittance in the visible light region were 6.93×10^-4Ω-cm and 81.4%, respectively. We could observed the Burstein-Moss effect that carrier concentration decrease with the increase of working pressure and thus the energy band gap is narrowed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.230-233
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• 2004

The stochiometric mix of evaporating materials for the $CuInS_2$ single crystal thin films was prepared from horizontal furnance. Using extrapolation method of X-ray diffraction patterns for the $CuInS_2$ polycrystal, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.524\;{\AA}$ and $11.142\;{\AA}$, respectively. To obtain the single crystal thin films, $CuInS_2$ mixed crystal was deposited on throughly etched semi-insulator GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperature were 640 t and 430 t, respectively and the thickness of the single crystal thin films was $2{\mu}m$. Hall effect on this sample was measured by the method of van dot Pauw and studied on carrier density and temperature dependence of mobility. The carrier density and mobility deduced from Hall data are $9.64{\times}10^{22}/m^3,\;2.95{\times}10^{-2}\;m^2/V{\cdot}s$ at 293 K, respectively The optical energy gaps were found to be 1.53 eV at room temperature. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the thin film, we have found that the values of spin orbit coupling splitting ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 0.0211 eV and 0.0045 eV at 10 K, respectively. From PL peaks measured at 10K, 807.7nm (1.5350ev) mean Ex peak of the free exciton emission, also 810.3nm (1.5301eV) expresses $I_2$ peak of donor-bound exciton emission and 815.6nm (1.5201eV) emerges $I_1$ peak of acceptor-bound exciton emission. In addition, the peak observed at 862.0nm (1.4383eV) was analyzed to be PL peak due to donor-acceptor pair(DAP).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.414-414
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• 2008

Vertically well-aligned Ga-doped ZnO nanorods with different Ga contents were grown by thermal evaporation on a ZnO template. The Ga-doped ZnO nanorods synthesized with 50 wt % Ga with respect to the Zn content showed maximum compressive stress relative to the ZnO template, which led to a rapid growth rate along the c-axis due to the rapid release of stored strain energy. A further increase in the Ga content improved the conductivity of the nanorods due to the substitutional incorporation of Ga atoms in the Zn sites based on a decrease in lattice spacing. The p-n diode structure with Ga-doped ZnO nanorods, as a n-type, displayed a distinct white light luminescence from the side-view of the device, showing weak ultraviolet and various deep-level emissions.

• Korean Journal of Materials Research
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• v.22 no.10
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• pp.508-512
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• 2012

ZnO thin films were grown on a sapphire substrate by RF magnetron sputtering. The characteristics of the thin films were investigated by ellipsometry, X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL), and Hall effect. The substrate temperature and growth time were kept constant at $200^{\circ}C$ at 30 minutes, respectively. The RF power was varied within the range of 200 to 500 W. ZnO thin films on sapphire substrate were grown with a preferred C-axis orientation along the (0002) plan; X-ray diffraction peak shifted to low angles and PL emission peak was red-shifted with increasing RF power. In addition, the electrical characteristics of the carrier density and mobility decreased and the resistivity increased. In the electrical and optical properties of ZnO thin films under variation of RF power, the crystallinity improved and the roughness increased with increasing RF power due to decreased oxygen vacancies and the presence of excess zinc above the optimal range of RF power. Consequently, the crystallinity of the ZnO thin films grown on sapphire substrate was improved with RF sputtering power; however, excess Zn resulted because of the structural, electrical, and optical properties of the ZnO thin films. Thus, excess RF power will act as a factor that degrades the device characteristics.

• The Journal of the Korea institute of electronic communication sciences
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• v.19 no.1
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• pp.39-46
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• 2024

In this study, GTZO(Ga-Ti-Zn-O) thin films were deposited at various working pressures (1~7mTorr) by RF magnetron sputtering to examine the structural, electrical, and optical properties. All GTZO thin films exhibited c-axis preferential growth regardless of working pressure, the GTZO thin film deposited at 1mTorr showed the most excellent crystallinity having 0.38˚ of FWHM. The average transmittance in the visible light region (400~800nm) showed 80% or more regardless of the working pressure. We could observed the Burstein-Moss effect that carrier concentration decrease with the increase of working pressure and thus the energy band gap is narrowed. Figure of merits of GTZO thin film deposited at 1mTorr showed the highest value of 9.08 × 103 Ω-1·cm-1, in this case resistivity and average transmittance in the visible light region were 5.12 × 10-4 Ω·cm and 80.64%, respectively.

• Radiation Oncology Journal
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• v.15 no.3
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• pp.207-213
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• 1997

Purpose : Intracranial germinoma is the most radiocurable tumor of theprimary intracranial neoplasm. But, the optimum radiation dose and target volume remain controversial In this retrospective study, we analysed the spreading pattern at presentation and the pattern of the failure and survival of intracranial germinoma, Materials and Methods : From 1989 to 1996, 23 Patients were treated for intracranial germinoma at Department of Radiation Oncology, Twenty-one Patients were treated at their initial Presentation and 2 Patients were treated for recurrent disease. Six patients had multiple tumor masses on MRI and 7patients had ventricular seeding on MRI. The examination of cerebrospinal fluid cytology was done in 15 patients and 3 out of 15 patients had positive cerebrospinal cytology. In tumor marker study of $\alpha-FP\;and\;\beta-hCG$, 6 patients had mildly elevated $\beta-hCG$ in serum or cerebrospinal fluid. Twentyone Patients were treated with whole craniospinal axis irradiation and 2 Patients were given whole ventricular radiation therapy. The total dose was ranged between 4500cGy and 5600cGy to primary tumor site (median 5580cGy) Dose to the entire ventricular system ranged from 1980cGy to 3960 cGy (median 2700cGy) and dose to the spinal axis ranged from 2160cGy to 3900cGy (median 2700cGy) Results : Of 23 patients, 21 Patients are alive without evidence of diseasefor median 4 years follow-up. One Patient who had markedly elevated $\alpha-FP\;and\;\beta-hCG$, suffered from Persistent disease after radiation therapy and received 2 cycles of chemotherapy. She died 9 months after chemotherapy One patient who developed ventricular seeding after gamma-knife was treated with whole craniospinal irradiation, he died after 1 year due to probably brain necrosis. The hematologic toxicity of 3 or 4 grade were seen in 7 patients and patient's endocrinologic dysfunction was not deteriorated after radiation therapy. One patient had been treated with growth hormone replacement due to short stature. Conclusions : This retrospective study has confirmed the excellent result of radiation therapy in intracranial germinoma. The complication rate during or after radiation therapy is considered within acceptable range. ft is necessary to further investigate the optimal dose and treatment volume of radiation therapy. The role of chemotherapy in the treatment of intracranial germinoma should be further investigated.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.4
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• pp.138-147
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• 2001

The stochiometric mixtures mixture of evaporating materials for the $ZnIn_{2}S_{4}$ single crystal thin film was prepared from horizontal furnace. To obtain the $ZnIn_{2}S_{4}$ single crystal thin film, $ZnIn_{2}S_{4}$ mixed crystal was deposited on throughly etched semi-insulting GaAs(100) in the Hot Wall Epitaxy(HWE) system. The sourceand substrate temperature were $610^{\circ}C$ and $450^{\circ}C$, respectively and the growth rate of the $ZnIn_{2}S_{4}$ single crystal thin film was about 0.5$\mu\textrm{m}$/hr. The crystalline structure of $ZnIn_{2}S_{4}$ single crystal thin film was investigated by photoluminescence and double crystal X-ray diffraction (DCXD) measurement. The carrier density and mobility of $ZnIn_{2}S_{4}$ single crystal thin film measured from Hal effect by van der Pauw method are $8.51{\times}10^{17}{\textrm}{cm}^{-3}$, 291$\textrm{cm}^2$/V.s at $293^{\circ}$K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $ZnIn_{2}S_{4}$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$So and the crystal filed splitting DCr were 0.0148eV and 0.1678 eV at $10^{\circ}$K, respectively. From the photoluminescence measurement of $ZnIn_{2}S_{4}$ single crystal thin film, we observed free excition($E_{X}$) typically observed only in high quality crystal and neutral donor bound exicton ($D^{\circ}$, X) having very strong peak intensity. The full width at half maximum and binding energy of neutral donor bound excition were 9meV and 26meV, respectively. The activation energy of impurity measured by Haynes rule was 130meV.