• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.305-309
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• 2002

We have successfully fabricated a Metal-Ferroelectric-Insulator-Semiconductor (MFIS) structure using Bi$\sub$4-x/La$\sub$x/Ti$_3$O$\sub$12/ (BLT) ferroelectric thin film and SiO$_2$/Nitride/SiO$_2$ (ONO) stacked buffer layers for single transistor type ferroelectric nonvolatile memory applications. BLT films were deposited on 15 nm-thick ONO buffer layer by sol-gel spin-coating. The dielectric constant and the leakage current density of prepared ONO film were measured to be 5.6 and 1.0 x 10$\^$-8/ A/$\textrm{cm}^2$ at 2MV/cm, respectively, It was interesting to note that the crystallographic orientations of BLT thin films were strongly effected by pre-bake temperatures. X-ray diffraction patterns showed that (117) crystallites were mainly detected in the BLT film if pre-baked below 400$^{\circ}C$. Whereas, for the films pre-baked above 500$^{\circ}C$, the crystallites with preferred c-axis orientation were mainly detected. From the C-V measurement of the MFIS capacitor with c-axis oriented BLT films, the memory window of 0.6 V was obtained at a voltage sweep of ${\pm}$8 V, which evidently reflects the ferroelectric memory effect of a BLT/ONO/Si structure.

• Journal of the Korean Vacuum Society
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• v.17 no.3
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• pp.234-239
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• 2008

Tungsten and rhodium target tube for a 40 kV x-ray transmission anode was developed to apply to the hand-held XRF(X-Ray Fluorescence) apparatus and its characteristics were evaluated. From the measurement of the energy distribution and dose of x-ray, it was confirmed that our results were good agreements with the known ones. The optimum thickness of metal film deposited on Be window to extract the maximum dose were $2.6{\mu}m$ and $2.7{\mu}m$ in case of W-target tube and Rh-target tube, respectively. When it was continuously worked during 30 min. at 40 kV in tube voltage and at $60{\mu}A$ in tube current, the temperature at target did not exceed $50^{\circ}C$. Our results reveals that the 40 kV x-ray transmission anode tube can be applied to the hand-held XRF apparatus.

• Journal of Radiation Protection and Research
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• v.24 no.4
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• pp.195-203
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• 1999

It is difficult to determine dosimetric characteristics for small field photon beams since such small fields do not achieve complete lateral electronic equilibrium and have steep dose gradients. Dosimetric characteristics of small field 4, 6, and 10 MeV photon beams have been measured in water with a diamond detector and compared to measurements using small volume cylindrical and plane parallel ionization chambers. Percent depth dose (PDD) and beam profiles for 6 and 10 MeV photon beams were measured with diamond detector and cylindrical ion chamber for small fields ranging from $1{\times}1\;to\;4{\times}4cm^2$. Total scatter factors($S_{c,p}$) for 4, 6, and 10 MeV photon beams were measured with diamond detector, cylindrical and plane parallel ion chambers for small fields ranging from $1{\times}1\;to\;4{\times}4cm^2$. The $S_{c,p}$ factors obtained with three detectors for 4, 6, and 10 MeV photon beams agreed well ($\pm1.2%$) for field sizes greater than $2{\times}2,\;2.5{\times}2.5,\;and\;3{\times}3\;cm^2$, respectively. For smaller field sizes, the cylindrical and plane parallel ionization chambers measure a smaller $S_{c,p}$ factor, as a result of the steep dose gradients across their sensitive volumes. The PDD values obtained with diamond detector and cylindrical ionization chamber for 6 and 10MeV photon beams agreed well ($\pm1.5%$) for field sizes greater than $4{\times}4\;cm^2$. For smaller field sizes, diamond detector produced a depth-dose curve which had a significantly shallower falloff than that obtained from the measurements of relative depth-dose with a cylindrical ionization chamber. For the measurements of beam profiles, a distortion in terms of broadened penumbra was observed with a cylindrical ionization chamber since diamond detector exhibited higher spatial resolution. The diamond detector with small sensitive volume, near water equivalent, and high spatial resolution is suitable detector compared to ionization chambers for the measurements of small field photon beams.

• Korean Journal of Mathematics
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• v.15 no.1
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• pp.51-57
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• 2007

We prove the existence of a positive solution for the system of the following nonlinear biharmonic equations with Dirichlet boundary condition $$\{{\Delta}^2u+c{\Delta}u+av^+=s_1{\phi}_1+{\epsilon}_1h_1(x)\;in\;{\Omega},\\{\Delta}^2v+c{\Delta}v+bu^+=s_2{\phi}_1+{\epsilon}_2h_2(x)\;in\;{\Omega},$$ where $u^+= max\{u,0\}$, $c{\in}R$, $s{\in}R$, ${\Delta}^2$ denotes the biharmonic operator and ${\phi}_1$ is the positive eigenfunction of the eigenvalue problem $-{\Delta}$ with Dirichlet boundary condition. Here ${\epsilon}_1$, ${\epsilon}_2$ are small numbers and $h_1(x)$, $h_2(x)$ are bounded.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.7
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• pp.713-719
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• 2016

The NOx conversion properties of Mn-Cu-$TiO_2$ and $V_2O_5$/$TiO_2$ catalysts were studied for the selective catalytic reduction (SCR) of NOx with ammonia. The performance of the catalysts was investigated in terms of their $NOx$ conversion activity as a function of the reaction temperature and space velocity. The activity of the Mn-Cu-$TiO_2$ catalyst decreased with increasing reaction temperature and space velocity. However, the activity of the $V_2O_5$/$TiO_2$ catalyst increased with increasing reaction temperature. High activity of the Mn-Cu-$TiO_2$ catalyst was observed at temperatures below $200^{\circ}C$. H2-TPR and XPS analyses were conducted to explain these results. It was found that the activity of the Mn-Cu-$TiO_2$ catalyst was influenced by the thermal shock caused by the change of the initial reaction temperature, whereas the $V_2O_5$/$TiO_2$ catalyst was not affected by the initial reaction temperature. In the case of catalyst C, the $NO_x$ conversion efficiency decreased with increasing space velocity. The decrease in the $NO_x$ conversion efficiency with increasing space velocity was much less for catalyst D than for catalyst C.

• Journal of Convergence for Information Technology
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• v.7 no.6
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• pp.97-102
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• 2017

In this paper, we have interested in cooperative intelligent transport system and autonomous driving system, and focused on analysis of the characteristics of Cooperative Awareness Message (CAM) and Decentralized Environmental Notification Basis Service (DENM) message, which is key delivery message among cooperative intelligent transport system (C-ITS) characteristics for research objectivity. For research method, we also described V2X communication, and also analyzed the security certificate and header structure of CAM and DENM messages. We described CAM message, which is a message informing the position and status of the vehicle. And the DENM message is presented a message informing an event such as a vehicle accident, and analysis security communication, which is supported services. According to standard analysis result, 186 bits or 275 bits are used. In addition to the security header and the certificate format used for vehicle communication, we have gained the certificate verification procedure for vehicles and PKI characteristics for vehicles. Also We derived the characteristics and transmission capability of the security synchronization pattern required for V2X secure communication. Therefore when it is considered for communication service of DENM and CAM in the C-ITS environment, this paper may be meaningful result.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.163-166
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• 2001

The stochiometric mix of evaporating materials for the ZnGa$_2$Se$_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, ZnGa$_2$Se$_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 61$0^{\circ}C$ and 45$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnGa$_2$Se$_4$ single crystal thin films measured from Hall effect by van der Pauw method are 9.63x10$^{17}$ cm$^{-3}$ , 296 $\textrm{cm}^2$/V.s at 293 K, respectively, From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the ZnGa$_2$Se$_4$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$So and the crystal field splitting $\Delta$Cr were 251.9 MeV and 183.2 meV at 10 K, respectively. From the photoluminescence measurement on ZnGa$_2$Se$_4$ single crystal thin film, we observed free excition (E$_{x}$) existing only high quality crystal and neutral bound excition (A$^{0}$ ,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral acceptor bound excition were 11 meV and 24.4 meV, respectivity. By Haynes rule, an activation energy of impurity was 122 meV.on energy of impurity was 122 meV.

• Journal of the Korean Chemical Society
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• v.33 no.4
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• pp.371-378
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• 1989

Kinetics of the substitution reaction of [pt[dien]X]$^+$(X = $Cl^-$, $Br^-$, $I^-$) with NO2- in aqueous solution were investigated by a spectrophotometric method at $20-35^{\circ}C$ and 1-1500 bars. The rates of these reactions were increased with raising temperature and pressure. The relative reactivities of replaceable ligands in [pt[dien]X]$^+$ follow the order ($Cl^-$ > $Br^-$ > $I^-$). Activation volumes (${\mid}{\Delta}V^{\neq}{\mid}$) were large negative values and decreased with raising temperature. First ($k_1$) and second($k_2$) order rate constants of these reactions were determined at $25^{\circ}C$ and both $k_1$ and $k_2$ were increased with raising pressure and activation volumes (${\Delta}{V_1}^{\neq}$, ${\Delta}{V_2}^{\neq}$) for the $k_1$ and $k_2$ path were large negative values respectively. The $k_1$ and $k_2$ of these reactions were determined at 1 bar and these values were increased with raising temperature. Activation parameters of $k_1$ and $k_2$ path were determined, therefore it can be inferred frp, these results that the substitution reactions of [pt[dien]X]$^+$ with ${NO_2}^-$ proceed through on associative (A) mechanism independent of a leaving groups and reaction paths.

• Bulletin of the Korean Mathematical Society
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• v.39 no.2
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• pp.269-276
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• 2002

Let E be a real Banach space. Let T : E longrightarrow E be a map with F(T) : = { x $\in$ E : Tx = x} $\neq$ 0 and satisfying the accretive-type condition $\lambda\$\mid$x-Tx\$\mid$^2$, for all $x\inE,\;x^*\inf(T)\;and\;\lambda >0$. We prove some necessary and sufficient conditions for the convergence of the Mann iterative sequence to a fixed point of T.

• Journal of Sensor Science and Technology
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• v.10 no.6
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• pp.328-337
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• 2001

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3}$, $345\;cm^2/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_2$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on $CdGa_2Se_4$ single crystal thin film, we observed free excition ($E_x$) existing only high quality crystal and neutral bound exiciton ($D^{\circ}$, X) having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV.